Dr Eslam Samy

EEC 102
MOSFET transistor

20220242
‫مجمود شريف عبد المؤمن‬
 MOSFET circuits

❖INTRODUCTION
• MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
circuits refer to electronic circuits that utilize MOSFET
transistors as their primary active components. MOSFETs are
widely used in electronic circuits due to their excellent
characteristics such as high speed, low power consumption,
and the ability to control electric current effectively.
• In MOSFET circuits, MOSFET transistors are employed in
various configurations to perform different functions, such as
amplification, switching, regulation, and power conversion.
These circuits can be found in a wide range of electronic
devices and systems, including amplifiers, voltage regulators,
DC-DC converters, audio systems, digital logic circuits, and
more.
• MOSFET circuits are essential in modern electronics because
they offer advantages like high efficiency, fast switching
speeds, and compatibility with integrated circuit fabrication
processes. They play a crucial role in shaping the functionality
and performance of electronic devices across various
industries, from consumer electronics to telecommunications,
automotive, aerospace, and beyond.
• BJT (Bipolar Junction Transistor) and FET (Field-Effect
Transistor) are two common types of transistors used in
electronic circuits. Here are some key differences between
them:
 ❖Difference between BJT and field effect
transistor (FET)

1. Structure and Operation:

BJT: It consists of three semiconductor regions: the emitter, the
base, and the collector. The flow of current through the
transistor is controlled by the injection of minority carriers
(electrons or holes) from the emitter to the base region, which
then controls the majority carrier flow from the collector to the
emitter.
FET: It has a different structure comprising three terminals: the
source, the gate, and the drain. The current flow between the
source and drain terminals is controlled by the electric field
applied to the gate terminal. There are two main types of FETs:
MOSFETs (Metal-Oxide-Semiconductor FETs) and JFETs
(Junction FETs), with MOSFETs being the most commonly used
type.
2. Voltage vs. Current Control:
BJT: It is a current-controlled device. The base current controls
the collector-emitter current.
FET: It is a voltage-controlled device. The gate-source voltage
controls the drain-source current.
3. Input Impedance:
BJT: Typically, the input impedance of a BJT is lower compared
to that of a FET.
 FET: FETs usually have a higher input impedance, making them
more suitable for applications where high input impedance is
required, such as in amplifiers.
4. Switching Speed:
BJT: BJTs generally have slower switching speeds compared to
FETs.
FET: FETs offer faster switching speeds, especially MOSFETs,
which make them suitable for high-frequency applications.
5. Temperature Sensitivity:
BJT: BJTs are more sensitive to temperature variations
compared to FETs.
FET: FETs generally exhibit better temperature stability.
6. Applications:
BJT: BJTs are commonly used in analog circuits such as
amplifiers and audio circuits.
FET: FETs, particularly MOSFETs, are widely used in digital
circuits, power electronics, and integrated circuits.

❖Construction of n-channel Junction Field

Effect Transistor (JFET)
• The n-channel Junction Field Effect Transistor (JFET) is a type of
FET that utilizes an n-type semiconductor channel with a p-n
junction on either side. The basic construction of an n-channel
JFET consists of a source and drain terminal made of heavily
doped n-type semiconductor material, with a lightly doped p-
 type semiconductor material sandwiched in between. This p-
type region forms the channel through which current flows
from the source to the drain.
• A thin layer of insulating material, such as silicon dioxide (SiO2),
is deposited on top of the p-type channel. On top of this
insulating layer, a gate terminal made of metal or heavily
doped semiconductor material is added. The gate is reverse-
biased with respect to the channel, creating a depletion region
that extends into the channel from both sides. This depletion
region effectively narrows the conductive channel, controlling
the flow of current between the source and drain.
• The key aspect of the JFET construction is the use of a reverse-
biased p-n junction as the gate, which allows the device to
operate without the need for an additional insulating layer, as
is the case with Metal-Oxide-Semiconductor Field-Effect
Transistors (MOSFETs). This simplifies the fabrication process
and allows JFETs to have a more rugged construction compared
to MOSFETs, making them suitable for high-power and high-
temperature applications

