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Electron-phonon coupling in single-layer MoS2
Authors:
Sanjoy K. Mahatha,
Arlette S. Ngankeu,
Nicki Frank Hinsche,
Ingrid Mertig,
Kevin Guilloy,
Peter L. Matzen,
Marco Bianchi,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Daniel Lizzit,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Philip Hofmann
Abstract:
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye mo…
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The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $λ$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Γ$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
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Submitted 18 November, 2018;
originally announced November 2018.
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Electron-phonon coupling in the spin-split valence band of single layer WS$_2$
Authors:
Nicki Frank Hinsche,
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Antonija Grubišić Čabo,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Kristian Sommer Thygesen,
Philip Hofmann
Abstract:
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud…
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The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
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Submitted 17 June, 2017;
originally announced June 2017.
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Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Authors:
Alban Gassenq,
Kevin Guilloy,
Nicolas Pauc,
Denis Rouchon,
Julie Widiez,
Johan Rothman,
Jean-Michel Hartmann,
Alexei Chelnokov,
Vincent Reboud,
Vincent Calvo
Abstract:
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be the…
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Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated strained-Ge on Si platform for mid-infrared integrated optics.
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Submitted 18 May, 2017;
originally announced May 2017.
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Quasi one-dimensional metallic band dispersion in the commensurate charge density wave of $1T$-TaS$_2$
Authors:
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Marco Bianchi,
Charlotte E. Sanders,
Kai Rossnagel,
Jill A. Miwa,
Philip Hofmann
Abstract:
The commensurate charge density wave (CDW) in the layered compound $1T$-TaS$_2$ has hitherto mostly been treated as a quasi two-dimensional phenomenon. Recent band structure calculations have, however, predicted that the CDW coexists with a nearly one-dimensional metallic dispersion perpendicular to the crystal planes. Using synchrotron radiation based angle-resolved photoemission spectroscopy, we…
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The commensurate charge density wave (CDW) in the layered compound $1T$-TaS$_2$ has hitherto mostly been treated as a quasi two-dimensional phenomenon. Recent band structure calculations have, however, predicted that the CDW coexists with a nearly one-dimensional metallic dispersion perpendicular to the crystal planes. Using synchrotron radiation based angle-resolved photoemission spectroscopy, we show that this metallic band does in fact exist. Its occupied band width is in excellent agreement with predictions for a simple $τ_c$ stacking order of the CDW between adjacent layers and its periodicity in the $c$ direction is $2 π/ c$.
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Submitted 1 May, 2017;
originally announced May 2017.
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Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
Authors:
V. Reboud,
A. Gassenq,
N. Pauc,
J. Aubin,
L. Milord,
Q. M. Thai,
M. Bertrand,
K. Guilloy,
D. Rouchon,
J. Rothman,
T. Zabel,
F. Armand Pilon,
H. Sigg,
A. Chelnokov,
J. M. Hartmann,
V. Calvo
Abstract:
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu…
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Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.
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Submitted 21 April, 2017;
originally announced April 2017.
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Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
Authors:
A. Gassenq,
L. Milord,
J. Aubin,
N. Pauc,
K. Guilloy,
J. Rothman,
D. Rouchon,
A. Chelnokov,
J. M. Hartmann,
V. Reboud,
V. Calvo
Abstract:
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be…
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GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn<8%) or on GeSiSn layers. In this work, we have calibrated the GeSn Raman relationship for really high Sn content GeSn binaries (6<xSn<15%). We have used fully strained GeSn layers and fully relaxed GeSn under-etched microstructures to clearly differentiate the contributions of strain and chemical composition on the Ge-Ge Raman spectral shift. We have shown that the GeSn Raman-strain coefficient for high Sn contents is higher compared to that for pure Ge.
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Submitted 13 January, 2017;
originally announced January 2017.
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Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
Authors:
K. Guilloy,
N. Pauc,
A. Gassenq,
Y. M. Niquet,
J. M. Escalante,
I. Duchemin,
S. Tardif,
G. Osvaldo Dias,
D. Rouchon,
J. Widiez,
J. M. Hartmann,
R. Geiger,
T. Zabel,
H. Sigg,
J. Faist,
A. Chelnokov,
V. Reboud,
V. Calvo
Abstract:
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 %…
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Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Γ$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium.
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Submitted 24 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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Accurate strain measurements in highly strained Ge microbridges
Authors:
A. Gassenq,
S. Tardif,
K. Guilloy,
G. Osvaldo Dias,
N. Pauc,
I. Duchemin,
D. Rouchon,
J-M. Hartmann,
J. Widiez,
J. Escalante,
Y-M. Niquet,
R. Geiger,
T. Zabel,
H. Sigg,
J. Faist,
A. Chelnokov,
F. Rieutord,
V. Reboud,
V. Calvo
Abstract:
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron b…
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Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression.
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Submitted 15 April, 2016;
originally announced April 2016.
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Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering
Authors:
Samuel Tardif,
Alban Gassenq,
Kevin Guilloy,
Nicolas Pauc,
Guilherme Osvaldo Dias,
Jean-Michel Hartmann,
Julie Widiez,
Thomas Zabel,
Esteban Marin,
Hans Sigg,
Jérôme Faist,
Alexei Chelnokov,
Vincent Reboud,
Vincent Calvo,
Jean-Sébastien Micha,
Odile Robach,
François Rieutord
Abstract:
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mappi…
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Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.
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Submitted 24 June, 2016; v1 submitted 21 March, 2016;
originally announced March 2016.
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Uniaxially stressed germanium with fundamental direct band gap
Authors:
R. Geiger,
T. Zabel,
E. Marin,
A. Gassenq,
J. -M. Hartmann,
J. Widiez,
J. Escalante,
K. Guilloy,
N. Pauc,
D. Rouchon,
G. Osvaldo Diaz,
S. Tardif,
F. Rieutord,
I. Duchemin,
Y. -M. Niquet,
V. Reboud,
V. Calvo,
A. Chelnokov,
J. Faist,
H. Sigg
Abstract:
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a…
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We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
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Submitted 10 December, 2015;
originally announced March 2016.
