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Assignment 3 Microelectronics Devices To Circuits

This document contains a 10 question quiz on BJT and MOSFET devices. It covers operating regions of BJT inverters, calculating noise margins for BJT inverters, effects of temperature on carrier mobility, threshold voltage conditions for MOSFET inversion, and techniques to reduce body effect in p-channel MOSFETs. Short explanations are provided for each question.

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A21126512117 SUKALA ABHIRAM
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11 views

Assignment 3 Microelectronics Devices To Circuits

This document contains a 10 question quiz on BJT and MOSFET devices. It covers operating regions of BJT inverters, calculating noise margins for BJT inverters, effects of temperature on carrier mobility, threshold voltage conditions for MOSFET inversion, and techniques to reduce body effect in p-channel MOSFETs. Short explanations are provided for each question.

Uploaded by

A21126512117 SUKALA ABHIRAM
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Week 3: Assignment 3

Q1: Figure below shows the VTC of a BJT inverter. Identify the operating regions of the BJT in
section A, B and C.

Figure 1

a. A = Cutoff; B = Forward Active; C = Saturation


b. A = Forward Active; B = Saturation; C = Cutoff
c. A = Saturation; B = Cutoff; C = Forward Active
d. A = Cutoff; B = Reverse Active; C = Saturation
Ans: (a) A = Cutoff; B = Forward Active; C = Saturation
Q2. Calculate NMH and NML for the inverter shown in figure below. Consider VBE = 0.68 V, RC = 2
KΩ, RB = 15KΩ, VCE, (Sat) = 0.3V, β = 75, VCC = 5V

a. NMH = 5V; NML = 0.3V


b. NMH = 0.68V; NML = 0.3V
c. NMH = 3.855V; NML = 0.38V
d. NMH = 3.5V; NML = 0.5V
Ans: (c) NMH = 3.855V; NML = 0.38V
Q3: Considering base width modulation in a BJT, the decrease in base width cause β to ____ hence
the collector current (IC) ____ with collector voltage.
a. Increase; Increase
b. Increase; Decrease
c. Decrease; Increase
d. Decrease; Decrease
Ans: (a) Increase; Increase
Q4: In an BJT, ____ value of IC may ____ the risk of thermal runaway.
a. Small; Increase
b. Small; Decrease
c. Large; Increase
d. Large; Decrease
Ans: (c) Large; Increase
Q5: Carrier mobility ____ with _____ in temperature
a. Increase; Increase
b. Increase; Decrease
c. Decrease; Increase
d. Decrease; Decrease
Ans: (c) Decrease; Increase
Q6: In an n-channel enhancement MOSFET, onset of inversion takes place at
a. VGS = VTH
b. VGS > VTH
c. VGS < VTH
d. Doesn’t depend on VTH.
Ans: (a) VGS = VTH
Q7: The conventional limit for sub-threshold slope for MOSFET at 300 K is _____.
a. 40 mV/decade
b. 60 mV/decade
c. 80 mV/decade
d. 100 mV/decade
Ans: (b) 60 mV/decade
Q8: Consider a N-MOSFET as shown in figure below. What will be the change in ID if VDD changes
𝑊
from 3.3 to 1.8V. Consider VTH = 0.5V and 𝜇𝑁 𝐶𝑂𝑋 𝐿
= 100 µ𝐴/𝑉 2

a. 4 µA
b. 3 µA
c. 2 µA
d. 1 µA
Ans: (c) 2 µA
Q9: In ______ region, a MOSFET works as a resistor, while in ______ region it works as a current
source.
a. Saturation; Linear
b. Cut off; Linear
c. Cut off, Saturation
d. Linear; Saturation
Ans: (d) Linear; Saturation
Q 10: In order to have zero substrate bias effect, The substrate of an p-channel enhancement mode
MOSFET should be _____.
a. Connected to the most positive bias.
b. Connected to the most negative bias.
c. Grounded
d. Floating
Ans: (a) Connected to the most positive bias.

Week 3: Assignment 3: Brief Explanation


Q1. Explanation:
As VIN < VBE(ON) device is in cut-off & IC=0, hence VOUT = VCC. As VIN increases from a low value to
a high value, the device switches on drastically. It moves to active region and the into saturation.
Q2. Explanation:
NMH = VOH −VIH; NML=VIL−VOL
At VIN = VIH; VOUT = VCE, (Sat)
IB = IC/β = (VCC − VCE(Sat)) / (RC × β) = (5 − 0.3)/(2000 × 75) = 0.031 mA
VIH = IBRB + VBE = 0.031 × 10−3 × 15000 + 0.68 = 1.145V
VOH = VCC = 5V
VIL = VBE = 0.68
NMH = VOH − VIH = 5 − 1.145 = 3.855 V
NML = VIL − VOL = 0.68 – 0.3 = 0.38 V
Q3. Explanation:
Considering base width modulation in a BJT, the decrease in base width cause β to increase hence the
collector current (IC) increase with collector voltage.
Q4. Explanation:
In an BJT, large value of IC may increase the risk of thermal runaway.
Q5. Explanation:
Carrier mobility decrease with increase in temperature.
Q6. Explanation:
In an n-channel enhancement MOSFET, onset of inversion takes place at VGS = VTH.
Q7. Explanation:
The conventional limit for sub-threshold slope for MOSFET is 60 mV/decade
Q8. Explanation:
Here VGS = 2.5 V
Overdrive voltage = VGS – VTH = 2.5 − 0.5 = 2V
Case 1: VDS = 3.3 V
VDS > VGS − VTH; Device is in saturation
1 𝑊 1
𝐼𝐷 = µ𝑁 𝐶𝑂𝑋 (𝑉𝐺𝑆 − 𝑉𝑇𝐻 )2 = × 100 × 10−6 × (2.5 − 0.5)2 = 200 µ𝐴
2 𝐿 2
Case 2: VDS = 1.8 V
VDS < VGS − VTH; Device is in linear region.
𝑊 1 2 1
𝐼𝐷 = µ𝑁 𝐶𝑂𝑋 ((𝑉𝐺𝑆 − 𝑉𝑇𝐻 )𝑉𝐷𝑆 − 𝑉𝐷𝑆 ) = 100 × 10−6 × ((2.5 − 0.5) × 1.8 − × 1.82 ) =
𝐿 2 2
= 198 µ𝐴
Change in current = 200 − 198 = 2µA
Q9. Explanation:
In linear region, a MOSFET works as a resistor, while in saturation region it works as a current
source.
Q10. Explanation:
The substrate of an p-channel enhancement mode MOSFET should be connected to the most positive
bias to reduce body effect and leakage.

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