Silicon N-Channel MOS FET: Application

2SK439
Silicon N-Channel MOS FET
ADE-208-1172 (Z) 1st. Edition Mar. 2001 Application

VHF amplifier
Outline
SPAK
23
1. Gate 2. Source 3. Drain
2SK439
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID IG Pch Tch Tstg Ratings 20 5 30 1 300 150 55 to +150 Unit V V mA mA mW C C
Electrical Characteristics (Ta = 25C)

Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Power gain Noise figure Note: Grade I DSS D 4 to 8 E 6 to 10 Symbol V(BR)DSX I GSS I DSS*
1
Min 20 4 0 8 F 8 to 12
Typ 14 2.5 0.03 1.8 30 2.0
Max 20 12 2.0
Unit V nA mA V mS pF pF pF dB dB
Test conditions I D = 100 A, VGS = 4 V VGS = 5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 10 A VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz
VGS(off) y fs Ciss Crss Coss PG NF
VDS = 5 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 100 MHz
1. The 2SK439 is grouped by I DSS as follows.
See characteristic curves of 2SK359.
2SK439
Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 300
200
100
50 100 150 Ambient Temperature Ta (C)
2SK439
Package Dimensions As of January, 2001
Unit: mm
4.2 Max 1.8 Max 3.2 Max
2.2 Max
0.45 0.1
14.5 Min
0.6
0.6 Max
0.4 0.1
1.27 1.27
2.54
Hitachi Code JEDEC EIAJ Mass (reference value)
SPAK 0.10 g
2SK439
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk
For further information write to:

Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

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2SK439

Silicon N-Channel MOS FET

ADE-208-1172 (Z) 1st. Edition Mar. 2001 Application

1. Gate 2. Source 3. Drain

Electrical Characteristics (Ta = 25C)

Typ 14 2.5 0.03 1.8 30 2.0

VGS(off) y fs Ciss Crss Coss PG NF

VDS = 5 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 100 MHz

1. The 2SK439 is grouped by I DSS as follows.

See characteristic curves of 2SK359.

50 100 150 Ambient Temperature Ta (C)

4.2 Max 1.8 Max 3.2 Max

Hitachi Code JEDEC EIAJ Mass (reference value)

NorthAmerica Europe Asia Japan

http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

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