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    Isc N-Channel MOSFET Transistor 2SK3568: Features

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    Mekkati Mekkati
    This document summarizes the specifications of an N-channel MOSFET transistor from ISC. The transistor has a maximum drain-source on-resistance of 0.52 ohms and is intended for use in switching regulator applications. It has been 100% avalanche tested and is rated for a maximum drain-source voltage of 500V and continuous drain current of 12 amps. The transistor is not designed for use in specialized equipment like aerospace or medical due to reliability requirements.

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    Isc N-Channel MOSFET Transistor 2SK3568: Features

    Uploaded by

    Mekkati Mekkati
    14 views2 pages
    This document summarizes the specifications of an N-channel MOSFET transistor from ISC. The transistor has a maximum drain-source on-resistance of 0.52 ohms and is intended for use in switching regulator applications. It has been 100% avalanche tested and is rated for a maximum drain-source voltage of 500V and continuous drain current of 12 amps. The transistor is not designed for use in specialized equipment like aerospace or medical due to reliability requirements.

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    2sk3568

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    This document summarizes the specifications of an N-channel MOSFET transistor from ISC. The transistor has a maximum drain-source on-resistance of 0.52 ohms and is intended for use in switching regulator applications. It has been 100% avalanche tested and is rated for a maximum drain-source voltage of 500V and continuous drain current of 12 amps. The transistor is not designed for use in specialized equipment like aerospace or medical due to reliability requirements.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views2 pages

    Isc N-Channel MOSFET Transistor 2SK3568: Features

    Uploaded by

    Mekkati Mekkati
    This document summarizes the specifications of an N-channel MOSFET transistor from ISC. The transistor has a maximum drain-source on-resistance of 0.52 ohms and is intended for use in switching regulator applications. It has been 100% avalanche tested and is rated for a maximum drain-source voltage of 500V and continuous drain current of 12 amps. The transistor is not designed for use in specialized equipment like aerospace or medical due to reliability requirements.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc N-Channel MOSFET Transistor 2SK3568

    ·FEATURES
    · Drain-source on-resistance:
    RDS(on) ≤ 0.52Ω@10V
    ·Low leakage current:
    IDSS <100 µA @VDS = 500 V
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·APPLICATIONS
    ·Switching Regulator Applications

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 500 V

    VGS Gate-Source Voltage ±30 V

    ID Drain Current-Continuous 12 A

    IDM Drain Current-Single Pulsed 48 A

    PD Total Dissipation @TC=25℃ 40 W

    Tj Max. Operating Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth(ch-c) Channel-to-case thermal resistance 3.125 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    isc N-Channel MOSFET Transistor 2SK3568

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 500 V

    VGS(th) Gate Threshold Voltage VDS= 10V; ID= 1mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS=10V; ID=6A 0.52 Ω

    IGSS Gate-Source Leakage Current VGS= ±25V;VDS= 0V ±10 µA

    IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V 100 μA

    VSD Diode forward voltage IS=12A, VGS = 0 V 1.7 V

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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