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Ferrimagnetic Regulation of Weyl Fermions in a Noncentrosymmetric Magnetic Weyl Semimetal
Authors:
Cong Li,
Jianfeng Zhang,
Yang Wang,
Hongxiong Liu,
Qinda Guo,
Emile Rienks,
Wanyu Chen,
Bertran Francois,
Huancheng Yang,
Dibya Phyuyal,
Hanna Fedderwitz,
Balasubramanian Thiagarajan,
Maciej Dendzik,
Magnus H. Berntsen,
Youguo Shi,
Tao Xiang,
Oscar Tjernberg
Abstract:
The study of interaction between electromagnetism and elementary particles is a long-standing topic in physics. Likewise, the connection between particle physics and emergent phenomena in condensed matter physics is a recurring theme and condensed matter physics has often provided a platform for investigating the interplay between particles and fields in cases that have not been observed in high-e…
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The study of interaction between electromagnetism and elementary particles is a long-standing topic in physics. Likewise, the connection between particle physics and emergent phenomena in condensed matter physics is a recurring theme and condensed matter physics has often provided a platform for investigating the interplay between particles and fields in cases that have not been observed in high-energy physics, so far. Here, using angle-resolved photoemission spectroscopy, we provide a new example of this by visualizing the electronic structure of a noncentrosymmetric magnetic Weyl semimetal candidate NdAlSi in both the paramagnetic and ferrimagnetic states. We observe surface Fermi arcs and bulk Weyl fermion dispersion as well as the regulation of Weyl fermions by ferrimagnetism. Our results establish NdAlSi as a magnetic Weyl semimetal and provide the first experimental observation of ferrimagnetic regulation of Weyl fermions in condensed matter.
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Submitted 30 March, 2023;
originally announced March 2023.
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Observation of multi-directional energy transfer in a hybrid plasmonic-excitonic nanostructure
Authors:
Tommaso Pincelli,
Thomas Vasileiadis,
Shuo Dong,
Samuel Beaulieu,
Maciej Dendzik,
Daniela Zahn,
Sang-Eun Lee,
Hélène Seiler,
Yinpeng Qi,
R. Patrick Xian,
Julian Maklar,
Emerson Coy,
Niclas S. Müller,
Yu Okamura,
Stephanie Reich,
Martin Wolf,
Laurenz Rettig,
Ralph Ernstorfer
Abstract:
Hybrid plasmonic devices involve a nanostructured metal supporting localized surface plasmons to amplify light-matter interaction, and a non-plasmonic material to functionalize charge excitations. Application-relevant epitaxial heterostructures, however, give rise to ballistic ultrafast dynamics that challenge the conventional semiclassical understanding of unidirectional nanometal-to-substrate en…
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Hybrid plasmonic devices involve a nanostructured metal supporting localized surface plasmons to amplify light-matter interaction, and a non-plasmonic material to functionalize charge excitations. Application-relevant epitaxial heterostructures, however, give rise to ballistic ultrafast dynamics that challenge the conventional semiclassical understanding of unidirectional nanometal-to-substrate energy transfer. We study epitaxial Au nanoislands on WSe$_2$ with time- and angle-resolved photoemission spectroscopy and femtosecond electron diffraction: this combination of techniques resolves material, energy and momentum of charge-carriers and phonons excited in the heterostructure. We observe a strong non-linear plasmon-exciton interaction that transfers the energy of sub-bandgap photons very efficiently to the semiconductor, leaving the metal cold until non-radiative exciton recombination heats the nanoparticles on hundreds of femtoseconds timescales. Our results resolve a multi-directional energy exchange on timescales shorter than the electronic thermalization of the nanometal. Electron-phonon coupling and diffusive charge-transfer determine the subsequent energy flow. This complex dynamics opens perspectives for optoelectronic and photocatalytic applications, while providing a constraining experimental testbed for state-of-the-art modelling.
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Submitted 29 November, 2022; v1 submitted 8 November, 2022;
originally announced November 2022.
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An efficient low-density grating setup for monochromatization of XUV ultrafast light sources
Authors:
Qinda Guo,
Maciej Dendzik,
Magnus H. Berntsen,
Antonija Grubišić-Čabo,
Cong Li,
Wanyu Chen,
Yang Wang,
Oscar Tjernberg
Abstract:
Ultrafast light sources have become an indispensable tool to access and understand transient phenomenon in material science. However, a simple and easy-to-implement method for harmonic selection, with high transmission efficiency and pulse duration conservation, is still a challenge. Here we showcase and compare two approaches for selecting the desired harmonic from a high harmonic generation sour…
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Ultrafast light sources have become an indispensable tool to access and understand transient phenomenon in material science. However, a simple and easy-to-implement method for harmonic selection, with high transmission efficiency and pulse duration conservation, is still a challenge. Here we showcase and compare two approaches for selecting the desired harmonic from a high harmonic generation source while achieving the above goals. The first approach is the combination of extreme ultraviolet spherical mirrors with transmission filters and the second approach uses a normal-incidence spherical grating. Both solutions target time- and angle-resolved photoemission spectroscopy with photon energies in the 10-20 eV range but are relevant for other experimental techniques as well. The two approaches for harmonic selection are characterized in terms of focusing quality, efficiency, and temporal broadening. It is demonstrated that a focusing grating is able to provide much higher transmission as compared to the mirror+filter approach (3.3 times higher for 10.8 eV and 12.9 times higher for 18.1 eV), with only a slight temporal broadening (6.8% increase) and a somewhat larger spot size (~30% increase). Overall, our study establishes an experimental perspective on the trade-off between a single grating normal incidence monochromator design and the use of filters. As such, it provides a basis for selecting the most appropriate approach in various fields where an easy-to-implement harmonic selection from high harmonic generation is needed.
