PlasmaPro®100 100

Etch and deposition tools for wafer processing

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PlasmaPro 100 PlasmaPro 100
Extensive process library Wide temperature range

Our extensive process library supports a wide range of applications Nanoscale & advanced etch Deposition
for etch and deposition. Our processes are backed by guarantees to • Deep RIE of Silicon • Dielectric materials For our full range of
ensure rapid start-up during installation. • Compound semiconductor • Metal Nitrides processes visit:
• Metals • Metal Oxides www.oxinst.com/plasma
The PlasmaPro 100 range of etch and deposition tools can be fitted with a variety of substrate • Oxides • DLC
electrodes, enabling processes over a wide temperature range. • Organic materials
Etching
Two electrodes are available for etching:

• A wide temperature range electrode (-150°C to +400°C)

which can be cooled by liquid nitrogen, a fluid re-circulating
chiller or resistively heated. An optional blow out and fluid
exchange unit can automate the process of switching modes
Ultra high selectivity cryo-silicon etch GaAs/AlGaAs multilayer etch Deep Silicon Bosch etch High aspect ratio high quality
nanoscale SiO2 etch
Un-clamped InP etching (Cl2/Ar/N2 ) Redeposition-free hot chemical gold etch
• A fluid controlled electrode fed by a re-circulating chiller unit

Electrode Options

Wide temperature range electrode (-150 to +400°C)

Fluid cooled etch electrode

Up to 400°C for standard IC compatible PECVD processes

Up to 700°C for standard PECVD processes plus Si Nanowires
Up to 1000°C for standard PECVD processes plus Si Nanowires and polySi CVD
Deposition Up to 1200°C for growing graphene and 2D
Two electrodes are available for deposition:

• The ICP CVD tool electrode gives high

quality films from room temperature
to 400°C

• PECVD tools can be fitted with resistive

heated electrodes with capability up to
400°C or 1200°C
ICP CVD TEOS SiO2 at <100°C Low stress SiN film (400nm) High rate SiO2 PECVD Aligned ZnO nanorods. Courtesy Uni Si nanowires using Au NP as catalyst Graphene grown on Cu foil sub- 2D Boron Nitride
Cambridge strates

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PlasmaPro 100 Process Tool Software
Flexible process modules for plasma etch & deposition PC4500

Oxford Instruments’ PlasmaPro 100 process modules offer a 200mm platform with Oxford Instruments PC4500 software is renowned for its clarity and ease of use, making it quick
single wafer and multi-wafer batch capability. The process modules offer excellent to train process operators while retaining full functionality for users.
uniformity, high throughput and high precision processes.
Software features:
Our tools are well proven, with over 90% uptime and processes that are guaranteed to ensure rapid start-up during installation.
The PlasmaPro 100 range supports a number of markets including but not limited to; MEMS & Sensors, Optoelectronics,
• The front end visual interface is configured exactly for
your system
Discrete Devices and Nanotechnology. It is flexible enough to be used in research and development, with the
build quality to satisfy production needs. • Control a tool cluster from a single interface and PC
PlasmaPro 100 platforms may be clustered to combine technologies
• Process recipes are written, stored and recalled through
the same software, building a library
and processes with either cassette or single wafer loading options
• Password controlled user login allows different levels of
• Compatible with all wafer sizes up to 200mm user access and tasks, from ‘one-button’ run operation

• Rapid change between wafer sizes to full system functions

• Global customer support network • Advanced Graphical Log Viewer:

• Low cost of ownership and ease of serviceability • Continuous system data logging ensures traceability

• Compact footprint, flexible layout of each wafer and process run

• CE marked, safety compliant to EN 13849-1 • Quickly graph parameters from multiple runs on one
or more graphs

• Save graph of a “gold standard” run to easily

compare against data from subsequent runs
Optoelectronics MEMS, BioMEMS & Sensors
• Quick scroll and zoom graph axes

