32-Bit Micro Controller Based On ARM Cortex M0
32-Bit Micro Controller Based On ARM Cortex M0
32-Bit Micro Controller Based On ARM Cortex M0
MM32F003
Ver: 1.11_q
2 Specification 3
2.1 Device contrast . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
® TM
2.2.1 ARM Cortex -M0 and SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2.2 Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2.3 SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2.4 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2.5 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2.6 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2.7 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2.8 Power supply supervisors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2.9 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2.10 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2.11 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2.12 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2.13 Universal asynchronous receiver/transmitter (UART) . . . . . . . . . . . . . . . . . . . . . 9
2.2.14 I2C interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2.15 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2.16 General-purpose inputs/outputs (GPIO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2.17 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2.18 Hardware Dvision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2.19 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.2.20 Serial single line SWD debug port (SW-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3 Pin definition 12
4 Memory mapping 17
5 Electrical characteristics 19
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.3.2 Operating conditions at power-up/power-down . . . . . . . . . . . . . . . . . . . . . . . . . 23
1
5.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . . . . . . . . . 23
5.3.4 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.3.5 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
5.3.6 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.3.7 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.3.8 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.3.9 Absolute Maximum (Electrical Sensitivity) . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
5.3.10 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.3.11 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
5.3.12 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.3.13 Communication interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
5.3.14 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
5.3.15 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
6 Package information 49
6.1 QFN20 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
6.2 TSSOP20 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
7 Revision history 53
2
List of Figures
1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2 Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3 TSSOP20 packet pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 QFN20 packet pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
9 Typical current consumption in standby mode vs. temperature at VDD = 3.3V . . . . . . . . . . . . 25
10 Typical current consumption in stop mode vs. temperature at VDD = 3.3V . . . . . . . . . . . . . . 26
11 High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . 28
12 Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
13 I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
14 Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
15 I2C bus AC waveform and measurement circuit(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
16 SPI timing diagram-slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
17 SPI timing diagram-slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
18 SPI timing diagram-master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
19 Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
20 Power supply and reference power supply decoupling circuit . . . . . . . . . . . . . . . . . . . . . 47
21 QFN20 - 20-pin quad flat no-leads package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
22 TSSOP20 - 20-lead thin shrink small outline package outline . . . . . . . . . . . . . . . . . . . . . 51
3
List of Tables
1 MM32F003 device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4 Alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Additional functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8 Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
9 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
10 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
11 Operating conditions at power-up/power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
12 Embedded reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . 23
13 Typical and maximum current consumption in stop and standby modes(2) . . . . . . . . . . . . . . 25
14 Typical current consumption in Run mode, code executing from Flash . . . . . . . . . . . . . . . . 26
15 Typical current consumption in sleep mode, code executing from Flash or RAM . . . . . . . . . . 27
16 On-chip peripheral current consumption(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
17 High-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
18 HSE oscillator characteristics(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
19 HSI oscillator characteristics(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
20 LSI oscillator characteristics(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
21 Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
22 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
23 Flash memory endurance and data retention(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
24 EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
25 ESD characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
26 I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
27 Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
28 I/O AC characteristics(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
29 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
30 TIMx(1) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
31 I2C characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
32 SPI characteristics(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
33 ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
34 Maximum RAIN at fADC = 15MHz(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
35 ADC Accuracy - Limit Test Conditions(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
36 Temperature sensor characteristics(3)(4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
37 QFN20 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
38 TSSOP20 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
39 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
4
Introduction
DS_MM32F003_q_Ver1.11
1 Introduction
Introduction
1.1 Description
The microcontrollers incorporate the high-performance ARM® CortexTM -M0 32-bit core
operating at 48 MHz frequency, high-speed embedded memories, and an extensive range
of enhanced I/Os and peripherals connected to two APB buses. All devices offer 1 12-bit
ADC, 2 general purpose 16-bit timers, 3 Basic timers, 1 Advanced 16-bit timer, as well as
standard communication interfaces: 1 I2C , 1 SPI , , , and 1 UART.
The device operates from a 2.0V ∼ 5.5V power supply. They are available in both the
-40◦ C ∼ +85◦ C temperature range and the -40◦ C ∼ +105◦ C extended temperature range.
