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ES3F, ES3G

www.vishay.com
Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction Available

• Ideal for automated placement


• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
SMC (DO-214AB) • Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Cathode Anode • AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
LINKS TO ADDITIONAL RESOURCES
please see www.vishay.com/doc?99912
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
PRIMARY CHARACTERISTICS consumer, computer, and telecommunication.
IF(AV) 3.0 A
VRRM 300 V, 400 V MECHANICAL DATA
IFSM 100 A Case: SMC (DO-214AB)
trr 35 ns Molding compound meets UL 94 V-0 flammability rating
VF at IF 1.1 V Base P/N-E3 - RoHS-compliant, commercial grade 
TJ max. 150 °C Base P/N-M3 - haloge-free, RoHS-compliant, and
Package SMC (DO-214AB) commercial grade 
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
Circuit configuration Single
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified 
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meet JESD 201 class 2
whisker test
Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)


PARAMETER SYMBOL ES3F ES3G UNIT
Device marking code EF EG
Maximum repetitive peak reverse voltage VRRM 300 400 V
Working peak reverse voltage VRWM 225 300 V
Maximum RMS voltage VRMS 210 280 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 100 A
superimposed on rated load
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

Revision: 05-Aug-2020 1 Document Number: 88590


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3F, ES3G
www.vishay.com
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)


PARAMETER TEST CONDITIONS SYMBOL ES3F ES3G UNIT
Maximum instantaneous forward voltage 3.0 A VF (1) 1.1 V
Maximum DC reverse current at working TA = 25 °C 10
IR µA
peak reverse voltage TA = 100 °C 350
IF = 0.5 A, IR = 1.0 A,
Maximum reverse recovery time trr 35 ns
Irr = 0.25 A
IF = 1.0 A, dI/dt = 100 A/μs,
Maximum reverse recovery time trr 50 ns
VR = 30 V, Irr = 0.1 IRM
IF = 1.0 A, dI/dt = 100 A/μs,
Maximum reverse recovery current IRM 3.0 A
VR = 30 V, Irr = 0.1 IRM
IF = 1.0 A, dI/dt = 100 A/μs,
Maximum stored charge Qrr 50 nC
VR = 30 V, Irr = 0.1 IRM
Typical junction capacitance 4.0 V, 1 MHz CJ 30 pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)


PARAMETER SYMBOL ES3F ES3G UNIT
RJA (1) 50
Typical thermal resistance °C/W
RJL (1) 15
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas

ORDERING INFORMATION (Example)


PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES3G-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
ES3G-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
ES3GHE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel
ES3GHE3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel
ES3G-M3/57T 0.211 57T 850 7" diameter plastic tape and reel
ES3G-M3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
ES3GHM3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel
ES3GHM3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified

Revision: 05-Aug-2020 2 Document Number: 88590


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3F, ES3G
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
10 000 10000
3.0
Resistive or Inductive Load
Average Forward Rectified Current (A)

TJ = 150 °C

Instantaneous Reverse Current (µA)


1000

TJ = 125 °C
100
2.0 TJ = 100 °C 1000

2nd line
10

1st line
2nd line
TJ = 25 °C
1

1.0 100
0.1

TJ = -40 °C
0.01

0 0.001 10
80 90 100 110 120 130 140 150 0 20 40 60 80 100
Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics

150 200
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)

at TL = 110 °C at 5 A, 50 A/µs
Reverse Recovery Time nC/ns

125
Recovered Stored Charge/

160

100
120 at 2 A, 20 A/µs
75 at 5 A, 50 A/µs
80 at 2 A, 20 A/µs
50 at 1 A, 100 A/µs

40 at 1 A, 100 A/µs
25
trr
Qrr
0 0
1 10 100 25 50 75 100 125 150 175
Number of Cycles at 60 Hz Junction Temperature (°C)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Reverse Switching Characteristics

Axis Title
100 10000 100
TJ = 25 °C
Instantaneous Forward Current (A)

TJ = 150 °C f = 1.0 MHz


Vsig = 50 mVp-p
Junction Capacitance (pF)

10
TJ = 125 °C
1000
2nd line
1st line
2nd line

TJ = 100 °C
1 10

TJ = 25 °C
100
0.1
TJ = -40 °C

0.01 10 1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance

Revision: 05-Aug-2020 3 Document Number: 88590


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3F, ES3G
www.vishay.com
Vishay General Semiconductor

3.0
D = 0.8
D = 0.5
2.5 D = 0.3

Average Power Loss (W)


D = 0.2
D = 1.0
2.0
D = 0.1

1.5

1.0 T

0.5
D = tp/T tp

0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Forward Current (A)

Fig. 7 - Forward Power Loss Characteristics

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMC (DO-214AB)
Cathode Band
Mounting Pad Layout

0.185 (4.69) MAX.


0.126 (3.20) 0.246 (6.22)
0.114 (2.90) 0.220 (5.59)
0.126 (3.20) MIN.

0.280 (7.11)
0.260 (6.60) 0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152) 0.320 (8.13) REF.

0.103 (2.62)
0.079 (2.06)

0.060 (1.52) 0.008 (0.2)


0.030 (0.76) 0 (0)
0.320 (8.13)
0.305 (7.75)

Revision: 05-Aug-2020 4 Document Number: 88590


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jul-2024 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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