Dsa 00716331
Dsa 00716331
Dsa 00716331
Bi-CMOS IC
LV4924VH Class-D Audio power Amplifier
Power cell BTL 10W×2ch
Overview
The LV4924VH is a 2-channel full-bridge driver for digital power amplifiers. It requires a PWM modulator IC in the
previous stage. This IC is a power cell that takes in PWM signals as an input and is used to form a digital amplifier system
for TVs, amusement equipment, and other such systems.
Features
• BTL output, class D amplifier system
• High-efficiency class D amplifier
• Muting function reduces impulse noise at power on / off
• Protection circuits incorporated for over-current, thermal, supply voltage drop, output offset detector
• Built-in bootstrap diodes
Specification
• Output 15W (VD=16V, RL=8Ω, fIN=1kHz, AES17, THD+N=10%)
• Output 10W (VD=13V, RL=8Ω, fIN=1kHz, AES17, THD+N=10%)
• Efficiency : 89% (VD=13V, RL=8Ω, fIN=1kHz, PO=10W)
• THD+N : 0.1% (VD=13V, RL=8Ω, fIN=1kHz, PO=1W, Filter: AES17)
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system,
safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any
guarantee thereof. If you should intend to use our products for new introduction or other application different
from current conditions on the usage of automotive device, communication device, office equipment, industrial
equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the
intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely
responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Electrical Characteristics Ta=25°C, VD=13V, RL=8Ω, L=22μH (TOKO: A7040HN-220M), C=0.33μF (Matsuo: 553M6302-334K)
Ratings
Parameter Symbol Conditions Unit
min typ max
Quiescent current ICCO STBY=H, MUTE=H, fIN=384kHz, Duty=50% 30 38 45 mA
Current at MUTE Imute STBY=H, MUTE=L, VIN=GND 2 4 6 mA
Standby current Ist STBY=L, MUTE=L, VIN=GND - - 10 μA
H input voltage VIH PWM_A, PWM_B, STBY, MUTE 2.3 - 5.5 V
L input voltage VI L PWM_A, PWM_B, STBY, MUTE 0 - 1.0 V
H input current I IH VIN=5V - - 60 μA
L input current IIL VIN=GND -20 - - μA
NPN Open collector output
Output pin leakage current IOFF - - 1 μA
OFF-stage 5.0V pull-up
NPN Open collector output
Output pin current IOL 0.5 - - mA
ON-stage, VOL=0.4V
*1
Power Tr ON resistance Rds ON Id=1A - 220 - mΩ
Turn ON delay time td ON fIN=384kHz, Duty=50% - 30 50 ns
Turn OFF delay time td OFF fIN=384kHz, Duty=50% - 30 50 ns
Rise-up time tr fIN=384kHz, Duty=50% - 5 20 ns
Fall time tf fIN=384kHz, Duty=50% - 5 20 ns
*1 : The maximum power transistor ON resistance(RDSON) is 270mΩ(design guarantee value).
Note : The value of these characteristics were measured in SANYO test environment. The actual value in an end system will vary depending on the printed
circuit board pattern, the components used, and other factors.
Electrical Characteristics
(Reference value: The table below shows the reference value when FPGA equivalent to the Sanyo reference model is used.)
Ratings
Parameter Symbol Conditions Unit
min typ max
Output 1 PO1 THD+N=10%, fIN=1kHz, AES17 - 10 - W
Output 2 PO2 VD=16V, THD+N=10%, fIN=1kHz, AES17 - 15 - W
Total harmonic distortion THD+N PO=1W, fIN =1kHz, AES17 - 0.1 - %
Note : The value of these characteristics were measured in SANYO test environment. The actual value in an end system will vary depending on the printed
circuit board pattern, the components used, and other factors.
