LF353-N

www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

Check for Samples: LF353-N

1FEATURES DESCRIPTION
•
2 Internally Trimmed Offset Voltage: 10 mV These devices are low cost, high speed, dual JFET
input operational amplifiers with an internally trimmed
• Low Input Bias Current: 50pA input offset voltage (BI-FET II technology). They
• Low Input Noise Voltage: 25 nV/√Hz require low supply current yet maintain a large gain
• Low Input Noise Current: 0.01 pA/√Hz bandwidth product and fast slew rate. In addition, well
matched high voltage JFET input devices provide
• Wide Gain Bandwidth: 4 MHz
very low input bias and offset currents. The LF353-N
• High Slew Rate: 13 V/μs is pin compatible with the standard LM1558 allowing
• Low Supply Current: 3.6 mA designers to immediately upgrade the overall
• High Input Impedance: 1012Ω performance of existing LM1558 and LM358 designs.
• Low Total Harmonic Distortion : ≤0.02% These amplifiers may be used in applications such as
high speed integrators, fast D/A converters, sample
• Low 1/f Noise Corner: 50 Hz
and hold circuits and many other circuits requiring low
• Fast Settling Time to 0.01%: 2 μs input offset voltage, low input bias current, high input
impedance, high slew rate and wide bandwidth. The
devices also exhibit low noise and offset voltage drift.

Typical Connection

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

Simplified Schematic

Figure 1. 1/2 Dual

Dual-In-Line Package
Top View

Figure 2. 8-Pin SOIC (See D Package)

8-Pin PDIP (See P Package)

2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 LF353-N
www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings (1) (2)

Supply Voltage ±18V
Power Dissipation See (3)
Operating Temperature Range 0°C to +70°C
Tj(MAX) 150°C
Differential Input Voltage ±30V
Input Voltage Range (4) ±15V
Output Short Circuit Duration Continuous
Storage Temperature Range −65°C to +150°C
Lead Temp. (Soldering, 10 sec.) 260°C
Soldering Information: Dual-In-Line Package Soldering (10 sec.) 260°C
Small Outline Package Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
ESD Tolerance (5) 1000V
θJA D Package TBD

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115°C/W typ junction to ambient
for the P package, and 160°C/W typ junction to ambient for the D package.
(4) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(5) Human body model, 1.5 kΩ in series with 100 pF.

Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 3

Product Folder Links: LF353-N
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

DC Electrical Characteristics
LF353-N
Symbol Parameter Conditions Units
MIn Typ Max
VOS Input Offset Voltage RS=10kΩ, TA=25°C 5 10 mV
Over Temperature
13 mV
ΔVOS/ΔT Average TC of Input Offset Voltage RS=10 kΩ 10 μV/°C
IOS Input Offset Current Tj=25°C (1) (2) 25 100 pA
Tj≤70°C 4 nA
IB Input Bias Current Tj=25°C (1) (2) 50 200 pA
Tj≤70°C 8 nA
RIN Input Resistance Tj=25°C 1012 Ω
AVOL Large Signal Voltage Gain VS=±15V, TA=25°C 25 100 V/mV
VO=±10V, RL=2 kΩ
Over Temperature 15 V/mV
VO Output Voltage Swing VS=±15V, RL=10kΩ ±12 ±13.5 V
VCM Input Common-Mode Voltage VS=±15V ±11 +15 V
Range −12 V
CMRR Common-Mode Rejection Ratio RS≤ 10kΩ 70 100 dB
PSRR Supply Voltage Rejection Ratio See (3) 70 100 dB
IS Supply Current 3.6 6.5 mA

(1) These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.
(2) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation
the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
(3) Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with
common practice. VS = ±6V to ±15V.

AC Electrical Characteristics (1)

LF353-N
Symbol Parameter Conditions Units
Min Typ Max
Amplifier to Amplifier Coupling TA=25°C, f=1 Hz−20 kHz
−120 dB
(Input Referred)
SR Slew Rate VS=±15V, TA=25°C 8.0 13 V/μs
GBW Gain Bandwidth Product VS=±15V, TA=25°C 2.7 4 MHz
en Equivalent Input Noise Voltage TA=25°C, RS=100Ω, f=1000 Hz 16 nV/√Hz
in Equivalent Input Noise Current Tj=25°C, f=1000 Hz 0.01 pA/√Hz
THD Total Harmonic Distortion AV=+10, RL=10k, VO=20Vp−p,
<0.02 %
BW=20 Hz-20 kHz

(1) These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.