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Submitted 13 October, 2022;
originally announced October 2022.
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In-situ exfoliation method of large-area 2D materials
Authors:
Antonija Grubišić-Čabo,
Matteo Michiardi,
Charlotte E. Sanders,
Marco Bianchi,
Davide Curcio,
Dibya Phuyal,
Magnus H. Berntsen,
Qinda Guo,
Maciej Dendzik
Abstract:
The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in…
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The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in unveiling new properties of 2D materials but it requires samples to be free of adsorbates. The technique that most easily and readily yields 2dmaterials of highest quality is indubitably mechanical exfoliation from bulk grown samples, however as this technique is traditionally done in dedicated environment, the transfer of these samples into UHV setups requires some form of surface cleaning that tempers with the sample quality. In this article, we report on a simple and general method of \textit{in-situ} mechanical exfoliation directly in UHV that yields large-area single-layered films. By employing standard UHV cleaning techniques and by purpusedly exploiting the chemical affinity between the substrate and the sample we could yield large area exfoliation of transition metal dichalcogenides. Multiple transition metal dichalcogenides, both metallic and semiconducting, are exfoliated \textit{in-situ} onto Au and Ag, and Ge. Exfoliated flakes are found to be sub-milimeter size with excellent crystallinity and purity, as evidenced by angle-resolved photoemission spectroscopy, atomic force microscopy and low-energy electron diffraction. In addition, we demonstrate exfoliation of air-sensitive 2D materials and possibility of controlling the substrate-2D material twist angle.
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Submitted 29 September, 2022;
originally announced September 2022.
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A narrow bandwidth extreme ultra-violet light source for time- and angle-resolved photoemission spectroscopy
Authors:
Qinda Guo,
Maciej Dendzik,
Antonija Grubišić-Čabo,
Magnus H. Berntsen,
Cong Li,
Wanyu Chen,
Bharti Matta,
Ulrich Starke,
Björn Hessmo,
Jonas Weissenrieder,
Oscar Tjernberg
Abstract:
Here we present a high repetition rate, narrow band-width, extreme ultraviolet (XUV) photon source for time- and angle-resolved photoemission spectroscopy (tr-ARPES). The narrow band width pulses $ΔE=9, 14, 18$ meV for photon energies $hν=10.8, 18.1, 25.3$ eV are generated through High Harmonic Generation (HHG) using ultra-violet (UV) drive pulses with relatively long pulse lengths (461 fs). The H…
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Here we present a high repetition rate, narrow band-width, extreme ultraviolet (XUV) photon source for time- and angle-resolved photoemission spectroscopy (tr-ARPES). The narrow band width pulses $ΔE=9, 14, 18$ meV for photon energies $hν=10.8, 18.1, 25.3$ eV are generated through High Harmonic Generation (HHG) using ultra-violet (UV) drive pulses with relatively long pulse lengths (461 fs). The HHG setup employs an annuluar drive beam in a tight focusing geometry at a repetition rate of 250 kHz. Photon energy selection is provided by a series of selectable multilayer bandpass mirrors and thin film filters, thus avoiding any time broadening introduced by single grating monochromators. A two stage optical-parametric amplifier provides $< 100$ fs tunable pump pulses from 0.65 $μ$m to 9 $μ$m. The narrow bandwidth performance of the light source is demonstrated through ARPES measurements on a series of quantum materials including the high-temperature superconductor Bi-2212, WSe$_2$ and graphene.
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Submitted 1 May, 2022; v1 submitted 28 January, 2022;
originally announced January 2022.
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Spectroscopic Evidence for a Three-Dimensional Charge Density Wave in Kagome Superconductor CsV$_3$Sb$_5$
Authors:
Cong Li,
Xianxin Wu,
Hongxiong Liu,
Craig Polley,
Qinda Guo,
Yang Wang,
Xinloong Han,
Maciej Dendzik,
Magnus H. Berntsen,
Balasubramanian Thiagarajan,
Youguo Shi,
Andreas P. Schnyder,
Oscar Tjernberg
Abstract:
The recently discovered AV3Sb5 (A=K, Rb, Cs) family, possessing V kagome nets, has received considerable attention due to the topological electronic structure and intriguing correlated phenomena, including an exotic charge density wave (CDW) and superconductivity. Detailed electronic structure studies are essential to unravel the characteristics and origin of the CDW as well as its interplay with…
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The recently discovered AV3Sb5 (A=K, Rb, Cs) family, possessing V kagome nets, has received considerable attention due to the topological electronic structure and intriguing correlated phenomena, including an exotic charge density wave (CDW) and superconductivity. Detailed electronic structure studies are essential to unravel the characteristics and origin of the CDW as well as its interplay with superconductivity. Here, we present angle-resolved photoemission spectroscopy (ARPES) measurements for CsV3Sb5 at multiple temperatures and photon energies to reveal the nature of the CDW from an electronic structure perspective. We present evidence for a three-dimensional (3D) CDW order. In the process we also pinpoint a surface state attributed to a Cs terminated surface. This state was previously attributed to band folding band due to a CDW along the c direction or a quantum well state from quantum confinement. The CDW expected 2-fold lattice reconstruction along c axis is observed to be a quadrupling of the unit cell, thus for the first time directly demonstrating the 3D nature of the CDW from the electronic structure perspective. Moreover, this 3D CDW configuration originates from two distinct types of distortions in adjacent kagome layers. These present results not only provide key insights into the nature of the unconventional CDW in CsV3Sb5 but also provides an important reference for further studies on the relationship between the CDW and superconductivity.
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Submitted 13 December, 2021;
originally announced December 2021.
