IMZC120R012M2H

CoolSiC™ 1200 V SiC MOSFET G2

Final datasheet
CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
PG-TO247-4-U07 (- 17)
Features
• VDSS = 1200 V at Tvj = 25°C
• IDDC = 91 A at TC = 100°C
• RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Overload operation up to Tvj = 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage, VGS(th) = 4.2 V
2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.

• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
• Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder
Potential applications
• General purpose drives (GPD)
• EV Charging
• Online UPS/Industrial UPS
• Solar power optimizer
• String inverter
• Energy Storage Systems (ESS)
• Welding
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description
1 – drain
2 – source
3 – Kelvin sense contact
4 – gate
Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction

Type Package Marking

IMZC120R012M2H PG-TO247-4-U07 12M2H012

Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00
www.infineon.com 2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
Table of contents

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3 Body diode (MOSFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Datasheet 2 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
1 Package

1 Package
Table 1 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Storage temperature Tstg -55 150 °C
Soldering temperature Tsold wave soldering only allowed at leads 1.6 260 °C
mm (0.063 in.) from case for 10 s
Mounting torque M M3 screw, Maximum of mounting processes: 0.6 Nm
3
Thermal resistance, Rth(j-a) 62 K/W
junction-ambient
MOSFET/body diode Rth(j-c) 0.24 0.31 K/W
thermal resistance,
junction-case

2 MOSFET
Table 2 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V
Continuous DC drain IDDC VGS = 18 V Tc = 25 °C 129 A
current for Rth(j-c,max),
Tc = 100 °C 91
limited by Tvj(max)
Peak drain current, tp IDM VGS = 18 V 273 A
limited by Tvj(max)1)
Gate-source voltage, max. VGS tp ≤ 0.5 µs, D < 0.01 -10...25 V
transient voltage
Gate-source voltage, max. VGS -7...23 V
static voltage2)
Avalanche energy, single EAS ID = 57 A, VDD = 50 V, L = 0.4 mH, 712 mJ
pulse Tvj(start) = 25 °C
Avalanche energy, EAR ID = 57 A, VDD = 50 V, L = 2.2 µH, 3.56 mJ
repetitive Tvj(start) = 25 °C
Short-circuit withstand tSC VDD ≤ 800 V, VDS,peak < 1200 V, VGS(on) = 15 V, 2 µs
time Tvj(start) = 25 °C
Power dissipation, limited Ptot Tc = 25 °C 480 W
by Tvj(max)
Tc = 100 °C 240
1) Verified by design.
2) The maximum gate-source voltage in the application design should be in accordance to IPC-9592B.

Datasheet 3 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
2 MOSFET

Table 3 Recommended values

Parameter Symbol Note or test condition Values Unit
Recommended turn-on VGS(on) 15...18 V
gate voltage
Recommended turn-off VGS(off) -5...0 V
gate voltage

Table 4 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Drain-source on-state RDS(on) ID = 57 A Tvj = 25 °C, 12 mΩ
resistance VGS(on) = 18 V
Tvj = 150 °C, 25 33
VGS(on) = 18 V
Tvj = 175 °C, 29
VGS(on) = 18 V
Tvj = 25 °C, 15
VGS(on) = 15 V
Gate-source threshold VGS(th) ID = 17.8 mA, VDS = VGS Tvj = 25 °C 3.5 4.2 5.1 V
voltage (tested after 1 ms pulse
Tvj = 175 °C 3.2
at VGS = 20 V)
Zero gate-voltage drain IDSS VDS = 1200 V, VGS = 0 V Tvj = 25 °C 500 µA
current
Tvj = 175 °C 9
Gate leakage current IGSS VDS = 0 V VGS = 23 V 120 nA
VGS = -10 V -120
Forward transconductance gfs ID = 57 A, VDS = 20 V 38 S
Internal gate resistance RG,int f = 1 MHz, VAC = 25 mV 4 Ω
Input capacitance Ciss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 4050 pF
Output capacitance Coss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 176 pF
Reverse transfer Crss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 15 pF
capacitance
Coss stored energy Eoss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 74 µJ
Output charge Qoss VDD = 800 V, VGS = 0 V, f = 100 kHz, 275 nC
VAC = 25 mV, Calculated by Coss*f(VDS) @100
kHz
Effective output Co(er) VDD = 0...800 V, VGS = 0 V 231 pF
capacitance, energy
related
Effective output Co(tr) ID = constant, VDD = 0...800 V, VGS = 0 V 344 pF
capacitance, time related
(table continues...)