Cassette or single
wafer loading
Discrete Devices Nanotechnology options

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Etch Process Modules Etch Process Modules
Inductively Coupled Plasma Etching (ICP) Reactive Ion Etching (RIE)

The Cobra ICP etch sources produce a high

®
The RIE modules deliver anisotropic dry etching for
density of reactive species at low pressure. an extensive range of processes.
Substrate DC bias is independently controlled by
RIE features:
an RF generator, allowing control of ion energy
according to process requirements. • Solid state RF generators and close coupled matching network for fast
and consistent etching

Cobra ICP etch features: • Full area process gas inlet showerhead for uniform gas distribution
• Delivers reactive species to the substrate, with a uniform high • Electrodes for temperatures from -150ºC to +400ºC
conductance path through the chamber, allowing a high gas flow to be • High pumping capacity gives wide process pressure window
• Wafer clamping with He backside cooling is available for optimum
used while maintaining low pressure

• Electrodes available for temperatures from -150ºC to +400ºC with wafer temperature control
helium backside cooling and a range mechanical clamp designs RIE process chamber

• Optimised hardware and control to deliver processes requiring fast Options:

process step switching, e.g. Bosch
• Chamber wall heating and liners reduce cleaning requirements and increase uptime
• Variable height electrode can utilise the 3-dimensional characteristics
Cobra ICP etch process chamber: 65mm,
of the plasma and accommodate substrates up to 10mm thick at 180mm and 300mm etch sources available to
optimum height suit wafer size and radical to ion ratio to suit
process requirements

Options:

• Electrostatic shielding delivers reduced capacitive coupling resulting in low damage at the wafer
• Chamber wall heating and liners reduce cleaning requirements and increase uptime
• Active spacer on Cobra300 source controls ion uniformity at the wafer 70nm Fused Silica lines. 933nm deep Cr mask.
Courtesy of Cornell Nanoscience facility

Dielectric and metal etch – Failure analysis.

Sapphire etch - LEDs Cryogenic Si etch GaN etch
Courtesy of Atmel

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Deposition Process Modules Deposition Process Modules
Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD) Plasma Enhanced Chemical Vapour Deposition (PECVD)

The ICP CVD process module is designed to produce high The PECVD process modules are specifically
quality films with high density plasmas at low deposition designed to produce excellent uniformity and
pressures and temperatures. high rate films, with control of film properties
such as refractive index, stress, electrical
ICP CVD features: characteristics and wet chemical etch rate.
• Excellent quality low damage films • Electrodes available for temperature
at reduced temperatures. Typical ranges from 5ºC to 400ºC
PECVD features:
materials deposited include SiO2,
Si3N4 and SiON, Si and SiC at
• Patented ICP CVD gas distribution
• In-situ chamber cleaning and end-pointing
• Electrically grounded lower electrodes available:
technology
substrate temperatures as low as 5ºC

• ICP source sizes of 65mm, 180mm, • pointing

In situ chamber cleaning with end-
• 400ºC electrode - typical processes are SiO2, Si3N4 and
300mm delivering process uniformity SiON, amorphous Si and SiC
up to 200mm wafers PECVD process chamber
• 1200ºC electrode - in addition to processes above,
the electrode enables Si Nanowires, high temperature

Options: PECVD films with a wide variety of chemistries • RF powered showerhead with optimised gas delivery,
• Wall heating reduces chamber wall deposition ICP CVD process chamber
• An optimised upper electrode design , operating in high provides uniform plasma processing with LF/RF switching
allowing precise control of film stress
• Helium backside cooling with mechanical clamping ensures pressure, high RF power, high flow regimes, enables SiO2,
Si3N4 and SiON, amorphous Si deposition at increased rates
uniform wafer temperatures & optimised film properties
whilst maintaining excellent film properties and uniformity
across the wafer

Options:

• Flexible liquid source delivery module with capacity for up to 3 precursors

delivered by:
• Vapour pressure regulated
by heated vapour mass flow
controller
50nm SiNx • or Bubbled using argon
SiO2 deposited using TEOS and O2 by ICP
CVD in ~50µm deep trench 4:1 aspect ratio • The module is capable of
delivering a wide range of
SiNx deposited by ICP CVD at room
precursors including:
temperature for 22nm T-gate HEMT
• TEOS, TMA, TMB, TMP, ... SiO2 deposited using TEOS and O2
plasma gives excellent conformality

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Process Control Options Serviceability
Versatile solutions in etch and deposition Layout options

Laser interferometry Optical emission spectroscopy (OES) Highly configurable, flexible systems
• Allows ‘etch-to-depth’ within a layer • Allows a precise stop on a particular layer, improving The PlasmaPro 100 Systems are designed to be installed in ballroom, through

• Precise etch depth control within multi-layer structures hroughput and yield the wall or to the wall configuration.

• Allows end pointing on small samples or those that do • Ideal for full wafer or batch end pointing
not provide a strong OES endpoint
• Enables monitoring of chamber condition and process ‘health’
• Recommended for end pointing of PECVD chamber cleans
Through wall

To the wall

Cluster Options
Platforms may be clustered to combine technologies and processes with either cassette or single wafer
Image allows positioning of laser spot Example laser interferometry Example OES endpoint traces loading options. Hexagonal or square transfer chamber configurations are available.
endpoint traces

4-way square handler Brooks MMX cluster 6-way hex handler

Gas Control System
A modular upgrade path for gas lines enables users
to maximise flexibility of the PlasmaPro 100.
The remote gas line by-pass facility allows broad
functionality & ease of use.

• The design enables the easy addition of further

gas lines, up to a maximum of 12

• Optional purge facility

• Heated lines with temperature control
• The gas pod may be sited remotely in a service
area or mounted on the process module frame.
It is vented and ready for ducting into an extraction system for full safety
compliance

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Global Service and Support
For further information about our PlasmaPro 100 range,
please contact your local Oxford Instruments Office

Oxford Instruments
Plasma Technology
Excellent serviceability & low
cost of ownership For more information please email:
plasma@oxinst.com
The flexible configuration provides ease of
access to all aspects of the tool ensuring UK
excellent serviceability and low cost of Yatton
Tel: +44 (0) 1934 837000
ownership.
Germany
Wiesbaden
Superior environmental efficiency Tel: +49 (0) 6122 937 161
PlasmaPro 100 has a low heat load and high energy efficiency. The India
tool has efficient ergonomics and complies with Semi S2/S8 and cluster Mumbai
Tel: +91 22 4253 5100
capability, making this a tool of choice for production users.
Japan
Tokyo
Tel: +81 3 5245 3261
Customer support & training
PR China
Our range of service level agreements will be Beijing
Tel: +86 10 6518 8160/1/2
tailored to your needs:
Shanghai

• Choice of support coverage up to 24/7

Tel: +86 21 6132 9688

• Scheduled preventative maintenance calls

Singapore
Tel: +65 6337 6848

• Managed spares inventory options Taiwan

• Preferential spare part pricing Tel: +886 3 5788696

• Process & user maintenance training US, Canada & Latin America
Concord, MA
• Guaranteed response times for support TOLLFREE: +1 800 447 4717
engineer visits and technical hotline calls

Visit www.oxford-instruments.com/plasma www.oxford-instruments.com

This publication is the copyright of Oxford Instruments Nanotechnology Tools Ltd and provides outline information
only, which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or
form part of any order or contract or regarded as the representation relating to the products or services concerned.
Oxford Instruments’ policy is one of continued improvement. The company reserves the right to alter without notice the
specification, design or conditions of supply of any product or service. Oxford Instruments acknowledges all trademarks
and registrations. © Oxford Instruments Nanotechnology Tools Ltd, 2017. All rights reserved. Ref: OIPT/100/2017/001

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