IQE004NE1LM7CG

MOSFET
OptiMOSTM7Power-Transistor,15V PG-TTFN-9

5 6
Features
7 8

•N-channel,logiclevel
•Verylowon-resistanceRDS(on) 9

•Superiorthermalresistance
•100%avalanchetested 4
3
2
•Pb-freeleadplating;RoHScompliant 1

•Halogen-freeaccordingtoIEC61249-2-21
•OptimizedforhighperformanceSMPS,e.g.synchronousrectification

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain
Pin 5-8

Table1KeyPerformanceParameters Gate
Parameter Value Unit Pin 9

VDS 15 V Source
Pin 1-4
RDS(on),max 0.45 mΩ
ID 379 A
Qoss 27 nC
QG 29 nC

Type/OrderingCode Package Marking RelatedLinks

IQE004NE1LM7CG PG-TTFN-9 004E1C7 -

Final Data Sheet 1 Rev.2.0,2023-07-25

 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet 2 Rev.2.0,2023-07-25

 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 379 VGS=7V,TC=25°C
Continuous drain current1) ID - - 240 A VGS=7V,TC=100°C
- - 58 VGS=7V,TA=25°C,RthJA=60°C/W2)
Pulsed drain current3) ID,pulse - - 1516 A TA=25°C
Avalanche energy, single pulse4) EAS - - 859 mJ ID=20A,RGS=25Ω
Recommended gate source voltage VGS -7 - 7 V -
Gate source voltage, transient VGS,AC -8 - 8 V tpulse<20ns
- - 89 TC=25°C
Power dissipation Ptot W
- - 2.1 TA=25°C,RthJA=60°C/W2)
Operating and storage temperature Tj,Tstg -55 - 150 °C -

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.4 °C/W -
Thermal resistance, junction - ambient,
RthJA - - 60 °C/W -
6 cm² cooling area5)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for source
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for connection. PCB is
vertical in still air.
Final Data Sheet 3 Rev.2.0,2023-07-25
 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 15 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=VGS,ID=432µA
- 0.1 1 VDS=12V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=12V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=7V,VDS=0V
- 0.37 0.45 VGS=7V,ID=30A
Drain-source on-state resistance RDS(on) mΩ
- 0.47 0.57 VGS=4.5V,ID=20A
Gate resistance RG - 0.4 - Ω -
Transconductance gfs 85 170 - S |VDS|≥2|ID|RDS(on)max,ID=30A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 4800 6240 pF VGS=0V,VDS=7.5V,f=1MHz
Output capacitance1) Coss - 2600 3380 pF VGS=0V,VDS=7.5V,f=1MHz
Reverse transfer capacitance 1)
Crss - 260 455 pF VGS=0V,VDS=7.5V,f=1MHz
VDD=7.5V,VGS=7V,ID=30A,
Turn-on delay time td(on) - 9 - ns
RG,ext=1.6Ω
VDD=7.5V,VGS=7V,ID=30A,
Rise time tr - 2 - ns
RG,ext=1.6Ω
VDD=7.5V,VGS=7V,ID=30A,
Turn-off delay time td(off) - 21 - ns
RG,ext=1.6Ω
VDD=7.5V,VGS=7V,ID=30A,
Fall time tf - 4 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge1) Qgs - 13 18.8 nC VDD=7.5V,ID=30A,VGS=0to4.5V
Gate charge at threshold1) Qg(th) - 7.6 11 nC VDD=7.5V,ID=30A,VGS=0to4.5V
Gate to drain charge 1)
Qgd - 5.7 8.5 nC VDD=7.5V,ID=30A,VGS=0to4.5V
Switching charge Qsw - 11.1 - nC VDD=7.5V,ID=30A,VGS=0to4.5V
Gate charge total 1)
Qg - 29 36 nC VDD=7.5V,ID=30A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.7 - V VDD=7.5V,ID=30A,VGS=0to4.5V
Gate charge total1) Qg - 44 55 nC VDD=7.5V,ID=30A,VGS=0to7V
Output charge 1)
Qoss - 27 36 nC VDS=7.5V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.0,2023-07-25
 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 87 A TC=25°C
Diode pulse current IS,pulse - - 1516 A TC=25°C
Diode forward voltage VSD - 0.76 1.0 V VGS=0V,IF=30A,Tj=25°C
Reverse recovery time 1)
trr - 31 62 ns VR=7.5V,IF=30A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 24 48 nC VR=7.5V,IF=30A,diF/dt=100A/µs
Reverse recovery time 1)
trr - 25 50 ns VR=7.5V,IF=30A,diF/dt=300A/µs
Reverse recovery charge 1)
Qrr - 49 98 nC VR=7.5V,IF=30A,diF/dt=300A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.0,2023-07-25
 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
100 400