A comprehensive set of power-saving mode allows the design of low-power applications.
This product is available in 2 different package types: TSSOP20 and QFN20. Depending
on the device chosen, different sets of peripherals are included.
The description below gives an overview of the complete range of peripherals proposed
in this family.
These rich peripheral configurations make this product microcontroller suitable for a wide
range of applications:
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Introduction
DS_MM32F003_q_Ver1.11
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Specification
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2 Specification
Specification
12-bit ADC 1
(number of channels) 8 channels
Max CPU frequency 48 MHz
Operating voltage 2.0V ∼ 5.5V
Packages TSSOP20 QFN20
2.2 Summary
The ARM® CortexTM -M0 processors feature exceptional code-efficiency, delivering the
high performance expected from an ARM core, with memory sizes usually associated
with 8- and 16-bit devices.
The devices embed ARM core and are compatible with all ARM tools and software.
2.2.2 Memory
16K Bytes of embedded Flash memory.
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Specification
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2.2.3 SRAM
2K Bytes of embedded SRAM.
This hardware block provides flexible interrupt management features with minimal inter-
rupt latency.
Several prescalers allow the application to configure the frequency of the AHB and the
APB domains. The maximum frequency of the AHB and the APB domains is 48 MHz.Refer
to figure 2 for the clock drive block diagram.
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Specification
DS_MM32F003_q_Ver1.11
The device features an embedded programmable voltage detector (PVD) that monitors
the VDD /VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD drops below the VPVD threshold and/or when VDD is higher than
the VPVD threshold.The interrupt service routine can then generate a warning message
and/or put the MCU into a safe state. The PVD is enabled by software.
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can wake
up the CPU when an interrupt/event occurs.
Stop mode
Stop mode achieves very low power consumption while retaining the content of SRAM
and registers. the HSI and the HSE crystal oscillators are disabled. The voltage regulator
can also be put either in normal or in low power mode.
Standby mode
Standby mode achieves the lowest power consumption of the system. This mode turns
off the voltage regulator in CPU deep sleep mode. The entire 1.5V power supply area
is powered down. HSI and HSE oscillators are also powered down. SRAM and register
contents are missing.
Each channel is connected to dedicated hardware DMA requests, with support for soft-
ware trigger on each channel. Configuration is made by software and transfer sizes be-
tween source and destination are independent.
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Specification
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Specification
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• Input capture
• Output compare
• PWM generation (edge or center-aligned modes)
• One-pulse mode output
If configured as a standard 16-bit timer, it has the same features as the TIMx timer. If
configured as the 16-bit PWM generator, it has full modulation capability (0 ∼ 100%).
In debug mode, the counter can be frozen and the PWM output is disabled to cut off the
switches controlled by these outputs.
Many features are shared with those of the standard timers which have the same archi-
tecture. The advanced control timer can therefore work together with the other timers via
the Timer Link feature for synchronization or event chaining.
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Specification
DS_MM32F003_q_Ver1.11
The timer can work together or with the TIM1 advanced-control timer via the Timer Link
feature for synchronization or event chaining. Their counter can be frozen in debug mode.
Any of the general-purpose timers can be used to generate PWM outputs. They all have
independent DMA request generation.
These timers are capable of handling quadrature (incremental) encoder signals and the
digital outputs from 1 to 3 hall-effect sensors.
Basic timer
TIM14
This timer is based on a 16-bit auto-reload upcounter and a 16-bit prescaler. TIM14 fea-
tures one single channel for input capture/output compare, PWM or one-pulse mode out-
put. Their counter can be frozen in debug mode.
TIM16/TIM17
Every timer is based on a 16-bit auto-reload upcounter and a 16-bit prescaler. They each
have a single channel for input capture/output compare, PWM or one-pulse mode output.
TIM16 and TIM17 have a complementary output with dead-time generation and indepen-
dent DMA request generation. Their counters can be frozen in debug mode.
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a stan-
dard down counter. It features:
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Specification
DS_MM32F003_q_Ver1.11
Compatible with ISO7816 smart card mode. The UART interface supports output data
lengths of 5 bits, 6 bits, 7 bits, 8 bits, and 9 bits.
It supports 7-bit and 10-bit addressing modes, multiple 7-bit slave addresses (two ad-
dresses, one with configurable mask).
