FUJI POWER SEMICONDUCTORS

IGBT-IPM R-SERIES

APPLICATION MANUAL

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 CONTENTS
Chapter 1 Features
1.1 IGBT-IPM Characteristics........................................................................ 3
1.2 R-IPM Characteristics.............................................................................. 4
1.3 Definition of Type Name and Lot No........................................................ 4
1.4 R-IPM Line Up......................................................................................... 5

Chapter 2 Explanation of Symbols/Terminology

2.1 Symbols in Block Diagram....................................................................... 6
2.2 Technical Terms and Definitions ............................................................. 7

Chapter 3 Explanation of Functions

3.1 Built-in Electric Functions ...................................................................... 12
3.2 Explanation of Functions ....................................................................... 12
3.3 Timing chart........................................................................................... 17

Chapter 4 Examples of Application Circuits

4.1 The Entire Circuit................................................................................... 19
4.2 Precautions ........................................................................................... 19
4.3 The Opto-couplers................................................................................. 20
4.4 Connector.............................................................................................. 20

Chapter 5 Cooling Design

5.1 Junction Temperature............................................................................ 21
5.2 Precautions for Heat Sink Selection ...................................................... 21

Chapter 6 Precautions Using R-IPM

6.1 Main Power Source Vd.......................................................................... 22
6.2 Control Power Source Vcc .................................................................... 22
6.3 Protection Operation.............................................................................. 23
6.4 Reliability ............................................................................................... 25
6.5 Others.................................................................................................... 25

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Chapter 1 Features

1.1 IGBT-IPM Characteristics

The intelligent power module (IPM) has the following characteristics when compared with the combination of the
conventional IGBT modules and drive circuits.

1.1.1 Built-in drive circuit

- IGBT gate drives operate under optimal conditions.
- Since the wiring length between the internal drive circuit and IGBT is short and the impedance of the drive
circuit is low, no reverse bias DC source is required.
- The R-series IPM (R-IPM) devices require four control power sources, one source on the lower arm side, and
three individual sources on the upper arm side with proper circuit isolation.

1.1.2 Built-in protection circuits

The following built-in protective circuits are included in the R-IPM devices:
(OC): Overcurrent protection
(SC): Short-circuit protection
(UV): Undervoltage protection for control power source
(OH): Overheating protection
(ALM): External alarm output

1) The OC and SC protection circuits provide protection against IGBT damage caused by overcurrent or load
short-circuits. These circuits monitor the collector current of each IGBT using detection elements and, thus can
minimize the possibility of severe damage to the IGBT. They also protect against arm short-circuits. Over Current
protection=OC, Short Circuit protection=SC.

2) The UV protection circuit is in all of the IGBT drive circuits. This circuit monitors the Vcc supply voltage level
against the IGBT drive Vin. In the event that the Vcc level falls below a specified level, the drive is biased to turn
off the IGBT. Because of possible erratic Vcc voltage fluctuation in the drive source, hysteresis is added to the
circuit to prevent premature shutdown. Under Voltage protection=UV.

3) The OH protection circuit protects the IGBT and FWD from overheating. It also monitors the insulating
substrates with temperature detection elements installed on the insulating substrates inside the IPM
. Case Temperature Over Heating protection=TcOH

4) Additionally, each IGBT chip of an R-IPM contains a temperature detection element on the IGBT die, which
allows the OH to act rapidly when abnormal higher chip temperatures are detected. The protective operation time
of TjOH after overheating is detected faster than that of TcOH time. Junction Temperature Over Heating
protection=TjOH.

5) The ALM circuit outputs an alarm signal to outside of the IPM and is only monitored from the lower IGBTs. It is
possible to shutdown the system reliably by issuing the alarm signal when the circuit detects an abnormal
condition (specified above).

This signal is typically sent to the microcomputer controlling the IPM when the protection functions of TcOH and
the lower arm side OC, SC, UV, or TjOH are detected.

1.1.3 Built-in brake circuit (7 in 1 IPM)

- The drive circuits and protection circuits are included in the brake IGBT as same as inverter IGBTs.
For the motor control inverter application, a brake circuit can be built to protect bus over voltage by just adding a
power dissipating resistor.
The dynamic brake IGBT fault information is also sent to the ALM output

1.1.4 Structural features

1) The insulation structure of ceramic substrates enables you to mount IPM directly on the heat sink, allowing
more efficient cooling.

2) The control signal terminals are lined up with the standard pitch of 2.54mm and can be connected by one
connector. Using guide pins, you can also insert a connector for printed circuit board mounting.
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3) The main power source input (P, N), brake output (B), and output terminal (U, V, W) are all arranged nearby,
providing a package structure that allows for easy wiring.
4) The main terminals can be connected to a large current supply with M5 screws reliably.

5) Electrical connections (made by screws or connectors) do not require soldering, allowing the ease of module
removal if necessary.

1.2 R-IPM Characteristics

1.2.1 The electrical characteristics are equal to those of the 600V N-series and 1200V S-
series IGBTs.
- Low surge and low noise due to soft switching, contributing to EMC counter measures.
- Total losses are reduced because of the improved trade-off between the VCE (sat) and switching loss
characteristics.

1.2.2 Higher reliability

- In comparison with the conventional Fuji IPMs (J-Series and N-Series IPMs), reliability has improved by
significantly reducing the number of SMD components to 8.
- The IGBT chips are protected from any abnormal overheating by Tj detection function.

1.2.3 Package compatibility

1) Medium-capacity series
The main terminal, control terminal, and mounting hole positions of the 600V series 50A to 150A, and 1200V
series 25A to 75A (6 in 1-package, 7 in 1-package) are compatible with those of the conventional Fuji IPMs (J-
Series and N-Series IPMs ).

