4N35, 4N36, 4N37

OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS

D Gallium-Arsenide-Diode Infrared Source DCJ† OR 6-TERMINAL DUAL-IN-LINE PACKAGE
Optically Coupled to a Silicon npn (TOP VIEW)
Phototransistor
ANODE 1 6 BASE
D High Direct-Current Transfer Ratio CATHODE 2 5 COLLECTOR
D High-Voltage Electrical Isolation NC 3 4 EMITTER
1.5-kV, 2.5-kV, or 3.55-kV Rating
D High-Speed Switching †4N35 only
tr = 7 µs, tf = 7 µs Typical NC – No internal connection
schematic
D Typical Applications Include Remote
Terminal Isolation, SCR and Triac Triggers, ANODE BASE
Mechanical Relays and Pulse Transformers COLLECTOR
D Safety Regulatory Approval CATHODE
UL/CUL, File No. E65085 NC EMITTER

absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†

Input-to-output peak voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 kV
4N36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV
4N37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV
4N36 . . . . . . . . . . . . . . . . . . . . . . . . 1.75 kV
4N37 . . . . . . . . . . . . . . . . . . . . . . . . 1.05 kV
Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V
Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input-diode forward current: Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA
Peak (1 µs, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Phototransistor continuous collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Continuous total power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Continuous power dissipation at (or below) 25°C lead temperature:
Infrared-emitting diode (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototransistor (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Operating temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 100°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
NOTES: 1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead
0.8 mm (1/32 inch) from the case.
5. Derate linearly to 100°C lead temperature at the rate of 6.7 mW/°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Copyright  1998, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

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4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

electrical characteristics at 25°C free-air temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0, IF = 0 70† V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA, IB = 0, IF = 0 30† V
V(BR)EBO Emitter-base breakdown voltage IE = 100 µA, IC = 0, IF = 0 7† V
IR Input diode static reverse current VR = 6 V 10† µA
IIO Input-to-output current VIO = rated peak value, t = 8 ms 100 mA
VCE = 10 V, IF = 10 mA, IB = 0 10†
VCE = 10 V, IF = 10 mA, IB = 0,
4†
IC(on)
( ) On-state collector current TA = – 55°C mA
VCE = 10 V, IF = 10 mA, IB = 0,
4†
TA = 100°C
VCE = 10 V, IF = 0 IB = 0 1 50 nA
IC(off) Off-state collector current VCE = 30 V, IF = 0, IB = 0,
500† µA
TA = 100°C
hFE Transistor static forward current transfer ratio VCE = 5 V, IC = 10 mA, IF = 0 500
IF = 10 mA 0.8† 1.5†
VF Input diode static forward voltage IF = 10 mA, TA = – 55°C 0.9† 1.7† V
IF = 10 mA, TA = 100°C 0.7† 1.4†
VCE(sat) Collector-emitter saturation voltage IC = 0.5 mA, IF = 10 mA, IB = 0 mA 0.3† V
rIO Input-to-output internal resistance VIO = 500 V, See Note 6 1011† Ω
Cio Input-to-output capacitance VIO = 0, f = 1 MHz, See Note 6 1 2.5† pF
† JEDEC registered data
NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.

switching characteristics at 25°C free-air temperature†

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Time-on time VCC = 10 V, IC(on) = 2 mA, 7 10
µs
toff Turn-off time RL = 100 Ω, See Figure 1 7 10
† JEDEC registered data

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 4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

PARAMETER MEASUREMENT INFORMATION

47 Ω Input
Input
0V
Output
(see Note B) ton toff
Output
+ 90%
RL = 100 Ω
VCC = 10 V 10%
–

TEST CIRCUIT VOLTAGE WAVEFORMS

NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZO = 50 Ω, tr ≤ 15 ns, duty cycle 1%, 
tw = 100 µs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ≤ 12 ns, Rin ≥ 1 MΩ, Cin ≤ 20 pF.

Figure 1. Switching Times

TYPICAL CHARACTERISTICS

TRANSISTOR STATIC FORWARD

OFF-STATE COLLECTOR CURRENT CURRENT TRANSFER RATIO (NORMALIZED)
vs vs
Transistor Static Forward Current Transfer Ratio (Normalized)

FREE-AIR TEMPERATURE ON-STATE COLLECTOR CURRENT

10,000 1.6
VCE = 10 V VCE = 5 V
4,000
I C(off) – Off-State Collector Current – nA