BCLK BCLK
No.A1997-2/15
LV4924VH
Package Dimensions
unit : mm (typ)
3417
15.0
36
(4.7)
7.6
5.6
(3.5)
0.5
12
1.625 0.22 0.2
0.65
(0.68)
1.7 MAX
SIDE VIEW
(1.5)
2.17
0.05
SANYO : HSSOP36(275mil)
Pin Assignment
BOOT_CH2_P
BOOT_CH2_N
BOOT_CH1_P
BOOT_CH1_N
OUT_CH2_P
OUT_CH2_P
OUT_CH2_N
OUT_CH1_P
OUT_CH1_P
OUT_CH2_N
OUT_CH1_N
OUT_CH1_N
VDDA2
VDDA1
PVD2
PVD1
PVD1
PVD2
36 35 34 33 32 31 30 29 28 GND 27 26 25 24 23 19 20 21 22
LV4924VH
1 2 3 4 5 6 7 8 9 GND 10 11 12 13 14 15 16 17 18
MUTE
SOS
STBY
NC1
NC2
PWM_B1
NC3
PWM_A1
NC4
PWM_B2
PWM_A2
NC5
NC6
NC7
NC8
NC9
NC10
NC11
Top view
No.A1997-3/15
LV4924VH
Reference data for thermal design
Mounted on a specified board (Customer bread board rev.1.0): 90.0mm × 70.0 mm × 1.6 mm (two-layer) Material: glass epoxy
Pd max-Ta
Pd max -- Ta
6
Specified board : 90.0 × 70.0 × 1.6mm3
Allowable power dissipation, Pd max -- W
glass epoxy
5
Exposed Die-Pad
Soldered
4.6
4
Exposed Die-Pad
Not Soldered
3.2
3
2.7
2
1.9
0
--25 0 25 50 75 100
Ambient temperature, Ta -- C
1. Data of the Exposed Die-Pad (heat spreader) substrate as mounted represents the value in the state where the exposed
Die-Pad surface is wet for 90% or more.
2. For the set design, derating design should be made while ensuring allowance.
Stresses to become an object of derating are the voltage, current, junction temperature, power loss and mechanical
stresses including vibration, impact and tension.
Accordingly, these stresses must be as low or small as possible in the design.
Approximate targets for general derating are as follows:
(1) Maximum value 80% or less for the voltage rating.
(2) Maximum value 80% or less for the current rating.
(3) Maximum value 80% or less for the temperature rating.
3. After set design, be sure to verify the design with the product.
Also check the soldered state of the Exposed Die-Pad, etc. and verify the reliability of the soldered joint.
If any void or deterioration is observed in these sections, thermal conduction to the substrate is deteriorated, resulting in
thermal damage of IC.
No.A1997-4/15
LV4924VH
Block Diagram
GND
GND
GND
GND
No.A1997-5/15
LV4924VH
Continued from preceding page.
Pin No. Pin name I/O Description Equivalent Circuit
3 SOS I Internal protection circuit detection output (OR output of the PVD
thermal detection, over-current, voltage drop protection,
offset detection circuit) of an NPN open collector output type
3
GND
GND
GND
No.A1997-6/15
LV4924VH
Description of functions
System Standby
The built-in 5V regulator is turned ON / OFF by changing over "H" and "L" of "STBY". The regulator is turned OFF
with "STBY" at "L" and ON with "STBY" at "H".
This signal also causes initialization of the internal logic initialization with "L" and the normal mode with "H".
MUTE Function
The MUTE function is mainly for muting of the output and for reduction of pop noise at power ON.
Sequence at power ON
To reduce the pop noise, turn ON power supply while controlling in the following timing (PWM=BD mode).
In particular, all of inputs of PWM must be held at "L" at canceling of MUTE function.
* Please observe the following items for the destruction prevention of the output transistor.
(1) Under all conditions must control the period at the "H" level about the PWM input so as not to become more than
200μs when period of the "H" level MUTE and STBY signals both.
No.A1997-7/15
LV4924VH
Sequence at power OFF
To reduce the pop noise, turn OFF power supply while controlling in the following timing (PWM=BD mode).
Protection Circuit
LV4924VH incorporates the over-current protection circuit, thermal protection circuit, supply voltage drop protection
circuit and output offset detection protection circuit. Activation of any one of these circuits causes the SOS output pin
to become active and thus "L".
Output Current
* The over-current protection circuit functions only to avoid the abnormal state, such as output short-circuit, etc.,
temporarily, and does not guarantee to offer the protection to prevent damage to IC.
No.A1997-8/15
LV4924VH
Thermal protection circuit
This circuit detects the temperature (150°C or more) inside LSI for protection. While this protection circuit is active,
the output Tr is turned OFF on both high- and low-sides, putting the output in the high-impedance state. This operation
is also provided with the hysteresis.
