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    of 4

    Semiconductor Device Modeling With SPICE

    Giuseppe Massobrio
    Department of Electronics {DIBE) University of Genova Genova, Italy

    Paolo Antognetti
    Department of Electronics (DIBE) University of Genova Genova, Italy

    Second Edition

    McGraw-Hill, Inc.
    New York San Francisco Washington, D.C. Auckland Bogota Caracas Lisbon London Madrid Mexico City Milan Montreal New Delhi San Juan Slngapore Sydney Tokyo Toronto

    Contents

    List of Physical Parameters Foreword by Robert W. Button, Stanford University Preface

    ix xi xiii

    Chapter 1 . P/V-Junction D i o d e a n d Schottky D i o d e 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 DC Current-Voltage Characteristics Static Model Large-Signal Model Small-Signal Model Schottky Diode and Its Implementation in SPICE2 Temperature and Area Effects on fhe Diode Model Parameters SPICE3 Models HSPICE Models PSPICE Models

    1 1 11 19 23 26 28 31 31 40 42

    References

    Chapter 2. Bipolar Junction Transistor (BJT)


    2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 Transistor Conventions and Symbols Ebers-Moll Static Model Ebers-Moll Large-Signal Model Ebers-Moll Small-Signal Model Gummel-Poon Static Model Gummel-Poon Large-Signal Model Gummel-Poon Small-Signal Model Temperature and Area Effects on the BJT Model Parameters Power BJT Model SPICE3 Models HSPICE Models PSPICE Models

    45
    46 48 62 70 74 96 101 105 109 118 118 128 129

    References

    vi

    Contents

    Chapter 3. Junction Field-Effect Transistor (JFET)


    3.1 3.2 3.3 3.4 3.5 3.6 3.7 Static Model Large-Signal Model and Its Implementation in SPICE2 Small-Signal Model and Its Implementation in SPICE2 Temperature and Area Effects on the JFET Model Parameters SPICE3 Models HSPICE Models PSPICE Models

    131
    132 146 148 150 152 152 156 158

    References

    C h a p t e r 4. M e t a l - O x i d e - S e m i c o n d u c t o r Transistor ( M O S T ) 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 4.10 4.11 4.12 4.13 4.14 4.15 Structure and Operating Regions of the MOST LEVEL1 Static Model LEVEL2 Static Model LEVEL1 and LEVEL2 Large-Signal Model LEVEL3 Static Model LEVEL3 Large-Signal Model Comments on the Three Models The Effect of Series Resistances Small-Signal Models The Effect of Temperature on the MOST Model Parameters BSIM1 Model BSIM2 Model SPICE3 Models HSPICE Models PSPICE Models

    161 161 168 180 195 202 210 211 212 213 215 216 234 240 242 246 247

    References

    Chapter 5. B J T P a r a m e t e r M e a s u r e m e n t s 5.1 5.2 Input and Model Parameters Parameter Measurements

    251 251 253 265

    References

    Chapter 6. MOST Parameter Measurements


    6.1 6.2 6.3 6.4 6.5 6.6 LEVEL1 Model Parameters LEVEL2 Model (Long-Channel) Parameters LEVEL2 Model (Short-Channel) Parameters LEVEL3 Model Parameters Measurements of Capacitance BSIM Model Parameter Extraction

    267
    267 273 279 289 295 298 298

    References

    Contents

    vii

    Chapter 7. Noise and Distortion 7.1


    7.2

    299 2M
    309 324

    Noise
    Distortion

    References

    Chapter 8. T h e SPICE P r o g r a m 8.1 8.2 SPICE2 Capabilities SPICE2 Structure

    325 325 333

    8.3
    8.4 8.5 8.6 8.7 8.8

    Convergence Problems
    SPICE2 Operation Linked-List Specification SPICE3 Capabilities Versus SPICE2 HSPICE Capabilities Versus SPICE2 PSPICE Capabilities Versus SPICE2

    354
    357 361 371 371 372 373

    References

    Chapter 9. M e t a l - S e m i c o n d u c t o r Field-Effect Transistor, Ion-Sensitive Field-Effect Transistor, a n d Semiconductor-Controlled Rectifier 9.1 9.2 9.3 MESFET ISFET THYRISTOR

    375 376 390 400 408

    References

    Appendix A . PN Junction A.1 A.2 Elements of Semiconductor Physics Physical Operation of the PN Junction

    411 411 421 444

    References

    Appendix B. M O S Junction B.1 MOS Junction

    445 445 469

    References

    Appendix C. MS Junction
    C.1 MS Junction

    471
    471 473

    References

    Index

    475

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