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    ECE-E434 Digital Electronics

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    Phuoc Vu
    This document discusses digital memory circuits and SRAM read operations. It begins with an overview of D flip-flops and their master-slave configuration implementation. It then discusses different memory types and RAM terminology. The remainder focuses on SRAM, including its cell structure, read operation process of pre-charging bit lines and using a non-destructive sense amplifier, and factors that influence read speed such as number of memory cells per bit line.

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    ECE-E434 Digital Electronics

    Uploaded by

    Phuoc Vu
    63 views15 pages
    This document discusses digital memory circuits and SRAM read operations. It begins with an overview of D flip-flops and their master-slave configuration implementation. It then discusses different memory types and RAM terminology. The remainder focuses on SRAM, including its cell structure, read operation process of pre-charging bit lines and using a non-destructive sense amplifier, and factors that influence read speed such as number of memory cells per bit line.

    Original Description:

    ECEE 421

    Original Title

    Lecture 14

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    This document discusses digital memory circuits and SRAM read operations. It begins with an overview of D flip-flops and their master-slave configuration implementation. It then discusses different memory types and RAM terminology. The remainder focuses on SRAM, including its cell structure, read operation process of pre-charging bit lines and using a non-destructive sense amplifier, and factors that influence read speed such as number of memory cells per bit line.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    63 views15 pages

    ECE-E434 Digital Electronics

    Uploaded by

    Phuoc Vu
    This document discusses digital memory circuits and SRAM read operations. It begins with an overview of D flip-flops and their master-slave configuration implementation. It then discusses different memory types and RAM terminology. The remainder focuses on SRAM, including its cell structure, read operation process of pre-charging bit lines and using a non-destructive sense amplifier, and factors that influence read speed such as number of memory cells per bit line.

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    You are on page 1of 15

    ECE-E434 Digital Electronics

    Lectures 14: D-FF; Memory


    Architecture; SRAM (Read Operation)

    Instructor: Pouya Dianat


    Nov 9 2017
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    SRFF using CMOS: Another Version


    A Clocked Version of SR Flip-Flop
    using Pass Transistor Logic

    Very popular for making Static Random Access Memories (SRAM)


    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    D Flip-Flop
    • The output takes the value of the data, D, when the clock goes H;
    • otherwise it is in memory state.
    • It is edge-triggered.
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    D Flip-Flop
    Implementation
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    D Flip-Flop: Master-Slave Configuration


    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    Semiconductor Memories: Types


    Why is memory needed?

    Storing Data Storing


    Instructions
    Memory types Memory types

    Main Memory Mass-storage Read/Right Read-Only


    Memory

    • Storing microprocessor
    instructions
    Random Access Mainly sequential • Look-up tables
    Memory memories (disks, tapes) • Generally Random-
    access
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    Semiconductor Memories: Terminology & Organization

    • Memory cell
    • Word line
    • Digit/bit line
    • Row decoder
    • Sense amplifier
    • Column decoder
    • Read Operation
    • Write Operation and driver
    • Memory access time
    • Memory cycle time
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    Random Access Memory


    Memory types

    Main Memory Mass-storage


    Memory

    Random Access Mainly sequential


    Memory memories (disks, tapes)

    Static Dynamic
    • Uses static circuits as • Smaller area
    memory cell • Requires refreshing
    • Volatile • Volatile
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    Static RAM (SRAM)


    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    SRAM: Read Operation


    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    SRAM: Read Operation


    • Bit lines are pre-charged to VDD
    • Read operation has to be non-
    destructive:

    • Therefore:
    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    SRAM: Read Operation Design Criteria


    ECE-E434
    Digital Electronics
    Memory Circuits– Ch. 16

    SRAM: Speed of Read Operation

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