T6N12A thru T6N51A

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Surface-Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Low-profile package - typical height of 0.88 mm
• Leadless DFN package with side-wettable
flanks suitable for customer AOI (Automatic
Optical Inspection)
• Ideal for automated placement
• Junction passivation optimized design
K
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability and
DFN3820A automotive requirement
• Unidirectional
• Excellent clamping capability
Cathode Anode • Peak pulse power: 600 W (10/1000 μs)
• Meets MSL level 1, per J-STD-020, LF maximum peak
LINKS TO ADDITIONAL RESOURCES of 260 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHM3
EDA / CAD Related Packages Marking Application
Documents Notes
• Compatible to SMP (DO-220AA) package case outline
• Material categorization: for definitions of compliance
PRIMARY CHARACTERISTICS please see www.vishay.com/doc?99912
VBR 12 V to 51 V
VWM 10.2 V to 43.6 V
TYPICAL APPLICATIONS
PPPM (10 x 1000 μs) 600 W Use in sensitive electronics protection against voltage
TJ max. 185 °C
transients induced by inductive load switching and lightning
on ICs, MOSFET, signal lines of sensor units for automotive.
Polarity Unidirectional
Package DFN3820A MECHANICAL DATA
Circuit configuration Single
Case: DFN3820A
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end, heatsink is
anode

MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1) PPPM 600 W
Peak pulse current with a 10/1000 μs waveform (fig. 3) (1) IPPM See table next page A
Operating junction and storage temperature range TJ, TSTG -65 to +185 °C
Note
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A

Revision: 10-Nov-2023 1 Document Number: 98432

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ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

MAXIMUM
MAXIMUM MAXIMUM MAXIMUM TYPICAL
STAND- REVERSE
BREAKDOWN TEST REVERSE PEAK PULSE CLAMPING TEMP.
DEVICE OFF LEAKAGE
DEVICE VOLTAGE CURRENT LEAKAGE SURGE VOLTAGE COEFFICIENT
MARKING VOLTAGE AT VWM
TYPE
CODE VBR (1) AT IT IT AT VWM CURRENT AT IPPM OF VBR (3)
VWM TJ = 150 °C
(V) (mA) IR IPPM (2) VC αT
(V) ID
(μA) (A) (V) (%/°C)
MIN. NOM. MAX. (μA)
T6N12A ABP 11.4 12.0 12.6 1.0 10.2 2.0 6.0 35.9 16.7 0.070
T6N13A ABQ 12.4 13.0 13.7 1.0 11.1 2.0 5.0 33.0 18.2 0.072
T6N15A ABR 14.3 15.0 15.8 1.0 12.8 1.0 5.0 28.3 21.2 0.076
T6N16A ABS 15.2 16.0 16.8 1.0 13.6 1.0 5.0 26.7 22.5 0.078
T6N18A ABT 17.1 18.0 18.9 1.0 15.3 1.0 5.0 23.5 25.5 0.080
T6N20A ABV 19.0 20.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7 0.082
T6N22A ABW 20.9 22.0 23.1 1.0 18.8 1.0 5.0 19.6 30.6 0.084
T6N24A ABY 22.8 24.0 25.2 1.0 20.5 1.0 5.0 18.1 33.2 0.085
T6N27A ABZ 25.7 27.0 28.4 1.0 23.1 1.0 5.0 16.0 37.5 0.087
T6N30A ACF 28.5 30.0 31.5 1.0 25.6 1.0 5.0 14.5 41.4 0.088
T6N33A ACG 31.4 33.0 34.7 1.0 28.2 1.0 5.0 13.1 45.7 0.089
T6N36A ACH 34.2 36.0 37.8 1.0 30.8 1.0 5.0 12.0 49.9 0.090
T6N39A ACL 37.1 39.0 41.0 1.0 33.3 1.0 5.0 11.1 53.9 0.091
T6N43A ACM 40.9 43.0 45.2 1.0 36.8 1.0 5.0 10.1 59.3 0.092
T6N47A ACN 44.7 47.0 49.4 1.0 40.2 1.0 10.0 9.3 64.8 0.092
T6N51A ACP 48.5 51.0 53.6 1.0 43.6 1.0 10.0 8.6 70.1 0.093
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derated per fig. 2

BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
(3) To calculate V
(4) All terms and symbols are consistent with ANSI/IEEE C62.35

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL TYP. MAX. UNIT
RθJA (1) 140 175 °C/W
Thermal resistance
RθJM (2) 5 6.5 °C/W
Notes
(1) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz. standard footprint
(2) Thermal resistance junction-to-mount to follow JEDEC® 51-14 using transient dual interface test method (TDIM)

IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS

(TA = 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL VALUE
Contact discharge 30 kV
IEC 61000-4-2 C = 150 pF, R = 330 Ω ESD
Air discharge 30 kV

Revision: 10-Nov-2023 2 Document Number: 98432

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ORDERING INFORMATION TABLE

Device code T 6 N xxx A H M3

1 2 3 4 5 6 7

1 - Vishay PAR® TVS product

2 - Peak pulse power rating (6 = 600 W)
3 - Package type (N = DFN package)
4 - Nominal breakdown voltage
5 - Breakdown voltage tolerance and polarity (A ± 5 %, unidirectional)
6 - Quality grade (H = AEC-Q101 qualified, otherwise = industry grade)
7 - Material / Environment category (M3 = halogen-free,
RoHS-compliant, and termination lead (Pb)-free)

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
T6N12AHM3/H (1) 0.023 H 3500 7" diameter plastic tape and reel
T6N12AHM3/I (1) 0.023 I 14 000 13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

Revision: 10-Nov-2023 3 Document Number: 98432

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RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

10 10000 10 000 10000
PPPM - Peak Pulse Power (kW)

CJ - Junction Capacitance (pF)

Measured at zero bias
1000 1000 1000

2nd line

2nd line
1st line

1st line
2nd line

2nd line
1

Measured at stand-off
100 100 voltage, VWM 100

TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1 10 10 10
10 100 1000 10 000 10 20 30 40 50 60
td - Pulse Width (µs) VBR - Breakdown Voltage (V)

Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance

Axis Title Axis Title

100 10000 1000 10000
Peak Pulse Power (PPP) or Current (IPP)

Transient Thermal Impedance (°C/W)

RthJA junction to ambient
Derating in Percentage (%)

75 100
1000 1000

2nd line
2nd line
1st line

1st line
2nd line

50 10

100 RthJM junction to mount

100
25 1

0 10 0.1 10
0 25 50 75 100 125 150 175 200 0.001 0.01 0.1 1 10 100 1000
TJ - Initial Temperature (°C) tp - Pulse Duration (s)

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance

Axis Title
150 10000
tr = 10 µs TJ = 25 °C
Pulse width (td) is defined
IPPM - Peak Pulse Current, % IRSM

as the point where the peak

current decays to 50 % of IPPM

100 1000
Peak value IPPM
2nd line
1st line
2nd line

Half value IPPM - IPPM/2

50 100
10/1000 µs waveform

td
0 10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
tp - Time (ms)

Fig. 3 - Pulse Waveform

Note
• Fig. 1, power calculations is based on IPPM times defined maximum clamping voltage by pulse width

Revision: 10-Nov-2023 4 Document Number: 98432

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DFN3820A
0.006 (0.15)

0.086 (2.18)
0.078 (1.98)

0.156 (3.95) 0.039 (0.98)

0.148 (3.75) 0.031 (0.79)

Mounting Pad Layout

0.031 (0.80) ref.
0.076 (1.93) 0.076 (1.93) 0.087 (2.20)
0.068 (1.73)

0.051 (1.30) 0.034 (0.86) 0.051 (1.30) 0.034 (0.86)

0.043 (1.10) 0.026 (0.66)

0.014 (0.35) ref. 0.100 (2.55) 0.028 (0.70)

0.100 (2.55) 0.028 (0.70)
0.093 (2.35) 0.020 (0.50)
0.156 (3.96)

Revision: 10-Nov-2023 5 Document Number: 98432

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