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Ultrafast Momentum-resolved Hot Electron Dynamics in the Two-dimensional Topological Insulator Bismuthene
Authors:
J. Maklar,
R. Stühler,
M. Dendzik,
T. Pincelli,
S. Dong,
S. Beaulieu,
A. Neef,
G. Li,
M. Wolf,
R. Ernstorfer,
R. Claessen,
L. Rettig
Abstract:
Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on topologically-protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted characterization of their dynamical pr…
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Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on topologically-protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted characterization of their dynamical properties. Here, we report on the electron dynamics of the novel room-temperature QSH candidate bismuthene after photoexcitation using time- and angle-resolved photoemission spectroscopy. We map the transiently occupied conduction band and track the full relaxation pathway of hot photocarriers. Intriguingly, we observe photocarrier lifetimes much shorter than in \red{conventional} semiconductors. This is ascribed to the presence of topological in-gap states already established by local probes. Indeed, we find spectral signatures consistent with these earlier findings. Demonstration of the large band gap and the view into photoelectron dynamics mark a critical step toward optical control of QSH functionalities.
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Submitted 11 June, 2022; v1 submitted 20 August, 2021;
originally announced August 2021.
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Observation of ultrafast interfacial Meitner-Auger energy transfer in a van der Waals heterostructure
Authors:
Shuo Dong,
Samuel Beaulieu,
Malte Selig,
Philipp Rosenzweig,
Dominik Christiansen,
Tommaso Pincelli,
Maciej Dendzik,
Jonas D. Ziegler,
Julian Maklar,
R. Patrick Xian,
Alexander Neef,
Avaise Mohammed,
Armin Schulz,
Mona Stadler,
Michael Jetter,
Peter Michler,
Takashi Taniguchi,
Kenji Watanabe,
Hidenori Takagi,
Ulrich Starke,
Alexey Chernikov,
Martin Wolf,
Hiro Nakamura,
Andreas Knorr,
Laurenz Rettig
, et al. (1 additional authors not shown)
Abstract:
Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer ele…
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Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe$_2$/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe$_2$ is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe$_2$. By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe$_2$ to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures.
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Submitted 29 May, 2022; v1 submitted 15 August, 2021;
originally announced August 2021.
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Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
Authors:
P. Majchrzak,
K. Volckaert,
A. G. Cabo,
D. Biswas,
M. Bianchi,
S. K. Mahatha,
M. Dendzik,
F. Andreatta,
S. S. Grønborg,
I. Marković,
J. M. Riley,
J. C. Johannsen,
D. Lizzit,
L. Bignardi,
S. Lizzit,
C. Cacho,
O. Alexander,
D. Matselyukh,
A. S. Wyatt,
R. T. Chapman,
E. Springate,
J. V. Lauritsen,
P. D. C. King,
C. E. Sanders,
J. A. Miwa
, et al. (2 additional authors not shown)
Abstract:
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing…
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The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
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Submitted 31 March, 2021;
originally announced March 2021.
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Direct measurement of key exciton properties: energy, dynamics and spatial distribution of the wave function
Authors:
Shuo Dong,
Michele Puppin,
Tommaso Pincelli,
Samuel Beaulieu,
Dominik Christiansen,
Hannes Hubener,
Christopher W. Nicholson,
R. Patrick Xian,
Maciej Dendzik,
Yunpei Deng,
Yoav William Windsor,
Malte Selig,
Ermin Malic,
Angel Rubio,
Andreas Knorr,
Martin Wolf,
Laurenz Rettig,
Ralph Ernstorfer
Abstract:
Excitons, Coulomb-bound electron-hole pairs, are the fundamental excitations governing the optoelectronic properties of semiconductors. While optical signatures of excitons have been studied extensively, experimental access to the excitonic wave function itself has been elusive. Using multidimensional photoemission spectroscopy, we present a momentum-, energy- and time-resolved perspective on exci…
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Excitons, Coulomb-bound electron-hole pairs, are the fundamental excitations governing the optoelectronic properties of semiconductors. While optical signatures of excitons have been studied extensively, experimental access to the excitonic wave function itself has been elusive. Using multidimensional photoemission spectroscopy, we present a momentum-, energy- and time-resolved perspective on excitons in the layered semiconductor WSe$_2$. By tuning the excitation wavelength, we determine the energy-momentum signature of bright exciton formation and its difference from conventional single-particle excited states. The multidimensional data allows to retrieve fundamental exciton properties like the binding energy and the exciton-lattice coupling and to reconstruct the real-space excitonic distribution function via Fourier transform. All quantities are in excellent agreement with microscopic calculations. Our approach provides a full characterization of the exciton properties and is applicable to bright and dark excitons in semiconducting materials, heterostructures and devices.
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Submitted 4 May, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
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A quantitative comparison of time-of-flight momentum microscopes and hemispherical analyzers for time- and angle-resolved photoemission spectroscopy experiments
Authors:
J. Maklar,
S. Dong,
S. Beaulieu,
T. Pincelli,
M. Dendzik,
Y. W. Windsor,
R. P. Xian,
M. Wolf,
R. Ernstorfer,
L. Rettig
Abstract:
Time-of-flight-based momentum microscopy has a growing presence in photoemission studies, as it enables parallel energy- and momentum-resolved acquisition of the full photoelectron distribution. Here, we report table-top extreme ultraviolet (XUV) time- and angle-resolved photoemission spectroscopy (trARPES) featuring both a hemispherical analyzer and a momentum microscope within the same setup. We…
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Time-of-flight-based momentum microscopy has a growing presence in photoemission studies, as it enables parallel energy- and momentum-resolved acquisition of the full photoelectron distribution. Here, we report table-top extreme ultraviolet (XUV) time- and angle-resolved photoemission spectroscopy (trARPES) featuring both a hemispherical analyzer and a momentum microscope within the same setup. We present a systematic comparison of the two detection schemes and quantify experimentally relevant parameters, including pump- and probe-induced space-charge effects, detection efficiency, photoelectron count rates, and depth of focus. We highlight the advantages and limitations of both instruments based on exemplary trARPES measurements of bulk WSe2. Our analysis demonstrates the complementary nature of the two spectrometers for time-resolved ARPES experiments. Their combination in a single experimental apparatus allows us to address a broad range of scientific questions with trARPES.
