TSAL7600

Vishay Semiconductors

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Description
TSAL7600 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear plas-
tic packages.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve more than 100 % radi-
ant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the 94 8389

standard technology. Therefore these emitters are

ideally suitable as high performance replacements of
standard emitters.

Features Applications
• Extra high radiant power and radiant • Infrared remote control units with high power
intensity requirements
• High reliability • Free air transmission systems
• Low forward voltage
e2
• Infrared source for optical counters and card
• Suitable for high pulse current operation readers
• Standard T-1¾ (∅ 5 mm) package • IR source for smoke detectors
• Angle of half intensity ϕ = ± 30°
• Peak wavelength λp = 940 nm
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Reverse voltage VR 5 V
Forward current IF 100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 1.5 A
Power dissipation PV 210 mW
Junction temperature Tj 100 °C
Operating temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C
Thermal resistance junction/ RthJA 350 K/W
ambient

Document Number 81015 www.vishay.com

Rev. 1.6, 28-Nov-06 1
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Vishay Semiconductors

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 100 mA, tp = 20 ms VF 1.35 1.6 V
IF = 1 A, tp = 100 µs VF 2.6 3 V
Temp. coefficient of VF IF = 100 mA TKVF - 1.3 mV/K
Reverse current VR = 5 V IR 10 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 25 pF

Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Radiant intensity IF = 100 mA, tp = 20 ms Ie 15 25 75 mW/sr
IF = 1.0 A, tp = 100 µs Ie 120 200 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe 35 mW
Temp. coefficient of φe IF = 20 mA TKφe - 0.6 %/K
Angle of half intensity ϕ ± 30 deg
Peak wavelength IF = 100 mA λp 940 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temp. coefficient of λp IF = 100 mA TKλp 0.2 nm/K
Rise time IF = 100 mA tr 800 ns
Fall time IF = 100 mA tf 800 ns
Virtual source diameter ∅ 1.8 mm

Typical Characteristics
Tamb = 25 °C, unless otherwise specified

250 250
PV - Power Dissipation (MW)

IF - Forward Current (mA)

200 200

150 150
R thJA
100 100
RthJA
50 50

0 0
0 20 40 60 80 100 0 20 40 60 80 100
94 7957 Tamb - Ambient Temperature (°C) 96 11986 Tamb - Ambient Temperature (°C)

Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature

www.vishay.com Document Number 81015

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 TSAL7600
Vishay Semiconductors

10 1 1000

I e - Radiant Intensity (mW/sr)

I F - Forward Current (A)

I FSM = 1 A (Single Pulse) 100

t p/T = 0.01
10 0 0.05 10

0.1

0.5 1

1.0
10 -1 0.1
10 -2 10 -1 10 0 10 1 10 2 100 101 102 103 104
96 11987 t p - Pulse Duration (ms) 14255 I F - Forward Current (mA)

Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current

104 1000
IF - Forward Current (mA)

Φ e - Radiant Power (mW)

103 100

102 10
tP = 100 µs
tP/T = 0.001
101 1

100 0.1
0 1 2 3 4 10 0 10 1 10 2 10 3 10 4
13600 VF - Forward Voltage (V) 13602 I F - Forward Current (mA)

Figure 4. Forward Current vs. Forward Voltage Figure 7. Radiant Power vs. Forward Current

1.2 1.6
V Frel - Relative Forward Voltage (V)

1.1
1.2
IF = 10 mA IF = 20 mA
I e rel ; Φe rel

1.0
0.8
0.9

0.4
0.8

0.7 0
0 20 40 60 80 100 - 10 0 10 50 100 140
94 7990 T amb - Ambient Temperature (°C) 94 7993 T amb - Ambient Temperature (°C)

Figure 5. Relative Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature

Document Number 81015 www.vishay.com

Rev. 1.6, 28-Nov-06 3
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Vishay Semiconductors

0° 10° 20°
1.25 30°

I e rel - Relative Radiant Intensity

Φe rel - Relative Radiant Power

1.0

40°
0.75 1.0

0.9 50°
0.5
0.8 60°

0.25 70°
0.7
IF = 100 mA 80°
0
890 940 990 0.6 0.4 0.2 0 0.2 0.4 0.6
14291 λ - Wavelength (nm) 94 8011

Figure 9. Relative Radiant Power vs. Wavelength Figure 10. Relative Radiant Intensity vs. Angular Displacement

Package Dimensions in mm

20327

www.vishay.com Document Number 81015

4 Rev. 1.6, 28-Nov-06
 TSAL7600
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 81015 www.vishay.com

Rev. 1.6, 28-Nov-06 5
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1
Mouser Electronics

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TSAL7600