Datasheet 4 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
2 MOSFET

Table 4 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Total gate charge QG VDD = 800 V, ID = 57 A, VGS = 0/18 V, turn-on 124 nC
pulse
Plateau gate charge QGS(pl) VDD = 800 V, ID = 57 A, VGS = 0/18 V, turn-on 26 nC
pulse
Gate-to-drain charge QGD VDD = 800 V, ID = 57 A, VGS = 0/18 V, turn-on 34 nC
pulse
Turn-on delay time td(on) VDD = 800 V, ID = 57 A, Tvj = 25 °C 9.5 ns
VGS = 0/18 V,
Tvj = 175 °C 8.6
RGS(on) = 2.3 Ω,
RGS(off) = 2.3 Ω,
Lσ = 18 nH, diode: body
diode at VGS = 0 V
Rise time tr VDD = 800 V, ID = 57 A, Tvj = 25 °C 8.6 ns
VGS = 0/18 V,
Tvj = 175 °C 8
RGS(on) = 2.3 Ω,
RGS(off) = 2.3 Ω,
Lσ = 18 nH, diode: body
diode at VGS = 0 V
Turn-off delay time td(off) VDD = 800 V, ID = 57 A, Tvj = 25 °C 21 ns
VGS = 0/18 V,
Tvj = 175 °C 36.8
RGS(on) = 2.3 Ω,
RGS(off) = 2.3 Ω,
Lσ = 18 nH, diode: body
diode at VGS = 0 V
Fall time tf VDD = 800 V, ID = 57 A, Tvj = 25 °C 11.7 ns
VGS = 0/18 V,
Tvj = 175 °C 13.8
RGS(on) = 2.3 Ω,
RGS(off) = 2.3 Ω,
Lσ = 18 nH, diode: body
diode at VGS = 0 V
Turn-on energy Eon VDD = 800 V, ID = 57 A, Tvj = 25 °C 422 µJ
VGS = 0/18 V,
Tvj = 175 °C 789
RGS(on) = 2.3 Ω,
RGS(off) = 2.3 Ω,
Lσ = 18 nH, diode: body
diode at VGS = 0 V
Turn-off energy Eoff VDD = 800 V, ID = 57 A, Tvj = 25 °C 210 µJ
VGS = 0/18 V,
Tvj = 175 °C 362
RGS(on) = 2.3 Ω,
RGS(off) = 2.3 Ω,
Lσ = 18 nH, diode: body
diode at VGS = 0 V
(table continues...)

Datasheet 5 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
3 Body diode (MOSFET)

Table 4 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Total switching energy1) Etot VDD = 800 V, ID = 57 A, Tvj = 25 °C 942 µJ
VGS = 0/18 V,
Tvj = 175 °C 1921
RGS(on) = 2.3 Ω,
RGS(off) = 2.3 Ω,
Lσ = 18 nH, diode: body
diode at VGS = 0 V
Virtual junction Tvj -55 175 °C
temperature
Virtual junction Tvj(over) overload, cumulative max. 100 h2) 200 °C
temperature

up to 5000 cycles. Maximum ΔT limited to 100 K.

1) including Efr
2)

Note: The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement
test setup and package.
Characteristics at Tvj = 25°C, unless otherwise specified.

3 Body diode (MOSFET)

Table 5 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V
Peak reverse drain current, ISM VGS = 0 V 273 A
tp limited by Tvj(max)

Table 6 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Drain-source reverse VSD ISD = 57 A, VGS = 0 V Tvj = 25 °C 4.2 5.5 V
voltage
Tvj = 100 °C 4.11
Tvj = 175 °C 4.05
MOSFET forward recovery Qfr VDD = 800 V, ISD = 57 A, Tvj = 25 °C 0.2 µC
charge VGS = 0 V, RGS(on) = 2.3 Ω,
Tvj = 175 °C 1.21
Qfr includes also QC
MOSFET peak forward Ifrm VDD = 800 V, ISD = 57 A, Tvj = 25 °C 31.7 A
recovery current VGS = 0 V, RGS(on) = 2.3 Ω,
Tvj = 175 °C 81.8
Qfr includes also QC
(table continues...)

Datasheet 6 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
3 Body diode (MOSFET)

Table 6 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
MOSFET forward recovery Efr VDD = 800 V, ISD = 57 A, Tvj = 25 °C 310 µJ
energy VGS = 0 V, RGS(on) = 2.3 Ω,
Tvj = 175 °C 770
Qfr includes also QC
Virtual junction Tvj -55 175 °C
temperature
Virtual junction Tvj(over) overload, cumulative max. 100 h1) 200 °C
temperature
1) up to 5000 cycles. Maximum ΔT limited to 100 K.