The analog watchdog function allows very precise monitoring of all the way, multiple or
all selected channels, and an interruption occurs when the monitored signal exceeds the
preset threshold. The events generated by the general-purpose timers (TIMx) and the
advanced-control timer (TIM1) can be internally connected to the ADC start trigger to
allow the application to synchronize A/D conversion and timers.
Each time the divisor register is written, the division operation is automatically triggered.
After the operation is completed, the result is written to the quotient and remainder regis-
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Specification
DS_MM32F003_q_Ver1.11
ters. If the reader register, remainder register, or status register is read before the end,
the read operation is suspended until the end of the operation.
An ARM SW-DP interface is provided to allow a serial wire debugging tool to be connected
to the MCU.
System
CPU
AHB SRAM
Bus Matrix
AHB CRC
DMA
DMA
DMA request
709574
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Specification
DS_MM32F003_q_Ver1.11
HSI / 6 HCLK
HSI to AHB bus, core
48 MHz
Clock memory and DMA
Enable (3 bits)
SW /8 to Cortex System !mer
HSI / 6 FCLK Cortex
Free running clock
HSI AHB APB1
SYSCLK
Prescaler Prescaler PCLK1
to APB1
OSC_OUT HSE OSC HSE /1,2..512 /1,2,4,8,16 peripherals
Peripheral Clock
OSC_IN 2 - 24 MHz LSI Enable (10 bits)
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Pin definition
DS_MM32F003_q_Ver1.11
3 Pin definition
Pin definition
PB6 PB4
PB7 PB3
PA6 PA14
nNRST PA13
PD0-OSC_IN PB14
TSSOP20
PD1-OSC_OUT PB13
VSSA-VSS PB1
VCap PB0
VDD-VDDA PA5
PA0 PA4
415138
PB6
PB4
PB3
PA6
20
19
18
17
16
nNRST 1 15 PA14
PD0-OSC_IN 2 14 PA13
QFN20 13
PD1-OSC_OUT 3 PB14
VSSA-VSS
- 4 12 PB13
VCap 5 11 PB1
10
6
9
PA0
PA5
VDD-VDDA
PA4
PB0
451975
annotate: VCap should be setted to float or connect to ground with 0.1uF-0.01uF capacitor.
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Pin definition
DS_MM32F003_q_Ver1.11
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Pin definition
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Pin definition
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Pin definition
DS_MM32F003_q_Ver1.11
Pin
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
Name
TIM1_
PB14 - SPI2_MOSI SPI2_SCK SPI2_NSS I2C1_SDA TIM1_CH3 TIM1_CH1
CH2N
PD0 - I2C1_SDA - - - - - -
PD1 - I2C1_SCL - - - - - -
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Memory mapping
DS_MM32F003_q_Ver1.11
4 Memory mapping
Memory mapping
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Memory mapping
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Electrical characteristics
DS_MM32F003_q_Ver1.11
5 Electrical characteristics
Electrical characteristics
C = 50 pF
230907
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Electrical characteristics
DS_MM32F003_q_Ver1.11
VIN
984785
VCAP
VDD
VDD
1/2/3
Regulator
IO (CPU, Digital
GP I/Os & Memories)
IN Logic
5x100nF VSS
+1x4.7µF 1/2/3
VDD
VDDA
10nF Analog:
+1µF $'& RC, PLL, COMP ...
VSSA
782609
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Electrical characteristics
DS_MM32F003_q_Ver1.11
I DD_VBAT
VBAT
I DD
VDD
VDDA
738329
Stresses above the absolute maximum ratings listed in Tables(Table 7、Table 8、Table 9)
may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
1. All main power (VDD , VDDA ) and ground (VSS , VSSA ) pins must always be connected to
the external power supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table below for maximum allowed
injected current values.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
1. All main power(VDD , VDDA ) and ground(VSS , VSSA ) pins must always be connected to
the external power supply, in the permitted range.
2. This current consumption must be properly distributed to all I/O and control pins. The
total output current must not be poured/pulled between the two consecutive power
supply pins of the reference high pin count LQFP package.
3. Negative injection disturbs the analog performance of the device.
4. When VIN > VDD , there is a forward injection current; when VIN < VSS , there is a reverse
injection current.Do not exceed IINJ(PIN) .
