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Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction Available
TJ = 150 °C
TJ = 125 °C
100
2.0 TJ = 100 °C 1000
2nd line
10
1st line
2nd line
TJ = 25 °C
1
1.0 100
0.1
TJ = -40 °C
0.01
0 0.001 10
80 90 100 110 120 130 140 150 0 20 40 60 80 100
Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics
150 200
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
at TL = 110 °C at 5 A, 50 A/µs
Reverse Recovery Time nC/ns
125
Recovered Stored Charge/
160
100
120 at 2 A, 20 A/µs
75 at 5 A, 50 A/µs
80 at 2 A, 20 A/µs
50 at 1 A, 100 A/µs
40 at 1 A, 100 A/µs
25
trr
Qrr
0 0
1 10 100 25 50 75 100 125 150 175
Number of Cycles at 60 Hz Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Reverse Switching Characteristics
Axis Title
100 10000 100
TJ = 25 °C
Instantaneous Forward Current (A)
10
TJ = 125 °C
1000
2nd line
1st line
2nd line
TJ = 100 °C
1 10
TJ = 25 °C
100
0.1
TJ = -40 °C
0.01 10 1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)
3.0
D = 0.8
D = 0.5
2.5 D = 0.3
1.5
1.0 T
0.5
D = tp/T tp
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Forward Current (A)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.280 (7.11)
0.260 (6.60) 0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152) 0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
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