Pin Configuration (CTR: 50~600% at IF =5mA, VCE =5V) 1, 3. Anode • High isolation voltage between input 2, 4. Cathode and output (Viso=5000 V rms ) 5, 7. Emitter • Compact small outline package 6, 8. Collector • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CSA approved • CQC approved
Description The EL827series devices each of consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 8-pin DIP package and available in wide-lead spacing and SMD option.
Applications • Programmable controllers • System appliances, measuring instruments • Telecommunication equipments • Home appliances, such as fan heaters, etc. 8 • Signal transmission between circuits of different potentials and impedances 7
Forward current IF 60 mA Peak forward current (1us, pulse) IFP 1 A Input Reverse voltage VR 6 V
Power dissipation PD 100 mW
Power dissipation PC 150 mW
Collector current IC 50 mA Output Collector-Emitter voltage VCEO 80 V Emitter-Collector voltage VECO 7 V Total power dissipation PTOT 200 mW *1 Isolation voltage VISO 5000 V rms Operating temperature TOPR -55 to 110 °C Storage temperature TSTG -55 to 125 °C *2 Soldering temperature TSOL 260 °C
Notes: *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3, 4are shorted together, and pins 5, 6 & 7, 8 are shorted together.
Input Parameter Symbol Min. Typ.* Max. Unit Condition
Forward Voltage VF - 1.2 1.4 V IF = 20mA
Reverse Current IR - - 10 µA VR = 4V Input capacitance Cin - 30 250 pF V = 0, f = 1kHz
Output Parameter Symbol Min. Typ.* Max. Unit Condition
Collector-Emitter dark ICEO - - 100 nA VCE = 20V, IF = 0mA current Collector-Emitter BVCEO 80 - - V IC = 0.1mA breakdown voltage Emitter-Collector BVECO 7 - - V IE = 0.1mA breakdown voltage
Transfer Characteristics
Parameter Symbol Min Typ. Max. Unit Condition
Current Transfer ratio CTR 50 - 600 % IF = 5mA ,VCE = 5V
Collector-Emitter VCE(sat) - 0.1 0.2 V IF = 20mA ,IC = 1mA saturation voltage VIO = 500Vdc, Isolation resistance RIO 5×1010 - - Ω 40~60% R.H. Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz VCE = 5V, IC = 2mA Cut-off frequency fc - 80 - kHz RL = 100Ω, -3dB Rise time tr - 3 18 µs VCE = 2V, IC = 2mA, Fall time tf - 4 18 µs RL = 100Ω
1. Soldering Condition 1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile
Note: Reference: IPC/JEDEC J-STD-020D
Preheat Temperature min (Tsmin) 150 °C Temperature max (Tsmax) 200°C Time (Tsmin to Tsmax) (ts) 60-120 seconds Average ramp-up rate (Tsmax to Tp) 3 °C/second max
Other Liquidus Temperature (TL) 217 °C Time above Liquidus Temperature (t L) 60-100 sec Peak Temperature (TP) 260°C Time within 5 °C of Actual Peak Temperature: TP - 5°C 30 s Ramp- Down Rate from Peak Temperature 6°C /second max. Time 25°C to peak temperature 8 minutes max. Reflow times 3 times
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.