Recovery Voltage
Internal
Control
Signal
No.A1997-9/15
LV4924VH
Application Circuit
GND
GND
No.A1997-10/15
LV4924VH
Characteristics Data: L=22μH (TOKO: A7040HN-220M), C=0.33μF (Matsuo: 553M6302-334K)
Ist -- VD Ipd -- Ta
0.3 0.3
V D =13V, RL=8
IN=Low, STBYB=Low
MUTEB=Low
Standby current, Ist - A
0.1 0.1
0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
IMUTE -- VD IMUTE -- Ta
8 8
RL=8 , IN=Low V D =13V, RL=8
7 STBYB=High, MUTEB=Low 7 IN=0, STBYB=High
MUTEB=Low
Muting current, Imute - mA
5 5
4 4
3 3
2 2
1 1
0 0
4 6 8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
Icco -- VD Icco -- Ta
70 70
RL=8 VD=13V, RL=8
IN=Duty50%[0 to 3.3V] IN=Duty50%[0 to 3.3V]
60 60
STBYB=High, MUTEB=High STBYB=High, MUTEB=High
Quiescent current, Icco - mA
50 50
40 40
30 30
20 20
10 10
0 0
4 6 8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
VDD1,2 -- VD VDD1,2 -- Ta
6 6
RL=8
5 5
4 4
VDDA1,2[V]
VDDA1,2[V]
3 3
2 2
1 1
VD=13V
RL=8
0 0
4 6 8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
No.A1997-11/15
LV4924VH
td ON -- VD td ON -- Ta
60 60
VD=13V
RL=8
50 50
Turn ON delay time, td ON - nsec
30 30
20 20
10 10
0 0
8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
td OFF -- VD td OFF -- Ta
60 60
VD=13V
RL=8
Turn OFF delay time, td OFF - nsec
50 50
30 30
20 20
10 10
0 0
8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
tr -- VD tr -- Ta
30 30
VD=13V
RL=8
Rise-up time, tr - nsec
20 20
10 10
0 0
8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
tf -- VD CH sep. -- Ta
30 30
VD=13V
RL=8
20 20
Full time, tr - nsec
10 10
0 0
8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
No.A1997-12/15
LV4924VH
Efficiency -- Power Pd - Power
100 4
80
3
Efficiency - %
60
Pd - W
2
40
1
20
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Power - W/ch Power - W/ch
Efficiency -- Power Pd - Power
100 5
80 4
Efficiency - %
60 3
Pd - W
40 2
20
1
0 0
0 3 6 9 12 15 0 3 6 9 12 15
Power - W/ch Power - W/ch
Power@THD+N+1% -- VD Power@THD+N+1% -- Ta
32 32
fIN=1kHz VD=13V
THD+N=1% fIN=1kHz
28 28
2CH-Drive THD+N=1%
AES17 RL=6 2CH-Drive
AES17
Power@THD+N=1% - W
Power@THD+N=1% - W
24 24
20 RL=4 20
16 16
RL=4
RL=8
12 12
RL=6
8 8
RL=8
4 4
0 0
8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
Power@THD+N+10% -- VD Power@THD+N+10% -- Ta
44 44
fIN=1kHz VD=13V
40 THD+N=10% 40 fIN=1kHz
2CH-Drive THD+N=10%
36 36
AES17 RL=6 2CH-Drive
Power@THD+N=10% - W
Power@THD+N=10% - W
32 32 AES17
28 28
RL=4
24 24
20 20
RL=8 RL=4
16 16
RL=6
12 12
8 8
RL=8
4 4
0 0
8 10 12 14 16 18 20 22 -40 -20 0 20 40 60 80 100 120
Supply voltage, VD - V Ambient temperature, Ta - C
No.A1997-13/15
LV4924VH
THD+N -- Frequency THD+N -- Ta
100 100
VD=13V VD=13V
Total harmonic distortion, THD+N -- %
RL=8 RL=8
1 1
CH1 CH1
0.1 0.1
CH2 CH2
0.01 0.01
10 100 1000 10000 100000 -40 -20 0 20 40 60 80 100 120
Frequency - Hz Ambient temperature, Ta - C
THD+N -- Frequency THD+N -- Ta
100 100
VD=16V VD=16V
Total harmonic distortion, THD+N -- %
RL=8 RL=8
1 1
CH1 CH1
0.1 0.1 CH2
CH2
0.01 0.01
10 100 1000 10000 100000 -40 -20 0 20 40 60 80 100 120
Frequency - Hz Ambient temperature, Ta - C
THD+N -- Power THD+N -- Power
100 100
VD=13V VD=16V
Total harmonic distortion, THD+N -- %
Total harmonic distortion, THD+N -- %
RL=8 RL=8
2CH-Drive 2CH-Drive
AES17 AES17
10 10
1 1
fIN=100Hz fIN=100Hz
fIN=1kHz fIN=1kHz
0.1 0.1
fIN=6.67kHz fIN=6.67kHz
0.01 0.01
0.0001 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100
Power - W Power - W
No.A1997-14/15
LV4924VH
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of November, 2011. Specifications and information herein are subject
to change without notice.
PS No.A1997-15/15