IQE046N08LM5

MOSFET
OptiMOSTM5Power-Transistor,80V PG-TSON-8
5 6 7
Features 8

•OptimizedforhighperformanceSMPS,e.g.synchronousrectification
•N-channel,logiclevel
•Verylowon-resistanceRDS(on)
•Superiorthermalresistance 4
3
2
•100%avalanchetested 1

•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain
Pin 5-8

Table1KeyPerformanceParameters Gate
Parameter Value Unit Pin 4

VDS 80 V Source
Pin 1-3
RDS(on),max@10V 4.6 mΩ
RDS(on),max@4.5V 5.9 mΩ
ID 99 A
Qoss 39 nC
QG(0V...4.5V) 19 nC

Type/OrderingCode Package Marking RelatedLinks

IQE046N08LM5 PG-TSON-8 046N8L5 -

Final Data Sheet 1 Rev.2.0,2023-01-12

 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet 2 Rev.2.0,2023-01-12

 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 99 VGS=10V,TC=25°C
- - 70 VGS=10V,TC=100°C
Continuous drain current 1)
ID A
- - 62 VGS=4.5V,TC=100°C
- - 15.6 VGS=10V,TA=25°C,RthJA=60°C/W2)
Pulsed drain current3) ID,pulse - - 396 A TA=25°C
Avalanche energy, single pulse 4)
EAS - - 170 mJ ID=20A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 100 TC=25°C
Power dissipation Ptot W
- - 2.5 TA=25°C,RthJA=60°C/W2)
Operating and storage temperature Tj,Tstg -55 - 175 °C -

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.9 1.5 °C/W -
Thermal resistance, junction - ambient,
RthJA - - 60 °C/W -
6 cm² cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.0,2023-01-12
 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 80 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=47µA
- 0.1 1 VDS=80V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=80V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 4.0 4.6 VGS=10V,ID=20A
Drain-source on-state resistance RDS(on) mΩ
- 5.2 5.9 VGS=4.5V,ID=10A
Gate resistance RG - 0.6 0.9 Ω -
Transconductance 1)
gfs - 62 - S |VDS|≥2|ID|RDS(on)max,ID=20A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 2500 3250 pF VGS=0V,VDS=40V,f=1MHz
Output capacitance1) Coss - 390 507 pF VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance 1)
Crss - 26 47 pF VGS=0V,VDS=40V,f=1MHz
VDD=40V,VGS=10V,ID=20A,
Turn-on delay time td(on) - 5.2 - ns
RG,ext=1.6Ω
VDD=40V,VGS=10V,ID=20A,
Rise time tr - 2.6 - ns
RG,ext=1.6Ω
VDD=40V,VGS=10V,ID=20A,
Turn-off delay time td(off) - 18 - ns
RG,ext=1.6Ω
VDD=40V,VGS=10V,ID=20A,
Fall time tf - 4.4 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 7 - nC VDD=40V,ID=20A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 4.3 - nC VDD=40V,ID=20A,VGS=0to4.5V
Gate to drain charge 1)
Qgd - 6.4 9.6 nC VDD=40V,ID=20A,VGS=0to4.5V
Switching charge Qsw - 9.1 - nC VDD=40V,ID=20A,VGS=0to4.5V
Gate charge total 1)
Qg - 19 24 nC VDD=40V,ID=20A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.8 - V VDD=40V,ID=20A,VGS=0to4.5V
Gate charge total Qg - 38 - nC VDD=40V,ID=20A,VGS=0to10V
Output charge 1)
Qoss - 39 51 nC VDS=40V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.0,2023-01-12
 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 83 A TC=25°C
Diode pulse current IS,pulse - - 396 A TC=25°C
Diode forward voltage VSD - 0.83 1.0 V VGS=0V,IF=20A,Tj=25°C
Reverse recovery time 1)
trr - 32 64 ns VR=40V,IF=20A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 26 52 nC VR=40V,IF=20A,diF/dt=100A/µs
Reverse recovery time 1)
trr - 18 36 ns VR=40V,IF=20A,diF/dt=1000A/µs
Reverse recovery charge 1)
Qrr - 129 258 nC VR=40V,IF=20A,diF/dt=1000A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.0,2023-01-12
 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
120 120

100 100

80 80
Ptot[W]

ID[A]
60 60

40 40

20 20

0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 102
1 µs single pulse
0.01
0.02
10 µs 0.05
102 101 0.1
0.2
0.5
100 µs

101 100
ZthJC[K/W]
ID[A]

1 ms

DC
100 10-1
10 ms

10-1 10-2

10-2 10-3
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.0,2023-01-12

 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
400 12
10 V
2.8 V
350 5V
10 3V 4V
3.5 V
300

8
250
4.5 V

RDS(on)[mΩ]
4.5 V
ID[A]

200 6

5V
150
4V
4
3.5 V 10 V
100

2
50 3V

2.8 V
0 0
0 1 2 3 4 5 0 25 50 75 100 125 150 175 200
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
400 12

350
10

300 25 °C

8 175 °C
250
RDS(on)[mΩ]

175 °C
ID[A]

200 6

150
4

100 25 °C

2
50

0 0
0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=20A;parameter:Tj

Final Data Sheet 7 Rev.2.0,2023-01-12

 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.4 2.4

2.0 2.0
RDS(on)(normalizedto25°C)

1.6 1.6 470 µA

VGS(th)[V]
1.2 1.2
47 µA

0.8 0.8

0.4 0.4

0.0 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
25 °C, max
175 °C
175 °C, max

Ciss
3
10 102
C[pF]

IF[A]

Coss

102 101

Crss
1
10 100
0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.0,2023-01-12

 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 10
16 V
40 V
64 V

101
25 °C
6
100 °C

VGS[V]
IAV[A]

150 °C

4
0
10

10-1 0
100 101 102 103 0 5 10 15 20 25 30 35 40
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms

88

86

84
VBR(DSS)[V]

82

80

78

76
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.0,2023-01-12

 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

5PackageOutlines

MILLIMETERS
DIMENSION DOCUMENT NO.
MIN. MAX. Z8B00198723
A - 1.10
A1 - 0.05 REVISION
01
b 0.20 0.40
c 0.20
D 3.30 SCALE 10:1
D1 2.31 2.51
E 3.30 0 1 2mm
e 0.65
L 0.35 0.55
L1 0.10 0.30 EUROPEAN PROJECTION
L2 0.40 0.60
L3 1.35 1.55
L4 0.26 0.46
L5 0.84 1.04
L6 0.77 0.97
ISSUE DATE
06.11.2019

Figure1OutlinePG-TSON-8,dimensionsinmm

Final Data Sheet 10 Rev.2.0,2023-01-12

 OptiMOSTM5Power-Transistor,80V
IQE046N08LM5

RevisionHistory
IQE046N08LM5

Revision:2023-01-12,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-01-12 Release of final version

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Final Data Sheet 11 Rev.2.0,2023-01-12

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