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    Transistor

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    Dreian Calaoagan Palalay
    The document discusses the history and development of the transistor from its invention in 1947 to replace vacuum tubes, describing its advantages as being smaller, more efficient, and not requiring warm-up time. It then covers the basic construction and operation of a bipolar junction transistor including the common configurations, majority and minority carrier flow, and the relationships between input, output, and bias currents defined by alpha and beta.

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    Transistor

    Uploaded by

    Dreian Calaoagan Palalay
    48 views18 pages
    The document discusses the history and development of the transistor from its invention in 1947 to replace vacuum tubes, describing its advantages as being smaller, more efficient, and not requiring warm-up time. It then covers the basic construction and operation of a bipolar junction transistor including the common configurations, majority and minority carrier flow, and the relationships between input, output, and bias currents defined by alpha and beta.

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    The document discusses the history and development of the transistor from its invention in 1947 to replace vacuum tubes, describing its advantages as being smaller, more efficient, and not requiring warm-up time. It then covers the basic construction and operation of a bipolar junction transistor including the common configurations, majority and minority carrier flow, and the relationships between input, output, and bias currents defined by alpha and beta.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    48 views18 pages

    Transistor

    Uploaded by

    Dreian Calaoagan Palalay
    The document discusses the history and development of the transistor from its invention in 1947 to replace vacuum tubes, describing its advantages as being smaller, more efficient, and not requiring warm-up time. It then covers the basic construction and operation of a bipolar junction transistor including the common configurations, majority and minority carrier flow, and the relationships between input, output, and bias currents defined by alpha and beta.

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    Transistor

    ECE132
    Bipolar Junction Transistor

    • In 1904, the vacuum-tube diode was introduced by J. A. Fleming. Shortly


    thereafter, in 1906, Lee De Forest added a third element, called the control
    grid, to the vacuum diode, resulting in the first amplifier, the triode.
    • In the following years, radio and television provided great stimulation to
    the tube industry.
    • In the early 1930s the four-element tetrode and five-element pentode
    gained prominence in the electron-tube industry.
    • On December 23, 1947, however, the electronics industry was to
    experience the advent of a completely new direction of interest and
    development. It was on the afternoon of this day that Walter H. Brattain and
    John Bardeen demonstrated the amplifying action of the first transistor at
    the Bell Telephone Laboratories.
    • The original transistor (a point-contact transistor) is shown in the figure.
    The advantages of this three terminal solid-state device over the tube were
    immediately obvious: It was smaller and lightweight; had no heater
    requirement or heater loss; had rugged construction; and was more
    efficient since less power was absorbed by the device itself; it was
    instantly available for use, requiring no warm-up period; and lower
    operating voltages were possible.
    TRANSISTOR CONSTRUCTION
    TRANSISTOR OPERATION

    Forward-biased junction of a pnp transistor.


    TRANSISTOR OPERATION

    Reverse-biased junction of a pnp transistor.


    TRANSISTOR OPERATION

    Majority and minority carrier flow of a pnp transistor.

    IE = I C + I B
    IC = ICmajority + ICOminority
    COMMON-BASE CONFIGURATION

    Figure Notation and symbols used with the


    common-base configuration: (a) pnp transistor;
    (b) npn transistor.
    Common-base Configuration

    Input or driving point characteristics for a common-base silicon


    transistor amplifier.
    Output or collector characteristics for a common-base transistor
    amplifier.
    • (a) Using the characteristics of the previous
    figure, determine the resulting collector
    current if IE =3 mA and VCB =10 V.
    • Answer: The characteristics clearly indicate
    that IC=IE 3 mA.

    • (b) Using the characteristics , determine the


    resulting collector current if IE remains at 3
    mA but VCB is reduced to 2 V.
    • Answer: The effect of changing VCB is
    negligible and IC continues to be 3 mA.
    Common-emitter Configuration
    Common-emitter Configuration
    Common-collector Configuration
    Common-collector Configuration
    Alpha ()

    • In the dc mode the levels of IC and


    IE due to the majority carriers are
    related by a quantity called alpha
    and defined by the following
    equation:
    Beta ()

    • In the dc mode the levels of IC and IB


    are related by a quantity called beta
    and defined by the following
    equation:
    TRANSISTOR CASING ANDTERMINAL
    IDENTIFICATION
    The internal construction of a TO-92 package in the Fairchild line
    appears in the Figure. Note the very small size of the actual
    semiconductor device. There are gold bond wires, a copper frame,
    and an epoxy encapsulation.

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