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Electronics Lectures Module2

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9 views

Electronics Lectures Module2

Uploaded by

taetae141102
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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pn junction diode

• Load Line

By applying KVL
V - IDRL -VD=0
V = IDRL + VD -(1)
when VD=0
V=IDRL + 0
or V=IDRL
ID=V/RL

When ID=0
V=0xRL + VD
or VD=V

From eq. (1) V = IDRL + VD


Compare with
y = mx + c
Static and Dynamic Characteristics

• DC resistance of diode will be


• AC resistance of diode will be
Diode Equivalent Circuit

Forward bias

Reverse bias
Clipper
• Clippers are networks that use diodes to clip
or remove a portion of input signal without
distorting the remaining part of the waveform.
• Basic example of clipper is half wave rectifier
circuit.
Positive Clipper

• Positive clipper clips positive part of signal.


Negative Clipper

• Negative clipper clips negative part of signal.


Clamper
• A clamper is network constructed of a diode,
resistor and capacitor that shifts the waveform
to a different dc level without changing the
appearance of the applied signal.
• When a negative peak of the signal is raised
above to the zero level, then the signal is said
to be positively clamped.
• A Negative Clamper circuit is one that shifts
the positive peak of the signal below zero
level.
• During the first positive half cycle diode will
acts open circuit.
Diode acts as open circuit
Capacitor charging path

• Capacitor will take time to charge due to high


RC time constant
Output during first positive half cycle
During first negative half cycle
Diode acts as short circuit
Capacitor charging path
After capacitor charging anode becomes
positive. Diode is no more short circuit.
Output
During next positive half cycle
During next negative half cycle diode remains
reverse biased due to capacitor voltage
Negative Clamper
Diode acts as open circuit
Transferred Electron Device: Gunn Effect and
Gunn Diode
• In the transferred electron mechanism or
Gunn effect, the conduction electrons of some
semiconductors are shifted from a state of
high mobility to a state of low mobility by the
influence of a strong electric field.
• Here negative conductance operation is
achieved.
• The transferred electron effect is also called
Gunn effect and is named after J. B. Gunn.
Electron velocity Vs Electric field curve
• Further it is to be noted that the nature of
negative resistance exhibited by the Gunn
diode enables it to work as both an amplifier
and an oscillator, the latter of which is known
as a Gunn diode oscillator or Gunn oscillator.
• It is used in electronic oscillators to generate
microwave frequencies.
Band Diagram
• It is a semiconductor device with two
terminals, which composes of only an n-doped
semiconductor material, unlike other diodes
which consist of a p-n junction.
• Gunn diodes can be made from the materials
which consist of multiple, initially-empty,
closely-spaced energy valleys in their
conduction band like Gallium Arsenide (GaAs),
Indium Phosphide (InP), Gallium Nitride (GaN)
etc.
Schottky Diode

• Schottky diode was discovered by German


Physicist W.H. Schottky.
• As the frequency increases the action of small
signal rectifier diode becomes to deteriorate.
• Schottky diode is a metal semiconductor diode
in which one side is metal and other side is
doped silicon.
• The metal does not have any holes, it does not
store any charge.
• Since there is only N-type semiconductor in it,
so, it acts as a unipolar device.
• Whereas, a PN junction diode is a bipolar
device.
• It has a low barrier potential compared to PN
diode.
• Due to this reason, Schottky diode has the
advantage to quickly switch with relatively low
noise.
Unbiased Schottky Diode
Forward biased Schottky diode
Reverse biased Schottky diode
• Schottky diodes have applications in diode
rectifier circuits.
IMPATT (Impact Ionization and Avalanche
Transit Time) Diode
• An IMPATT diode (Impact Ionization Avalanche
Transit-Time diode) is a form of high-power
semiconductor diode used in high-frequency
electronics devices.
Symbol
VI Characteristic of IMPATT diode
Input Output Curves
pnpn diode

• The pnpn diode is a four layer two terminal


semiconductor switching device.
VI Characteristics of pnpn diode
Bipolar Junction Transistor (BJT)
Transistor Load Line and Q point

Applying KVL in the base circuit


VBB-IBRB-VBE=0
VBB-IBRB-VBE=0

If IB=0
VBB-VBE=0
VBB=VBE

If VBE=0
VBB-IBRB=0
VBB= IBRB
IB=VBB/RB
Output Operating Point

From collector circuit


VCE+ICRC-VCC=0
VCE+ICRC-VCC=0

When IC=0
VCE-VCC=0
VCE =VCC

When
VCE=0
ICRC-VCC=0
ICRC=VCC
IC=VCC /RC
Transistor Biasing

1. Working of transistor
2. Change in β
IC ≈β IB

3. Change in temperature
IC= β IB + (β+1)ICBO
Base bias or Fixed Current Bias
Applying KVL to base circuit
VCC-IBRB-VBE=0
VCC-VBE=IBRB
IBRB= VCC-VBE

Applying KVL to collector circuit


VCC-ICRC-VCE=0
VCE=VCC-ICRC
ICRC=VCC-VCE
Emitter Bias Configuration or Base bias with
Emitter feedback
KVL in base circuit gives
VCC-IBRB-VBE-IERE=0 -(1)
VCC-VBE-IERE=IBRB
IBRB=VCC-VBE-IERE

