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    Derivation of and of A Mosfet: T MAX

    Uploaded by

    Subir Maity
    The document derives the expressions for cutoff frequency (fT) and maximum oscillation frequency (fMAX) for MOSFETs and Bipolar transistors. For MOSFETs, fT depends on gate capacitance and transconductance and is independent of gate resistance. fMAX is defined under conjugate input/output matching and depends on output conductance and resistances. For Bipolar transistors, fT depends on base-collector and base-emitter capacitances and transconductance. Both fT and fMAX are affected by source/drain resistances for MOSFETs.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd

    Derivation of and of A Mosfet: T MAX

    Uploaded by

    Subir Maity
    120 views16 pages
    The document derives the expressions for cutoff frequency (fT) and maximum oscillation frequency (fMAX) for MOSFETs and Bipolar transistors. For MOSFETs, fT depends on gate capacitance and transconductance and is independent of gate resistance. fMAX is defined under conjugate input/output matching and depends on output conductance and resistances. For Bipolar transistors, fT depends on base-collector and base-emitter capacitances and transconductance. Both fT and fMAX are affected by source/drain resistances for MOSFETs.

    Original Description:

    cut off freq derivation

    Original Title

    derivation of ft

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    © © All Rights Reserved

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    The document derives the expressions for cutoff frequency (fT) and maximum oscillation frequency (fMAX) for MOSFETs and Bipolar transistors. For MOSFETs, fT depends on gate capacitance and transconductance and is independent of gate resistance. fMAX is defined under conjugate input/output matching and depends on output conductance and resistances. For Bipolar transistors, fT depends on base-collector and base-emitter capacitances and transconductance. Both fT and fMAX are affected by source/drain resistances for MOSFETs.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    120 views16 pages

    Derivation of and of A Mosfet: T MAX

    Uploaded by

    Subir Maity
    The document derives the expressions for cutoff frequency (fT) and maximum oscillation frequency (fMAX) for MOSFETs and Bipolar transistors. For MOSFETs, fT depends on gate capacitance and transconductance and is independent of gate resistance. fMAX is defined under conjugate input/output matching and depends on output conductance and resistances. For Bipolar transistors, fT depends on base-collector and base-emitter capacitances and transconductance. Both fT and fMAX are affected by source/drain resistances for MOSFETs.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 16

    Derivation of f

    T
    And f
    MAX
    of a MOSFET
    Derivation of f
    T

    (MOSFETs)
    The unity current gain frequency* (aka
    cutoff frequency)
    Defined under the condition that the output
    is loaded with an AC short.
    f
    T
    does not depend on R
    g
    and r
    o

    Derivation of f
    T

    (MOSFETs) (Continued)
    ) ( 2
    1
    ) (
    ) ( ) (
    ) (
    gd gs
    m
    T
    I
    gd gs m
    gd gs
    m
    gd gs
    gd m
    ins
    os
    I
    gd gs gs ins
    gs gd gs m gd gs m os
    C C
    g
    f
    A when
    j
    C C g
    C C s
    g
    C C s
    sC g
    i
    i
    A
    C C sV i
    V sC V g i V g i
    +
    =
    =
    +
    =
    +
    ~
    +

    =
    + =
    = =
    t
    e
    Assume the zero (sCgd) is smaller compared to gm.
    e
    e
    e j j
    C C g
    A
    T
    gd gs m
    I
    =
    +
    =
    ) (
    f
    T

    with Parasitic R
    S
    and R
    D

    Derivation of f
    T

    (MOSFETs) (Continued)
    (R
    S
    and R
    D
    are included)
    Millers
    Approximation
    | |
    | |
    ) (
    ) ( 1
    2
    1
    ) ( 1
    ) ( // ) (
    D S gd
    m
    gd gs
    m
    D S m gd gs
    T
    D S m gd M
    D S m o D S m
    gs
    d
    V
    R R C
    g
    C C
    g
    R R g C C
    f
    R R g C C
    R R g r R R g
    V
    V
    A
    + +
    +
    =
    + + +
    =

    + + =
    + ~ + = =
    t
    Derivation of f
    MAX

    (MOSFETs)

    f
    MAX
    * is the frequency at
    which the maximum power
    gain =1 (*aka maximum
    oscillation frequency)
    f
    MAX
    is defined with
    its input and output ports
    conjugate-matched for
    maximum power transfer
    So, we need to know the
    input and output impedance
    to define the input and
    output power as well as
    achieve the max power
    transfer matching condition.
    Derivation of f
    MAX

    (MOSFETs)

    gd gs T
    gd m
    T
    o
    gd gs
    gd m
    o
    out
    gd gs
    gd
    t
    gs
    gs m dg
    dg gs m
    o
    t
    t
    t
    t
    out
    C C C
    C g
    C
    r
    C C
    C g
    r
    Z
    C C
    C
    V
    V
    V g i Assume
    i V g
    r
    V
    i
    i
    V
    Z
    +
    =
    +
    +
    =
    +
    ~ <<
    + + =