350

80
300

250
60
Ptot[W]

ID[A]
200

40
150

100
20

50

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
4
10 102
single pulse
0.01
0.02
0.05
103 101 0.1
0.2
1 µs 0.5
10 µs

102 100
100 µs
ZthJC[K/W]
ID[A]

10 ms
101 10-1
1 ms

DC
0
10 10-2

10-1 10-3
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.0,2023-07-25

 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
1500 1.0
7V

5V
1200 0.8 3.5 V
4.5 V

4V
4V

900 0.6

RDS(on)[mΩ]
ID[A]

4.5 V

5V
600 0.4

3.5 V 7V

300 0.2

3V

0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
1600 1.4

1400
1.2

1200
1.0

1000
0.8
RDS(on)[mΩ]
ID[A]

800

0.6 150 °C
600
100 °C
0.4
400 25 °C

-55 °C
0.2
200 150 °C

25 °C
0 0.0
0 1 2 3 4 5 0 1 2 3 4 5 6 7
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=30A;parameter:Tj

Final Data Sheet 7 Rev.2.0,2023-07-25

 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
1.6 2.4

2.0
1.4

4320 µA
RDS(on)(normalizedto25°C)

1.6

1.2

VGS(th)[V]
1.2 432 µA

1.0

0.8

0.8
0.4

0.6 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=30A;parameter:VGS VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 104
25 °C
25 °C, max
Ciss 150 °C
150 °C, max

Coss
103
C[pF]

IF[A]

103

102

Crss

102 101
0 3 6 9 12 15 0.0 0.4 0.8 1.2 1.6 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.0,2023-07-25

 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 7
3V
7.5 V
12 V
6

VGS[V]
IAV[A]

101 25 °C
100 °C
125 °C 3

100 0
100 101 102 103 104 0 10 20 30 40 50
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=30Apulsed,Tj=25°C;parameter:VDD

Diagram15:Min.drain-sourcebreakdownvoltage Diagram Gate charge waveforms

17

16
VBR(DSS)[V]

15

14
-75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.0,2023-07-25

 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

5PackageOutlines

MILLIMETERS
DIMENSION DOCUMENT NO.
MIN. MAX. Z8B00192161
A - 1.10
A1 - 0.05 REVISION
03
b 0.20 0.40
b1 0.32 0.52
c 0.20 SCALE 10:1
D 3.30
D1 2.31 2.51 0 1 2mm
D2 1.58 1.78
E 3.30
E1 1.50 1.70 EUROPEAN PROJECTION
e 0.65
e1 0.395
L 0.35 0.55
L1 0.10 0.30
L2 0.40 0.60
L3 1.285 1.485 ISSUE DATE
08.11.2019
L4 0.73 0.93

Figure1OutlinePG-TTFN-9,dimensionsinmm

Final Data Sheet 10 Rev.2.0,2023-07-25

 OptiMOSTM7Power-Transistor,15V
IQE004NE1LM7CG

RevisionHistory
IQE004NE1LM7CG

Revision:2023-07-25,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-07-25 Release of final version

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Final Data Sheet 11 Rev.2.0,2023-07-25

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