Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 15

15.1 See diagrams in Figure 8.29 15.6

_______________________________________ s10 7
f   5 10 9 Hz
15.2
2 L 2 10 10 4
 
V 0.60  0.15  5 GHz
R   25  _______________________________________
I 2  2010 3
_______________________________________ 15.7

15.3 (a) n po 
ni2


1.5 1010 
2

NB 8 1015
1 R min
fr  1  2.8125 10 4 cm 3
2 R min C j Rp
V 
1 10 (i) n p 0  n po exp BE 
 1

2 10  2  10 9  1  Vt 
 n p 0  
 2.39  10 Hz  23.9 MHz  V BE  Vt ln  
7
 n po 
_______________________________________  
 1014 
15.4  0.0259  ln  
4 
(a) no L  1012 cm 2  2.8125 10 
 0.5696 V
1012
(i) L  15
 10 3 cm  10  m (ii) Neglecting any recombination in the base
10 eD B n po A V 
L 10 3 IC  exp BE 
(ii)     6.667 10 11 s xB  Vt 
 d 1.5 10 7
1 1 
   
1.6 10 19 20 2.8125 10 4 0.4
(iii) f   2 10  4
 6.667  10 11
 0.5696 
 1.5 1010 Hz  15 GHz  exp 
(b)  0.0259 
1012 I C  0.640 A
(i) L  16  10  4 cm  1  m
10 (b) n p 0   0.1N B  8  1014 cm 3
L 10 4  8 1014 
(ii)     6.667 10 12 s (i) V BE  0.0259  ln  
4 
 d 1.5 10 7  2.8125 10 
(iii) f  
1 1  0.6234 V
 6.667  10 12
(ii) I C 
  
1.6 10 19 20 2.8125 10 4 0.4 
 1.5 1011 Hz  150 GHz 2 10  4
_______________________________________  0.6234 
 exp 
15.5  0.0259 
V 9 I C  5.12 A
(a)     6  10 3 V/cm
L 15  10  4 _______________________________________
(b)  d  1.5 10 7 cm/s
d
1.5 10 7
(c) f    11010 Hz
L 15 10  4
 10 GHz
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

15.8 15.10
(a) From Figure 7.15, BVBC  450 V BVCBO
(a) BVCEO 
ex 2
N N  N B  n

(b) V pt  B
 B C
2 s NC 300
(i) BVCEO   139 V

1.6 10 2 10 
19 4 2 3
10
211.7 8.85 10  14
(ii) BVCEO 
300
 81.4 V

8 10 6 10
15 14
 8 1015  3
50
6 1014 (b)
V pt  354.4 V 125
(i) BVCEO   58.0 V
3
10
(c) From Figure 7.15, BVBE  65 V (ii) BVCEO 
125
 33.9 V
3
_______________________________________ 50
_______________________________________
15.9
From the junction breakdown curve, for 15.11
BVCBO  1000 V, we need the collector doping (a) We have
concentration to be N C  21014 cm 3 .  eff   A  B   A   B
so
Depletion width into the base (neglect V bi ). 180  25 B  25   B
1/ 2 or
2 V  NC  1  155  26 B
x p   s BC   
 
 e  NB  N B  N C  which yields

 211.7 8.85 10 14 1000

  B  5.96

 
1.6 10 19  (b) We have
 B i EA  iCB
1/ 2
 2  1014  1  or
  
 5  1015  2  1014 
 5  10
15
   1  A 
 B    iCA  iCB
or  A 
x p  3.16  10 4 cm  3.16  m so
(Minimum base width) 5.96 1  25   iCA  20
Depletion width into the collector  25 
1/ 2
2 V  NB  1  which yields
x n   s BC   
N  N  N  i CA  3.23 A
 e  C  B C 
 
_______________________________________
 211.7 8.85 10 14 1000

 
1.6 10 19  15.12

 5  1015  1 
1/ 2 1 
(b) PT    I C , max  VCEQ  
  
 5  1015  2  1014  2 
 2  10 
14

1 
or 30    I C , max 60
 2 
x n  78.9 10 4 cm  78.9  m
 I C ,max  1.0 A
(Minimum collector width)
_______________________________________ VCEQ 60
RL    120 
I CQ 0.5
VCE,max  120 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

1 
 
We have
(c) PT    I C , max  VCEQ 200  V DS
2  ID 
100
2
30   VCEQ so we can write
2
 200  V DS  V2
 VCEQ  30 V P     V DS  DS
 100  Ron
VCEQ 30
RL    30  For T  25 C, Ron  2  .
I CQ 1 Then
VCE,max  2VCEQ  230  60 V  200  V DS  V2
   V DS  DS
(d) Same as part (b)  100  2
_______________________________________ which yields
V DS  3.92 V
15.13
The power is
V 
(a) PT  VCEQI CQ   CC   I CQ  200  3.92 
 2  P 3.92  7.69 W
 100 
10  6I CQ  I CQ  1.667 A
We then have
VCEQ 6 T (C) R on (  ) V DS (V)
P (W)
RL    3.60 
I CQ 1.667 25 2.0 3.92 7.69
(b) I C ,max  2I CQ  21.667  3.333 A 50 2.33 4.56 8.91
75 2.67 5.19 10.1
_______________________________________
100 3.0 5.83 11.3
15.14 _______________________________________
If VCC  25 V, then
15.16
V
I C max   CC 
25 (a) We have, for three devices in parallel,
 0.25 A  I C , rated
R L 100
 5  V 1.51  5
V V V
 