2) Large-capacity series
The main terminal and mounting hole positions are compatible with those of the 600V series 200A to 300A, and
1200V series 100A to 150A (6 in 1-package, 7 in 1-package) J-IPM. The configuration of control terminals is the
same as that of packages of 600V/150A or lower, and the same connector can be applied.
Built-in brake IGBT is also available.

3) The height of the cover is lower than that of the conventional Fuji models, allowing for compactness while
maintaining compatibility to utilize the R-series devices when replacing IPMs in older designs.

1.3 Definition of Type Name and Lot No.

Type name = 7MBP50RA-060-01 8101

7 MBP 50 R A -060- 01 8 1 01 Lot No.

Additional model number (if necessary) Additional number (01 to 99)
Voltage rating Month of production
Additional number of series 1: Jan
Series name 9: Sep.
Inverter IGBT current rating 0: Oct.
Indicates IGBT-IPM N: Nov.
Number of main elements D: Dec.
7 chip circuit with brake built-in Year of production
6 chip circuit without dynamic brake 8: 1998

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1.4 R-IPM Line Up

IGBT Current
Type Name Package VCES
Inverter Brake
7MBP50RA060 50A 30A
P610
7MBP75RA060 75A 50A
7MBP100RA060 100A 50A
P611 600V
7MBP150RA060 150A 50A
7MBP200RA060 200A 75A
P612
7MBP300RA060 300A 100A
6MBP50RA060 50A NO BRAKE
P610
6MBP75RA060 75A
6MBP100RA060 100A
P611 600V
6MBP150RA060 150A
6MBP200RA060 200A
P612
6MBP300RA060 300A
7MBP25RA120 P610 25A 15A
7MBP50RA120 50A 25A
P611
7MBP75RA120 1200V 75A 25A
7MBP100RA120 100A 50A
P612
7MBP150RA120 150A 50A
6MBP25RA120 P610 25A NO BRAKE
6MBP50RA120 50A
P611
6MBP75RA120 1200V 75A
6MBP100RA120 100A
P612
6MBP150RA120 150A

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Chapter 2 Explanation of Symbols/Terminology

2.1 Symbols in Block Diagram

Symbol Description
Vz The value of the Zener diode Vz that determines the signal H (off signal)
voltage of the control signal input terminal is specified in the electrical
characteristics of the spec sheet.
RALM Resistance to determine the primary current of opto-coupler for insulated
alarm output (ALM). About 10mA of current flows at Vcc=15V when an alarm
is output. The value of RALM is specified in the electrical characteristics of the
spec table.

2.1.1 Terminal symbols

Terminal Symbol Description

P Main power source Vd input terminal for the inverter bridge.
N P: + side, N: - side
Brake output terminal: terminal to connect the resistor for regenerative
B
operation declaration
U
V 3-phase inverter output terminal
W
(1) GND U Control power source Vcc input in the upper arm U phase
(3) Vcc U Vcc U: + side, GND U: - side
(4) GND V Control power source Vcc input in the upper arm V phase
(6) Vcc V Vcc V: + side, GND V: - side
(7) GND W Control power source Vcc input in the upper arm W phase
(9) Vcc W Vcc W : + side, GND W: - side
(10) GND Control power source Vcc input in the lower arm common
(11) Vcc Vcc: + side, GND: - side
(2) Vin U Control signal input in the upper arm U phase
(5) Vin V Control signal input in the upper arm V phase
(8) Vin W Control signal input in the upper arm W phase
(13) Vin X Control signal input in the lower arm X phase
(14) Vin Y Control signal input in the lower arm Y phase
(15) Vin Z Control signal input in the lower arm Z phase
(12) Vin DB Control signal input in the lower arm brake phase
(16) ALM Alarm signal ALM output when the protection circuits are operating

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2.2 Technical Terms and Definitions

Term Symbol Description and Explanation

Bus voltage VDC DC Voltage that can be applied between PN terminals
DC Bus voltage VDC Peak value of the surge voltage that can be applied between PN
(surge) (surge) terminals in switching
DC Bus voltage DC source voltage between PN terminals that can be protected from
VSC
(short circuit) short circuits/overcurrent
Collector-emitter Maximum collector-emitter voltage of the built-in IGBT chip and repeated
VCES
voltage peak reverse voltage of the FWD chip (only IGBT for the brake)
Reverse voltage VR Repeated peak reverse voltage of the FRD chip in the brake section
IC Maximum DC collector current for the IGBT chip
Collector current ICP Maximum DC pulse collector current for the IGBT chip
-IC Maximum DC forward current for the FWD chip
FRD forward
IF Maximum DC forward current for the FRD chip in the brake section
current
Collector power
PC Maximum power dissipation for one IGBT element
dissipation
Chip junction Maximum junction temperature of the IGBT and FWD chips during
Tj
temperature continuous operation
Control power
VCC Voltage that can be applied between GND and each Vcc terminal
source voltage
Input voltage Vin Voltage that can be applied between GND and each Vin terminal
Input current Iin Current can be flown between GND and each Vin terminal
Alarm signal
VALM Voltage that can be applied between GND and ALM terminal
voltage
Alarm signal
IALM Current that can be flown between GND and ALM terminal
current
Storage Range of ambient temperature for storage or transportation, when there
Tstg
temperature is no electrical load
Operating case Range of case temperature for electrical operation (Fig. 1 shows the
Top
temperature measuring point of the case temperature Tc)
Maximum effective value of the sine-wave voltage between the terminals
Isolating voltage Viso
and the heat sink, when all terminals are shorted simultaneously.
Collector-emitter Collector current when a specified voltage is applied between the
ICES
cutoff current collector and emitter of IGBT with all input signal H (=Vz)
Collector-emitter voltage at a specified collector current when the input
Collector-emitter
VCE (sat) signal of the only elements to be measured is L (=0V) and the all other
saturation voltage
input of elements are H (=Vz)
Diode forward Forward voltage at a specified forward current with all input signal H
VF
voltage (=Vz)
Power supply
Current between GND and each Vcc of the P side (upper arm side)
current of P-line ICCP
control power source
side pre-driver
Power supply
Current between GND and Vcc of the N side (lower arm side) control
current of N-line ICCN
power source
side pre-driver
Input signal Vinth (on) Control signal voltage when IGBT changes from OFF to ON
threshold voltage Vinth (off) Control signal voltage when IGBT changes from ON to OFF
Input zenor Clamp voltage between GND and each Vin when the control signal is
VZ
voltage OFF
Over heating
protection TCOH Case temperature at which the Tc overheat protection circuit operates
temperature level
Difference between TcOH and the case temperature at which the Tc
Hysteresis TCH
overheat protection is reset after lowering of Tc