IB = 0 IF = 0
1.4
IF = 0 TA = 25°C
1,000
1.2
400

1
100

40 0.8

10
0.6
4
0.4
1

0.4 0.2 Normalized to 1 V

at IC = 1 mA
0.1 0
0 10 20 30 40 50 60 70 80 90 100 0.1 0.2 0.4 1 2 4 10 20 40 100
TA – Free-Air Temperature – °C IC(on) – On-State Collector Current – mA

Figure 2 Figure 3

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4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

TYPICAL CHARACTERISTICS

COLLECTOR CURRENT
vs INPUT-DIODE FORWARD
MODULATION FREQUENCY CONDUCTION CHARACTERISTICS
10 160
VCC = 10 V
4 IB = 0 140
TA = 25°C TA = 25°C
RL = 100 Ω
I C – Collector Current – mA

I F – Forward Current – mA
120
1
100
RL = 1 Ω
0.4
TA = 70°C
80
0.2
60
0.1
RL = 475 Ω
40
0.04

0.02 20
TA = 25°C
0.01 0
1 4 10 40 100 400 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
fmod – Modulation Frequency – kHz VF – Forward Voltage – V

Figure 4 Figure 5

COLLECTOR CURRENT COLLECTOR CURRENT

vs vs
INPUT-DIODE FORWARD CURRENT COLLECTOR-EMITTER VOLTAGE
100 60
VCE = 10 V IB = 0
40 IB = 0 TA = 25°C
TA = 25°C 50 See Note A
I C – Collector Current – mA
I C – Collector Current – mA

10
40
4 Max Continuous
Power Dissipation
1 30 IF = 20 mA

0.4
20 IF = 15 mA

0.1 IF = 10 mA
10
0.04 IF = 5 mA

0.01 0
0.1 0.4 1 4 10 40 100 0 2 4 6 8 10 12 14 16 18 20
IF – Input-Diode Forward Current – mA VCE – Collector-Emitter Voltage – V
NOTE A. Pulse operation of input diode is required for operation
beyond limits shown by dotted lines.

Figure 6 Figure 7

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 4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

TYPICAL CHARACTERISTICS
ON-STATE COLLECTOR CURRENT
(RELATIVE TO VALUE AT 25°C)
vs
FREE-AIR TEMPERATURE
1.6
VCE = 10 V
1.4 IB = 0
IF = 10 mA

(Relative to Value at TA = 25 °C)

See Note A
On-State Collector Current 1.2

0.8

0.6

0.4

0.2

0
– 75 – 50 – 25 0 25 50 75 100 125
TA – Free-Air Temperature – °C
NOTE A. These parameters were measured using pulse
techniques, tw = 1 ms, duty cycle ≤ 2 %.

Figure 8

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4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

APPLICATION INFORMATION

The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each
device is available in a 6-terminal plastic dual-in-line package, shown in Figure 9, or in a DCJ plastic dual
surface-mount optocoupler package (see Mechanical Data).

0.370 (9,40)
0.330 (8,38)
6 5 4

Index Dot
(see Note B)

1 2 3
(see Note C)
C
L C
L 0.300 (7,62) T.P.
0.215 (5,46)
0.115 (2,92) (see Note A)
0.070 (1,78)
0.260 (6,61)
0.020 (0,51) 0.070 (1,78) MAX 0.240 (6,09)
6 Places

Seating Plane

0.040 (1,01) MIN 105°

90°
0.090 (2,29) 0.021 (0,534)
0.050 (1,27) 0.012 (0,305)
0.015 (0,381) 0.150 (3,81)
4 Places 0.008 (0,203)
6 Places 0.125 (3,17)
0.100 (2,54) T.P.
(see Note A)

NOTES: A. Terminals are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed.
B. Terminal 1 identified by index dot.
C. The dimensions given fall within JEDEC MO-001 AM dimensions.
D. All linear dimensions are in inches (millimeters).

Figure 9. Plastic Dual-in-Line Package

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 4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

MECHANICAL DATA
DCJ (R-PDSO-G6) PLASTIC DUAL SMALL-OUTLINE OPTOCOUPLER

0.090 (2,29)
0.100 (2,54)
0.050 (1,27)
0.070 (1,78)
0.045 (1,14)
6 4

0.405 (10,29)
0.385 (9,78)
0.008 (0,20) NOM
0.260 (6,60)
0.240 (6,10)

1 3 Gage Plane

0.370 (9,40)
0.330 (8,38)

0°– 5° 0.010 (0,25)

0.030 (0,76) MIN

0.150 (3,81) MAX

Seating Plane

0.020 (0,51) MAX 0.004 (0,10)

4073328/A 10/96

NOTES: A. All linear dimensions are in inches (millimeters)

B. This drawing is subject to change without notice.
C. Terminal 1 identified by index dot.

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Copyright  1998, Texas Instruments Incorporated