The power 1 .8 2 2 .2
P  I C VCE  I C VCC  I C R L  or
Now, to find the maximum power point V  3.311 V
V
 0  VCC  2 I C R L  25  I C 2100 
dP
Then, I  , so that
dI C R
which yields I 1  1.839 A
I C  0.125 A I 2  1.656 A
So I 3  1.505 A
Pmax   0.12525  0.125100 Now, P  IV , so
or P1  6.09 W
Pmax   1.56 W  PT P2  5.48 W
So maximum VCC is VCC  25 V P3  4.98 W
_______________________________________ (b) Now
 1 1 1 
15.15 V     5  V  3.882 V
V DS  1.8 3.6 2.2 
Now R on  Then
ID
I 1  2.157 A, P1  8.37 W
Power dissipated in the transistor
I 2  1.078 A, P2  4.19 W
V2
P  I DV DS  DS I 3  1.765 A, P3  6.85 W
Ron
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

15.17 15.18
(a) Let the n-drift region doping (b) In the saturation region,
concentration be N d  1014 cm 3 . I D  K n VGS  VT   0.20VGS  2
2 2

  
 1014 1015  V DS  V DD  I D R L  60  I D 10
Vbi  0.0259  ln  
 
 1.5  1010 
2 For VGS  4 V, I D  0.8 A, V DS  52 V
P  I DV DS  0.852  41.6 W
 0.516 V
For the base region, For VGS  6 V, I D  3.2 A, V DS  28 V
 2  V  V R   N d
1/ 2 P  3.228  89.6 W
 1 
x p   s bi   
 N  N  N  For VGS  8 V, transistor biased in the
e  a  a d 
nonsaturation region.

 
 211.7 8.85 10 14 0.516  200 60  V DS
 
 0.20  28  2 V DS  V DS
2

 1.6 10 19 10

 1014  
1/ 2 2
We obtain 2.0V DS  25V DS  60  0
1 
  15  14
 10  1015   V DS  3.24 V, I D  5.676 A
 10  

 P  3.245.676   18.39 W
x p  4.86  10 4 cm  4.86  m
For VGS  6 V, P  PT so transistor may
= channel length
be damaged.

 
_____________________________________
 211.7  8.85 10 14 0.516  200
xn  
 1.6 10 19 15.19
1/ 2 1  1 
 1015  1 
 (a) P    V DD   I D , max 
  14  14
 10  1015   2  2 
 10  

 
60  I 
x n  4.86 10 3 cm  48.6  m 45    D   I D, max  3 A
 2  2 
= drift region width V DD 60
(b) Assume N d  1014 cm 3 RL    20 
I D, max 3
Vbi  0.516 V
 V   I D, max 
 2  V  V R   N d  
1/ 2
(b) P   DD    

1  2   2 
x p   s bi   
 N  N  N 
e  a  a d  V V
R L  DD  10  I D, max  DD

 
 211.7 8.85 10 14 0.516  80 I D, max 10
 1.6 10 19 Then
1/ 2 V  V 
 1014  1 
 P   DD    DD 
  15  14
 10  1015   2   20 
 10  
 Or
x p  3.08  10 4 cm  3.08  m V2
45  DD
= channel length 40

 211.7 8.85 10 14 0.516  80
xn  
  V DD  42.4 V
 1.6 10 19 _______________________________________
1/ 2
 1015  1 

  14  14
 10  1015 
 10  

x n  3.08 10 3 cm  30.8  m
= drift region width
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

15.20 15.22
We have  1   2  1 . Now Case 1: Terminal 1(+), terminal 2(-), and I G
1 2 negative: this triggering was discussed in the
1  and  2  text.
1  1 1  2
so
Case 2: Terminal 1(+), terminal 2(-), and I G
 2
1   2  1  1 positive: the gate current enters the P2 region
1  1 1   2 directly so that J3 becomes forward biased.
which can be written as Electrons are injected from N2 and diffuse into
 1   2    2 1   1  N1, lowering the potential of N1. The junction
1 1
1   1 1   2  J2 becomes more forward biased, and the
increased current triggers the SCR so that
or
P2N1P1N4 turns on.
1  1 1   2   1 1   2    2 1  1 
Expanding, we find Case 3: Terminal 1(-), terminal 2(+), and I G
1  1   2  1  2 positive: the gate current enters the P2 region
 1  1  2   2  1  2 directly so that the J3 junction becomes more
which yields forward biased. More electrons are injected
1  2  1 from N2 into N1 so that J1 also becomes more
forward biased. The increased current triggers
_______________________________________
the P1N1P2N2 device into its conducting state.
15.21
The reverse-biased p-well to substrate junction Case 4: Terminal 1(-), terminal 2(+), and I G
corresponds to the J 2 junction in an SCR. The negative: in this case, the J4 junction becomes
forward biased. Electrons are injected from N3
photocurrent generated in this junction will be
and diffuse into N1. The potential of N1 is
similar to the avalanche generated current in an
lowered which increases the forward biased
SCR, which can trigger the device.
potential of J1. This increased current then
_______________________________________
triggers the P1N1P2N2 device into its
conducting state.
_______________________________________