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A national longitudinal dataset of skills taught in U.S. higher education curricula
Authors:
Alireza Javadian Sabet,
Sarah H. Bana,
Renzhe Yu,
Morgan R. Frank
Abstract:
Higher education plays a critical role in driving an innovative economy by equipping students with knowledge and skills demanded by the workforce. While researchers and practitioners have developed data systems to track detailed occupational skills, such as those established by the U.S. Department of Labor (DOL), much less effort has been made to document skill development in higher education at a…
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Higher education plays a critical role in driving an innovative economy by equipping students with knowledge and skills demanded by the workforce. While researchers and practitioners have developed data systems to track detailed occupational skills, such as those established by the U.S. Department of Labor (DOL), much less effort has been made to document skill development in higher education at a similar granularity. Here, we fill this gap by presenting a longitudinal dataset of skills inferred from over three million course syllabi taught at nearly three thousand U.S. higher education institutions. To construct this dataset, we apply natural language processing to extract from course descriptions detailed workplace activities (DWAs) used by the DOL to describe occupations. We then aggregate these DWAs to create skill profiles for institutions and academic majors. Our dataset offers a large-scale representation of college-educated workers and their role in the economy. To showcase the utility of this dataset, we use it to 1) compare the similarity of skills taught and skills in the workforce according to the US Bureau of Labor Statistics, 2) estimate gender differences in acquired skills based on enrollment data, 3) depict temporal trends in the skills taught in social science curricula, and 4) connect college majors' skill distinctiveness to salary differences of graduates. Overall, this dataset can enable new research on the source of skills in the context of workforce development and provide actionable insights for shaping the future of higher education to meet evolving labor demands especially in the face of new technologies.
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Submitted 19 April, 2024;
originally announced April 2024.
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Deep Reinforcement Learning-Based Approach for a Single Vehicle Persistent Surveillance Problem with Fuel Constraints
Authors:
Manav Mishra,
Hritik Bana,
Saswata Sarkar,
Sujeevraja Sanjeevi,
PB Sujit,
Kaarthik Sundar
Abstract:
This article presents a deep reinforcement learning-based approach to tackle a persistent surveillance mission requiring a single unmanned aerial vehicle initially stationed at a depot with fuel or time-of-flight constraints to repeatedly visit a set of targets with equal priority. Owing to the vehicle's fuel or time-of-flight constraints, the vehicle must be regularly refueled, or its battery mus…
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This article presents a deep reinforcement learning-based approach to tackle a persistent surveillance mission requiring a single unmanned aerial vehicle initially stationed at a depot with fuel or time-of-flight constraints to repeatedly visit a set of targets with equal priority. Owing to the vehicle's fuel or time-of-flight constraints, the vehicle must be regularly refueled, or its battery must be recharged at the depot. The objective of the problem is to determine an optimal sequence of visits to the targets that minimizes the maximum time elapsed between successive visits to any target while ensuring that the vehicle never runs out of fuel or charge. We present a deep reinforcement learning algorithm to solve this problem and present the results of numerical experiments that corroborate the effectiveness of this approach in comparison with common-sense greedy heuristics.
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Submitted 2 May, 2024; v1 submitted 9 April, 2024;
originally announced April 2024.
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Ecosystem-level Analysis of Deployed Machine Learning Reveals Homogeneous Outcomes
Authors:
Connor Toups,
Rishi Bommasani,
Kathleen A. Creel,
Sarah H. Bana,
Dan Jurafsky,
Percy Liang
Abstract:
Machine learning is traditionally studied at the model level: researchers measure and improve the accuracy, robustness, bias, efficiency, and other dimensions of specific models. In practice, the societal impact of machine learning is determined by the surrounding context of machine learning deployments. To capture this, we introduce ecosystem-level analysis: rather than analyzing a single model,…
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Machine learning is traditionally studied at the model level: researchers measure and improve the accuracy, robustness, bias, efficiency, and other dimensions of specific models. In practice, the societal impact of machine learning is determined by the surrounding context of machine learning deployments. To capture this, we introduce ecosystem-level analysis: rather than analyzing a single model, we consider the collection of models that are deployed in a given context. For example, ecosystem-level analysis in hiring recognizes that a job candidate's outcomes are not only determined by a single hiring algorithm or firm but instead by the collective decisions of all the firms they applied to. Across three modalities (text, images, speech) and 11 datasets, we establish a clear trend: deployed machine learning is prone to systemic failure, meaning some users are exclusively misclassified by all models available. Even when individual models improve at the population level over time, we find these improvements rarely reduce the prevalence of systemic failure. Instead, the benefits of these improvements predominantly accrue to individuals who are already correctly classified by other models. In light of these trends, we consider medical imaging for dermatology where the costs of systemic failure are especially high. While traditional analyses reveal racial performance disparities for both models and humans, ecosystem-level analysis reveals new forms of racial disparity in model predictions that do not present in human predictions. These examples demonstrate ecosystem-level analysis has unique strengths for characterizing the societal impact of machine learning.