5. When several inputs are submitted to a current injection, the maximum IINJ(PIN) is the
absolute sum of the positive and negative injected currents (instantaneous values).
◦
TSTG Storage temperature range - 45 ∼ + 150 C
Maximum junction
◦
TJ 125 C
temperature
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Electrical characteristics
DS_MM32F003_q_Ver1.11
1. It is recommended to use the same power supply for VDD and VDDA , the maximum
permissible difference between VDD and VDDA is 300mVduring power up and normal
operation.
2. If TA is low, higher PD values are allowed as long as TJ does not exceed TJmax (See
subsec 5.1).
3. In low power dissipation state, TA can be extended to this range as long as TJ does
not exceed TJmax (See subsec 5.1).
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VPVD Level selection of programmable voltage detectors
Electrical characteristics
DS_MM32F003_q_Ver1.11
1. The product behavior is guaranteed by design down to the minimum value VPOR/PDR .
2. Guaranteed by design, not tested in production.
Note: The reset duration is measured from power-on (POR reset) to the time when the user appli-
cation code reads the first instruction.
All Run-mode current consumption measurements given in this section are performed with
a reduced code.
• All I/O pins are in analog input mode, and are connected to a static level —- VDD or VSS
(no load)
• All peripherals are disabled except when explicitly mentioned
• The Flash memory access time is adjusted to the fHCLK (0 ∼ 24 MHz is 0 waiting period
, 24 ∼ 48 MHz is 1 waiting period ).
• The instruction prefetching function is on. When the peripherals are enabled:fPCLK1 =
fHCLK .
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Electrical characteristics
DS_MM32F003_q_Ver1.11
Note:The instruction prefetching function must be set before setting the clock and bus divider.
Table 13. Typical and maximum current consumption in stop and standby modes(2)
Max(1)
Symbol Parameter Conditions Unit
TA =25◦ C
Supply current in Stop mode Enter the stop mode after reset 6
IDD Supply current in Standby µA
Enter the standby mode after reset 0.4
mode
90
80
70
60
50
40
30
20
10
0
TA = - 40°C TA = 25°C TA = 70°C TA = 105°C
6XSSO\FXUUHQWLQVWDQGE\PRGH X$
148491
Figure 9. Typical current consumption in standby mode vs. temperature at VDD = 3.3V
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Electrical characteristics
DS_MM32F003_q_Ver1.11
90
80
70
60
50
40
30
20
10
0
TA = - 40°C TA = 25°C TA = 70°C TA = 105°C
6XSSO\FXUUHQWLQVWRSPRGH X$
577187
Figure 10. Typical current consumption in stop mode vs. temperature at VDD = 3.3V
• All I/O pins are in analog input configuration, and are connected to a static level —- VDD
or VSS (no load).
• All the peripherals are closed, unless otherwise specified.
• The Flash memory access time is adjusted to the fHCLK (0 ∼ 24 MHz is 0 waiting period
, 24 ∼ 48 MHz is 1 waiting period ).
• The ambient temperature and VDD supply voltage conditions are summarized in Ta-
ble 10.
• The instruction prefetching function is on (Note:this parameter must be set before
setting the clock and bus divider). When the peripherals are enabled:fPCLK1 = fHCLK .
Table 14. Typical current consumption in Run mode, code executing from Flash
Typ(1)
Symbol Parameter Conditions fHCLK All peripherals All peripherals Unit
enabled disabled
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Electrical characteristics
DS_MM32F003_q_Ver1.11
Table 15. Typical current consumption in sleep mode, code executing from Flash or RAM
Typ(1)
Symbol Parameter Conditions fHCLK (2) All peripherals All peripherals Unit
enabled disabled
• all I/O pins are in analog input mode, and are connected to a static level —- VDD or VSS
(no load)
• all peripherals are disabled except when explicitly mentioned
• the given value is calculated by measuring the current consumption
– with all peripherals clocked OFF
– with only one peripheral clocked on
• ambient operating temperature and supply voltage conditions VDD summarized in Ta-
ble 10
Peripheral 25 ◦ C
Unit
Typical consumption at Peripheral 25 ◦ C
Unit
Typical consumption at
1. fHCLK = 48MHz, fAPB1 = fHCLK /2, fAPB2 = fHCLK , the prescale coefficient for each device
is the default value.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
VHSEH
90%
10%
VHSEL
tr(HSE) tf(HSE) tw(HSE) tw(HSE) t
THSE
External Clock IL
Source fHSE_ext OSC_IN
474122
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Electrical characteristics
DS_MM32F003_q_Ver1.11
resonator oscillator. All the information given in this paragraph are based on design simu-
lation results obtained with typical external components specified in the table below. In the
application, the resonator and the load capacitors have to be placed as close as possible
to the oscillator pins in order to minimize output distortion and startup stabilization time.
