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    Isc 2SC2750: Isc Silicon NPN Power Transistor

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    cesarcalderonredmi
    The document provides specifications for the ISC Silicon NPN Power Transistor 2SC2750. It lists key characteristics including high current capability up to 15A continuous and 30A peak, high power dissipation up to 100W, and high collector-emitter sustaining voltage up to 100V. The transistor is designed for high speed, high current switching in industrial applications. Absolute maximum ratings and detailed electrical characteristics are provided.

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    Isc 2SC2750: Isc Silicon NPN Power Transistor

    Uploaded by

    cesarcalderonredmi
    13 views2 pages
    The document provides specifications for the ISC Silicon NPN Power Transistor 2SC2750. It lists key characteristics including high current capability up to 15A continuous and 30A peak, high power dissipation up to 100W, and high collector-emitter sustaining voltage up to 100V. The transistor is designed for high speed, high current switching in industrial applications. Absolute maximum ratings and detailed electrical characteristics are provided.

    Original Description:

    Pines c2750

    Original Title

    c2750 (1)

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    The document provides specifications for the ISC Silicon NPN Power Transistor 2SC2750. It lists key characteristics including high current capability up to 15A continuous and 30A peak, high power dissipation up to 100W, and high collector-emitter sustaining voltage up to 100V. The transistor is designed for high speed, high current switching in industrial applications. Absolute maximum ratings and detailed electrical characteristics are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    13 views2 pages

    Isc 2SC2750: Isc Silicon NPN Power Transistor

    Uploaded by

    cesarcalderonredmi
    The document provides specifications for the ISC Silicon NPN Power Transistor 2SC2750. It lists key characteristics including high current capability up to 15A continuous and 30A peak, high power dissipation up to 100W, and high collector-emitter sustaining voltage up to 100V. The transistor is designed for high speed, high current switching in industrial applications. Absolute maximum ratings and detailed electrical characteristics are provided.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 2

    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC2750

    DESCRIPTION
    ·Collector-Emitter Sustaining Voltage-
    : VCEO(SUS)= 100V(Min)
    ·High Current Capability
    ·High Power Dissipation

    APPLICATIONS
    ·Designed for high speed, high current switching industrial
    applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 150 V

    VCEO Collector-Emitter Voltage 100 V

    VEBO Emitter-Base Voltage 7 V

    IC Collector Current-Continuous 15 A

    ICM Collector Current-Peak 30 A

    IB Base Current-Continuous 5 A

    Collector Power Dissipation


    PC 100 W
    @ TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc website：www.iscsemi.cn 1
    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC2750

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 1A; L= 100μH 100 V

    IC= 10A; IB1= -IB= 1A; Ta= 125℃


    VCEX(SUS)1 Collector-Emitter Sustaining Voltage 150 V
    L= 180μH; Clamped

    IC= 20A; IB1= 2A; IB2= 1A;


    VCEX(SUS)2 Collector-Emitter Sustaining Voltage 100 V
    Ta= 125℃; L= 180μH; Clamped

    VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.6 V

    VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V

    ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA

    ICER Collector Cutoff Current VCE= 100V; RBE= 50Ω; Ta= 125℃ 1.0 mA

    VCE= 100V;VBE(off)= -1.5V; 10


    ICEX Collector Cutoff Current μA
    VCE= 100V;VBE(off)= -1.5V;Ta=125℃ 500

    IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA

    hFE-1 DC Current Gain IC= 5A; VCE= 5V 30 120

    hFE-2 DC Current Gain IC= 10A; VCE= 5V 20

    Switching Times

    ton Turn-on Time 1.0 μs

    IC= 10A, IB1= -IB2= 1A,


    tstg Storage Time 1.5 μs
    VCC≈ 50V; RL= 5Ω

    tf Fall Time 0.3 μs

     hFE-1 Classifications

    M L K

    30-60 40-80 60-120

    isc website：www.iscsemi.cn 2

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