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Submitted 14 December, 2020; v1 submitted 13 August, 2020;
originally announced August 2020.
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Revealing Hidden Orbital Pseudospin Texture with Time-Reversal Dichroism in Photoelectron Angular Distributions
Authors:
Samuel Beaulieu,
Jakub Schusser,
Shuo Dong,
Michael Schüler,
Tommaso Pincelli,
Maciej Dendzik,
Julian Maklar,
Alexander Neef,
Hubert Ebert,
Karol Hricovini,
Martin Wolf,
Jürgen Braun,
Laurenz Rettig,
Jan Minár,
Ralph Ernstorfer
Abstract:
We performed angle-resolved photoemission spectroscopy (ARPES) of bulk 2H-WSe$_2$ for different crystal orientations linked to each other by time-reversal symmetry. We introduce a new observable called time-reversal dichroism in photoelectron angular distributions (TRDAD), which quantifies the modulation of the photoemission intensity upon effective time-reversal operation. We demonstrate that the…
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We performed angle-resolved photoemission spectroscopy (ARPES) of bulk 2H-WSe$_2$ for different crystal orientations linked to each other by time-reversal symmetry. We introduce a new observable called time-reversal dichroism in photoelectron angular distributions (TRDAD), which quantifies the modulation of the photoemission intensity upon effective time-reversal operation. We demonstrate that the hidden orbital pseudospin texture leaves its imprint onto TRDAD, due to multiple orbitals interference effects in photoemission. Our experimental results are in quantitative agreement with both tight-binding model and state-of-the-art fully relativistic calculations performed using the one-step model of photoemission. While spin-resolved ARPES probes the spin component of entangled spin-orbital texture in multiorbital systems, we unambiguously demonstrate that TRDAD reveals its orbital pseudospin texture counterpart.
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Submitted 27 August, 2020; v1 submitted 2 June, 2020;
originally announced June 2020.
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A machine learning route between band mapping and band structure
Authors:
Rui Patrick Xian,
Vincent Stimper,
Marios Zacharias,
Maciej Dendzik,
Shuo Dong,
Samuel Beaulieu,
Bernhard Schölkopf,
Martin Wolf,
Laurenz Rettig,
Christian Carbogno,
Stefan Bauer,
Ralph Ernstorfer
Abstract:
Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting quasiparticle dispersion (closely related to BS) from photoemission band mapping data is currently limited by the available computational methods.…
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Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting quasiparticle dispersion (closely related to BS) from photoemission band mapping data is currently limited by the available computational methods. To cope with the growing size and scale of photoemission data, we develop a pipeline including probabilistic machine learning and the associated data processing, optimization and evaluation methods for band structure reconstruction, leveraging theoretical calculations. The pipeline reconstructs all 14 valence bands of a semiconductor and shows excellent performance on benchmarks and other materials datasets. The reconstruction uncovers previously inaccessible momentum-space structural information on both global and local scales, while realizing a path towards integration with materials science databases. Our approach illustrates the potential of combining machine learning and domain knowledge for scalable feature extraction in multidimensional data.
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Submitted 15 November, 2022; v1 submitted 20 May, 2020;
originally announced May 2020.
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Observation of an excitonic Mott transition through ultrafast core-$\textit{cum}$-conduction photoemission spectroscopy
Authors:
Maciej Dendzik,
R. Patrick Xian,
Enrico Perfetto,
Davide Sangalli,
Dmytro Kutnyakhov,
Shuo Dong,
Samuel Beaulieu,
Tommaso Pincelli,
Federico Pressacco,
Davide Curcio,
Steinn Ymir Agustsson,
Michael Heber,
Jasper Hauer,
Wilfried Wurth,
Günter Brenner,
Yves Acremann,
Philip Hofmann,
Martin Wolf,
Andrea Marini,
Gianluca Stefanucci,
Laurenz Rettig,
Ralph Ernstorfer
Abstract:
Time-resolved soft-X-ray photoemission spectroscopy is used to simultaneously measure the ultrafast dynamics of core-level spectral functions and excited states upon excitation of excitons in WSe$_2$. We present a many-body approximation for the Green's function, which excellently describes the transient core-hole spectral function. The relative dynamics of excited-state signal and core levels rev…
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Time-resolved soft-X-ray photoemission spectroscopy is used to simultaneously measure the ultrafast dynamics of core-level spectral functions and excited states upon excitation of excitons in WSe$_2$. We present a many-body approximation for the Green's function, which excellently describes the transient core-hole spectral function. The relative dynamics of excited-state signal and core levels reveals a delayed core-hole renormalization due to screening by excited quasi-free carriers, revealing an excitonic Mott transition. These findings establish time-resolved core-level photoelectron spectroscopy as a sensitive probe of subtle electronic many-body interactions and an ultrafast electronic phase transition.
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Submitted 28 March, 2020;
originally announced March 2020.
