Pmv90ene 2939007

PMV90ENE
30 V, N-channel Trench MOSFET

20 April 2016 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits

• Logic level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 30 V
VGS gate-source voltage -20 - 20 V
ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 3.7 A
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 3 A; Tj = 25 °C - 54 72 mΩ
resistance
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
2
for drain 6 cm .
Nexperia PMV90ENE
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate 3 D
2 S source
3 D drain G
1 2
TO-236AB (SOT23)
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMV90ENE TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PMV90ENE %GH
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - 30 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 3.7 A
VGS = 10 V; Tamb = 25 °C [1] - 3 A
VGS = 10 V; Tamb = 100 °C [1] - 1.9 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 12 A
Ptot total power dissipation Tamb = 25 °C [2] - 460 mW
PMV90ENE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 20 April 2016 2 / 16

Nexperia PMV90ENE
Symbol Parameter Conditions Min Max Unit

[1] - 1.1 W
Tsp = 25 °C - 4.5 W
Tj junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - 1 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
2
for drain 6 cm .
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123 017aaa124
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
- 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175
Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a
function of junction temperature function of junction temperature

Nexperia PMV90ENE
aaa-022256
102
ID
(A) Limit RDSon = VDS/ID
10 tp = 10 µs
100 µs
1
1 ms
DC; Tsp = 25 °C 10 ms
10-1 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1 1 10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage

Nexperia PMV90ENE
9. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance in free air [1] - 227 270 K/W
from junction to [2] - 99 115 K/W
ambient
t≤5s [2] - 66 78 K/W
Rth(j-sp) thermal resistance - 20 28 K/W
from junction to solder
point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
2
aaa-022257
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
0.50
102
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
10-3 10-2 10-1 1 10 102 103
tp (s)
FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Nexperia PMV90ENE
aaa-022258
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
10-3 10-2 10-1 1 10 102 103
tp (s)
2
FR4 PCB, mounting pad for drain 6 cm
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Nexperia PMV90ENE
10. Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
breakdown voltage
VGSth gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C 1 1.5 2.5 V
voltage
IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -2 µA
RDSon drain-source on-state VGS = 10 V; ID = 3 A; Tj = 25 °C - 54 72 mΩ

resistance
VGS = 10 V; ID = 3 A; Tj = 150 °C - 88 118 mΩ
VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C - 70 100 mΩ
gfs forward VDS = 10 V; ID = 3 A; Tj = 25 °C - 9 - S

transconductance
RG gate resistance f = 1 MHz - 11.5 - Ω
Dynamic characteristics
QG(tot) total gate charge VDS = 15 V; ID = 3 A; VGS = 10 V; - 3.6 5.5 nC
QGS gate-source charge Tj = 25 °C - 0.4 - nC
QGD gate-drain charge - 0.7 - nC
Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 160 - pF
Coss output capacitance Tj = 25 °C - 33 - pF
Crss reverse transfer - 26 - pF

capacitance
td(on) turn-on delay time VDS = 15 V; ID = 3 A; VGS = 10 V; - 6 - ns
tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 6 - ns
td(off) turn-off delay time - 11 - ns
tf fall time - 4 - ns
Source-drain diode
VSD source-drain voltage IS = 1 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V

Nexperia PMV90ENE
aaa-022259 aaa-022260
12 10-3
ID VGS = 10 V ID
(A) (A)
4.5 V 3.5 V
min typ max
8 10-4
3.0 V
4 10-5
2.5 V
0 10-6
0 1 2 3 4 5 0 1 2 3
VDS (V) VGS (V)
Tj = 25 °C Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values gate-source voltage
aaa-022261 aaa-022262
300 400
2.8 V 3.0 V 3.2 V 3.3 V
RDSon
RDSon (mΩ)
(mΩ)
300
200
100
100 4.5 V Tj = 150 °C

100
VGS = 10 V
Tj = 25 °C
0 0
0 4 8 12 0 2 4 6 8 10
ID (A) VGS (V)
Tj = 25 °C ID = 2.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values

Nexperia PMV90ENE
aaa-022263 aaa-022264
12 2.0
a
ID
(A)
1.5
8
1.0
4
Tj = 150 °C
0.5
Tj = 25 °C
0 0
0 1 2 3 4 5 -60 0 60 120 180
VGS (V) Tj (°C)
VDS > ID × RDSon Fig. 11. Normalized drain-source on-state resistance

Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical
function of gate-source voltage; typical values values
aaa-022265 aaa-022266
3 103
VGS(th) C
(V) (pF)
Ciss
2 102
max
Coss
Crss
1 10
typ
min
0 1
-60 0 60 120 180 10-1 1 10 102
Tj (°C) VDS (V)
ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V

Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature as a function of drain-source voltage; typical
values

Nexperia PMV90ENE
aaa-022267
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
4 VGS
QGS2
QGS1
2 QGS QGD
QG(tot)
003aaa508
0 Fig. 15. MOSFET transistor: Gate charge waveform

0 1 2 3 4
QG (nC) definitions
ID = 3 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-022268
4
IS
(A)
Tj = 150 °C
1
Tj = 25 °C
0
0 0.4 0.8 1.2
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P t1
duty cycle δ =
t2 t2
t1
t
006aaa812
Fig. 17. Duty cycle definition

Nexperia PMV90ENE
12. Package outline

Plastic surface-mounted package; 3 leads SOT23
D B E A X
HE v A
A1
1 2 c
e1 bp w B Lp
e
detail X
0 1 2 mm
scale
Dimensions (mm are the original dimensions)
Unit A A1 bp c D E e e1 HE Lp Q v w
max 1.1 0.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm nom 1.9 0.95 0.2 0.1
min 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
sot023_po
Outline References European

Issue date
version IEC JEDEC JEITA projection
14-06-19
SOT23 TO-236AB 14-09-22
Fig. 18. Package outline TO-236AB (SOT23)

Nexperia PMV90ENE
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
3 1.7 2
solder paste
0.7 0.6 occupied area

(3×) (3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1 sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6 2.6 solder resist
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

Nexperia PMV90ENE
14. Revision history

Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMV90ENE v.1 20160420 Product data sheet - -

Nexperia PMV90ENE
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Applications — Applications that are described herein for any of these

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trademarks are the property of their respective owners.

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16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................5
10 Characteristics ....................................................... 7
11 Test information ................................................... 10
12 Package outline ................................................... 11
13 Soldering .............................................................. 12
14 Revision history ................................................... 13
15 Legal information .................................................14
15.1 Data sheet status ............................................... 14
15.2 Definitions ...........................................................14
15.3 Disclaimers .........................................................14
15.4 Trademarks ........................................................ 15
© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 April 2016

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PMV90ENE

30 V, N-channel Trench MOSFET

2. Features and benefits

4. Quick reference data

VGS gate-source voltage -20 - 20 V

ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 3.7 A

[1] % = placeholder for manufacturing site code

VGS gate-source voltage -20 20 V

ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 3.7 A

VGS = 10 V; Tamb = 25 °C [1] - 3 A

VGS = 10 V; Tamb = 100 °C [1] - 1.9 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 12 A

Ptot total power dissipation Tamb = 25 °C [2] - 460 mW

Product data sheet 20 April 2016 2 / 16

Symbol Parameter Conditions Min Max Unit

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Product data sheet 20 April 2016 3 / 16

Product data sheet 20 April 2016 4 / 16

FR4 PCB, standard footprint

Product data sheet 20 April 2016 5 / 16

Product data sheet 20 April 2016 6 / 16

IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA

VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -2 µA

RDSon drain-source on-state VGS = 10 V; ID = 3 A; Tj = 25 °C - 54 72 mΩ

VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C - 70 100 mΩ

gfs forward VDS = 10 V; ID = 3 A; Tj = 25 °C - 9 - S

QGS gate-source charge Tj = 25 °C - 0.4 - nC

QGD gate-drain charge - 0.7 - nC

Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 160 - pF

Coss output capacitance Tj = 25 °C - 33 - pF

Crss reverse transfer - 26 - pF

tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 6 - ns

td(off) turn-off delay time - 11 - ns

Product data sheet 20 April 2016 7 / 16

100 4.5 V Tj = 150 °C

Product data sheet 20 April 2016 8 / 16

VDS > ID × RDSon Fig. 11. Normalized drain-source on-state resistance

ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V

Product data sheet 20 April 2016 9 / 16

0 Fig. 15. MOSFET transistor: Gate charge waveform

11. Test information

Fig. 17. Duty cycle definition

Product data sheet 20 April 2016 10 / 16

12. Package outline

Dimensions (mm are the original dimensions)

Outline References European

Fig. 18. Package outline TO-236AB (SOT23)

Product data sheet 20 April 2016 11 / 16

0.7 0.6 occupied area

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

4.6 2.6 solder resist

preferred transport direction during soldering

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

Product data sheet 20 April 2016 12 / 16

14. Revision history

Product data sheet 20 April 2016 13 / 16