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Dual Operational Amplifiers Hwd4558

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Chengdu Sino Microelectronics System Co.,Ltd.

Data Sheet
DUAL OPERATIONAL AMPLIFIERS HWD4558
General Description Features

The HWD4558 consists of two high performance opera- · Internal frequency compensation
tional amplifiers. The IC features high gain, high input · Large DC voltage gain with 100 dB typical
resistance, excellent channel separation, wide range of · High input resistance with 5MΩ typical
operating voltage and internal frequency compensa-
· Low input noise voltage with 10nV/ HZ
tion. It is specifically suitable for applications in differ-
ential-in, differential-out as well as in potential-metric · Maximum power supply voltages: ± 18V
amplifiers and where gain and phase matched channels · Compatible with NJM 4558
are mandatory. The HWD4558 contains ± 18Vmaximum
power supply voltage. Applications
The HWD558 is available in DIP-8 or SOIC-8 package. · Audio AC-3 decoded system
· Audio amplifier

Pin Configuration
SOIC-8/DIP-8

OUTPUT 1 1 8 VCC
INPUT 1- 2 7 OUTPUT 2
INPUT 1+ 3 6 INPUT 2-

SOIC-8 DIP-8 VEE 4 5 INPUT 2+

Top View

Figure 1. Package Types of HWD4558 Figure 2. Pin Configuration of HWD4558

Functional Block Diagram


3.1 KΩ
V CC

- Input
150 Ω

+ Input 25 Ω

Output

25 Ω

10pF

87pF
7.1 KΩ 7.1 4.2 KΩ
KΩ 480 Ω

36 KΩ

V EE

Figure 3. Representative Schematic Diagram of HWD4558 (Each amplifier)

Issue Date: Jan. 2003 Rev.1.0


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Chengdu Sino Microelectronics System Co.,Ltd. Data Sheet
DUAL OPERATIONAL AMPLIFIERS HWD4558
Ordering Information

Package Temperature Range Part Number Marking ID Packing Type


SOIC-8 HWD4558M 4558M Tube, Reel
-40 to 85oC
DIP-8 HWD4558P HWD4558P Tube

Absolute Maximum Ratings

Parameter Symbol Value Unit


VCC + 18
Power Supply Voltage V
VEE - 18
Differential Input Voltage VID ± 30 V
Input Voltage VIC ± 15 V
DIP 500
Power Dissipation PD mW
SOIC 800
Operating Temperature Range TOP -40 to 85 o
C
Storage Temperature Range TSTG -40 to 125 o
C

Note: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operation Ratings" is not implied. Exposure to "Absolute Maximum Rat-
ings" for extended periods may affect device reliability.

Recommended Operation Ratings

Parameter Min. Max. Unit

Supply Voltage ±4 ± 18 V

Issue Date: Jan. 2003 Rev.1.0


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Chengdu Sino Microelectronics System Co.,Ltd. Data Sheet
DUAL OPERATIONAL AMPLIFIERS HWD4558
Electrical Characteristics
Operating Conditions: VCC = +15V, VEE = - 15V, TA= 25oC unless otherwise specified.

Parameter Conditions Min. Typ. Max. Unit


Input Offset Voltage - 0.5 6 mV
Input Bias Current VCM = 0V - 25 250 nA
Input Offset Current VCM = 0V - 2.5 100 nA
Input Resistance 0.3 5 - MΩ
RL = ∞, Over full temperature
Supply Current - 3.3 5.7 mA
range
Large Signal Voltage Gain RL ≥2Κ, VO = 1V to 11V 85 100 - dB
Common Mode Rejection Ratio VCM = 0V to VCC - 15V 80 92 - dB
VCC=5V to 18V
Power Supply Rejection Ratio 80 95 - dB
VEE =− 5V to - 18V
Source V+ = 1V, V- = 0V - 50 - mA
Output Current
Sink V+ = 0V, V- = 1V - 50 - mA
RL≥2KΩ ±10 ±13 -
Output Voltage Swing V
RL≥10KΩ ±12 ±14 -
Slew Rate - 1.3 - V / µS
Equivalent Input Noise Voltage Rs=50Ω, f=1KHz - 10 - nV/(HZ)0.5
Gain Bandwidth Product - 3.4 - MHz

