BTS 730

PWM Power Unit

The device allows continuous power control for lamps,LEDs or

inductive loads.

• Highside switch
• Overtemperatur protection
• Short circuit / overload protection through pulse width
reduction and overload shutdown
• Load dump protection
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Reverse battery protection 1)
• Timing frequency adjustable
• Controlled switching rise and fall times
• Maximum current internally limited
• Protection against loss of GND 2)
• Electrostatic discharge (ESD) protection
• Package: P-DSO-20-6 (SMD)
Note: Switching frequency is programmed with an external capacitor.

Type Ordering Code Marking Package

BTS730 Q67060-S7007-A2 - P-DSO-20-6

Maximum Ratings
Parameter Symbol Values Unit
Active overvoltage prodection Vbb (AZ) >40 V
Short circuit current ISC self-limited -
Input current (DC) ICt 2 mA
Pin1 (Ct) and pin19 (VC) IVC 2 mA
Operating temperature range Tj -40...+150 °C
Storage temperature range Tstg -50...+150
3)
Power dissipation Ta=25°C Ptot 3 W
Ta=85°C 2 W
3)
Thermal resistance chip-case Rth JC ≤ 35 K/W
chip-ambient Rth JA ≤ 75

1)
With 150Ω resistor in signal GND connection.
2)
Potential between signal GND and load GND >0.5V
3) 2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm (one layer,70µm thick) copper area for Vbb
conection, PCB is vertical without air blowing.

Semiconductor Group 1 12.96

 BTS 730

Block Diagram

Over / Under-
Overvoltage Temperature
voltage
Prodtection Detection Sensor (4,5,6,7)
(14,15,16,17)
Vbb

Pump and
Timing Pulse - width
Logic Current
Generator Comparator
Limiting

Voltage
Regulator

(18) (1) (20) (19) (2) (3) (8,9,10,11,12,13)

GND Ct VREF VC CB1 CB2 OUT

Timing
Cap. Bootstrap
68nF 25k Capacitor
22nF

Signal GND Load GND

Pin Definitions and Funktions Pin Configuration (top view)

Pin Symbol Funktions Ct 1 20 VREF
1 Ct Timing capacitor %
for frequency CB1 2 19 VC
2 CB1 Bootstrap capacitor CB2 3 18 GND
3 CB2 Vbb 4 17 Vbb
4,5,6,7 Vbb Supply voltage Vbb 5 16 Vbb
14,15,16,1 (Leadframe connected) Vbb 6 15 Vbb
7 Vbb 7 14 Vbb
8,9,10 OUT Output OUT 8 13 OUT
11,12,13 OUT 9 12 OUT
18 GND Ground OUT 10 11 OUT
19 VC Voltage for PWM-Control
20 VREF Reference Voltage

Semiconductor Group 2
 BTS 730

Electrical Characteristics
i
at Tj = 25 C, unless otherwise specified.CBootstrap = 22nF

Parameter Symbol Values Unit

min. typ. max.
On-state resistance RON - - 70 mΩ
IL=3A, Vbb=12V
Operating voltage Vbb 5.9 1) 16.9 2) V
Tj = -40 ...+150 C i
Nominal current, IL-ISO 3 - - A
calculated value
ISO-standard:
Vbb-VOUT ≤ 0.5V, Tc=85°C
Load current limit ILLim - 20 - A
Vbb-VOUT> 1V
Undervoltage shutdown Vbb(LOW) 3 4.2 5.4 V
IL = 3A
Overvoltage shutdown Vbb(HI) 17 18 19 V
IL = 3A
Max.output voltage (RMS) VRMSmax 12 - 14 V
IL = 3A, Vbb > 12 V
Reference voltage VREF 2 3 V
IREF= 10mA
Reference current IREF - 150 - mA
pin 18 (GND) to pin 20 (VREF) short
Internal current IR - 5 mA
consumption during
operation, measured in PWM gap
Bootstrap voltage, pin 2 VB - 10 - V
(CB1) to pin 3 (CB2)
Vbb = 12 V,
PWM frequency fPWM 50 - 100 Hz
Tc = -40 ... +150 °C, Ct = 68 nF
Max. pulse duty factor Dimax 95 98 - %
IL = 3A, VC=0V , (50% VOUT)
Min. pulse duty factor Dimin - 8 14 %
IL = 3A, VC=0V , (50% VOUT)
Slew rate "on" du/dt(on) 20 - 120 mV/µs
10 ... 90% IOUT
Slew rate "off" du/dt(off) 20 - 120 mV/µs
90 ... 10% IOUT
Thermal overload trip Tj 150 - - °C
temperature
1)
Note: undervoltage shutdown
2)
Note: overvoltage shutdown

Semiconductor Group 3
 BTS 730

Circuits

Analog Logic-InputVC (19)

V REF (20) Voltage Regulator

2µ A
V (19) Pulse-width Comparator
C
6V
GND (18) max. 2mA

Triangular WaveformGenerator Input C t (1)

V bb
6µ A
C (1) Timing Generator
t
6V
GND (18) max. 2mA

Voltage Sensor (typ)

Undervoltage Sensor Overvoltage Sensor

+V bb +V bb

Signal to the Signal to the

V bb < 4.2 V V bb > 18 V
logic unit logic unit

GND GND

Semiconductor Group 4
 BTS 730

Application Note

Dimming of dashboard lighting

+ V bb
4,5,6,7
14,15,16,17 220nF

20 V bb
VREF

BTS730
25 k O
19
VC
GND Ct C B1 C B2 OUT
18 1 2 3 8,9,10
68nF 11,12,13

22nF
Load
150 O

150 O Resistor for reverse battery and load dump prodection

Package Outline P-DSO-20-6

Dimensions in mm

Semiconductor Group 5
 BTS 730

Typ.on-state resistance Typ. Load current limit

mΩ R ON= f (T C ) A I LLim = f (T C )
140 30

120
25

100

20

80

15
60

40 10

20 5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TC °C
TC °C

Typ. undervoltage shutdown Typ. overvoltage shutdown

V V bb(LOW) = f (T C) V bb(HI) = f (T C )
V
6,0 20,0

5,5 19,5

5,0
19,0

4,5
18,5

4,0
18,0

3,5
17,5

3,0
17,0
-50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150

TC °C
TC °C

Semiconductor Group 6
 BTS 730

Typ. min. puls duty factor Typ. max. puls duty factor
% D im in = f (T C ) % D im ax = f (T C )
15 100

14

13 99

12

11 98

10

9 97

7 96

5 95
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TC °C TC °C

Typ. PWM Frequency Typ. max. output voltage

Hz f PWM = f (T C ) V V RMSm ax = f (T C ), Vbb > 12V
100 14,0

90
13,5

80

13,0

70

12,5
60

50 12,0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TC °C TC °C

Semiconductor Group 7
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.