MODULE-1 - Power Electronic Devices

 List various devices -Symbols(MOSFET,IGBT,GTO,LASCR,SCS,UJT, DIAC,

TRIAC and SCR)
 MOSFET- list different types -structure and working of N-channel enhancement type
 IGBT--structure-working principle - applications
 UJT- schematic diagram and working
 DIAC & TRIAC-schematic diagram- working- V/I characteristics.

MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

IGBT (Insulated Gate Bipolar Transistor)

GTO ( Gate Turn Off Thyristor)

LASCR(Light Activated SCR)

SCS(Silicon Controlled Switch)

UJT

DIAC(Diode for Alternating Current)

TRIAC(Triode for Alternating Current)

MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Three terminals-
 Drain
 Source
 Gate
Unipolar device - In the ON-state, the MOSFET can allow current in only one direction
(from drain to source for n channel MOSFET and source to drain for p-channel MOSFET)

Voltage controlled device - The flow of current from the drain to the source is controlled
by the voltage applied between the gate-source terminals. Thus the MOSFET is a voltage
controlled device.

MOSFET -Classification
 WORKING of IGBT
The collector-emitter is connected to Vcc such that the collector is kept at a positive
voltage than the emitter.
 The junction j1 becomes forward biased and j2 becomes reverse biased.
At this point, there is no voltage at the gate.
 Due to reverse j2, the IGBT remains switched off and no current will flow between
collector and emitter.
Applying a gate voltage VG positive than the emitter
 negative charges will accumulate right beneath the SiO2- layer due to capacitance.
 Increasing the VG increases the number of charges which eventually form a layer of
charge carriers, in the upper P-region.
 This layer form N-channel that shorts N- drift region and N+ region.
 The electrons from the emitter flow from N+ region into N- drift region.
 While the holes from the collector are injected from the P+ region into the N- drift region.
 Due to the excess of both electrons and holes in the drift region, its conductivity increase
and starts the conduction of current.
Hence the IGBT switches ON.

Applications of IGBT
1. It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical
equipment and computers.
2. It is used in UPS (Uninterruptible Power Supply) system.
3. It is used in AC and DC motor drives offering speed control.
4. It is used in chopper and inverters.
5. It is used in solar inverters.
6. It is used in HVDC power
7. Electric trains
8. Robotics
 DIAC
 DIAC is given bythe symbol of two Diodes connected in parallel and opposite to one another
• Since the DIAC is bidirectional, we can't name those terminals as anode and cathode, the
terminals of DIAC are simply called MT1 and MT2 where MT stands for Main terminals.

WORKING
 Consider the MT1 terminal to be positive, then the P1 layer near MT1 will be activated, so the
conduction will be taking place in the order of P1-N2-P2-N3.
• When the current is flowing from MT1 to MT2 the junction between P1-N2 and P2-N3 are Forward
Biased and the junction between N2- P2 isreverse biased.
• When the reverse voltage exceeds break over voltage (VBO), avalanche breakdown happens in
reverse biased junction and conduction is occurs.
• Similarly, if we consider MT2 terminal to be positive, then the P2 layer near MT2 will be activated
and the conduction will be taking place in the order of P2-N2-P1-N1.
• The current will be flowing from MT2 to MT1 and the junctions between P2-N2 and P1-N1 are
forward biased and the junction Between N2- P1 isreverse biased.
  When the reverse voltage exceeds break over voltage (VBO), avalanche breakdown happens in
reverse biased junction and conduction is occurs.
• Hence the conduction will be possible in both directions.

VI characteristics ofDIAC
 Initially, the resistance of the DIAC will be higher because of the Reverse Bias junction between
the layers.
 So, there will be small leakage current flowing through the DIAC, it is mentioned as the blocking
state in the curve.
• Once the applied voltage reaches the breakdown voltage the resistance of the DIAC drops abruptly
and then it starts conducting which leads to a sharp decrease in voltage and the current starts
increasing, which is mentioned as a conduction state in the curve.

TRIAC
 TRIAC: Triode for alternating current
 Bi directional thyristor
 Used for controlling ac power
 Equivalent to two thyristor connected in anti-parallel

Gate

Working

4 Modes of operation
Mode 1 : MT2 is positive wrt MT1and gate is positive wrt MT1
Mode 2: MT2 is positive wrt MT1and gate is negative wrt MT1
Mode 3: MT2 is negative wrt MT1and gate is positive wrt MT1
Mode 3: MT2 is negative wrt MT1and gate is negative wrt MT1
Mode 1 :MT2= +ve, Gate= +ve
• In this mode, the applied voltage at MT2 is positive with respect to MT1, the current will flow in the
path of P1-N1-P2-N2.
• During this operation, the junction between the layers P1-N1 and P2-N2 are forward biased but N1-
P2 isreverse biased.
•When a positive signal is applied to the gate,the junction N1-P2 occurs breakdown and device turns on.
• Charge carriersinjected from P2 to N2 and current flows from MT2 to MT1.
Mode 2 : MT2= +ve, Gate= -ve
• In this mode, the applied voltage is the same i.e. MT2 is positive with respect to MT1, the current will
flow in the same path of P1- N1-P2-N2.
• During this operation, the junction between the layers P1-N1 and P2-N2 are forward biased but N1-
P2 isreverse biased.
•When a negative signal is applied to the gate,the junction N1-P2 occurs breakdown and device turns
on.
• Here charge carriers injected from P2 to N4 and current flows from MT2 to MT1.
Mode 3 : MT1= +ve, Gate= -ve
• In this mode, the applied voltage polarities are swapped i.e. MT1 is positive with respect to MT2, the
current will flow in the path of P2-N1-P1-N3.
• During this operation, the junction between the layers P2-N1 and P1-N3 are forward biased but N1-
P1 isreverse biased.
• When a negative signal is applied to the gate, the junction N1-P1 occurs breakdown and device turns
on.
 Here charge carriers injected from P2 to N4 and current flows from MT1 to MT2

Mode 4 : MT1= +ve, Gate= +ve

•When MT1 is +ve with respect to MT2, the current will flow in the same path of P2-N1-P1-N3.
• During this operation, the junction between the layers P2-N1 and P1-N3 are forward biased but N1-
P1 isreverse biased.
• When a positive signal is applied to the gate, the junction N1-P1 occurs breakdown and device turns
on.
• Here chargecarriersinjected from P2 to N2 and current flows from MT1 to MT2

VI characteristics of TRIAC

T1 T2

 When MT2 is positive wrt MT1 thyristor T1 is Forward biased and it will conduct after
the applied voltage increases above forward breakover voltage
 As the gate pulse increases, forward breakover voltage decreases similar to a SCR
 When MT1 is positive wrt MT1 Thyristor T2 is forward biased and it will conduct
when applied voltage increases above breakover voltage, but in opposite direction
 As the gate pulse increases, forward breakover voltage decreases similar to a SCR