Issue Date: Jan. 2003 Rev.1.0


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Chengdu Sino Microelectronics System Co.,Ltd. Data Sheet
DUAL OPERATIONAL AMPLIFIERS HWD4558
Typical Characteristics

120 30

100 VCC=15V, VEE=-15V


Open Loop Voltage Gain (dB)

25
o
RL=2K,TA=25 C

Output Voltage Swing (V)


VCC=15V,VEE=-15V,
80 20 o
RL=2K, TA=25 C

60 15

40 10

20 5

0 0
0 1 2 3 4 5 6 1 2 3 4 5 6
2x10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ 10 HZ
Frequency (HZ) Frequency (HZ)

Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency

3
30 10
Equivllent Input Noise Voltage (nV/(HZ) )
0.5

o
28 VCC=15V,VEE=-15V,TA=25 C
26 VCC=15V, VEE=-15V
Output Voltage Swing (V)

o
RS=50Ω,TA=25 C
24 2
10

22

20

18 1
10
16

14

12
0
10
0 1 2 3
0.1K 1K 10K 10 HZ 10 HZ 10 HZ 10 HZ
Load Resistance (kΩ) Frequency (HZ)

Figure 6. Maximum Output Voltage Swing Figure 7. Equivalent Input Noise Voltage vs. Frequency
vs. Load Resistance

Issue Date: Jan. 2003 Rev.1.0


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Chengdu Sino Microelectronics System Co.,Ltd. Data Sheet
DUAL OPERATIONAL AMPLIFIERS HWD4558
Typical Characteristics (Continued)

80
1.2
70
1.1
VCC=15V V CC=15V
1.0 VEE=-15V 60 V EE=-15V
Offset Voltage (mV)

0.9

Bias Current (nA)


50
0.8
40
0.7

0.6 30

0.5
20
0.4
10
0.3

0.2 0
-25 0 25 50 75 100 125 -25 0 25 50 75 100 125
o o
Ambient Temperature ( C) Ambient Temperature ( C)

Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature

Typical Application

R5 20K C1 10 µF

R2 20K R3 10K R4 20K

D1
R1 20K 1S1588
VIN
HWD4558 VO=VIN
HWD4558
D2
1S1588
R6 15K
R7 6.2K

Figure 10. Typical Application of HWD4558

Issue Date: Jan. 2003 Rev.1.0


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Chengdu Sino Microelectronics System Co.,Ltd. Data Sheet
DUAL OPERATIONAL AMPLIFIERS HWD4558
Mechanical Dimensions

DIP - 8

9.2±0.10 7.62±0.25

6° 6°

0.7
1.46±0.31

3.30±0.30

φ3×0.15±0.05

0.254
2.54 0.28±0.07
0.457
10.0MAX

0.13MIN
6.60±0.50

R0.75

Issue Date: Jan.


. n 2003 Rev.1.0
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Chengdu Sino Microelectronics System Co.,Ltd. Data Sheet
DUAL OPERATIONAL AMPLIFIERS HWD4558
Mechanical Dimensions (Continued)

SOIC - 8

0.32

1.55±0.20

0.22±0.03
4.9±0.10

0.70±0.025

0.2±0.10

7° D
6.00±0.20

D
20:1

0.20
φ0.8


±4°
1.00
3.90±0.10
0.90

R0.15

R0.15

±2°
0.42±0.09

Issue Date: Jan. 2003 Rev.1.0


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Chengdu Sino Microelectronics System Co.,Ltd

(Http://www.csmsc.com)

Headquarters of CSMSC Beijing Office:


Address: 2nd floor, Building D, Address: Room 505, No. 6 Building,
Science & Technology Zijin Garden, 68 Wanquanhe
Industrial Park, 11 Gaopeng Rd., Haidian District,
Avenue, Chengdu High-Tech Beijing, P.R.China
Zone,Chengdu City, Sichuan PC: 100000
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Shenzhen Office: Shanghai Office:


Address: Room 1110-1112, Building Address: Room B-906, High-Tech
A, Zhongshen Garden, King World, Beijing East
Caitian Rd., Futian District, Rd. , Shanghai, P.R.China
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