Showing 1–30 of 30 results for author: Dreyer, C E

Quantum embedding study of strain and charge induced Stark effects on the NV$^{-}$ center in diamond

Authors: Gabriel I. López-Morales, Joanna M. Zajac, Johannes Flick, Carlos A. Meriles, Cyrus E. Dreyer

Abstract: The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain long… ▽ More The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain longitudinal to the axis of NV$^{-}$ shifts the excited states in energy, while strain with a component transverse to the NV axis splits the degeneracies of the $^{3}E$ and $^{1}E$ states. The largest effects are for the optically relevant $^{3}E$ manifold, which splits into $E_{x}$ and $E_{y}$ with transverse strain. From these responses we extract strain susceptibilities for the $E_{x/y}$ states within the quasi-linear regime. Additionally, we study the many-body dipole matrix elements of the NV$^{-}$ and find a permanent dipole 1.64 D at zero strain, which is $\sim 30 \%$ smaller than that obtained from recent density functional theory calculations. We also determine the transition dipole between the $E_{x}$ and $E_{y}$ and how it evolves with strain. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Probing electric-dipole-enabled transitions in the excited state of the nitrogen-vacancy center in diamond

Authors: Tom Delord, Richard Monge, Gabriel Lopez-Morales, Olaf Bach, Cyrus E. Dreyer, Johannes Flick, Carlos A. Meriles

Abstract: The excited orbitals of color centers typically show stronger electric dipoles, which can serve as a resource for entanglement, emission tuning, or electric field sensing. Here, we use resonant laser excitation to expose strong transition dipoles in the excited state (ES) orbitals of the negatively charged nitrogen vacancy center in diamond. By applying microwave electric fields, we perform strong… ▽ More The excited orbitals of color centers typically show stronger electric dipoles, which can serve as a resource for entanglement, emission tuning, or electric field sensing. Here, we use resonant laser excitation to expose strong transition dipoles in the excited state (ES) orbitals of the negatively charged nitrogen vacancy center in diamond. By applying microwave electric fields, we perform strong Rabi driving between ES orbitals, and show that the dressed states can be tuned in frequency and are protected against fluctuations of the transverse electric field. In contrast with previous results, we observe sharp microwave resonances between magnetic states of the ES orbitals, and find that they are broadened due to simultaneous electric dipole driving. △ Less

Submitted 25 May, 2024; originally announced May 2024.

Downfolding from Ab Initio to Interacting Model Hamiltonians: Comprehensive Analysis and Benchmarking of the DFT+cRPA Approach

Authors: Yueqing Chang, Erik G. C. P. van Loon, Brandon Eskridge, Brian Busemeyer, Miguel A. Morales, Cyrus E. Dreyer, Andrew J. Millis, Shiwei Zhang, Tim O. Wehling, Lucas K. Wagner, Malte Rösner

Abstract: Model Hamiltonians are regularly derived from first-principles data to describe correlated matter. However, the standard methods for this contain a number of largely unexplored approximations. For a strongly correlated impurity model system, here we carefully compare a standard downfolding technique with the best possible ground-truth estimates for charge-neutral excited state energies and wavefun… ▽ More Model Hamiltonians are regularly derived from first-principles data to describe correlated matter. However, the standard methods for this contain a number of largely unexplored approximations. For a strongly correlated impurity model system, here we carefully compare a standard downfolding technique with the best possible ground-truth estimates for charge-neutral excited state energies and wavefunctions using state-of-the-art first-principles many-body wave function approaches. To this end, we use the vanadocene molecule and analyze all downfolding aspects, including the Hamiltonian form, target basis, double counting correction, and Coulomb interaction screening models. We find that the choice of target-space basis functions emerges as a key factor for the quality of the downfolded results, while orbital-dependent double counting correction diminishes the quality. Background screening to the Coulomb interaction matrix elements primarily affects crystal-field excitations. Our benchmark uncovers the relative importance of each downfolding step and offers insights into the potential accuracy of minimal downfolded model Hamiltonians △ Less

Submitted 8 July, 2024; v1 submitted 10 November, 2023; originally announced November 2023.