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Ultrafast Dynamical Lifshitz Transition
Authors:
Samuel Beaulieu,
Shuo Dong,
Nicolas Tancogne-Dejean,
Maciej Dendzik,
Tommaso Pincelli,
Julian Maklar,
R. Patrick Xian,
Michael A. Sentef,
Martin Wolf,
Angel Rubio,
Laurenz Rettig,
Ralph Ernstorfer
Abstract:
Fermi surface is at the heart of our understanding of metals and strongly correlated many-body systems. An abrupt change in the Fermi surface topology, also called Lifshitz transition, can lead to the emergence of fascinating phenomena like colossal magnetoresistance and superconductivity. While Lifshitz transitions have been demonstrated for a broad range of materials by equilibrium tuning of mac…
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Fermi surface is at the heart of our understanding of metals and strongly correlated many-body systems. An abrupt change in the Fermi surface topology, also called Lifshitz transition, can lead to the emergence of fascinating phenomena like colossal magnetoresistance and superconductivity. While Lifshitz transitions have been demonstrated for a broad range of materials by equilibrium tuning of macroscopic parameters such as strain, doping, pressure and temperature, a non-equilibrium dynamical route toward ultrafast modification of the Fermi surface topology has not been experimentally demonstrated. Combining time-resolved multidimensional photoemission spectroscopy with state-of-the-art TDDFT+$U$ simulations, we introduce a novel scheme for driving an ultrafast Lifshitz transition in the correlated type-II Weyl semimetal T$\mathrm{_{d}}$-MoTe$_{2}$. We demonstrate that this non-equilibrium topological electronic transition finds its microscopic origin in the dynamical modification of the effective electronic correlations. These results shed light on a novel ultrafast scheme for controlling the Fermi surface topology in correlated quantum materials.
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Submitted 15 February, 2021; v1 submitted 9 March, 2020;
originally announced March 2020.
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An open-source, end-to-end workflow for multidimensional photoemission spectroscopy
Authors:
Rui Patrick Xian,
Yves Acremann,
Steinn Ymir Agustsson,
Maciej Dendzik,
Kevin Bühlmann,
Davide Curcio,
Dmytro Kutnyakhov,
Frederico Pressacco,
Michael Heber,
Shuo Dong,
Tommaso Pincelli,
Jure Demsar,
Wilfried Wurth,
Philip Hofmann,
Martin Wolf,
Markus Scheidgen,
Laurenz Rettig,
Ralph Ernstorfer
Abstract:
Characterization of the electronic band structure of solid state materials is routinely performed using photoemission spectroscopy. Recent advancements in short-wavelength light sources and electron detectors give rise to multidimensional photoemission spectroscopy, allowing parallel measurements of the electron spectral function simultaneously in energy, two momentum components and additional phy…
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Characterization of the electronic band structure of solid state materials is routinely performed using photoemission spectroscopy. Recent advancements in short-wavelength light sources and electron detectors give rise to multidimensional photoemission spectroscopy, allowing parallel measurements of the electron spectral function simultaneously in energy, two momentum components and additional physical parameters with single-event detection capability. Efficient processing of the photoelectron event streams at a rate of up to tens of megabytes per second will enable rapid band mapping for materials characterization. We describe an open-source workflow that allows user interaction with billion-count single-electron events in photoemission band mapping experiments, compatible with beamlines at $3^{\text{rd}}$ and $4^{\text{th}}$ generation light sources and table-top laser-based setups. The workflow offers an end-to-end recipe from distributed operations on single-event data to structured formats for downstream scientific tasks and storage to materials science database integration. Both the workflow and processed data can be archived for reuse, providing the infrastructure for documenting the provenance and lineage of photoemission data for future high-throughput experiments.
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Submitted 14 November, 2020; v1 submitted 17 September, 2019;
originally announced September 2019.
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Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser
Authors:
Dmytro Kutnyakhov,
Rui Patrick Xian,
Maciej Dendzik,
Michael Heber,
Federico Pressacco,
Steinn Ymir Agustsson,
Lukas Wenthaus,
Holger Meyer,
Sven Gieschen,
Giuseppe Mercurio,
Adrian Benz,
Kevin Bühlman,
Simon Däster,
Rafael Gort,
Davide Curcio,
Klara Volckaert,
Marco Bianchi,
Charlotte Sanders,
Jill Atsuko Miwa,
Søren Ulstrup,
Andreas Oelsner,
Christian Tusche,
Ying-Jiun Chen,
Dmitrii Vasilyev,
Katerina Medjanik
, et al. (16 additional authors not shown)
Abstract:
Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectro…
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Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical and structural analysis requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. The PG2 beamline at FLASH (DESY, Hamburg) provides a high pulse rate of 5000 pulses/s, 60 fs pulse duration and 40 meV bandwidth in an energy range of 25-830 eV with a photon beam size down to 50 microns in diameter. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that combines FEL capabilities together with a multidimensional recording scheme for photoemission studies. We use a full-field imaging momentum microscope with time-of-flight energy recording as the detector for mapping of 3D band structures in ($k_x$, $k_y$, $E$) parameter space with unprecedented efficiency. Our instrument can image full surface Brillouin zones with up to 7 Å $^{-1}$ diameter in a binding-energy range of several eV, resolving about $2.5\times10^5$ data voxels. As an example, we present results for the ultrafast excited state dynamics in the model van der Waals semiconductor WSe$_2$.
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Submitted 18 September, 2019; v1 submitted 28 June, 2019;
originally announced June 2019.
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Quasi-free-standing single-layer WS2 achieved by intercalation
Authors:
Sanjoy K. Mahatha,
Maciej Dendzik,
Charlotte E. Sanders,
Matteo Michiardi,
Marco Bianchi,
Jill A. Miwa,
Philip Hofmann
Abstract:
Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effec…
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Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effects, resulting in the deterioration of the single-layer's native properties. This dilemma can potentially be solved by decoupling the single-layer from the substrate surface after the growth via intercalation of atoms or molecules. Here we show that such a decoupling can indeed be achieved for single-layer WS2 epitaxially grown on Ag(111) by intercalation of Bi atoms. This process leads to a suppression of the single-layer WS2-Ag substrate interaction, yielding an electronic band structure reminiscent of free-standing single-layer WS2.