    //
    1
    1
    &

    g
    gs
    g in
    R
    C j
    R Z ~ + =
    e
    1
    At high frequency (close to
    fmax), we can assume that


    So, R
    g
    is independent of R
    L
    0
    1
    ~
    gs
    C je
    2
    os
    o out L
    i
    i R R = =
    For the matching conditions,
    g
    s
    ins in g S
    R
    V
    i i R Z
    2
    = = =
    Derivation of f
    MAX

    (MOSFETs) (Continued)
    Conjugate match at the input: Conjugate match at the output:
    Power Gain (Under Conjugate Match)
    o
    g
    g gd T
    T
    MAX
    gd T
    o
    gd gs
    gd m
    o
    L
    g
    L
    T MAX
    p
    g
    L T
    g
    L
    ins
    os
    in in
    out o
    p
    r
    R
    R C f
    f
    f
    C f
    r
    C C
    C g
    r
    R
    R
    R
    f f f
    G when
    R
    R
    f
    f
    R
    R
    i
    i
    R i
    R i
    G
    +
    =
    +
    =
    +
    +
    =
    = =
    =
    |
    |
    .
    |

    \
    |
    |
    |
    .
    |

    \
    |
    =
    t
    t
    2
    2
    1
    2
    1
    1
    1
    1
    2
    1
    1
    4
    1
    4
    1
    2 2
    2
    2
    1
    2
    2
    1

    Using the
    definition of f
    T
    Derivation of f
    MAX
    (MOSFETs)(Continued)
    (R
    S
    and R
    D
    are included)
    s g in
    R R Z + =
    Hence, replace R
    g
    by R
    g
    +R
    s
    o
    s g
    s g gd T
    T
    MAX
    r
    R R
    R R C f
    f
    f
    +
    + +
    =
    ) ( 2
    2
    1
    t
    For high frequency condition,
    C
    gs
    short
    w/o (R
    S
    +R
    D
    ) term

    w/ (R
    S
    +R
    D
    ) term

    Derivation of f
    T
    And f
    MAX
    of a BJT
    Derivation of f
    T

    (Bipolar)
    For Bipolar Transistors,

    BE
    DE
    DE
    dBC
    DE dBE
    m
    T
    o be gs
    gd gs
    dv
    dQ
    C
    C C
    C C C
    C C
    g
    f
    r V V
    C C C C

    =
    +
    +
    =

    t
    t
    t
    t



    ) ( 2
    C
    DE
    is due to minority
    carriers caused by FB
    Derivation of f
    T

    (Bipolar) (Continued)
    BC BE B E DE
    Q Q Q Q Q + + + =
    Q
    E
    = minority holes stored in emitter
    Q
    B
    = minority electrons stored in base

    Q
    BE
    = electrons induced by the current
    through the depletion region of BE-junction

    Q
    BC
    = electrons induced by the current
    through the depletion region of BC-junction
    Derivation of f
    T

    (Bipolar) (Continued)
    F
    m
    dBC dBE
    m
    dBC DE dBE
    m T
    m F
    BE
    C
    F
    BE
    DE
    DE
    s
    BC
    s
    BE
    B
    B
    E
    E
    BC BE B E
    C
    DE
    F
    g
    C C
    g
    C C C
    g
    C C
    f
    g
    dv
    di
    dv
    dQ
    C
    X X
    D
    W
    D
    W
    t t t t
    di
    dQ
    t
    t
    t t
    v v q q|
    t
    t
    +
    +
    =
    + +
    =
    +
    =

    = =
    + + + = + + + =
    2
    1
    2 2 2 2
    2 2
    Width of Neutral Region
    Width of
    Depletion
    Region
    1 > q
    BE
    X
    if drift current is considered.
    is greater than because of reverse-biasing.
    BC
    X
    Derivation of f
    T

    (Bipolar)
    (R
    S
    and R
    D
    are included)
    For bipolar, the result is similar.
    The only difference is that the term must be
    included.

    | |
    | |
    ) (
    ) (
    ) ( 1
    2
    1
    ) ( 1
    ) (
    C E dBC F
    m
    dBC dBE
    C E dBC
    m
    dBC F m dBE
    m
    C E m dBC DE dBE
    T
    C E m dBC M
    C E m
    be
    c
    V
    R R C
    g
    C C
    R R C
    g
    C g C
    g
    R R g C C C
    f
    R R g C C
    R R g
    V
    V
    A
    + + +
    +
    =
    + +
    + +
    =
    + + + +
    =

    + + =
    + ~ =
    t
    t
    t


    F
    t
    Derivation of f
    MAX

    (Bipolar)

    b bc
    T
    o
    g
    b bc T
    T
    MAX
    R C
    f
    r
    R
    R C f
    f
    f
    t
    t
    8
    2
    2
    1
    =
    +
    =
    For bipolar transistors, there is no term.
    o
    r

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