Comments: 15 pages (+8 pages Supplemental Material), 10 figures

Journal ref: npj Computational Materials volume 10, Article number: 129 (2024)

Adiabatic dynamics of coupled spins and phonons in magnetic insulators

Authors: Shang Ren, John Bonini, Massimiliano Stengel, Cyrus E. Dreyer, David Vanderbilt

Abstract: In conventional \textit{ab initio} methodologies, phonons are calculated by solving equations of motion involving static interatomic force constants and atomic masses. The Born-Oppenheimer approximation, where all electronic degrees of freedom are assumed to adiabatically follow the nuclear dynamics, is also adopted. This approach does not fully account for the effects of broken time-reversal symm… ▽ More In conventional \textit{ab initio} methodologies, phonons are calculated by solving equations of motion involving static interatomic force constants and atomic masses. The Born-Oppenheimer approximation, where all electronic degrees of freedom are assumed to adiabatically follow the nuclear dynamics, is also adopted. This approach does not fully account for the effects of broken time-reversal symmetry in systems with magnetic order. Recent attempts to rectify this involve the inclusion of the velocity dependence of the interatomic forces in the equations of motion, which accounts for time-reversal symmetry breaking, and can result in chiral phonon modes with non-zero angular momentum even at the zone center. However, since the energy ranges of phonons and magnons typically overlap, the spins cannot be treated as adiabatically following the lattice degrees of freedom. Instead, phonon and spins must be treated on a similar footing. Focusing on zone-center modes, we propose a method involving Hessian matrices and Berry curvature tensors in terms of both phonon and spin degrees of freedom, and describe a first-principles methodology for calculating these. We then solve Lagrange's equations of motion to determine the energies and characters of the mixed excitations, allowing us to quantify, for example, the energy splittings between chiral pairs of phonons in some cases, and the degree of magnetically induced mixing between infrared and Raman modes in others. The approach is general, and can be applied to determine the adiabatic dynamics of any mixed set of slow variables. △ Less

Submitted 4 January, 2024; v1 submitted 11 July, 2023; originally announced July 2023.

Comments: Added a discussion section on the role of SOC and fixed some typos. This article has been accepted by Physical Review X

Journal ref: Phys. Rev. X 14, 011041 (2024)

Fully ab-initio all-electron calculation of dark matter--electron scattering in crystals with evaluation of systematic uncertainties

Authors: Cyrus E. Dreyer, Rouven Essig, Marivi Fernandez-Serra, Aman Singal, Cheng Zhen

Abstract: We calculate target-material responses for dark matter--electron scattering at the \textit{ab-initio} all-electron level using atom-centered gaussian basis sets. The all-electron effects enhance the material response at high momentum transfers from dark matter to electrons, $q\gtrsim \mathcal{O}\left({10\ αm_e}\right)$, compared to calculations using conventional plane wave methods, including thos… ▽ More We calculate target-material responses for dark matter--electron scattering at the \textit{ab-initio} all-electron level using atom-centered gaussian basis sets. The all-electron effects enhance the material response at high momentum transfers from dark matter to electrons, $q\gtrsim \mathcal{O}\left({10\ αm_e}\right)$, compared to calculations using conventional plane wave methods, including those used in QEDark; this enhances the expected event rates at energy transfers $E \gtrsim 10$~eV, especially when scattering through heavy mediators. We carefully test a range of systematic uncertainties in the theory calculation, including those arising from the choice of basis set, exchange-correlation functional, number of unit cells in the Bloch sum, $\mathbf{k}$-mesh, and neglect of scatters with very high momentum transfers. We provide state-of-the-art crystal form factors, focusing on silicon and germanium. Our code and results are made publicly available as a new tool, called Quantum Chemistry Dark (``QCDark''). △ Less

Submitted 26 June, 2023; originally announced June 2023.

Comments: 15 pages, plus references and appendices, 12 figures

Dielectric environment sensitivity of carbon centres in hexagonal boron nitride

Authors: Danis I. Badrtdinov, Carlos Rodriguez-Fernandez, Magdalena Grzeszczyk, Zhizhan Qiu, Kristina Vaklinova, Pengru Huang, Alexander Hampel, Kenji Watanabe, Takashi Taniguchi, Lu Jiong, Marek Potemski, Cyrus E. Dreyer, Maciej Koperski, Malte Rösner

Abstract: A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defec… ▽ More A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect's optoelectronic properties depend on the specifics of the atomic environment. Here we explore the mechanisms by which the environment can influence the properties of carbon impurity centres in hexagonal boron nitride (hBN). We compare the optical and electronic properties of such defects between bulk-like and few-layer films, showing alteration of the zero-phonon line energies, modifications to their phonon sidebands, and enhancements of their inhomogeneous broadenings. To disentangle the various mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening environment of the defect center, we combine ab-initio calculations based on a density-functional theory with a quantum embedding approach. By studying a variety of carbon-based defects embedded in monolayer and bulk hBN, we demonstrate that the dominant effect of the change in the environment is the screening of the density-density Coulomb interactions within and between the defect orbitals. Our comparative analysis of the experimental and theoretical findings paves the way for improved identification of defects in low-dimensional materials and the development of atomic scale sensors of dielectric environments. △ Less

Submitted 14 May, 2023; originally announced May 2023.