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Submitted 14 November, 2018;
originally announced November 2018.
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Spin structure of K valleys in single-layer WS$_2$ on Au(111)
Authors:
Philipp Eickholt,
Charlotte Sanders,
Maciej Dendzik,
Luca Bignardi,
Daniel Lizzit,
Silvano Lizzit,
Albert Bruix,
Philip Hofmann,
Markus Donath
Abstract:
The spin structure of the valence and conduction bands at the $\overline{\text{K}}$ and $\overline{\text{K}}$' valleys of single-layer WS$_2$ on Au(111) is determined by spin- and angle-resolved photoemission and inverse photoemission. The bands confining the direct band gap of 1.98 eV are out-of-plane spin polarized with spin-dependent energy splittings of 417 meV in the valence band and 16 meV i…
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The spin structure of the valence and conduction bands at the $\overline{\text{K}}$ and $\overline{\text{K}}$' valleys of single-layer WS$_2$ on Au(111) is determined by spin- and angle-resolved photoemission and inverse photoemission. The bands confining the direct band gap of 1.98 eV are out-of-plane spin polarized with spin-dependent energy splittings of 417 meV in the valence band and 16 meV in the conduction band. The sequence of the spin-split bands is the same in the valence and in the conduction bands and opposite at the $\overline{\text{K}}$ and the $\overline{\text{K}}$' high-symmetry points. The first observation explains "dark" excitons discussed in optical experiments, the latter points to coupled spin and valley physics in electron transport. The experimentally observed band dispersions are discussed along with band structure calculations for a freestanding single layer and for a single layer on Au(111).
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Submitted 1 October, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
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Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Authors:
Luca Bignardi,
Daniel Lizzit,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Moritz Ewert,
Lars Buß,
Jens Falta,
Jan Ingo Flege,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, s…
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We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
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Submitted 19 September, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Novel single-layer vanadium sulphide phases
Authors:
Fabian Arnold,
Raluca-Maria Stan,
Sanjoy K. Mahatha,
H. E. Lund,
Davide Curcio,
Maciej Dendzik,
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Daniel Lizzit,
Zheshen Li,
Marco Bianchi,
Jill A. Miwa,
Martin Bremholm,
Silvano Lizzit,
Philip Hofmann,
C. E. Sanders
Abstract:
VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new…
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VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.
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Submitted 21 March, 2018;
originally announced March 2018.
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Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers
Authors:
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Daniel Lizzit,
Francesco Presel,
Dario De Angelis,
Nicoleta Apostol,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Rosanna Larciprete,
Alessandro Baraldi,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- a…
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We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.
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Submitted 9 February, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$
Authors:
Maciej Dendzik,
Albert Bruix,
Matteo Michiardi,
Arlette S. Ngankeu,
Marco Bianchi,
Jill A. Miwa,
Bjørk Hammer,
Philip Hofmann,
Charlotte E. Sanders
Abstract:
Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal transition in the two-dimensional material--a finding which points the way to a possible method of achieving low-resistance junctions. Specifically, si…
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Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal transition in the two-dimensional material--a finding which points the way to a possible method of achieving low-resistance junctions. Specifically, single-layer WS$_2$ undergoes a semiconductor-to-metal transition when epitaxially grown on Ag(111), while it remains a direct band gap semiconductor on Au(111). The metallicity of the single layer on Ag(111) is established by lineshape analysis of core level photoemission spectra. Angle-resolved photoemission spectroscopy locates the metallic states near the Q point of the WS$_2$ Brillouin zone. Density functional theory calculations show that the metallic states arise from hybridization between Ag bulk bands and the local conduction band minimum of WS$_2$ near the Q point.
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Submitted 9 August, 2017;
originally announced August 2017.
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Electron-phonon coupling in the spin-split valence band of single layer WS$_2$
Authors:
Nicki Frank Hinsche,
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Antonija Grubišić Čabo,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Kristian Sommer Thygesen,
Philip Hofmann
Abstract:
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud…
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The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
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Submitted 17 June, 2017;
originally announced June 2017.
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Reconstruction-induced trefoil knot Fermi contour of Au(111)
Authors:
Maciej Dendzik,
Marco Bianchi,
Matteo Michiardi,
Charlotte E. Sanders,
Philip Hofmann
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES), we study the effect of the so-called herringbone reconstruction of Au(111) on the dispersion of the free electron-like surface state. While earlier ARPES investigations have only reported a minor interplay of the surface state dispersion and the underlying reconstruction, we show that the uniaxial lattice distortion and the thereby changed r…
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Using angle-resolved photoemission spectroscopy (ARPES), we study the effect of the so-called herringbone reconstruction of Au(111) on the dispersion of the free electron-like surface state. While earlier ARPES investigations have only reported a minor interplay of the surface state dispersion and the underlying reconstruction, we show that the uniaxial lattice distortion and the thereby changed reciprocal lattice for the first atomic layer leads to distinct surface state dispersions around the first order reciprocal lattice points of the three domains, creating a constant energy surface resembling a trefoil knot. The findings resolve the long-standing discrepancy between, on one hand, the reconstruction-induced surface state modifications reported in scanning tunnelling microscopy and first principle calculations and, on the other hand, their conspicuous absence in photoemission.
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Submitted 6 October, 2016;
originally announced October 2016.