❖Operation of n-channel JFET

• The operation of an n-channel Junction Field Effect Transistor
(JFET) is based on the principle of controlling the flow of
current through the semiconductor channel by applying a
voltage to the gate terminal. In an nchannel JFET, the channel is
made of a lightly doped n-type semiconductor material, while
the gate is a reverse-biased p-n junction formed by a p-type
semiconductor material on either side of the channel .
• When no voltage is applied to the gate, the channel is fully
open, and current can freely flow from the source to the drain,
known as the "on" state. As a positive voltage is applied to the
gate, relative to the source, a reverse-bias is created across the
p-n junctions on either side of the channel. This reverse-bias
causes the depletion regions in the p-type regions to expand,
effectively narrowing the conductive channel. As the gate
voltage is increased, the depletion regions continue to grow,
further constricting the channel and reducing the flow of
current between the source and drain
• At a certain gate voltage, known as the pinch-off voltage, the
depletion regions meet in the center of the channel, completely
cutting off the flow of current, and the JFET enters the "off"
state. This ability to control the channel conduction by varying
the gate voltage is the fundamental operating principle of the
JFET, and it allows the device to be used as an amplifier, switch,
or voltage-controlled resistor in various electronic circuits

❖I-V (input and output) characteristic curve

• The input-output (I-V) characteristics of a Junction Field Effect

Transistor (JFET) describe the relationship between the voltage
applied to the gate terminal and the current flowing between
the source and drain terminals. These characteristics provide
crucial insights into the operating behavior and performance of
the JFET device.
• The JFET I-V characteristics can be divided into two main
regions: the ohmic (or linear) region and the saturation region.
In the ohmic region, the drainsource current (ID) increases
linearly with the drain-source voltage (VDS) as the gate-source
 voltage (VGS) is held constant. As VDS increases, the depletion
region around the gate-channel junction expands, constricting
the channel and reducing the effective cross-sectional area for
current flow.
• In the saturation region, further increases in VDS cause the
depletion region to extend across the entire channel,
effectively "pinching off" the current flow. The drain current
then remains relatively constant, even as VDS is increased,
forming a flat plateau in the I-V curve. The gate voltage (VGS)
controls the pinch-off voltage and the maximum drain current
that can be achieved in the saturation region.

❖ Difference between JFET and MOSFET

1. Construction and Operation

The key difference between Junction Field Effect Transistors
(JFETs) and Metal-Oxide Semiconductor Field Effect
Transistors (MOSFETs) lies in their fundamental construction
and operating principles. JFETs use a reverse-biased p-n
junction as the gate, which controls the flow of current
through a semiconductor channel. In contrast, MOSFETs
have a metal-oxide-semiconductor structure, where an
electric field created by the gate voltage controls the current
flow in the channel.
2. Input Impedance
One of the primary advantages of JFETs is their extremely
high input impedance, typically in the range of millions of
ohms. This makes them well suited for high impedance low
current applications where minimal loading on the input
signal is required. MOSFETs also have a high input
 impedance, but it is generally lower than that of JFETs,
making them more suitable for driving lower impedance
loads. Power Consumption MOSFETs are generally more
power efficient than JFETs, particularly in switching and
digital applications. This is because MOSFETs only require a
voltage to be applied to the gate to control the current
flow, while JFETs require a small but continuous gate current
to maintain their on-state. The lower power consumption of
MOSFETs makes them preferred in portable, battery
powered, and energy efficient electronic devices.
3. Reliability and Temperature Performance
JFETs are generally more rugged and reliable than MOSFETs,
especially in high-power and high-temperature applications.
This is due to the simpler construction of JFETs, which do not
require a thin gate oxide layer like MOSFETs. However,
MOSFETs have a wider range of operating temperatures and
are less susceptible to radiation-induced damage, making
them more suitable for harsh environments and specialized
applications

❖ Applications for using MOSFET circuits

1. Digital Logic Circuits

MOSFETs are the building blocks of modern digital logic
circuits, such as those found in microprocessors, memory
chips, and other digital devices. Their ability to act as high-
speed, low-power switches makes them ideal for
implementing logic gates, flip-flops, and other digital
components that form the core of digital electronics.
2. Power Electronics
MOSFETs are extensively used in power
electronics applications, including power
supplies, motor drives, and power converters.
Their voltage-controlled operation and high
power-handling capability make them wellsuited for
efficiently controlling and regulating
the flow of high-power electrical signals in these
types of circuits.
3. Radio Frequency (RF) Circuits
The high-frequency switching capabilities of MOSFETs make
them useful in Radio Frequency (RF) and microwave circuits,
such as amplifiers, mixers, and switches. Their low noise and
high input impedance allow for efficient signal processing at
high frequencies, enabling their use in wireless
communication systems and radar applications.
4. Analog Amplifiers
MOSFETs can be used to build high performance analog
amplifiers, such as operational amplifiers, audio amplifiers,
and instrumentation amplifiers. Their voltage-controlled
nature and high input impedance make them ideal for
applications that require low noise, high gain, and minima
loading on the input signal