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IGBT chips over
heating protection TjOH Junction temperature at which the Tj overheat protection circuit operates
temperature level
Difference between TjOH and the junction temperature at which the Tj
Hysteresis TjH
overheat protection is reset after lowering of Tj
Overcurrent
protective IOC IGBT collector current at which the overcurrent protection (OC) works
operation current
Overcurrent cut off
tDOC Shown in Fig. 2
time
Undervoltage
VUV Vcc at which the control source voltage lowering protection (UV) works
protection level
Difference between VUV and Vcc at which protection is reset with the rise
Hysteresis VH
of Vcc after UV operation
Period in which an alarm continues to be output (ALM) from the ALM
Signal hold time tALM
terminal after the N side protection function is actuated
Short circuit
protection delay tSC Shown in Fig. 3
time
Limiting resistor Built-in resistance limiting the primary current of opto-coupler for ALM
RALM
for alarm output
t on
t off
Switching time Shown in Fig. 4
tf
t rr
Chip-case thermal
Rth (j-c) Chip-case thermal resistance of IGBT or FWD
resistance
Chip-fin thermal Thermal resistance between the case and heat sink, when mounted on a
Rth (c-f)
resistance heat sink at the recommended torque using the thermal compound
Screw torque
Screw torque when mounting IPM onto a heat sink
mounting
Screw torque
Screw torque for electrical connection of the main terminal
terminal
Weight Weight of a IPM
IPM switching Range of the control signal frequencies for input into the control signal
f sw
frequency input terminal
Reverse recovery
Irr Shown in Fig. 4
current
Reverse bias safe Area of the current and voltage in which IGBT can be cutoff under
RBSOA
operation area specified conditions during turn-off
Eon IGBT switching loss during turn-on
Switching loss Eoff IGBT switching loss during turn-off
Err FWD switching loss during reverse recovery

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Fig. 1a Measuring point of Tc

1 4 ② 10 1①

P P610/ P611

N
W V U

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Fig. 1b Measuring point of Tc

1 4 ② 10 1①

P P

P612
B

N N
U V W

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Fig. 2 Overcurrent cut off time

tsc

Fig. 3 Short circuit protection delay time

9 %
9 %

Fig. 4 Switching time

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Chapter 3 Explanation of Functions

3.1 Built-in Electric Functions

- IGBT and FWD for 3-phase inverter

- IGBT and FRD for brake (Since 6MBP**RA060 contains no brake, the B terminal is not connected internally)
- Drive function of all IGBT (7MBP**RA060 contains also the drive function of a brake)
- Overcurrent (OC) protection function in all IGBT
- Short circuit (SC) protection function in all IGBT
- Undervoltage protection (UV) in drive circuits of all IGBT
- Chip overheating protection function (TjOH) of all IGBT
- Substrate temperature overheating protection function (TcOH) on the insulating substrate that mounts all
IGBT/FWD
- Alarm output function (ALM) to indicate the operation of protection when N-line side OC, SC, UV, TjOH, or TcOH
operates

3.2 Explanation of Functions

3.2.1 IGBT and FWD for 3-phase inverter

As shown in Fig. 5, IPM contains IGBT and FWD for 3-phase inverter and they are 3-phase connected inside the
IPM. Connecting the main power source to the P and N terminals and the 3-phase output lines to the U, V, and
W terminals completes main wiring.

Connect a Snubber circuit to suppress the surge voltage.

3.2.2 IGBT and FRD for brake

As shown in Fig. 5, IPM contains IGBT and FRD for brake and they are connected internally to the B terminal. By
controlling the brake IGBT through connection of the brake resistance to the B terminal, energy can be dissipated
while decelerating to suppress the rise of voltage between PN terminals.

3.2.3 Drive function of IGBT

The drive function of all IGBT is contained and has the following characteristics.

1) Soft switching
dv/dt of ON/OFF is controlled independently by the characteristics of drive elements without using a single gate
resistance (Rg).

2) Single power source drive without any negative bias

Since the cable between the drive circuit and IGBT is short and thus the wiring impedance is low, IPM can be
driven without negative bias.
The lower arm side has a common control GND and is driven by one power source. Four isolated sources are
required to drive the whole IPM.

3) Error ON prevention
Since a circuit is set up to ground the gate voltage with low impedance while OFF, error ON caused by the rise of
VGE due to noise can be prevented.

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3.2.4 Overcurrent protection function (OC)

Ioc level for a period of about 6 to 8 µs (tDOC), soft IGBT cutoff is performed. However, if the level falls below the
1) The overcurrent protection of IGBT is provided through detection of the collector current. If the Ic is exceeded

Ioc level in a period shorter than tDOC, or if the OFF signal is entered in the tDOC period, the OC protection function
does not work. Both OC and SC do not work while OFF.