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Spin and Valley Control of Free Carriers in Single-Layer WS$_2$
Authors:
Søren Ulstrup,
Antonija Grubišić Čabo,
Deepnarayan Biswas,
Jonathon M. Riley,
Maciej Dendzik,
Charlotte E. Sanders,
Marco Bianchi,
Cephise Cacho,
Dan Matselyukh,
Richard T. Chapman,
Emma Springate,
Phil D. C. King,
Jill A. Miwa,
Philip Hofmann
Abstract:
The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high q…
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The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer of WS$_2$. We observe that the optically generated free hole density in a single valley can be increased by a factor of 2 using a circularly polarized optical excitation. Moreover, we find that by varying the photon energy of the excitation we can tune the free carrier density in a given spin-split state around the valence band maximum of the material. The control of the photon energy and polarization of the excitation thus permits us to selectively excite free electron-hole pairs with a given spin and within a single valley.
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Submitted 21 August, 2016;
originally announced August 2016.
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Crystalline and electronic structure of single-layer TaS$_2$
Authors:
Charlotte E. Sanders,
Maciej Dendzik,
Arlette S. Ngankeu,
Andreas Eich,
Albert Bruix,
Marco Bianchi,
Jill A. Miwa,
Bjørk Hammer,
Alexander A. Khajetoorians,
Philip Hofmann
Abstract:
Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single layer TaS$_2$ is found to be strongly n-doped, with a carrier concentration of 0.3(1) extra e…
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Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single layer TaS$_2$ is found to be strongly n-doped, with a carrier concentration of 0.3(1) extra electrons per unit cell. No superconducting or charge density wave state is observed by scanning tunneling microscopy at temperatures down to 4.7 K.
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Submitted 19 June, 2016;
originally announced June 2016.
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Absence of superconductivity in ultra-thin layers of FeSe synthesized on a topological insulator
Authors:
Andreas Eich,
Nils Rollfing,
Fabian Arnold,
Charlotte Sanders,
Pascal R. Ewen,
Marco Bianchi,
Maciej Dendzik,
Matteo Michiardi,
Jian-Li Mi,
Martin Bremholm,
Daniel Wegner,
Philip Hofmann,
Alexander A. Khajetoorians
Abstract:
The structural and electronic properties of FeSe ultra-thin layers on Bi$_{2}$Se$_{3}$ have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multi-layers, which are predominantly 3-5 monolayers (ML) thick, exhibit a hole pocket-like electron band at \barΓ and a dumbbell-like feature at \bar{M}, similar to…
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The structural and electronic properties of FeSe ultra-thin layers on Bi$_{2}$Se$_{3}$ have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multi-layers, which are predominantly 3-5 monolayers (ML) thick, exhibit a hole pocket-like electron band at \barΓ and a dumbbell-like feature at \bar{M}, similar to multi-layers of FeSe on SrTiO$_{3}$. Moreover, the topological state of the Bi2Se3 is preserved beneath the FeSe layer, as indicated by a heavily \it{n}-doped Dirac cone. Low temperature STS does not exhibit a superconducting gap for any investigated thickness down to a temperature of 5 K.
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Submitted 26 September, 2016; v1 submitted 18 June, 2016;
originally announced June 2016.
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Ultrafast Band Structure Control of a Two-Dimensional Heterostructure
Authors:
Søren Ulstrup,
Antonija Grubišić Čabo,
Jill A. Miwa,
Jonathon M. Riley,
Signe S. Grønborg,
Jens C. Johannsen,
Cephise Cacho,
Oliver Alexander,
Richard T. Chapman,
Emma Springate,
Marco Bianchi,
Maciej Dendzik,
Jeppe V. Lauritsen,
Phil D. C. King,
Philip Hofmann
Abstract:
The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-l…
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The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-layer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS$_2$ on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS$_2$ layer. Following optical excitation, the band gap is reduced by up to $\sim\!$400 meV on femtosecond timescales due to a persistence of strong electronic interactions despite the environmental screening by the $n$-doped graphene. This points to a large degree of tuneability of both the electronic structure and electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.
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Submitted 11 June, 2016;
originally announced June 2016.
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Single-layer MoS$_2$ on Au(111): band gap renormalization and substrate interaction
Authors:
Albert Bruix,
Jill A. Miwa,
Nadine Hauptmann,
Daniel Wegner,
Søren Ulstrup,
Signe S. Grønborg,
Charlotte E. Sanders,
Maciej Dendzik,
Antonija Grubišić Čabo,
Marco Bianchi,
Jeppe V. Lauritsen,
Alexander A. Khajetoorians,
Bjørk Hammer,
Philip Hofmann
Abstract:
The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is…
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The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At $\barΓ$, the valence band maximum has a significantly higher binding energy than in the free MoS$_2$ layer and the expected spin-degeneracy of the uppermost valence band at the $\bar{M}$ point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS$_2$ orbitals with the substrate.
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Submitted 1 January, 2016;
originally announced January 2016.
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Synthesis of Epitaxial Single-Layer MoS$_2$ on Au(111)
Authors:
Signe S. Grønborg,
Søren Ulstrup,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jeppe V. Lauritsen,
Philip Hofmann,
Jill A. Miwa
Abstract:
We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS$_2$ islands to a continuous MoS$_2$ layer. An exceptionally good control over the MoS$_2$ coverage is maintained using an approach b…
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We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS$_2$ islands to a continuous MoS$_2$ layer. An exceptionally good control over the MoS$_2$ coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS$_2$ nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS$_2$ islands, we identify domains rotated by 60$^{\circ}$ that lead to atomically sharp line defects at domain boundaries. As the MoS$_2$ coverage approaches the limit of a complete single-layer, the formation of bilayer MoS$_2$ islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS$_2$ samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS$_2$ layer from vacuum is not found to affect its quality.
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Submitted 23 September, 2015;
originally announced September 2015.