-(2)
IE=IC+IB
IE=βIB+IB
IE=(β+1)IB -
(3)
Put eq. (3) in eq. (1)
VCC-IBRB-VBE-(β+1)IB RE=0
VCC-VBE-IBRB-(β+1)IB RE=0
VCC-VBE-IB(RB+(β+1) RE)=0
VCC-VBE=IB(RB+(β+1) RE)
IB(RB+(β+1) RE)=VCC-VBE
IC=βIB -(5)
Put eq. (4) in eq.(5)

-
(6)

KVL in output loop gives


VCC-ICRC-VCE-IERE=0
Let
VCC-ICRC-VCE-ICRE=0
VCC-ICRC-ICRE-VCE=0
VCC-VCE= IC (RC+RE)
IC (RC+RE) = VCC-VCE

-(7)

Advantage of RE
•IC will not change with temperature
IC= β IB + (β+1)ICBO
• β change does not effect the circuit (IC is
independent of β)

• Or
Collector Feedback Biasing or Base bias with
Collector feedback
Applying KVL on base side circuit
VCC -IRC –IBRB-VBE=0
VCC –(IC+IB)RC –IBRB-VBE=0
VCC –(βIB+IB)RC –IBRB-VBE=0
VCC –IB(β+1)RC –IBRB-VBE=0
VCC –IB((β+1)RC +RB)-VBE=0
VCC –VBE= IB((β+1)RC +RB)
Applying KVL on output side
VCC-IRC-VCE=0
VCC-(IC+IB)RC-VCE=0
VCC-(IC+(IC/β))RC-VCE=0
VCC- IC(1+1/β)RC-VCE=0
VCC-VCE= IC(1+1/β)RC
IC(1+1/β)RC =VCC-VCE
• Stabilisation of Q point
βRC>>RC
Voltage Divider Biasing
Applying KVL in base circuit
VTH-IBRTH-VBE-IERE=0
VTH-VBE-IERE=IBRTH
IBRTH = VTH-VBE-IERE

Applying KVL in collector circuit


VCC-ICRC-VCE-IERE=0
VCC-ICRC-VCE-ICRE=0
VCC-ICRC-ICRE-VCE=0
VCC-IC (RC+RE) -VCE=0
VCC-VCE=IC (RC+RE)
IC (RC+RE) =VCC-VCE
Stabilisation of Q point
T IC IE IERE IB IC

IC= β IB + (β+1)ICBO

Stabilisation of Q point
β IC IE IERE IB IC

IC ≈β IB
Switching Transistor, Cut off and Saturation
Switching Cycle
Transit time effect and Frequency Limitations of
BJT
• Transit time is the time taken by the electrons
injected from the emitter to reach the
collector.

• If signal current changes before this transit


time then the signal will not be properly
amplified and distortion will be generated.
• Transit time corresponds to a cut off
frequency.
If Tt=0.15ns then fc=1/Tt=6.66GHz
Hetero-junction Bipolar Transistor (HBTs)

• Hetero-junction Bipolar Transistor (HBT) is a


type of BJT which uses differing
semiconductor materials for the base regions
creating a hetero-junction.
• Materials used for the base include GaAs, InP,
Al GaAs, InGaAs etc.
• The HBT improves on the BJT in that it can
handle signals of very high frequencies upto
several GHz.
• It is commonly used in modern ultrafast
circuits.
• It makes band gap narrower to increase speed
and frequency response.
Junction Field Effect Transistor (JFET)

• The field effect transistor is a semiconductor


device, which depends for its operation on the
control of current by an electric field.
CV Characteristics, Pinch off and Saturation
Small Signal Model
Metal Semiconductor FET (MESFET)

• The Metal Semiconductor Field Effect


Transistor (MESFET) consists of a conducting
channel positioned between a source and a
drain contact region as shown in figure.
• The carrier flow from source to drain is
controlled by a Schottky metal gate.
• MESFET can operate at a higher frequency
than JFET.
Metal Semiconductor FET (MESFET)
Metal Insulator Semiconductor Field Effect
Transistor (MISFET)
• MISFET is a general term and a synonym to
Insulated Gate Field Effect Transistor (IGFET).
• All MOSFETs are MISFETs, but not all MISFETs
are MOSFETs.
Metal Oxide Semiconductor Field Effect
Transistor (MOSFET)
• The MOSFET is a type of FET.
• It has an insulated gate, whose voltage
determines the conductivity of the device.
Working of MOSFET in Depletion mode
Drain Characteristics
Transfer Characteristics
Effective Mobility
Equivalent Circuit
High Electron Mobility Transistor (HEMT)
Short Channel Effect
• Due to channel of short length electrons can
not gain drift velocity to maximum value
leading to more transit time.
• Channel is short and depletion layer is also
comparable to channel length
High Electron Mobility Transistor (HEMT)
Short Channel Effect
• Due to channel of short length electrons can
not gain drift velocity to maximum value
leading to more transit time.
• Channel is short and depletion layer is also
comparable to channel length

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