TL082 Wide Bandwidth Dual JFET Input Operational Amplifier: Features Description
TL082 Wide Bandwidth Dual JFET Input Operational Amplifier: Features Description
TL082 Wide Bandwidth Dual JFET Input Operational Amplifier: Features Description
1FEATURES DESCRIPTION
•
23 Internally Trimmed Offset Voltage: 15 mV These devices are low cost, high speed, dual JFET
input operational amplifiers with an internally trimmed
• Low Input Bias Current: 50 pA input offset voltage ( BI-FET II™ technology). They
• Low Input Noise Voltage: 16nV/√Hz require low supply current yet maintain a large gain
• Low Input Noise Current: 0.01 pA/√Hz bandwidth product and fast slew rate. In addition, well
matched high voltage JFET input devices provide
• Wide Gain Bandwidth: 4 MHz
very low input bias and offset currents. The TL082 is
• High Slew Rate: 13 V/μs pin compatible with the standard LM1558 allowing
• Low Supply Current: 3.6 mA designers to immediately upgrade the overall
• High Input Impedance: 1012Ω performance of existing LM1558 and most LM358
designs.
• Low Total Harmonic Distortion: ≤0.02%
These amplifiers may be used in applications such as
• Low 1/f Noise Corner: 50 Hz
high speed integrators, fast D/A converters, sample
• Fast Settling Time to 0.01%: 2 μs and hold circuits and many other circuits requiring low
input offset voltage, low input bias current, high input
impedance, high slew rate and wide bandwidth. The
devices also exhibit low noise and offset voltage drift.
Typical Connection
Connection Diagram
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 BI-FET II is a trademark of dcl_owner.
3 All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TL082-N
SNOSBW5C – APRIL 1998 – REVISED APRIL 2013 www.ti.com
Simplified Schematic
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1) (2)
Absolute Maximum Ratings
Supply Voltage ±18V
(3) (4)
Power Dissipation
Operating Temperature Range 0°C to +70°C
Tj(MAX) 150°C
Differential Input Voltage ±30V
(5)
Input Voltage Range ±15V
Output Short Circuit Duration Continuous
Storage Temperature Range −65°C to +150°C
Lead Temp. (Soldering, 10 seconds) 260°C
ESD rating to be determined.
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) The power dissipation limit, however, cannot be exceeded.
(4) For operating at elevated temperature, the device must be derated based on a thermal resistance of 115°C/W junction to ambient for the
P0008E package.
(5) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(1)
DC Electrical Characteristics
TL082C
Symbol Parameter Conditions Units
Min Typ Max
VOS Input Offset Voltage RS = 10 kΩ, TA = 25°C 5 15 mV
Over Temperature 20 mV
ΔVOS/ΔT Average TC of Input Offset Voltage RS = 10 kΩ 10 μV/°C
(1) (2)
IOS Input Offset Current Tj = 25°C, 25 200 pA
Tj ≤ 70°C 4 nA
(1) (2)
IB Input Bias Current Tj = 25°C, 50 400 pA
Tj ≤ 70°C 8 nA
RIN Input Resistance Tj = 25°C 1012 Ω
AVOL Large Signal Voltage Gain VS = ±15V, TA = 25°C, 25 100 V/mV
VO = ±10V, RL = 2 kΩ
Over Temperature 15 V/mV
VO Output Voltage Swing VS = ±15V, RL = 10 kΩ ±12 ±13.5 V
VCM Input Common-Mode Voltage VS = ±15V ±11 +15 V
Range
−12 V
CMRR Common-Mode Rejection Ratio RS ≤ 10 kΩ 70 100 dB
(3)
PSRR Supply Voltage Rejection Ratio 70 100 dB
IS Supply Current 3.6 5.6 mA
(1) These specifications apply for VS = ±15V and 0°C ≤TA ≤ +70°C. VOS, IB and IOS are measured at VCM = 0.
(2) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation
the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj = TA + θjA PD where θjA is
the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
(3) Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with
common practice. VS = ±6V to ±15V.
(1)
AC Electrical Characteristics
TL082C
Symbol Parameter Conditions Units
Min Typ Max
Amplifier to Amplifier Coupling TA = 25°C, f = 1Hz-20 kHz −120 dB
(Input Referred)
SR Slew Rate VS = ±15V, TA = 25°C 8 13 V/μs
GBW Gain Bandwidth Product VS = ±15V, TA = 25°C 4 MHz
en Equivalent Input Noise Voltage TA = 25°C, RS = 100Ω, 25 nV/√Hz
f = 1000 Hz
in Equivalent Input Noise Current Tj = 25°C, f = 1000 Hz 0.01 pA/√Hz
THD Total Harmonic Distortion AV = +10, RL = 10k, <0.02 %
VO = 20 Vp − p,
BW = 20 Hz−20 kHz
(1) These specifications apply for VS = ±15V and 0°C ≤TA ≤ +70°C. VOS, IB and IOS are measured at VCM = 0.
Figure 2. Figure 3.
Figure 4. Figure 5.
Figure 6. Figure 7.
Figure 8. Figure 9.
Figure 22.
Pulse Response
Small Signal Inverting Large Signal Inverting
Figure 27.
APPLICATION HINTS
These devices are op amps with an internally trimmed input offset voltage and JFET input devices (BI-FET II).
These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for
clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large
increase in input current. The maximum differential input voltage is independent of the supply voltages. However,
neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to
flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will cause a reversal of the phase to the output and
force the amplifier output to the corresponding high or low state. Exceeding the negative common-mode limit on
both inputs will force the amplifier output to a high state. In neither case does a latch occur since raising the input
back within the common-mode range again puts the input stage and thus the amplifier in a normal operating
mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if
both inputs exceed the limit, the output of the amplifier will be forced to a high state.
The amplifiers will operate with a common-mode input voltage equal to the positive supply; however, the gain
bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings
to within 3V of the negative supply, an increase in input offset voltage may occur.
Each amplifier is individually biased by a zener reference which allows normal circuit operation on ±6V power
supplies. Supply voltages less than these may result in lower gain bandwidth and slew rate.
The amplifiers will drive a 2 kΩ load resistance to ±10V over the full temperature range of 0°C to +70°C. If the
amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the
negative voltage swing and finally reach an active current limit on both positive and negative swings.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in
polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through
the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed
unit.
Because these amplifiers are JFET rather than MOSFET input op amps they do not require special handling.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in
order to ensure stability. For example, resistors from the output to an input should be placed with the body close
to the input to minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the
capacitance from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed
loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less
than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the
input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor
and the resistance it parallels is greater than or equal to the original feedback pole time constant.
Detailed Schematic
Typical Applications
REVISION HISTORY
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PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
• Automotive: TL082-Q1
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 2
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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