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Growth and electronic structure of epitaxial single-layer WS$_2$ on Au(111)
Authors:
Maciej Dendzik,
Matteo Michiardi,
Charlotte Sanders,
Marco Bianchi,
Jill A. Miwa,
Signe S. Grønborg,
Jeppe Vang Lauritsen,
Philip Hofmann
Abstract:
Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be sign…
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Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be significantly higher than at $\barΓ$. The observed dispersion around $\bar{K}$ is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at $\barΓ$ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the $\bar{K}$ points, with a maximum splitting of 419(11)~meV. The valence band dispersion around $\bar{K}$ is found to be highly anisotropic with spin-branch dependent effective hole masses of $0.40(02)m_e$ and $0.57(09)m_e$ for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS$_2$ a promising alternative to the widely studied MoS$_2$ for applications in electronics, spintronics and valleytronics.
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Submitted 17 September, 2015;
originally announced September 2015.
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Strongly anisotropic spin-orbit splitting in a two-dimensional electron gas
Authors:
Matteo Michiardi,
Marco Bianchi,
Maciej Dendzik,
Jill Miwa,
Moritz Hoesch,
Timur K. Kim,
Peter Matzen,
Jianli Mi,
Martin Bremholm,
Bo Brummerstedt Iversen,
Philip Hofmann
Abstract:
Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction…
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Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction while the states are hardly split along $\barΓ\bar{K}$. The direction of the anisotropy is found to be qualitatively inconsistent with results expected for a third-order anisotropic Rashba Hamiltonian. However, a $\mathbf{k} \cdot \mathbf{p}$ model that includes the possibility of band structure anisotropy as well as both isotropic and anisotropic third order Rashba splitting can explain the results. The isotropic third order contribution to the Rashba Hamiltonian is found to be negative, reducing the energy splitting at high $k$. The interplay of band structure, higher order Rashba effect and tuneable doping offers the opportunity to engineer not only the size of the spin-orbit splitting but also its direction.
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Submitted 26 November, 2014;
originally announced November 2014.
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Electronic Structure of Epitaxial Single-Layer MoS$_2$
Authors:
Jill A. Miwa,
Søren Ulstrup,
Signe G. Sørensen,
Maciej Dendzik,
Antonija Grubišić Čabo,
Marco Bianchi,
Jeppe Vang Lauritsen,
Philip Hofmann
Abstract:
The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39$\pm$0.05)~eV direct band gap at $\bar{K}$ with the valence band top at $\barΓ$ having a significantly higher binding ener…
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The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39$\pm$0.05)~eV direct band gap at $\bar{K}$ with the valence band top at $\barΓ$ having a significantly higher binding energy than at $\bar{K}$. The moiré superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at $\bar{K}$ is found to be lifted by the spin-orbit interaction, leading to a splitting of (145$\pm$4)~meV. This splitting is anisotropic and in excellent agreement with recent calculations. Finally, it is shown that the strength of the potassium doping is $k$-dependent, leading to the possibility of band structure engineering in single-layers of transition metal dichalcogenides.
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Submitted 2 October, 2014;
originally announced October 2014.
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Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
Authors:
J. M. Riley,
F. Mazzola,
M. Dendzik,
M. Michiardi,
T. Takayama,
L. Bawden,
C. Granerød,
M. Leandersson,
T. Balasubramanian,
M. Hoesch,
T. K. Kim,
H. Takagi,
W. Meevasana,
Ph. Hofmann,
M. S. Bahramy,
J. W. Wells,
P. D. C. King
Abstract:
Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we present direct evidence from spin- and angle-resolved photoemission spectroscopy for a strong spin polarisation of b…
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Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we present direct evidence from spin- and angle-resolved photoemission spectroscopy for a strong spin polarisation of bulk states in the centrosymmetric transition-metal dichalcogenide WSe$_2$. We show how this arises due to a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localised, leading to enormous spin splittings up to $\sim\!0.5$ eV, with a spin texture that is strongly modulated in both real and momentum space. As well as providing the first experimental evidence for a recently-predicted `hidden' spin polarisation in inversion-symmetric materials, our study sheds new light on a putative spin-valley coupling in transition-metal dichalcogenides, of key importance for using these compounds in proposed valleytronic devices.
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Submitted 28 August, 2014;
originally announced August 2014.
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Tailoring the electronic texture of a topological insulator via its surface orientation
Authors:
Lucas Barreto,
Wendell Simoes e Silva,
Malthe Stensgaard,
Søren Ulstrup,
Xie-Gang Zhu,
Marco Bianchi,
Maciej Dendzik,
Philip Hofmann
Abstract:
Three dimensional topological insulator crystals consist of an insulating bulk enclosed by metallic surfaces, and detailed theoretical predictions about the surface state band topology and spin texture are available. While several topological insulator materials are currently known, the existence and topology of these metallic states have only ever been probed for one particular surface orientatio…
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Three dimensional topological insulator crystals consist of an insulating bulk enclosed by metallic surfaces, and detailed theoretical predictions about the surface state band topology and spin texture are available. While several topological insulator materials are currently known, the existence and topology of these metallic states have only ever been probed for one particular surface orientation of a given material. For most topological insulators, such as Bi$_{1-x}$Sb$_{x}$ and Bi$_2$Se$_3$, this surface is the closed-packed (111) surface and it supports one topologically guaranteed surface state Dirac cone. Here we experimentally realise a non closed-packed surface of a topological insulator, Bi$_{1-x}$Sb$_{x}$(110), and probe the surface state topology by angle-resolved photoemission. As expected, this surface also supports metallic states but the change in surface orientation drastically modifies the band topology, leading to three Dirac cones instead of one, in excellent agreement with the theoretical predictions but in contrast to any other experimentally studied TI surface. This illustrates the possibility to tailor the basic topological properties of the surface via its crystallographic direction. Here it introduces a valley degree of freedom not previously achieved for topological insulator systems.
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Submitted 2 February, 2013;
originally announced February 2013.