2) The OC protection function is mounted on all IGBTs including the brake.

3) Small detection losses

The detection current that flows in the current sense IGBT contained in the IGBT chip is very small as compared
with Ic of the main IGBT. Therefore, it is possible to make detection loss smaller than that caused by the shunt
resistance.

4) Built-in latch to prevent malfunctioning (common also to UV and OH)

The whole OC protection function has a latch period of about 2ms, and even if the ON signal is entered during a
latch period, IGBT in which the protection is actuated does not operate.
Since the ALM of each phase is mutually connected in the lower side including the brake, all IGBTs on the arm
lower side stop for a latch period if the lower arm side performs protection operation.

5) Soft cutoff (common also to UV and OH)

Since soft IGBT cutoff occurs when the protection circuit operates, di/dt during cutoff is small and the surge
voltage can be suppressed low.

6) Operation delay time (period in which protection operation is not carried out)
Since the protection is actuated only if the Ic level is exceeded Ioc level continuously for a period of tDOC,
malfunctioning due to instantaneous overcurrent or noise is not caused.

3.2.5 Short circuit protection function (SC)

The SC protection function always cooperates with the OC protection function to suppress the peak current when
load or arm is shorted.

3.2.6 Undervoltage protection (UV)

The UV protection function carries out the soft IGBT cutoff if the control source voltage (Vcc) falls to VUV when the
input signal is ON.
Since the UV hysteresis is set, the alarm is canceled when Vcc returns to VUV + VH if the input signal is OFF.

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3.2.7 Case temperature overheating protection function (TcOH)
1) The TcOH protection function detects the insulating substrate temperature with the temperature detection
elements set up on the same ceramic substrate as that on which the power chips (IGBT and FWD) are set up.
The protection function is activated if the detected temperature exceeds the protection temperature level
continuously (TcOH) for a specified period of time (about 1ms).
If the input signal of the lower arm side IGBT is ON, the soft cutoff occurs and all IGBT on the lower arm side are
held off for a latch period of about 2ms.

2) OH hysteresis
The hysteresis TcH is set up also in TcOH to prevent chattering.
If the case temperature Tc falls below TcOH-TcH after latch period of about 2ms, the protection is released.

3) Protection operation delay time

To prevent malfunctioning due to noise, the OH protection function is actuated only if TcOH is exceeded
continuously for a period of about 1ms (tDOH).

3.2.8 Chip temperature overheating protection function (TjOH)

1) The TjOH protection function detects the IGBT chip temperature with the temperature detection elements set up
on all IGBT chips. The protection function is activated if the detection temperature exceeds the protection
temperature level continuously (TjOH) for a specified period of time (about 1ms).
If the input signal is ON, the soft IGBT cutoff occurs and IGBT stops for a latch period of 2ms.
If the TjOH protection of the lower arm is actuated, all IGBTs on the lower arm side stop for a latch period of 2ms.

2) OH hysteresis
The hysteresis TjH is set up also in TjOH to prevent chattering.
If the chip temperature Tj falls below TjOH-TjH after latch period of 2ms and the input signal is OFF, the protection
is released.

3) Protection operation delay time

To prevent malfunctioning due to noise, the OH protection function is only activated if TjOH is exceeded
continuously for a period of about 1ms (tDOH).

3.2.9 Alarm output function (ALM)

1) Alarms are output during latch period of each protection operation of the lower arm side OC, UV, TjOH, and
TcOH.
If Vin is ON even after the latch period passes, the protection and alarm are not reset.
In such a case, the protection and alarm are reset immediately after Vin changes to OFF.

2) Upper arm
No alarm is output when the protection operation (OC, UV, TjOH) is occurred in only the upper arm side.
If the input signal is OFF after the latch period of 2ms passes, the protection is released.

3) Alarm mutual connection of the lower arm

Since the alarm terminals of each drive on the lower arm side are connected mutually, all IGBT on the lower arm
side including DB stop during alarm output.
If the input signal is OFF after the latch period of 2ms passes, the protection is released.

3.2.10 IPM internal block diagram

Fig. 5 shows an IPM internal block diagram (with brake circuit).

Fig. 6 shows an IPM internal block diagram (without brake circuit).

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Fig. 5 IPM internal block diagram (with brake)

1.5kΩ
a

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Fig. 6 IPM internal block diagram (without brake)

1.5kΩ
a

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3.3 Timing Chart

The following figures show a timing chart of the protection function.

Undervoltage protection (UV) -1

(Timing Chart 1)

<5 <5

5 5

If Vcc is below VUV + VH during VCC is ON, an alarm is output.

If the period in which Vcc falls below VUV is shorter than 5µs, the protection does not work (while Vin is OFF)
An alarm is output when a period of about 5µs passes after Vcc falls below VUV if Vin is OFF, and IGBT
maintains OFF. (No alarm is output if only Vcc of the upper arm falls below VUV)
If Vcc returns to VUV + VH after tALM passes, UV is reset after tALM passes if Vin is OFF and the alarm is also
reset simultaneously.
If the period in which Vcc falls below VUV is shorter than 5µs, the protection does not work (while Vin is ON).
An alarm is output when a period of about 5µs passes after Vcc falls below VUV if Vin is ON and the soft
IGBT cutoff occurs. (No alarm is output if only Vcc of the upper arm falls below VUV).
If Vcc returns to VUV + VH after tALM passes, UV is reset after tALM passes if Vin is OFF and the alarm is also
reset simultaneously.
An alarm is output if Vcc falls below VUV during Vcc is OFF.