Refer to the crystal resonator manufacturer for more details on the resonator characteris-
tics (frequency, package, accuracy...).
Table 18. HSE oscillator characteristics(1)(2)
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Electrical characteristics
DS_MM32F003_q_Ver1.11
䳶ᡀҶ⭥ᇩಘ
Ⲵ䉀ᥟಘ
CL1
OSC_IN fHSE
8MHz ໎⳺
RF ᧗ࡦ
䉀ᥟಘ
OSC_OUT
REXT:
CL2
095788
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Electrical characteristics
DS_MM32F003_q_Ver1.11
All times are measured using ambient temperature and supply voltage in accordance with
common operating conditions.
1. The wake-up time is measured from the start of the wake-up event to the user program
to read the first instruction.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
Endurance
(Annotation:
NEND Erase 20 K cycle
number of
times)
Data TA = 105◦ C 20
tRET Year
◦
retention TA = 25 C 100
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a
functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB:A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 1000-4-4 standard.
The test results are given in the following table. They are based on the EMS levels and
classes defined in application note.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre-
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range
of specification values. When unexpected behavior is detected, the software can be hard-
ened to prevent unrecoverable errors.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up perfor-
mance:
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Electrical characteristics
DS_MM32F003_q_Ver1.11
VIL (Hysteresis open) Low level input voltage CMOS Port 0.16VDD 0.2VDD V
VIH (Hysteresis open) High level input voltage CMOS Port 0.8VDD 0.84VDD V
VIL (Hysteresis close) Low level input voltage CMOS Port 0.33VDD 0.37VDD V
VIH (Hysteresis close) High level input voltage CMOS Port 0.58VDD 0.62VDD V
Vhys (Hysteresis open) Schmitt trigger hysteresis(1) 1.2 3 3.3 V
Vhys (Hysteresis close) (1)
Schmitt trigger hysteresis 0.5 1.2 1.4 V
Ilkg Input leakage current (2)
±1 µA
Weak pull-up equivalent
RPU VIN = VSS 28.7 36 47.9 kΩ
resistor(3)
Weak pull-down equivalent
RPD VIN = VDD 25 31.2 40 kΩ
resistor(3)
CIO I/O pin capacitance 5 pF
All I/Os are CMOS (no software configuration required). Their characteristics cover more
than the strict CMOS-technology.
• For VIH :
– If VDD is between [2.50V∼ 3.08V]; use CMOS features.
– If VDD is between [3.08V∼ 3.60V]; include CMOS.
• For VIL :
– Use CMOS features.
n the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in 5.2:
• The sum of the currents obtained from VDD for all I/O ports, plus the maximum operating
current that the MCU obtains on VDD , cannot exceed the absolute maximum rating IVDD .
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Electrical characteristics
DS_MM32F003_q_Ver1.11
• The sum of the currents drawn by all I/O ports and flowing out of VSS , plus the maximum
operating current of the MCU flowing out on VSS , cannot exceed the absolute maximum
rating IVSS .
Input/output AC characteristics
The definitions and values of the input and output AC characteristics are given in figure 13
and Table 28, respectively.
Unless otherwise stated, the parameters listed in Table 28 are measured using the ambient
temperature and supply voltage in accordance with the condition Table 7.
