X-ray lithography is a process that uses x-rays from a synchrotron source to transfer a pattern from a mask to a resist on a silicon wafer substrate. It can achieve resolutions as small as 10-20 nm. PMMA resist is applied to the wafer and hardened when exposed to x-rays from the synchrotron through an absorber/membrane mask. While it offers high resolution without diffraction limits, x-ray lithography is very costly compared to ultraviolet photolithography due to specialized equipment needs.