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Under voltage protection (UV) -2
(Timing Chart 2)

5 5

If Vcc is below VUV + VH during Vcc is ON, an alarm is output. (Until Vin changes to OFF)
If Vcc returns to VUV + VH after tALM passes, UV and the alarm are reset simultaneously with the return of
VUV + VH if Vin is OFF.
Even if Vcc returns to VUV + VH after tALM passes, UV is not reset after tALM passes if Vin is ON. UV and the
alarm are reset simultaneously with Vin OFF.
If Vin is ON during Vcc is OFF, the alarm is output, and the soft IGBT cutoff occurs while Vcc is below VUV.

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Overcurrent protection (OC)
(Timing Chart 3)

Ｉ ｃ

< <

An alarm is output and the soft IGBT cutoff occurs when tDOC passes after Ic rises above Ioc. No alarm is
output for the upper arm.
OC and the alarm are reset simultaneously if Vin is OFF when tALM passes.
An alarm is output and the soft IGBT cutoff occurs when tDOC passes after Ic rises above Ioc. No alarm is
output for the upper arm.
If Vin is ON when tALM passes, OC is not reset. OC and the alarm are reset simultaneously when Vin is
OFF.
If Vin changes to OFF before tDOC passes after Ic rises above Ioc, the protection function is not activated
and the normal IGBT cutoff occurs.
If Vin changes to OFF before tDOC passes after Ic rises above Ioc. The protection function is not activated
and the normal IGBT cutoff occurs.

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Short circuit protection (SC)
(Timing Chart 4)

Ｉ ｓｃ

Ｉ ｃ

< <

If the load shorts after Ic has started flowing and Ic exceeds Isc, the Ic peak is suppressed instantly. An
alarm is output and the soft IGBT cutoff occurs when tDOC passes. No alarm is output for the upper arm.
OC and the alarm are reset simultaneously if Vin is OFF when tALM passes.
If the load is shorted and Isc is exceeded simultaneously with the start of flow of Ic, the Ic peak is instantly
suppressed. An alarm is output and the soft IGBT cutoff occurs after tDOC passes. No alarm is output for
the upper arm.
If Vin is ON when tALM passes, OC is not reset. OC and the alarm are reset simultaneously when Vin is
OFF.
If load is shorted after Ic started to flow and Ic exceeds Isc, the Ic peak is suppressed instantly. Then, if Vin
changes to OFF before tDOC passes, the protection function is not activated and the normal IGBT cutoff
occurs.
If the load is shorted simultaneously with the start of flow of Ic and Ic exceeds Isc, the Ic peak is suppressed
instantly. Then, if Vin changes to OFF before tDOC passes, the protection function is not activated and the
normal IGBT cutoff occurs.

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Case temperature overheating protection (TcOH)
(Timing Chart 5)

An alarm is output if the case temperature Tc continuously exceeds TcOH for a period of about 1ms, and if
Vin is ON, the soft cutoff of all IGBT on the lower arm side occurs.
If Tc falls below TcOH-TcH before tALM passes, the alarm is reset when tALM passes.
If Tc exceeds continuously TcOH for a period of about 1ms, an alarm is output. (While Vin is OFF)
If Tc has not fallen below TcOH-TcH when tALM passes, the alarm is not reset. When Tc falls below TcOH-TcH
after tALM passes, the alarm is reset.

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IGBT chip overheating protection (TjOH)-1
(Timing Chart 6)

An alarm is output and the soft IGBT cutoff occurs if the IGBT chip temperature Tj continuously exceeds
TjOH for a period of about 1ms. No alarm is output for the upper arm.
If Tj falls below TjOH-TjH before tALM passes, OH and the alarm are simultaneously reset if Vin is OFF when
tALM passes.
An alarm is output if Tj continuously exceeds TjOH for a period of about 1ms, and if Vin is OFF, the
protection function is not activated. No alarm is output for the upper arm.
When Tj falls below TjOH-TjH after tALM passes, OH and the alarm are reset simultaneously if Vin is OFF.

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IGBT chip overheating protection (TjOH)-2
(Timing Chart 7)

<

< <

If Tj exceeds TjOH and then falls below TjOH within about 1ms, OH does not operate regardless of whether
Vin is ON or OFF.
If Tj exceeds TjOH and then falls below TjOH within about 1ms, OH does not operate regardless of whether
Vin is ON or OFF.
If Tj exceeds TjOH and then falls below TjOH for a period of about 3µs or longer, OH operates when the
period in which Tj exceeds TjOH passes about 1ms.

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Chapter 4 Examples of Application Circuits

4.1 The Entire Circuit

Fig. 7 shows an application circuit example (with brake type).
Ω
+

Ω
+

Ω
+

Ω
+

Ω
+

Ω
+

Ω
+

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Fig. 8 shows an application circuit example (no brake type).

Ω
+

Ω
+

Ω
+

Ω
+

Ω
+

Ω
+

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4.2 Precautions

4.2.1 Control power source

As shown in Fig. 7 and Fig. 8, four isolated control sources, upper arm side=3 and lower arm side=1, are
required.

If you use a standard power supply unit, do not connect the GND terminal on the power output.

If you connect the GND terminal to + or – of the output, a malfunction may result because each power source is
connected to the ground on the power source input.

Reduce the stray capacitance between each power source and the ground as much as possible.

4.2.2 Structural isolation among four power sources (input connectors and PC boards)
Isolation is needed between four power sources each and the main power source.
Since a large amount of dv/dt is applied to this isolation during IGBT switching, keep sufficient clearance between
the components and the isolation. (2mm or more is recommended)

4.2.3 GND connection

The control power source GND on the lower arm side and the main power source GND are connected inside the
IPM. Never connect them outside the IPM. If you connect them outside the IPM, loop currents generated inside
and outside IPM flow to the lower arm and cause malfunctioning of the opto-coupler and the IPM.
The input circuit of the IPM may also be damaged.