Table 28. I/O AC characteristics(1)
OSPEEDRy
Symbol Parameter Conditions Min Max Unit
[1:0] value (1)
Maximum CL = 50pF,
00 fmax(IO)out 2 MHz
frequency(2) VDD = 2V ∼ 5.5V
CL = 50pF,
00 tf(IO)out Output fall time 125 nS
VDD = 2V ∼ 5.5V
CL = 50pF,
00 tr(IO)out Output rise time 125 nS
VDD = 2V ∼ 5.5V
Maximum CL = 50pF,
10 fmax(IO)out 20 MHz
frequency (2)
VDD = 2V ∼ 5.5V
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Electrical characteristics
DS_MM32F003_q_Ver1.11
OSPEEDRy
Symbol Parameter Conditions Min Max Unit
[1:0] value (1)
CL = 50pF,
10 tf(IO)out Output fall time 25 nS
VDD = 2V ∼ 5.5
CL = 50pF,
10 tr(IO)out Output rise time 25 nS
VDD = 2V ∼ 5.5
CL = 30pF,
11 fmax(IO)out Maximum frequency(2) 50 MHz
VDD = 2V ∼ 5.5V
CL = 50pF,
11 fmax(IO)out Maximum frequency(2) 30 MHz
VDD = 2V ∼ 5.5V
CL = 30pF,
11 5 nS
VDD = 2V ∼ 5.5V
tf(IO)out Output fall time
CL = 50pF,
11 8 nS
VDD = 2V ∼ 5.5V
CL = 30pF,
11 5 nS
VDD = 2V ∼ 5.5V
tr(IO)out Output rise time
CL = 50pF,
11 8 nS
VDD = 2V ∼ 5.5V
EXTI controller
1. The speed of the I/O port can be configured via MODEx[1:0]. See the description of
the GPIO Port Configuration Register in this chip reference manual.
2. The maximum frequency is defined in figure 13.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
90% 10%
50% 50%
90%
10%
The external output
Maximum frequency is achieved if ((tr + tf) ≤ 2/3)T, and if the duty cycle is (45 ~ 55%)
when loaded by C/(see the i/O AC characteristics definition)
868304
Unless otherwise stated, the parameters listed in the table below are measured using the
ambient temperature and VDD supply voltage in accordance with the condition of Table 10.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
External
reset circuit VDD
RPU Internal
NRST(2) reset
Filter
0.1µF
368560
For details on the characteristics of the I/O multiplexing function pins (output compare,
input capture, external clock, PWM output) , see subsubsec 5.3.10.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
The I2C interface conforms to the standard I2C communication protocol, but has the fol-
lowing limitations: SDA and SCL are not true pins. When configured as open-drain output,
the PMOS transistor between the pin and VDD Was closed but still exists.
The I2C I/Os characteristics are listed in Table 31, the alternate function characteristics of
I/Os (SDA and SCL) refer to subsubsec 5.3.10.
Table 31. I2C characteristics
Standard I2C(1) Fast I2C (1)(2)
Symbol Parameter Unit
Min Max Min Max
tw(SCLL) SCL clock fall time 4.7 1.3 µs
tw(SCLH) SCL clock rise time 4.0 0.6 µs
tsu(SDA) SDA setup time 250 100
th(SDA) SDA data hold time 0(3) 0(4) 900(3)
ns
tr(SDA) tr(SDL) SDA and SCL rise time 1000 2.0+0.1Cb 300
tf(SDA) tf(SDL) SDA and SCL fall time 300 300
th(STA) Start condition hold time 4.0 0.6
tsu(STA) Start condition setup time 4.7 0.6
tsu(STO) Stop condition setup time 4.0 0.6 µs
Time from Stop condition to
tw(STO:STA) 4.7 1.3
Start condition
Cb Capacitive load of each bus 400 400 pF
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Electrical characteristics
DS_MM32F003_q_Ver1.11
VDD VDD
4.7KΩ 4.7KΩ
100 Ω
SDA
,&EXV 100 Ω
SCL
Start repeated
Start
t su(STA) Start
SDA
t f(SDA) t r(SDA) t su(SDA) t su(STA:STO)
Stop
t h(STA) t w (SCKL) t h(SDA)
SCL
t w (SCKH) t r(SCK) t f(SCK) t su(STO)
澳
130244
SPI characteristics
Unless otherwise specified, the parameters given in Table 32 are derived from tests per-
formed under the ambient temperature, fPCLKx frequency and VDD supply voltage condi-
tions summarized in Table 10.
