Imperfections in Solid Materials - Ch4
Imperfections in Solid Materials - Ch4
Imperfections in Solid Materials - Ch4
Materials
R. Lindeke
ENGR 2110
ISSUES TO ADDRESS...
What are the solidification mechanisms?
What types of defects arise in solids?
Imperfections in Solids
Solidification- result of casting of molten material
2 steps
Nuclei form
Nuclei grow to form crystals grain structure
nuclei
liquid
crystals growing
grain structure
Adapted from Fig.4.14 (b), Callister 7e.
Polycrystalline Materials
Grain Boundaries
regions between crystals
transition from lattice of
one region to that of the
other
slightly disordered
low density in grain
boundaries
high mobility
high diffusivity
high chemical reactivity
Adapted from Fig. 4.7, Callister 7e.
Solidification
Grains can be - equiaxed (roughly same size in all directions)
- columnar (elongated grains)
~ 8 cm
heat
flow
Columnar in
area with less
undercooling
Shell of
equiaxed grains
due to rapid
cooling (greater
T) near wall
Point Defects
Vacancies:
-vacant atomic sites in a structure.
Vacancy
distortion
of planes
Self-Interstitials:
-"extra" atoms positioned between atomic sites.
selfinterstitial
distortion
of planes
POINT DEFECTS
The simplest of the point defect is a vacancy, or vacant lattice site.
All crystalline solids contain vacancies.
Nv= N exp(-Qv/kT)
exp
=
k T
N
Replot it...
Nv
ln
Nv
N
note:
N
N A El
AEl
slope
-Qv /k
exponential
dependence!
defect concentration
1/ T
ACu
63.5 g / mol
8.0x1028 atoms / m3
Thus, the number of vacanciesat 1000 C (1273K ) ie equal to
Continuing:
Qv
N v N exp
kT
(
0
.
9
eV
28
2.2x1025 vacancies/m3
And Note: for MOST MATERIALS just below
Tm Nv/N = 10-4
Here: 0.0022/8 = .000275 = 2.75*10-4
OR
Substitutional solid soln.
(e.g., Cu in Ni)
Imperfections in Solids
Conditions for substitutional solid solution (S.S.)
Hume Rothery rules
1. r (atomic radius) < 15%
2. Proximity in periodic table
i.e., similar electronegativities
Imperfections in Solids
Application of HumeRothery rules Solid
Solutions
Element
Atomic Crystal
ElectroRadius Structure
(nm)
2. More Zn or Al
in Cu?
Surely Zn since size is closer thus
causing lower distortion (4% vs 12%)
Cu
C
H
O
Ag
Al
Co
Cr
Fe
Ni
Pd
Zn
0.1278
0.071
0.046
0.060
0.1445
0.1431
0.1253
0.1249
0.1241
0.1246
0.1376
0.1332
Valence
negativity
FCC
1.9
+2
FCC
FCC
HCP
BCC
BCC
FCC
FCC
HCP
1.9
1.5
1.8
1.6
1.8
1.8
2.2
1.6
+1
+3
+2
+3
+2
+2
+2
+2
Imperfections in Solids
Specification of composition
weight percent
C1
m1
x 100
m1 m2
m1 = mass of component 1
atom percent
C1'
n m1
x 100
n m1 n m 2
C2 A1
C
100
C1 A2 C2 A1
'
2
C A1
C1 '
100
'
C1 A1 C2 A2
Converts from
wt% to At% (Ai is
atomic weight)
'
1
C A2
C2 '
100
'
C1 A1 C2 A2
'
2
Converts from
at% to wt% (Ai is
atomic weight)
C
1
C1"
C1 C2
1
2
C
2
C2"
C1 C2
1
2
103
103
i is density of pure
element in g/cc
Computed this way,
gives concentration
of speciesi in kg/m3 of
the bulk mixture
(alloy)
Line Defects
Are called Dislocations:
And:
slip between crystal planes result when dislocations move,
this motion produces permanent (plastic) deformation.
Edge dislocation:
extra half-plane of atoms inserted in a crystal structure
b (the bergers vector) is (perpendicular) to dislocation
line
Screw dislocation:
spiral planar ramp resulting from shear deformation
b is (parallel) to dislocation line
Edge Dislocation
Edge Dislocation
http://www.wiley.com/
college/callister/CL_E
WSTU01031_S/vmse
/dislocations.htm
Screw Dislocations
Dislocation
line
Burgers vector b
(b)
(a)
Adapted from Fig. 4.4, Callister 7e.
Edge
Adapted from Fig. 4.5, Callister 7e.
Screw
Imperfections in Solids
Dislocations are visible in (T) electron micrographs
close-packed directions
close-packed plane (top)
Specimens that
were tensile
tested.
Mg (HCP)
tensile direction
Al (FCC)
Stacking faults
For FCC metals an error in ABCABC packing sequence
Ex: ABCABABC
MICROSCOPIC EXAMINATION
Applications
To Examine the structural elements and defects that influence the
properties of materials.
Ensure that the associations between the properties and structure (and
defects) are properly understood.
Predict the properties of materials once these relationships have been
established.
Optical Microscopy
Useful up to 2000X magnification (?).
Polishing removes surface features (e.g., scratches)
Etching changes reflectance, depending on crystal
orientation since different Xtal planes have different
reactivity.
crystallographic planes
Adapted from Fig. 4.13(b) and (c), Callister
7e. (Fig. 4.13(c) is courtesy
of J.E. Burke, General Electric Co.
Micrograph of
brass (a Cu-Zn alloy)
0.75mm
Optical Microscopy
Grain boundaries...
are planer imperfections,
are more susceptible
to etching,
may be revealed as
dark lines,
relate change in crystal
orientation across
boundary.
polished surface
(a)
surface groove
grain boundary
Adapted from Fig. 4.14(a)
and (b), Callister 7e.
(Fig. 4.14(b) is courtesy
of L.C. Smith and C. Brady,
the National Bureau of
Standards, Washington, DC
[now the National Institute of
Standards and Technology,
Gaithersburg, MD].)
ASTM grain
size number
N = 2n-1
number of grains/in2
at 100x
magnification
Fe-Cr alloy
(b)
N = 2 n-1
M
n -1
NM
2
100
M is mag. of image
N M is measured grain count at M
now solve for n:
log( N M ) 2 log M - log 100 n - 1 log 2
log N m 2 log M - 4
n
1
log 2
n
N 2
n -1
8 -1
128 grains/in
100
100
NM 2
128*
M
50
2
2
N M 128* 2 512 grains/in
8 -1
At 100x
Number of Grains/in2
600
500
400
300
200
100
0
6
Grain Size number (n)
10
12
Electron Microscopes
beam of electrons of
shorter wave-length
(0.003nm) (when
accelerated across large
voltage drop)
Image formed with
Magnetic lenses
Carbon monoxide
molecules arranged
on a platinum (111)
surface.
Summary
Point, Line, and Area defects exist in solids.
The number and type of defects can be varied and
controlled
T controls vacancy conc.
amount of plastic deformation controls # of dislocations
Weight of charge materials determine concentration of
substitutional or interstitial point defects