Order this document

SEMICONDUCTOR TECHNICAL DATA by MCR16/D

 
    
   *Motorola preferred devices

Designed primarily for half–wave ac control applications, such as motor SCRs

controls, heating controls, and power supplies; or wherever half–wave, silicon 16 AMPERES RMS
gate–controlled devices are needed. 400 thru 800
• Blocking Voltage to 800 Volts VOLTS
• On-State Current Rating of 16 Amperes RMS
• High Surge Current Capability — 160 Amperes
• Industry Standard TO–220AB Package for Ease of Design A

• Glass Passivated Junctions for Reliability and Uniformity

K
A
G
CASE 221A–06
(TO-220AB)
Style 3

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit
Peak Repetitive Off-State Voltage (1) VDRM Volts
Peak Repetitive Reverse Voltage VRRM
(TJ = –40 to 125°C) MCR16D 400
MCR16M 600
MCR16N 800
On-State RMS Current IT(RMS) 16 A
(All Conduction Angles)
Peak Non-repetitive Surge Current ITSM 160 A
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms) I2t 106 A2sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 5.0 Watts
Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 Watts
Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) IGM 2.0 A
Operating Junction Temperature Range TJ – 40 to +125 °C
Storage Temperature Range Tstg – 40 to +150 °C

THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case RθJC 1.5 °C/W
Thermal Resistance — Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1

Motorola Thyristor Device Data 1

 Motorola, Inc. 1995

This datasheet has been downloaded from http://www.digchip.com at this page

  
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Peak Forward Blocking Current TJ = 25°C IDRM — — 0.01 mA
Peak Reverse Blocking Current TJ = 125°C IRRM — — 2.0
(VAK = Rated VDRM or VRRM, Gate Open)

ON CHARACTERISTICS
Peak On-State Voltage* (ITM = 32 A) VTM — — 1.7 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 2.0 8.0 20 mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.65 1.0 Volts
Hold Current (Anode Voltage =12 V) IH 4.0 25 40 mA

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 50 200 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 25°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

125
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

MAXIMUM AVERAGE POWER P(AV) DISSIPATION (WATTS)

22
120 20
dc
a 18
115 a 180°
a = Conduction 16
120°
Angle 14 a = Conduction 90°
110 Angle
12 60°

105 10 a=30°
8
100
6
a=30° 60° 90° 120° 180° dc 4
95
2
90 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(AV), AVERAGE ON–STATE CURRENT (AMP) IT(AV), AVERAGE ON–STATE CURRENT (AMP)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

100 1
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)

Typical @ TJ=25 °C
R(t) TRANSIENT THERMAL R (NORMALIZED)

Maximum @ TJ=125 °C

10
Z qJC(t) + RqJC(t) @ r(t)
0.1

Maximum @ TJ=25 °C
1

0.1
0.5 1 1.5 2 2.5 3 3.5
0.01
0.1 1 10 100 1000 @
1 10 4
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

2 Motorola Thyristor Device Data

  
100 100

I L , LATCHING CURRENT (mA)

I H, HOLDING CURRENT (mA)

10 10
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (_C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current Versus Figure 6. Typical Latching Current Versus
Junction Temperature Junction Temperature

100 0.85

VGT , GATE TRIGGER VOLTAGE (VOLTS)

0.80
I GT, GATE TRIGGER CURRENT (mA)

0.75

0.70

0.65
10
0.60

0.55

0.50

0.45

1 0.40
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Current Versus Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature Junction Temperature

1400 160
1 Cycle
ITSM , PEAK SURGE CURRENT (AMP)

150
1200
TJ + 125°C +
V PK 800 V 140
STATIC dv/dt (V/uS)

1000 130

120
800

110
600 TJ + 125°C f + 60Hz
100

400
10 100 1000 @
1 10 4
90
1 2 3 4 5 6 7 8 9 10
RGK, GATE CATHODE RESISTANCE (OHMS) NUMBER OF CYCLES

Figure 9. Typical Exponential Static dv/dt Versus Figure 10. Maximum Non–Repetitive
Gate Cathode Resistance. Surge Current

Motorola Thyristor Device Data 3

 
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K STYLE 3: G 0.095 0.105 2.42 2.66
Z PIN 1. CATHODE H 0.110 0.155 2.80 3.93
2. ANODE J 0.018 0.025 0.46 0.64
3. GATE K 0.500 0.562 12.70 14.27
4. ANODE L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V J Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N CASE 221A–06 V 0.045 ––– 1.15 –––
(TO-220AB) Z ––– 0.080 ––– 2.04

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

4 Motorola Thyristor Device Data

*MCR16/D*
◊ MCR16/D