Refer to subsubsec 5.3.10 for more details on the input/output alternate function charac-
teristics (NSS, SCK, MOSI, MISO).
Table 32. SPI characteristics(1)
Symbol Parameter Conditions Min Max Unit
Master mode 0 36
fSCK 1/tc(SCK) SPI clock frequency MHz
Slave mode 0 18
tr(SCK) SPI clock rise and fall
Load capacitance: C = 30pF 8 ns
tf(SCK) time
tsu(NSS) (2) NSS setup time Slave mode 4tPCLK ns
th(NSS) (2) NSS hold time Slave mode 73 ns
tw(SCKH) (2) Master mode,fPCLK = 36MHz,
SCK high and low time 50 60 ns
(2)
tw(SCKL) prescale coefficient = 4
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Electrical characteristics
DS_MM32F003_q_Ver1.11
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Electrical characteristics
DS_MM32F003_q_Ver1.11
CPHA =0
CPOL = 1
CPOL = 0
NSS
(to slave)
CAPTURE STROBE
679527
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Electrical characteristics
DS_MM32F003_q_Ver1.11
CPHA=1
CPOL = 1
CPOL = 0
MISO
MSBit LSBit
(from master)
MOSI
MSBit LSBit
(from slave)
NSS
(to slave)
CAPTURE STROBE
429658
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Electrical characteristics
DS_MM32F003_q_Ver1.11
High
NSS INPUT
t c(SCK)
CPHA = 0
SCK Output
CPOL = 0
CPHA = 0
CPOL = 1
CPHA = 1
SCK Output
CPOL = 0
CPHA = 1
CPOL = 1
t w (SCKH) t r (SCK)
t su(MI ) t w (SCKL) t f (SCK)
t h(M )
t v(MO ) t h(MO )
184118
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Electrical characteristics
DS_MM32F003_q_Ver1.11
time)
1. Guaranteed based on test during characterization. Not tested in production.
2. Guaranteed by design. Not tested in production.
3. In this series of products, VREF+ is internally connected to DDA ,VREF− is internally
connected to SSA .
TS
RAIN < − RADC
fADC × C ADC × In(2N+2 )
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution) .
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Electrical characteristics
DS_MM32F003_q_Ver1.11
1. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of
the standard (non-robust) analog input pins should be avoided as this significantly
reduces the accuracy of the conversion being performed on another analog input. It is
recommended to add a Schottky diode (pin to ground) to standard analog pins which
may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
subsubsec 5.3.11 does not affect the ADC accuracy.
2. Guaranteed based on test during characterization. Not tested in production.
ET = Total unadjusted error: The maximum deviation between the actual and ideal trans-
mission curves.
EO = Offset error: The deviation between the first actual conversion and the first ideal
conversion.
EG = Gain error: The deviation between the last ideal transition and the last actual transi-
tion.
ED = Differential linearity error: The maximum deviation between the actual step and the
ideal value.
EL = Integral linearity error: The maximum deviation between any actual conversion and
the associated line of the endpoint.
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Electrical characteristics
DS_MM32F003_q_Ver1.11
Parasi c
capacitance
439454
VDDA
VDDA
1 µF // 10 nF
VSSA
澳
326818
Figure 20. Power supply and reference power supply decoupling circuit
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Electrical characteristics
DS_MM32F003_q_Ver1.11
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Package information
DS_MM32F003_q_Ver1.11
6 Package information
Package information
A2
D
A
e A1
A3
K
b
C2
R c1
E2
E
b H
1
L
20
L
PIN 1 Identifier
D2
926545
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Package information
DS_MM32F003_q_Ver1.11
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Package information
DS_MM32F003_q_Ver1.11
20 11
E1
c
1 10
PIN1
IDENTIFICATION
SEATING
PLANE
aaa C 0.25 mm
C GAUGE PLANE
A A2
k
b e L
A1
L1
618013
Figure 22. TSSOP20 - 20-lead thin shrink small outline package outline
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Package information
DS_MM32F003_q_Ver1.11
Millimeters
Symbol
Min Typ Max
e 0.65
L 0.45 0.60 0.75
L1 1.00
N Number of pins = 20
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Revision history
DS_MM32F003_q_Ver1.11
7 Revision history
Revision history
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