4 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 LF353-N
www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

Typical Performance Characteristics

Input Bias Current Input Bias Current

Figure 3. Figure 4.

Supply Current Positive Common-Mode Input Voltage Limit

Figure 5. Figure 6.

Negative Common-Mode Input Voltage Limit Positive Current Limit

Figure 7. Figure 8.

Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 5

Product Folder Links: LF353-N
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

Typical Performance Characteristics (continued)

Negative Current Limit Voltage Swing

Figure 9. Figure 10.

Output Voltage Swing Gain Bandwidth

Figure 11. Figure 12.

Bode Plot Slew Rate

Figure 13. Figure 14.

6 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 LF353-N
www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

Typical Performance Characteristics (continued)

Distortion
vs.
Frequency Undistorted Output Voltage Swing

Figure 15. Figure 16.

Open Loop Frequency Response Common-Mode Rejection Ratio

Figure 17. Figure 18.

Power Supply Rejection Ratio Equivalent Input Noise Voltage

Figure 19. Figure 20.

Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 7

Product Folder Links: LF353-N
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

Typical Performance Characteristics (continued)

Open Loop Voltage Gain (V/V) Output Impedance

Figure 21. Figure 22.

Inverter Settling Time

Figure 23.

8 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 LF353-N
www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

Pulse Response

Figure 24. Small Signaling Inverting Figure 25. Large Signal Inverting

Figure 26. Small Signal Non-Inverting Figure 27. Large Signal Non-Inverting

Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 9

Product Folder Links: LF353-N
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

Figure 28. Current Limit (RL = 100Ω)

10 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 LF353-N
www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

APPLICATION HINTS

These devices are op amps with an internally trimmed input offset voltage and JFET input devices (BI-FET II).
These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for
clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large
increase in input current. The maximum differential input voltage is independent of the supply voltages. However,
neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to
flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will force the output to a high state, potentially
causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force
the amplifier output to a high state. In neither case does a latch occur since raising the input back within the
common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if
both inputs exceed the limit, the output of the amplifier will be forced to a high state.
The amplifiers will operate with a common-mode input voltage equal to the positive supply; however, the gain
bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings
to within 3V of the negative supply, an increase in input offset voltage may occur.
Each amplifier is individually biased by a zener reference which allows normal circuit operation on ±6V power
supplies. Supply voltages less than these may result in lower gain bandwidth and slew rate.
The amplifiers will drive a 2 kΩ load resistance to ±10V over the full temperature range of 0°C to +70°C. If the
amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the
negative voltage swing and finally reach an active current limit on both positive and negative swings.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in
polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through
the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed
unit.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in
order to ensure stability. For example, resistors from the output to an input should be placed with the body close
to the input to minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the
capacitance from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed
loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less
than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the
input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor
and the resistance it parallels is greater than or equal to the original feedback pole time constant.

Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 11

Product Folder Links: LF353-N
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

Detailed Schematic

12 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 LF353-N
www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

Typical Applications

Three-Band Active Tone Control

(1) All controls flat.

(2) Bass and treble boost, mid flat.
(3) Bass and treble cut, mid flat.
(4) Mid boost, bass and treble flat.
(5) Mid cut, bass and treble flat.
• All potentiometers are linear taper
• Use the LF347 Quad for stereo applications

Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 13

Product Folder Links: LF353-N
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

Improved CMRR Instrumentation Amplifier

(1)

Fourth Order Low Pass Butterworth Filter

(2)

14 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 LF353-N
www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

Fourth Order High Pass Butterworth Filter

(3)

Ohms-to-Volts Converter

(4)

Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 15

Product Folder Links: LF353-N
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com

REVISION HISTORY

Changes from Revision E (March 2013) to Revision F Page

• Changed layout of National Data Sheet to TI format .......................................................................................................... 15

16 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LF353-N

 IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2013, Texas Instruments Incorporated