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    Irf 1010 Ns

    Uploaded by

    Sergio De J. Gómez
    This document provides information on the IRF1010NS N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a TO-263 packaging and is suitable for switching and power supply applications. The maximum ratings include a 55V drain-source voltage, 85A continuous drain current, and 180W total power dissipation. It also lists the electrical characteristics such as a 2-4V gate threshold voltage and 11mΩ maximum drain-source on-resistance. A notice states that ISC products are intended for general electronic equipment and not applications requiring specialized reliability.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Irf 1010 Ns

    Uploaded by

    Sergio De J. Gómez
    7 views2 pages
    This document provides information on the IRF1010NS N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a TO-263 packaging and is suitable for switching and power supply applications. The maximum ratings include a 55V drain-source voltage, 85A continuous drain current, and 180W total power dissipation. It also lists the electrical characteristics such as a 2-4V gate threshold voltage and 11mΩ maximum drain-source on-resistance. A notice states that ISC products are intended for general electronic equipment and not applications requiring specialized reliability.

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    This document provides information on the IRF1010NS N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a TO-263 packaging and is suitable for switching and power supply applications. The maximum ratings include a 55V drain-source voltage, 85A continuous drain current, and 180W total power dissipation. It also lists the electrical characteristics such as a 2-4V gate threshold voltage and 11mΩ maximum drain-source on-resistance. A notice states that ISC products are intended for general electronic equipment and not applications requiring specialized reliability.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    7 views2 pages

    Irf 1010 Ns

    Uploaded by

    Sergio De J. Gómez
    This document provides information on the IRF1010NS N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a TO-263 packaging and is suitable for switching and power supply applications. The maximum ratings include a 55V drain-source voltage, 85A continuous drain current, and 180W total power dissipation. It also lists the electrical characteristics such as a 2-4V gate threshold voltage and 11mΩ maximum drain-source on-resistance. A notice states that ISC products are intended for general electronic equipment and not applications requiring specialized reliability.

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    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRF1010NS

    ·FEATURES
    ·With TO-263( D2PAK ) packaging
    ·High speed switching
    ·Low gate input resistance
    ·Standard level gate drive
    ·Easy to use
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·APPLICATIONS
    ·Power supply
    ·Switching applications

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 55 V

    VGSS Gate-Source Voltage ±20 V

    Drain Current-Continuous;Tc=25℃ 85
    ID A
    Tc=100℃ 60

    IDM Drain Current-Single Pulsed 290 A

    PD Total Dissipation 180 W

    Tj Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -55~175 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth(ch-c) Channel-to-case thermal resistance 0.85 ℃/W

    Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRF1010NS

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 55 V

    VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 2.0 4.0 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID=43A 11 mΩ

    IGSS Gate-Source Leakage Current VGS=±20V;VDS= 0V ±0.1 μA

    VDS=55V; VGS= 0V;Tc=25℃ 25


    IDSS Drain-Source Leakage Current μA
    VDS=44V; VGS= 0V; Tc=150℃ 250

    VSDF Diode forward voltage ISD=43A, VGS = 0 V 1.3 V

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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