4.2.4 Control power source capacitor

Capacitors 10µF and 0.1µF connected to each control power source as shown in Fig. 7 and Fig. 8 are not
intended for smoothing the control power sources, but for compensating the wiring impedance up to the IPM.

Capacitors for smoothing are needed separately.

Since transient variations may be caused in the wiring impedance from the capacitor to the control circuit,
connect the capacitor as close to the IPM control terminal as possible.

As for the electrolytic capacitors, select those capacitors with lower impedance and better frequency
characteristics. In addition, connect capacitors with better frequency characteristics, such as film capacitors, in
parallel.

When capacitors are connected between input and GND terminals, pay attention to longer delay time after
signals inputted to primary side of opto-coupler.

4.2.5 Pull-up of the signal input terminal

Pull up the control signal input terminal to Vcc with a resistor of 20kΩ. Even if you do not use the brake in the
brake built-in IPM, pull up the DB input terminal also. If you do not pull up the terminals, a malfunction may be
caused by dv/dt.

4.2.6 Snubber
Connect the snubber to the PN terminals directly. For the P612 package set up the snubber for each PN terminal
on both sides.

4.2.7 B terminal
In the case of the 6 in 1 package (without brake) type, connecting the B terminal to the N or P terminal is
recommended. Avoid the use while the B terminal is floating.

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4.3 The Opto-couplers

4.3.1 Opto-coupler for control input

1) Opto-coupler rating
Use those photo-couplers that satisfy the following characteristics

- CMH=CML > 15kV/µs or 10kV/µs

- tpHL=tpLH < 0.8µs
- tpLH-tpHL = -0.4 to 0.9µs
- CTR > 15%

Example: Product of HP: HCPL-4504, HCPL-4506

Product of Toshiba: TLP759 (IGM)
Note: also the safety standards such as UL and VDE, should be applied.

2) Wiring between the opto-coupler and the IPM

Make the wiring between the opto-coupler and the IPM as short as possible to reduce the wiring impedance
between the opto-coupler and the IPM control terminal. Separate each wire between the primary and secondary
circuits so that floating capacitance to be small enough since a strong dv/dt is applied between the primary and
secondary circuits.

3) Light Emitting Diode driving circuit

The dv/dt withstand capability of the opto-coupler is also affected by the input light emitting diode driving circuit.
The driving circuit example is shown in Fig. 9.

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Fig. 9 Opto-coupler input circuit
1. Good example: Totem pole output IC
Current limiting resistor on the cathode side of the photo diode

2. Good example: Photo diode A-K is shorted by transistors C-E (example which is particularly fit for opto-coupler
OFF)

3. Bad example: Open collector

4. Bad example: Current limiting resistor on the anode side of the photo diode

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4.3.2 Opto-coupler for alarm output
1) Opto-coupler rating
Though you can use general-purpose opto-couplers, we recommend using the opto-couplers with the following
characteristics.

- 100% < CTR < 300%

- One-element packed type
Example) TLP521-1-GR rank
Note: Also the safety standards such as UL and VDE, should be applied.

2) Input current limiting resistor

The current limiting resistor of the light emitting diode in the opto-coupler input is contained in the IPM.
RALM=1.5kΩ and if connected directly to Vcc, about 10mA of IF flows with Vcc=15V.
Therefore, there is no need to connect any current limiting resistor.

However, if a large amount of current Iout > 10mA is needed on the opto-coupler output, increase the CTR value
of the opto-coupler to a required value.

3) Wiring between the opto-coupler and the IPM

Since a large amount of dv/dt is applied also on the photo-coupler for alarm, the same note as described in 4.3.1-
2) should be taken.

4.4 Connector
You can connect the control circuit to the R-IPM entirely by using one type of connectors.
The connector should be Au-plated electrode and 2.54mm of pitch. Recommended connector: Hirose Electric
MDF7-25S-2.54DSA

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Chapter 5 Cooling Design

5.1 Junction Temperature

To safeguard operation of the IGBT, make sure the junction temperature Tj does not exceed Tjmax. Cooling
should be designed in such a way that ensures that Tj is always below Tjmax even in abnormal states such as
overload operation as well as under rated load.

Operation of IGBT in temperatures higher than Tjmax could result in damage to the chips.
In the R-IPM, the TjOH protection operates when the chip temperature of IGBT exceeds Tjmax. However, if the
temperature rise is too quickly, the chip may not be protected.

Likewise, notice that the chip temperature of FWD should not exceed Tjmax.
For concrete designs, refer to the following material.

“IGBT MODULE N SERIES APPLICATION MANUAL REH982”

Contents: -Power dissipation loss calculation
-Selecting heat sinks
-Heat sink mounting precautions

5.2 Precautions for Heat Sink Selection

How to select heat sinks is described in the manual REH982. Note also the following point.

Flatness of the heat sink surface

Flatness between mounting screw pitches: 0 to +100µm, roughness: 10µm or less

If the heat sink surface is concave, a gap arises between the heat sink and the IPM, leading to deterioration of
cooling efficiency.

If the flatness is +100µm or more, the copper base of the IPM is deformed and cracks could be caused in the
internal isolating substrates.

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Chapter 6 Precautions Using R-IPM

6.1 Main Power Source Vd

6.1.1 The Voltage Range

There are four items of the IPM spec (VDC, VDC (surge), VSC, and VCES) to specify the voltage of the main power
source. (For their definitions, refer to Chapter 2. 2. Technical Terms and Definitions)
The following shows the voltage range of the main power source obtained from these four items.

