2N7002H 2909812

2N7002H
60 V, N-channel Trench MOSFET

1 December 2021 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted
Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits

• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C - - 60 V
VGS gate-source voltage -20 - 20 V
ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 360 mA
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 500 mA; Tj = 25 °C - 1 1.6 Ω
resistance
2
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
Nexperia 2N7002H
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate 3
D
2 S source
3 D drain
G
1 2 mbb076 S
SOT23
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
2N7002H SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm SOT23
pitch; 2.9 mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes
Type number Marking code[1]
2N7002H M9%
[1] % = placeholder for manufacturing site code
2N7002H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. All rights reserved
Product data sheet 1 December 2021 2 / 15

Nexperia 2N7002H
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tamb = 25 °C - 60 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tamb = 25 °C [1] - 360 mA
VGS = 10 V; Tamb = 100 °C [1] - 230 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 1.4 A
Ptot total power dissipation Tamb = 25 °C [2] - 340 mW
[1] - 420 mW
Tsp = 25 °C - 1.1 W
Tj junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - 360 mA
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-030137 aaa-030138
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
-75 -25 25 75 125 175 -75 -25 25 75 125 175
Tamb (°C) Tamb (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a
function of ambient temperature function of ambient temperature

Nexperia 2N7002H
aaa-034201
10
ID
(A)
Limit RDSon = VDS/ID tp = 10 µs
1
100 µs
1 ms
10-1 DC; Tsp = 25 °C
DC; Tamb = 25 °C; 10 ms

drain mounting pad 1 cm2
10-2
100 ms
10-3
10-1 1 10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage

Nexperia 2N7002H
9. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from in free air [1] - 310 370 K/W
junction to ambient [2] - 260 300 K/W
Rth(j-sp) thermal resistance from - - 115 K/W
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
017aaa015
103
Zth(j-a) duty cycle = 1

(K/W) 0.75
0.5
0.33
102 0.25
0.2
0.1 0.05
0.02
10 0.01
0
1
10- 3 10- 2 10- 1 1 10 102 103
tp (s)
FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa016
103
Zth(j-a)
duty cycle = 1
(K/W)
0.75
0.5
102 0.33
0.25
0.2
0.1 0.05
0 0.02
10 0.01
1
10- 3 10- 2 10- 1 1 10 102 103
tp (s)
2
FR4 PCB, mounting pad for drain 1 cm
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Nexperia 2N7002H
10. Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V
breakdown voltage
VGSth gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C 1.1 1.75 2.4 V
voltage
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA
RDSon drain-source on-state VGS = 10 V; ID = 500 mA; Tj = 25 °C - 1 1.6 Ω
resistance VGS = 10 V; ID = 500 mA; Tj = 150 °C - 2.1 3.3 Ω
VGS = 5 V; ID = 50 mA; Tj = 25 °C - 1.3 2 Ω
gfs forward VDS = 10 V; ID = 200 mA; Tj = 25 °C - 400 - mS
transconductance
Dynamic characteristics
QG(tot) total gate charge VDS = 30 V; ID = 300 mA; VGS = 4.5 V; - 0.3 0.5 nC
QGS gate-source charge Tj = 25 °C - 0.1 - nC
QGD gate-drain charge - 0.1 - nC
Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 34 - pF
Coss output capacitance Tj = 25 °C - 7 - pF
Crss reverse transfer - 4 - pF
capacitance
td(on) turn-on delay time VDS = 50 V; RL = 250 Ω; VGS = 10 V; - 2 - ns
tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 3 - ns
td(off) turn-off delay time - 6 - ns
tf fall time - 4 - ns
Source-drain diode
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 °C 0.47 0.75 1.1 V

Nexperia 2N7002H
aaa-034202 aaa-034203
0.8 10-3
10 V
4.5 V
ID
(A) ID
4.0 V (A)
0.6
min typ max
10-4
0.4
3.5 V
10-5
0.2
3.0 V
VGS = 2.4 V
0 10-6
0 1 2 3 4 5 0 1 2 3
VDS (V) VGS (V)
Tj = 25 °C Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values gate-source voltage
aaa-034204 aaa-034205
7 7
RDSon 3.5 V 3.7 V RDSon
( ) ( )
6 6
5 5
4V
4 4
4.5 V
3 3
Tj = 150 °C
2 2
5V Tj = 25 °C
1 1
VGS = 10 V
0 0
0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10
ID (A) VGS (V)
Tj = 25 °C ID = 1.2 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values

Nexperia 2N7002H
aaa-034206 aaa-034207
1.0 2.5
ID a
(A)
0.8 2.0
0.6 1.5
0.4 1.0
Tj = 150 °C
0.2 0.5
Tj = 25 °C
0 0
0 1 2 3 4 5 -60 0 60 120 180
VGS (V) Tj (°C)
VDS = 5 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-034208 aaa-034209
3 102
VGS(th)
(V) Ciss
C
(pF)
2
max
10
typ Coss
1
Crss
min
0 1
-60 0 60 120 180 10-1 1 10 102
Tj (°C) VDS (V)
ID = 250 µA; VDS = VGS f = 1 MHz; VGS = 0 V

Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature as a function of drain-source voltage; typical
values

Nexperia 2N7002H
aaa-034210
5
VGS VDS
(V)
4
ID
3
VGS(pl)
2
VGS(th)
VGS
1
QGS2
QGS1
0
0 0.1 0.2 0.3 0.4 QGS QGD
QG (nC) QG(tot)
ID = 300 mA; VDS = 30 V; Tj = 25 °C 003aaa508
Fig. 14. Gate-source voltage as a function of gate Fig. 15. Gate charge waveform definitions
charge; typical values
aaa-034231
1.2
IS
(A)
0.8
Tj = 150 °C
0.4
Tj = 25 °C
0
0 0.4 0.8 1.2
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values

Nexperia 2N7002H
11. Test information
P t1
duty cycle δ =
t2 t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.

Nexperia 2N7002H
12. Package outline

Plastic surface-mounted package; 3 leads SOT23
D B E A X
HE v A
A1
1 2 c
e1 bp w B Lp
e
detail X
0 1 2 mm
scale
Dimensions (mm are the original dimensions)
Unit A A1 bp c D E e e1 HE Lp Q v w
max 1.1 0.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm nom 1.9 0.95 0.2 0.1
min 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
sot023_po
Outline References European

Issue date
version IEC JEDEC JEITA projection
14-06-19
SOT23 TO-236AB 14-09-22
Fig. 18. Package outline SOT23

Nexperia 2N7002H
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
3 1.7 2
solder paste
0.7 0.6 occupied area

(3×) (3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1 sot023_fr
Fig. 19. Reflow soldering footprint for SOT23

2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6 2.6 solder resist
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig. 20. Wave soldering footprint for SOT23

Nexperia 2N7002H
14. Revision history

Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
2N7002H v.2 20211201 Product data sheet - 2N7002H v.1
Modifications: • Changed document status to "Product data sheet"
2N7002H v.1 20211119 Preliminary data sheet - -

Nexperia 2N7002H
equipment, nor in applications where failure or malfunction of an Nexperia
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Data sheet status risk.
Quick reference data — The Quick reference data is an extract of the
Document status Product Definition product data given in the Limiting values and Characteristics sections of this
[1][2] status [3] document, and as such is not complete, exhaustive or legally binding.
Objective [short] Development This document contains data from Applications — Applications that are described herein for any of these
data sheet the objective specification for products are for illustrative purposes only. Nexperia makes no representation
product development. or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short] Qualification This document contains data from
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modifications or additions. Nexperia does not give any representations or the Absolute Maximum Ratings System of IEC 60134) will cause permanent
warranties as to the accuracy or completeness of information included herein damage to the device. Limiting values are stress ratings only and (proper)
and shall have no liability for the consequences of use of such information. operation of the device at these or any other conditions above those
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with the same product type number(s) and title. A short data sheet is
repeated exposure to limiting values will permanently and irreversibly affect
intended for quick reference only and should not be relied upon to contain
the quality and reliability of the device.
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Nexperia 2N7002H
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Test information........................................................ 10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2021. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 1 December 2021

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2N7002H

60 V, N-channel Trench MOSFET

2. Features and benefits

4. Quick reference data

[1] % = placeholder for manufacturing site code

Product data sheet 1 December 2021 2 / 15

Product data sheet 1 December 2021 3 / 15

DC; Tamb = 25 °C; 10 ms

Product data sheet 1 December 2021 4 / 15

Zth(j-a) duty cycle = 1

FR4 PCB, standard footprint

Product data sheet 1 December 2021 5 / 15

Product data sheet 1 December 2021 6 / 15

Product data sheet 1 December 2021 7 / 15

ID = 250 µA; VDS = VGS f = 1 MHz; VGS = 0 V

Product data sheet 1 December 2021 8 / 15

Product data sheet 1 December 2021 9 / 15

11. Test information

Fig. 17. Duty cycle definition

Product data sheet 1 December 2021 10 / 15

12. Package outline

Dimensions (mm are the original dimensions)

Outline References European

Fig. 18. Package outline SOT23

Product data sheet 1 December 2021 11 / 15

0.7 0.6 occupied area

Fig. 19. Reflow soldering footprint for SOT23

4.6 2.6 solder resist

preferred transport direction during soldering

Fig. 20. Wave soldering footprint for SOT23

Product data sheet 1 December 2021 12 / 15

14. Revision history

Product data sheet 1 December 2021 13 / 15

Product data sheet 1 December 2021 14 / 15

© Nexperia B.V. 2021. All rights reserved

Product data sheet 1 December 2021 15 / 15

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