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Submitted 3 April, 2024; v1 submitted 11 July, 2023;
originally announced July 2023.
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Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$-Sn
Authors:
Ivan Madarevic,
Umamahesh Thupakula,
Gertjan Lippertz,
Niels Claessens,
Pin-Cheng Lin,
Harsh Bana,
Giovanni Di Santo,
Sara Gonzalez,
Luca Petaccia,
Maya Narayanan Nair,
Lino M. C. Pereira,
Chris Van Haesendonck,
Margriet Van Bael
Abstract:
In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$-Sn film…
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In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$-Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The $α$-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal $α$-Sn above the Fermi level.
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Submitted 23 February, 2020; v1 submitted 3 December, 2019;
originally announced December 2019.
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Electron-phonon coupling in single-layer MoS2
Authors:
Sanjoy K. Mahatha,
Arlette S. Ngankeu,
Nicki Frank Hinsche,
Ingrid Mertig,
Kevin Guilloy,
Peter L. Matzen,
Marco Bianchi,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Daniel Lizzit,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Philip Hofmann
Abstract:
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye mo…
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The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $λ$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Γ$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
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Submitted 18 November, 2018;
originally announced November 2018.
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Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Authors:
Luca Bignardi,
Daniel Lizzit,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Moritz Ewert,
Lars Buß,
Jens Falta,
Jan Ingo Flege,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, s…
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We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
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Submitted 19 September, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Novel single-layer vanadium sulphide phases
Authors:
Fabian Arnold,
Raluca-Maria Stan,
Sanjoy K. Mahatha,
H. E. Lund,
Davide Curcio,
Maciej Dendzik,
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Daniel Lizzit,
Zheshen Li,
Marco Bianchi,
Jill A. Miwa,
Martin Bremholm,
Silvano Lizzit,
Philip Hofmann,
C. E. Sanders
Abstract:
VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new…
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VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.
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Submitted 21 March, 2018;
originally announced March 2018.
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Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers
Authors:
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Daniel Lizzit,
Francesco Presel,
Dario De Angelis,
Nicoleta Apostol,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Rosanna Larciprete,
Alessandro Baraldi,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- a…
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We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.
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Submitted 9 February, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Electron-phonon coupling in the spin-split valence band of single layer WS$_2$
Authors:
Nicki Frank Hinsche,
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Antonija Grubišić Čabo,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Kristian Sommer Thygesen,
Philip Hofmann
Abstract:
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud…
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The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
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Submitted 17 June, 2017;
originally announced June 2017.
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Planar Hall and Nernst effect in patterned ultrathin film of La0.7Sr0.3MnO3
Authors:
Himanshu Sharma,
H. Bana,
C. V. Tomy,
A. Tulapurkar
Abstract:
We present the observation of a transverse thermopower, or Planar Nernst Effect, in patterned ultrathin film (8 nm) of La0.7Sr0.3MnO3 (LSMO) driven by heat current applied in-plane of the film and Planar Hall Effect (PHE) in the same LSMO ultrathin film with in-plane current of 100 microA is also investigated. Even for temperature difference of 5 K the Planar Nernst Effect in ultrathin film (8 nm)…
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We present the observation of a transverse thermopower, or Planar Nernst Effect, in patterned ultrathin film (8 nm) of La0.7Sr0.3MnO3 (LSMO) driven by heat current applied in-plane of the film and Planar Hall Effect (PHE) in the same LSMO ultrathin film with in-plane current of 100 microA is also investigated. Even for temperature difference of 5 K the Planar Nernst Effect in ultrathin film (8 nm) shows a coercivity of 3 Oe same as observed in Planar Hall Effect measurement and confirms the ferromagnetic nature of thin film. The angular dependence of transverse voltages shows four-fold sin{theta} cos{theta} dependence symmetry at 250 K, which is consistent with Planar Hall Effect measurement.
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Submitted 5 June, 2016; v1 submitted 25 January, 2015;
originally announced January 2015.