Datasheet 7 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
4 Characteristics diagrams

4 Characteristics diagrams
Reverse bias safe operating area (RBSOA) Power dissipation as a function of case temperature
IDS = f(VDS) Ptot = f(Tc)
Tvj ≤ 200 °C, VGS = 0/18 V, Tc = 25 °C
350 800

300 700

600
250

500
200
400
150
300

100
200

50 100

0 0
0 200 400 600 800 1000 1200 1400 0 25 50 75 100 125 150 175

Maximum DC drain to source current as a function of Maximum source to drain current as a function of case
case temperature limited by bond wire temperature limited by bond wire
IDS = f(Tc) ISD = f(Tc)
VGS = 0 V
150 120

135 110

100
120
90
105
80
90 70

75 60

60 50

40
45
30
30
20
15 10

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

Datasheet 8 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
4 Characteristics diagrams

Typical transfer characteristic Typical gate-source threshold voltage as a function of

IDS = f(VGS) junction temperature
VDS = 20 V, tp = 20 µs VGS(th) = f(Tvj)
ID = 17.8 mA
1400 6

1200
5

1000
4

800
3
600

2
400

1
200

0 0
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 175 200

Typical output characteristic, VGS as parameter Typical output characteristic, VGS as parameter
IDS = f(VDS) IDS = f(VDS)
Tvj = 25 °C, tp = 20 µs Tvj = 175 °C, tp = 20 µs
560 560

490 490

420 420

350 350

280 280

210 210

140 140

70 70

0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

Datasheet 9 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
4 Characteristics diagrams

Typical on-state resistance as a function of junction Typical gate charge

temperature VGS = f(QG)
RDS(on) = f(Tvj) ID = 57 A, VDS = 800 V
ID = 57 A
40 18

35 16

14
30

12
25
10
20
8
15
6

10
4

5
2

0 0
-50 -25 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140

Typical capacitance as a function of drain-source Typical reverse drain voltage as function of junction
voltage temperature
C = f(VDS) VSD = f(Tvj)
f = 100 kHz, VGS = 0 V ISD = 57 A, VGS = 0 V
10000 6

1000 4

100 2

10 0
1 10 100 1000 -50 -25 0 25 50 75 100 125 150 175 200

Datasheet 10 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
4 Characteristics diagrams

Typical reverse drain current as function of reverse Typical reverse drain current as function of reverse
drain voltage, VGS as parameter drain voltage, VGS as parameter
ISD = f(VSD) ISD = f(VSD)
Tvj = 25 °C, tp = 20 µs Tvj = 175 °C, tp = 20 µs
240 240

210 210

180 180

150 150

120 120

90 90

60 60

30 30

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Typical switching energy as a function of junction Typical switching energy as a function of drain
temperature, test circuit in Fig. F, 2nd device own current, test circuit in Fig. F, 2nd device own body
body diode: VGS = 0V diode: VGS =0 V
E = f(Tvj) E = f(ID)
VGS = 0/18 V, ID = 57 A, RG,ext = 2.3 Ω, VDD = 800 V VGS = 0/18 V, Tvj = 175 °C, RG,ext = 2.3 Ω, VDD = 800 V
800 1800

700 1600

1400
600

1200
500
1000
400
800
300
600

200
400

100
200

0 0
25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 110

Datasheet 11 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
4 Characteristics diagrams

Typical switching energy as a function of gate Typical switching times as a function of gate
resistance, test circuit in Fig. F, 2nd device own body resistance, test circuit in Fig. F, 2nd device own body
diode: VGS = 0 V diode: VGS = 0 V
E = f(RG,ext) t = f(RG,ext)
VGS = 0/18 V, ID = 57 A, Tvj = 175 °C, VDD = 800 V VGS = 0/18 V, ID = 57 A, Tvj = 175 °C, VDD = 800 V
5500 350

5000
300
4500

4000 250

3500
200
3000

2500
150
2000

1500 100

1000
50
500

0 0
0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50

Typical reverse recovery charge as a function of Typical reverse recovery current as a function of
reverse drain current slope, test circuit in Fig. F, 2nd reverse drain current slope, test circuit in Fig. F, 2nd
device own body diode: VGS = 0 V device own body diode: VGS = 0 V
Qfr = f(-diSD/dt ) Ifrm = f(-diSD/dt )
VGS = 0/18 V, ISD = 57 A, VDD = 800 V VGS = 0/18 V, ISD = 57 A, VDD = 800 V
1.5 100

90

1.2 80

70

0.9 60

50

0.6 40

30

0.3 20

10

0.0 0
1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000

Datasheet 12 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
4 Characteristics diagrams