- Variation range of the main source: 400V or less for the 600V series
800V or less for the 1200V series

- Brake operation range: 400V or less for the 600V series

800V or less for the 1200V series

- The protection operation range of the main power source of inverters is 400V or less for the 600V series, and
450V (=VDC) or less if the rise within the protection operation delay time is included (For the 1200V series, 800V
or less, and 900V or less respectively).

- The maximum surge voltage during switching is 500V (=VDC (SURGE)) or less for the 600V series and 1000V
or less for the 1200V series.

For all ranges above, mount snubber circuits as close to the PN terminals as possible so that these values or less
can be obtained.

- The surge voltage is caused in the wiring inductance inside the IPM by di/dt during switching. The circuits
structure and elements are designed in such a way that this maximum surge voltage is suppressed to 600V
(=VCES) or less for the 600V series (1200V or less for the 1200V series).

6.1.2 External noise

The IPM is protected internally against external noise. However, the possibility of malfunction cannot be totally
eliminated, depending on the type and intensity of noise.

Take sufficient counter measures against noise, which may adversely affect the IPM.

1) For noise from outside the equipment

Apply the noise filter on the AC line, or isolated ground.

The addition of capacitors of 1000pF or less between the signal input of all phases and signal GND

2) For noise inside the equipment

Before the rectifier: Apply the same counter measures as the above

After the rectifier: Apply snubber circuits on the PN line (in case of multiple converters connected to one rectifier
converter)

6.2 Control Power Source Vcc

6.2.1 The voltage range

The undervoltage protection function UV is available for Vcc. The following shows the range of voltage used.

1) 0V or less (applying the reverse voltage)

The control circuit is damaged. Never apply reverse voltage.

2) 0V to VUV + VH, VUV to 0V

The control circuit is not damaged, but does not operate. Since the off-bias of the IGBT gate is not sufficient
in this range, error ON of IGBT could be caused by dv/dt if the main power source is applied.
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 Apply the main power source after the voltage reaches 13.5V or higher.

3) VUV + VH to 13.5V, 13.5V to VUV

The control circuit operates. However, power loss increases due to the lack of drive voltage. Because the
protection characteristics are changed, the circuit may be damaged due to the insufficient protection.
Take care to avoid operation in this range.

4) 13.5V to 16.5V
Voltage range required for the IPM to operate normally. We recommend using the IPM at voltage of around
15V.

5) 16.5V to 20.0V
The control circuit can operate. However, because the protection characteristics are changed due to
excessive drive source voltage for IGBT and FWD, the circuit may be damaged depending on the load.

6) Over 20.0V
Take care to avoid operation in this range.
Never apply a Vcc of, 20V or more; the control circuit could be damaged.

6.2.2 Voltage ripple

13.5V to 16.5V shown in 6.2.1 includes the Vcc voltage ripple.

The protection of UV or OC may not operate as expected due to excess or lack of the drive voltage even if the
Vcc fluctuates in such a short period of time. When designing a control power source, make sure to verify that
the voltage ripple is suppressed sufficiently low. Also take care so that noise on the power source is suppressed
low.

6.2.3 Power source sequence

As shown in 6.2.1, apply the main power source after Vcc reaches the range of 13.5V to 16.5V. In the worst
case, if the main power source is applied before the control source voltage reaches a specified value, the IPM
may be damaged because the protection is not ready to operate.

6.2.4 Alarm during power source ON and OFF

An alarm is output if the voltage is below VUV + VH during power source ON. Alarm is reset if the voltage rises
above VUV + VH. However, if the ON signal is being entered, the alarm is not canceled, so it is necessary to take
appropriate action by shutting down the control circuit.

Likewise, an alarm is output during power source OFF, you need to take the above-mentioned appropriate action.

6.3 Protection Operation

6.3.1 Common in protection operation

1) Range of protection
The protection contained in the IPM is designed for non-repetitive abnormal phenomena.
Do not apply stress steadily that exceeds the maximum rating.

2) Countermeasures for alarm output

If an alarm is output, stop the input signal into the IPM immediately to stop the equipment. The protective
function of the IPM is reset automatically, and so the protection operation of the IPM alone cannot protect the IPM
and the equipment. Restart the device after removing the causes of the errors.

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6.3.2 Examples of OC operation due to load errors and precautions
1) Overload
If the IPM output current increases due to load motor abnormalities, the OC operates. The soft IGBT cutoff
occurs after tDOC passes. An alarm is output in case of the lower arm OC operation.

2) Load short circuit

If the motor or IPM output terminal is shorted, the Ic peak is suppressed instantly to prevent the flow of excessive
current. If the condition of the short circuit is not cleared in a period of tDOC, the soft IGBT cutoff occurs, and an
alarm is output, in case of the lower arm.

3) Starting with load short circuit

The OC has a delay time of about 10µs. If the input signal pulse width is shorter than this, the OC does not
operate. Therefore, if the input signal pulses of 10µs or less are continuing when starting with load shorted, short
circuits occur continuously and the chip temperature of IGBT rises rapidly. In such a case, TcOH is not
appropriate because the rise of case temperature is delayed. When the chip temperature exceeds Tjmax, TjOH
operates to protect the chip from overheating.

However, because TjOH is also delayed by about 1ms, if the temperature rises rapidly the activation of the
protection function may be too late to prevent the chip from being damaged.

By setting the pulse width of the initial input signal during startup to 10µs or more, overcurrent due to short
circuits can reliably be detected and errors can be detected by alarm output by the OC protection operation.

