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FEEE Lab ($$)

The document outlines an experiment to plot the Volt-Ampere characteristics of a Silicon P-N Junction Diode, detailing the theory behind forward and reverse bias conditions. It explains the diode's behavior as a switch and introduces concepts such as static and dynamic resistance, as well as the implications of reverse breakdown. The procedure includes steps for measuring forward and reverse currents under varying voltages, culminating in the verification of the diode's VI characteristics.

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wowepo1993
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4 views

FEEE Lab ($$)

The document outlines an experiment to plot the Volt-Ampere characteristics of a Silicon P-N Junction Diode, detailing the theory behind forward and reverse bias conditions. It explains the diode's behavior as a switch and introduces concepts such as static and dynamic resistance, as well as the implications of reverse breakdown. The procedure includes steps for measuring forward and reverse currents under varying voltages, culminating in the verification of the diode's VI characteristics.

Uploaded by

wowepo1993
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Expt.

-10: P-N JUNCTION DIODE CHARACTERISTICS


Aim: To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode.
Apparatus:

Theory:
The term bias refers to the use of a dc voltage to establish certain operating conditions for an electronic
device. Depending on the magnitude and polarity of the applied voltage the diode is said to be:
Forward Biased, Anode voltage is greater than the Cathode voltage
Reverse Biased, Cathode voltage is greater than the Anode voltage
So, diode is a simple switch that is either closed (conducting) or open (non-conducting). Specifically,
the diode is a short circuit, like a closed switch, when voltage is applied in the forward direction, and
an open circuit, like an open switch, when the voltage is applied in the reverse direction.
Let us now take the earlier model one more step. The offset voltage model adds the barrier potential to
the ideal switch model. When the diode is forward biased it is equivalent to a closed switch in series
with a small equivalent voltage source equal to the barrier potential (0.7 V for Silicon, 0.4 for
germanium) with the positive side towards the anode. When the diode is reverse biased, it is equivalent
to an open switch just as in the ideal model.
When forward biased, Vg ( 0.7 for Silicon and 0.4 for Germanium ) volts appears across the diode and
current flows.
During reverse bias, when the voltage applied across the diode is less than Vg, there will be no current
flowing.
Let us now take the earlier model one more step. It is the most accurate of the diode models. The
Complete diode model of a diode consists of the barrier potential, the small forward dynamic resistance
and the ideal diode. The resistor approximates the semiconductor resistance under forward bias. This
diode model most accurately represents the true operating characteristics of the real diode.
Static Resistance of a P-N junction diode is the ratio of forward voltage to forward current
Dynamic Resistance of a P-N junction diode is the small change in forward voltage to small change in
forward current at a particular operating point.
When a diode is reverse biased a leakage current flows through the device. This current can be
effectively ignored as long as the reverse breakdown voltage of the diode is not exceeded. At potentials
greater than the reverse breakdown voltage, charge is pulled through the p-n junction by the strong
electric fields in the device and large reverse current flows. This usually destroys the device. There are
special diodes that are designed to operate in breakdown. Such diodes are called zener diodes and used
as voltage regulators.

Forward Bias:
Reverse Bias:

Procedure:

Forward Bias:

1. Connect the PN Junction diode in forward bias i.e Anode is connected to positive of the power supply
and cathode is connected to negative of the power supply .
2. Use a Regulated power supply of range (0-30)V and a series resistance of 1kΏ.
3. For various values of forward voltage (Vf) note down the corresponding values of forward current(If)
.
Reverse bias:

1. Connect the PN Junction diode in Reverse bias i.e; anode is connected to negative of the power
supply and cathode is connected to positive of the power supply.
2. For various values of reverse voltage (Vr ) note down the corresponding values of reverse current (
Ir ).

Tabular column:

Forward Bias:
Reverse Bias:

Graph:

Result:
Thus the VI characteristics of PN junction diode is verified. Determined.

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