Introduction to

CMOS VLSI
Design
Introduction

Unit 1

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 Introduction
• Integrated circuits: many transistors on one
chip.
• Very Large Scale Integration (VLSI): very
many
• Complementary Metal Oxide Semiconductor
o Fast, cheap, low power transistors
• Today: How to build your own simple CMOS
chip
o CMOS transistors
o Building logic gates from transistors
o Transistor layout and fabrication
• Rest of the course: How to build a good
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 Silicon Lattice
• Transistors are built on a silicon substrate
• Silicon is a Group IV material
• Forms crystal lattice with bonds to four
neighbors

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 Dopants
• Silicon is a semiconductor
• Pure silicon has no free carriers and conducts
poorly
• Adding dopants increases the conductivity
• Group V: extra electron (n-type)
• Group III: missing electron, called hole (p-type)

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 p-n Junctions
• A junction between p-type and n-type
semiconductor forms a diode.
• Current flows only in one direction

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 nMOS Transistor
• Four terminals: gate, source, drain, body
• Gate – oxide – body stack looks like a capacitor
o Gate and body are conductors
o SiO2 (oxide) is a very good insulator
o Called metal – oxide – semiconductor (MOS)
capacitor
o Even though gate is
no longer made of metal

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 nMOS Operation
• Body is commonly tied to ground (0 V)
• When the gate is at a low voltage:
o P-type body is at low voltage
o Source-body and drain-body diodes are OFF
o No current flows, transistor is OFF

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 nMOS Operation Cont.
• When the gate is at a high voltage:
o Positive charge on gate of MOS capacitor
o Negative charge attracted to body
o Inverts a channel under gate to n-type
o Now current can flow through n-type silicon from
source through channel to drain, transistor is ON

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 pMOS Transistor
• Similar, but doping and voltages reversed
o Body tied to high voltage (VDD)
o Gate low: transistor ON
o Gate high: transistor OFF
o Bubble indicates inverted behavior

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 Power Supply Voltage
• GND = 0 V
• In 1980’s, VDD = 5V
• VDD has decreased in modern processes
o High VDD would damage modern tiny
transistors
o Lower V saves power
DD

• VDD = 3.3, 2.5, 1.8, 1.5, 1.2, 1.0, …

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 Transistors as Switches
• We can view MOS transistors as
electrically controlled switches
• Voltage at gate controls path from source
to drain

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 CMOS Fabrication
• CMOS transistors are fabricated on silicon
wafer
• Lithography process similar to printing
press
• On each step, different materials are
deposited or etched
• Easiest to understand by viewing both top
and cross-section of wafer in a simplified
manufacturing process
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 Inverter Cross-section
• Typically use p-type substrate for nMOS
transistors
• Requires n-well for body of pMOS
transistors

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 Well and Substrate Taps
• Substrate must be tied to GND and n-well to VDD
• Metal to lightly-doped semiconductor forms poor
connection called Shottky Diode
• Use heavily doped well and substrate contacts /
taps

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 Inverter Mask Set
• Transistors and wires are defined by
masks
• Cross-section taken along dashed line

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 Detailed Mask Views
• Six masks
o n-well
o Polysilicon
o n+ diffusion
o p+ diffusion
o Contact
o Metal

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 Fabrication Steps
• Start with blank wafer
• Build inverter from the bottom up
• First step will be to form the n-well
o Cover wafer with protective layer of SiO2 (oxide)
o Remove layer where n-well should be built
o Implant or diffuse n dopants into exposed wafer
o Strip off SiO2

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 Oxidation
• Grow SiO2 on top of Si wafer
o 900 – 1200 C with H2O or O2 in oxidation
furnace

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 Photoresist
• Spin on photoresist
o Photoresist is a light-sensitive organic polymer
o Softens where exposed to light

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 Lithography
• Expose photoresist through n-well mask
• Strip off exposed photoresist

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 Etch
• Etch oxide with hydrofluoric acid (HF)
o Seeps through skin and eats bone; nasty
stuff!!!
• Only attacks oxide where resist has been
exposed

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 Strip Photoresist
• Strip off remaining photoresist
o Use mixture of acids called piranah etch
• Necessary so resist doesn’t melt in next
step

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 n-well
• n-well is formed with diffusion or ion implantation
• Diffusion
o Place wafer in furnace with arsenic gas
o Heat until As atoms diffuse into exposed Si
• Ion Implanatation
o Blast wafer with beam of As ions
o Ions blocked by SiO2, only enter exposed Si

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 Strip Oxide
• Strip off the remaining oxide using HF
• Back to bare wafer with n-well
• Subsequent steps involve similar series of
steps

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 Polysilicon
• Deposit very thin layer of gate oxide
o < 20 Å (6-7 atomic layers)
• Chemical Vapor Deposition (CVD) of silicon layer
o Place wafer in furnace with Silane gas (SiH4)
o Forms many small crystals called polysilicon
o Heavily doped to be good conductor

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 Polysilicon Patterning
• Use same lithography process to pattern
polysilicon

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 Self-Aligned Process
• Use oxide and masking to expose where
n+ dopants should be diffused or
implanted
• N-diffusion forms nMOS source, drain,
and n-well contact

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 N-diffusion
• Pattern oxide and form n+ regions
• Self-aligned process where gate blocks diffusion
• Polysilicon is better than metal for self-aligned
gates because it doesn’t melt during later
processing

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 N-diffusion cont.
• Historically dopants were diffused
• Usually ion implantation today
• But regions are still called diffusion

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 N-diffusion cont.
• Strip off oxide to complete patterning step

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 P-Diffusion
• Similar set of steps form p+ diffusion
regions for pMOS source and drain and
substrate contact

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 Contacts
• Now we need to wire together the devices
• Cover chip with thick field oxide
• Etch oxide where contact cuts are needed

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 Metalization
• Sputter on aluminum over whole wafer
• Pattern to remove excess metal, leaving
wires

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 Layout
• Chips are specified with set of masks
• Minimum dimensions of masks determine
transistor size (and hence speed, cost, and power)
• Feature size f = distance between source and
drain
o Set by minimum width of polysilicon
• Feature size improves 30% every 3 years or so
• Normalize for feature size when describing design
rules
• Express rules in terms of  = f/2
o E.g.  = 0.3 m in 0.6 m process

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 Simplified Design Rules
• Conservative rules to get you started

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 Inverter Layout
• Transistor dimensions specified as Width /
Length
o Minimum size is 4 / 2sometimes called
1 unit
o In f = 0.6 m process, this is 1.2 m wide, 0.6
m long

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 Summary
• MOS Transistors are stack of gate, oxide,
silicon
• Can be viewed as electrically controlled
switches
• Build logic gates out of switches
• Draw masks to specify layout of transistors

• Now you know everything necessary to start