4) Arm short circuit

If the ON signal is entered simultaneously for the upper and lower arms, IGBT of the upper and lower arms are
turned ON simultaneously, resulting in an arm short circuit. If this occurs, the Ic peak is immediately suppressed.
After tDOC passes, the soft IGBT cutoff occurs and an alarm is output.

5) Ground short
If ground short is caused due to insulation abnormalities of the motor and an overcurrent flows to the lower arm,
the soft IGBT cutoff occurs and an alarm is output.

If the overcurrent flows to the upper arm, the soft IGBT cutoff occurs but no alarm is output. The state of self-
cutoff is maintained for about 2ms. If the input signal is not stopped, the protected state is released after 2ms.
Since the AC input phase is generally inverted after 10ms, short circuit currents flow to the lower arm, and at this
time an alarm is output.

6.3.3 Alarm on the upper arm side

No alarm is output from the upper arm side.

The OC, SC, and UV are set up for all IGBT including the brake and have the latch period of 2ms.

The alarm output is designed for one system on the lower arm side and is not designed for the upper arm side.

As a result, no alarm is output if the protection function operates only on the upper arm side.

However, the upper-phase current lacks during latch period of 2ms, and when the phase moves to the lower
phase, an overcurrent flows to the lower arm and then an alarm is output by the OC operation.

6.3.4 Overcurrent of FWD

The OC and SC detect the collector current for their operation, but do not detect the anode current of FWD.
Therefore, the protection function is not activated when abnormal currents flow only in FWD.

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6.3.5 Temperature detection location for the case temperature protection (TcOH)
The temperature detection device for the case temperature protection is located on the ceramic substrate on
which power chips are mounted. The location of the temperature detection device on the substrate is near the
lower arm X phase IGBT and at one edge of the substrate. TcOH is designed to protect the IPM when the
temperature of the whole substrate rises. When overheating is concentrated on one main device, the chip
temperature protection TjOH in 6.3.6 is employed.

6.3.6 Chip temperature protection (TjOH)

If the current flows concentrated on one or two IGBTs, such as motor lock mode, the chip temperature rises
rapidly and the case temperature protection function is not appropriate. In this case, the chip is protected from
thermal damage by the temperature detection elements installed in the IGBT chip.

The chip temperature protection function is installed in all IGBT including the brake.

6.4 Reliability

6.4.1 Power cycling capability

Lifetime of semiconductor product is not permanent. Accumulated fatigue by thermal stress resulting from rising
and falling temperatures generated within the device may shorten the lifetime of the components. Narrow the
width of temperature variations as much as possible.

6.4.2 Reliability test items

Item Referenced standard Method/Condition

Thermal shock JIS C7021 A-3 0/100oC, 5min each, 10 cycles
Temperature cycle JIS C7021 A-4 –40/RT/125oC, 60/30/60min, 100 cycles
Shock JIS C7021 A-7 1000G, 0.5ms, XYZ each 3 times
Vibration JIS C7021 A-10 10G, 10 to 500Hz, 15min, XYZ each 6h
10N to the direction perpendicular to the
Terminal tensile strength JIS C7021 A-11
control terminal
Tightening strength EIAJ ED-4701 A112 Method 2 (Screw torque test), 3.5Nm
Intermittent operation JIS C7021 B-6 Rated Pc, 2s/18s (ON/OFF), 3000 cycles
High temperature reverse bias JIS C7021 B-8 125oC, VDCX0.8, 1000h
High temperature storage JIS C7021 B-10 125oC, 1000h
o
Low temperature storage JIS C7021 B-12 -40 C, 1000h
Humid storage JIS C7021 B-11 85oC, 85%, 1000h
Pressure cooker EIAJ ED-4701 B-123 2atm, 121oC, 100%, 20h

6.5 Others

6.5.1 Precautions for storage/transportation

o
1) Store the IPM at room temperature of 5 to 35 C and humidity level of 45 to 75%.

2) Avoid rapid temperature and humidity changes. In particular, do not allow condensation on the IPM surface.

3) Avoid locations where corrosive gases are generated or dust is present.

4) Take care so that no load is placed on the IPM. Particularly, the control terminal should not be bent.

5) Store IPM with unprocessed terminals, and with no load on them.

6) Do not drop or subject an IPM to shock during transportation.

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6.5.2 Precautions for usage and installation into equipment
1) Do not drop an IPM or subject it to shock during installation into devices, transportation, or driving.

2) Take care so that no load is placed on the IPM. Particularly, the control terminal should not be bent.

3) Do not perform soldering by re-flow on the main terminal and control terminal. Take care to prevent any
influence to the IPM by heat, flux, and washing solutions used for soldering other components.

4) Avoid rapid temperature and humidity changes. In particular, do not allow condensation on the IPM surface.

5) Avoid locations where corrosive gases are generated or dust is present.

6) IGBT and IC contained in the IPM are easily destroyed by static electricity.
Take care to prevent high voltage static electricity to the main terminal and control terminal.

7) Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the
equipment from causing secondary destruction.

8) When using the IPM in your equipment, you are requested to take adequate safety counter measures to
prevent the equipment from causing a physical injury, fire, or other problem if any of the IPM becomes faulty. It is
recommended to make your design fail-safe, flame retardant, and free of malfunction.

9) All applications described in this manual exemplify the use of the IPM for reference only. No right or license,
either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by
Fuji Electric Co., Ltd. is granted.

10) If you need to use the IPM for equipment requiring higher reliability than normal, such as for the equipment
listed below, it is imperative to contact Fuji Electric to obtain prior approval.
- Transportation equipment (mounted on cars and ships)
- Space equipment
- Medical equipment
- Nuclear control equipment
- Submarine repeater equipment

11) If you have any question about any portion in this manual, ask to Fuji Electric before using the IPM.

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