Vlsi Topic2b

Physics of MOS Transistors
- Conceived in the 1930s but first realized in the 1960s

- type of device called the metal-oxide semiconductor field-effect transistor (MOSFET)
Structure of MOSFET
- (a) Structure of MOSFET, (b) side view, (c) circuit symbol (d) another basic MOS capacitor structure
- the device is symmetric with respect to Source and Drain
- with n-type source/drain and p-type substrate, this transistor operateswith electrons rather than holes and is therefore
called an n-type MOS (NMOS) device
- with p-type source/drain and n-type substrate, is therefore called a p-type MOS (PMOS) device
- the circuit symbol for an NMOS transistor (c), wherein the arrowsignifies the source terminals
- tox is the thickness of the oxide (in angstroms (Å) and εox is the oxide permittivity (usually
(3.9)(8.85 × 10−14) F/cm for silicon.
(d)
Gate -the top conductive plate resides on a thin dielectric (insulator) layer
-is deposited on the underlying p-type silicon “substrate”
- controls the current flow from the source to the drain
- draws nearly zero current because an insulating layer separates it from the substrate.
Source -heavily-doped n-type region
- can provide charge carriers
- attached to the substrate
Drain - heavily-doped n-type region
- can absorb charge carriers
- attached to the substrate
- the figure on the left is the schematic diagram of an n-channel

enhancement-mode MOSFET
Operation of MOSFET
- With zero bias applied to the gate, the source and drain terminals are separated by the p-region, as shown in Figure (a).
- The equivalent two back-to-back diodes in figure(b). The current in this case is essentially zero.
- If a large enough positive gate voltage is applied, an electron inversion layer is created at the oxide–semiconductor interface and
this layer “connects” the n-source to the n-drain. A current can then be generated between the source and drain terminals.
- VTH (Threshold voltage) the applied gate voltage needed to create an
inversion charge in which the density is equal to the concentration of
majority carriers in the semiconductor substrate.
- the gate voltage required to “turn on” the transistor.
- N-MOSFET with gate voltage, VG, and drain voltage, VD, VTH>0
- If VGS< VTH (Threshold voltage), the device is off, and ID= 0 regardless of
the value of VD.
- If VGS> VTH, then ID>0
Channel Charge Density

- the channel charge per unit length, also called the “charge density”
- Q unit is coulomb/meter
where: W = width of the transistor
Cox = gate capacitance per unit area,
Qtot =W C OX ( V GS −V TH ) L
Drain Current in Saturation for n-MOSFET

- the linear dependence of ID upon µn, Cox, and W/L is to be expected such that a higher mobility yields a greater current for a
given drain-source voltage; a higher gate oxide capacitance leads to a larger electron density in the channel for a given gate-
source voltage; and a larger W/L (called the device “aspect ratio”) is equivalent to placing more transistors in parallel.
ID =
- The term “on-resistance”, Ron, always refers to that between the source and
drain as
no resistance exists between the gate and other terminals
Drain Current For The Nonsaturation Or Triode Region
Drain Current in Saturation for p-MOSFET

- VT H<0 for the p-channel enhancement-mode device.
Drain Current For The Non saturation Or Triode Region

MOS Transconductance
gm gm
Channel-Length Modulation
- happens as an effect of the pinch-off.
- the point at which the channel vanishes infact moves toward the source
as the drain voltage increases. where λ is the “channel-length modulation coefficient
Large Signal Model

-at saturation region - at triode region -at deep triode region
Small signal model
Problem1:
Calculate the current in an n-channel MOSFET. Consider an n-channel enhancement-mode MOSFET with the following parameters:
VT H = 0.4 V, W = 20 μm, L = 0.8 μm, μn= 650 cm2/V–s, tox = 200 Å, and εox = (3.9)(8.85 × 10−14) F/cm. Determine the current when
the transistor is biased in the saturation region for (a) VGS= 0.8 V and (b) VGS= 1.6 V.
Problem2:
Problem3:
Given the circuits below, identify which region they are operating. Assuming VTH = 0.4V for NMOS and VTH = -0.4V PMOS.
(a) (b) (c) (d)
Example:
Calculate the current in an n-channel MOSFET. Consider an n-channel enhancement-mode MOSFET with the following parameters:
VT H = 0.4 V, W = 20 μm, L = 0.8 μm, μn= 650 cm2/V–s, tox = 200 Å, and εox = (3.9)(8.85 × 10−14) F/cm. Determine the current when
the transistor is biased in the saturation region for (a) VGS= 0.8 V and (b) VGS= 1.6 V.
EXAMPLE:
Example 9:
Given the circuits below, identify which region they are operating. Assuming VTH = 0.4V for NMOS and VTH = -0.4V PMOS.
(a) (b) (c) (d)

Vlsi Topic2b

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Physics of MOS Transistors

- Conceived in the 1930s but first realized in the 1960s

- the figure on the left is the schematic diagram of an n-channel

Channel Charge Density

Drain Current in Saturation for n-MOSFET

Drain Current For The Nonsaturation Or Triode Region

Drain Current in Saturation for p-MOSFET

Drain Current For The Non saturation Or Triode Region

Large Signal Model

Small signal model

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