Typical switching energy as a function of dead time / Max. transient thermal impedance (MOSFET/diode)
blanking time, test circuit in Fig. F, 2nd device own Zth(j-c),max = f(tp)
body diode: VGS = 0 V
D = tp/T
E = f(tdead)
ID = 57 A, VGS = 0/18 V, Tvj = 175 °C, RG,ext = 2.3 Ω
VDD = 800 V
120 1

100

0.1
80

60
0.01

40

0.001
20

0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1E-6 1E-5 0.0001 0.001 0.01 0.1 1

Datasheet 13 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
5 Package outlines

5 Package outlines

PACKAGE - GROUP
NUMBER: PG-TO247-4-U07
MILLIMETERS MILLIMETERS
DIMENSIONS DIMENSIONS
MIN. MAX. MIN. MAX.
A 4.90 5.10 E 15.60 16.00
A1 1.90 2.10 E1 13.10 13.50
A2 1.50 1.70 E2 0.60 1.20
A3 2.16 2.36 E3 2.48 2.68
A4 2.31 2.51 E4 9.05 9.25
b 0.60 0.80 E5 3.97 4.17
b1 1.10 1.30 E6 1.80 2.20
b2 --- 0.15 e 5.08
b3 1.10 1.30 e1 2.79
b4 1.90 2.10 e2 2.54
c 0.50 0.70 K 3.50 ---
D 23.10 23.50 L 17.50 17.80
D1 16.25 16.85 L1 2.61 2.91
D2 0.97 1.37 N 4
D3 6.00 6.30 ØP1 7.00 7.40
D4 2.50 2.70 ØP 3.50 3.70
D5 2.30 2.70 ØU 1.40 1.80

Figure 1

Datasheet 14 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
6 Testing conditions

6 Testing conditions
VDS I,V
90%

diSD/dt

tfr = ta + tb
Qfr = Qa + Qb

ISD tfr
ta tb
10% t
VGS Qa Qb 10% Ifrm
td(on) td(off)
tr Ifrm
tf
ton toff VSD

Figure A. Definition of switching times

Figure B. Definition of body diode

switching characteristics
VGS,VDS
ID(t)
Q

VGS(on)

10% ID 10% ID
t
VDS(t)

VDS
QGS(pl) QG t, Q
QGD
Eof
offf = Eon =
t1 ʃ VDS *ID*dt*dt
t2
t3 ʃ VDS *ID*dt
*dt
t4

10% VDS 10% VDS

Figure D. Definition of QGD
t
t1 t2 t3 t4 ½Lσ

Figure C. Definition of switching losses

second
device L Cσ

VGS(off)
VDD
τ1/r1 τ2/r2 τn/rn
RG DUT
Tj(t)
p(t)
r1 r2 rn

½Lσ
TC =
M

= Figure F. Dynamic test circuit

Parasitic inductance Lσ,
Figure E. Thermal equivalent circuit Parasitic capacitor Cσ,

Figure 2

Datasheet 15 Revision 1.00

2024-09-27
IMZC120R012M2H
CoolSiC™ 1200 V SiC MOSFET G2
Revision history

Revision history
Document revision Date of release Description of changes
0.10 2024-09-06 Preliminary datasheet
1.00 2024-09-27 Final datasheet

Datasheet 16 Revision 1.00

2024-09-27
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.

Edition 2024-09-27 Important notice Please note that this product is not qualified
Published by The information given in this document shall in no according to the AEC Q100 or AEC Q101 documents
event be regarded as a guarantee of conditions or of the Automotive Electronics Council.
Infineon Technologies AG
characteristics (“Beschaffenheitsgarantie”).
81726 Munich, Germany Warnings
With respect to any examples, hints or any typical Due to technical requirements products may contain
values stated herein and/or any information regarding dangerous substances. For information on the types
© 2024 Infineon Technologies AG the application of the product, Infineon Technologies
in question please contact your nearest Infineon
hereby disclaims any and all warranties and liabilities
All Rights Reserved. Technologies office.
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any Except as otherwise explicitly approved by Infineon
third party. Technologies in a written document signed by
Do you have a question about any
authorized representatives of Infineon Technologies,
aspect of this document? In addition, any information given in this document is
Infineon Technologies’ products may not be used in
Email: erratum@infineon.com subject to customer’s compliance with its obligations any applications where a failure of the product or
stated in this document and any applicable legal any consequences of the use thereof can reasonably
requirements, norms and standards concerning be expected to result in personal injury.
Document reference customer’s products and any use of the product of
IFX-ABL377-002 Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Infineon:

IMZC120R012M2HXKSA1