Comments: 38 pages, 7 figures

Frequency splitting of chiral phonons from broken time reversal symmetry in CrI$_3$

Authors: John Bonini, Shang Ren, David Vanderbilt, Massimiliano Stengel, Cyrus E. Dreyer, Sinisa Coh

Abstract: Conventional approaches for lattice dynamics based on static interatomic forces do not fully account for the effects of time-reversal-symmetry breaking in magnetic systems. Recent approaches to rectify this involve incorporating the first-order change in forces with atomic velocities under the assumption of adiabatic separation of electronic and nuclear degrees of freedom. In this work, we develop… ▽ More Conventional approaches for lattice dynamics based on static interatomic forces do not fully account for the effects of time-reversal-symmetry breaking in magnetic systems. Recent approaches to rectify this involve incorporating the first-order change in forces with atomic velocities under the assumption of adiabatic separation of electronic and nuclear degrees of freedom. In this work, we develop a first-principles method to calculate this velocity-force coupling in extended solids, and show via the example of ferromagnetic CrI$_3$ that, due to the slow dynamics of the spins in the system, the assumption of adiabatic separation can result in large errors for splittings of zone-center chiral modes. We demonstrate that an accurate description of the lattice dynamics requires treating magnons and phonons on the same footing. △ Less

Submitted 30 August, 2022; originally announced August 2022.

Ultra Localized Optoelectronic Properties of Nanobubbles in 2D Semiconductors

Authors: Sara Shabani, Thomas P. Darlington, Colin Gordon, Wenjing Wu, Emanuil Yanev, James Hone, Xiaoyang Zhu, Cyrus E. Dreyer, P. James Schuck, Abhay N. Pasupathy

Abstract: The optical properties of transition metal dichalcogenides have previously been modified at the nanoscale by using mechanical and electrical nanostructuring. However, a clear experimental picture relating the local electronic structure with emission properties in such structures has so far been lacking. Here, we use a combination of scanning tunneling microscopy (STM) and near-field photoluminesce… ▽ More The optical properties of transition metal dichalcogenides have previously been modified at the nanoscale by using mechanical and electrical nanostructuring. However, a clear experimental picture relating the local electronic structure with emission properties in such structures has so far been lacking. Here, we use a combination of scanning tunneling microscopy (STM) and near-field photoluminescence (nano-PL) to probe the electronic and optical properties of single nano-bubbles in bilayer heterostructures of WSe2 on MoSe2. We show from tunneling spectroscopy that there are electronic states deeply localized in the gap at the edge of such bubbles, which are independent of the presence of chemical defects in the layers. We also show a significant change in the local bandgap on the bubble, with a continuous evolution to the edge of the bubble over a length scale of ~20 nm. Nano-PL measurements observe a continuous redshift of the interlayer exciton on entering the bubble, in agreement with the band to band transitions measured by STM. We use self-consistent Schrödinger-Poisson (SP) simulations to capture the essence of the experimental results and find that strong doping in the bubble region is a key ingredient to achieving the observed localized states, together with mechanical strain. △ Less

Submitted 30 August, 2022; originally announced August 2022.

Electronic structure of the highly conductive perovskite oxide SrMoO$_3$

Authors: E. Cappelli, A. Hampel, A. Chikina, E. Bonini Guedes, G. Gatti, A. Hunter, J. Issing, N. Biskup, M. Varela, Cyrus E. Dreyer, A. Tamai, A. Georges, F. Y. Bruno, M. Radovic, F. Baumberger

Abstract: We use angle-resolved photoemission to map the Fermi surface and quasiparticle dispersion of bulk-like thin films of SrMoO$_3$ grown by pulsed laser deposition. The electronic self-energy deduced from our data reveals weak to moderate correlations in SrMoO$_3$, consistent with our observation of well-defined electronic states over the entire occupied band width. We further introduce spectral funct… ▽ More We use angle-resolved photoemission to map the Fermi surface and quasiparticle dispersion of bulk-like thin films of SrMoO$_3$ grown by pulsed laser deposition. The electronic self-energy deduced from our data reveals weak to moderate correlations in SrMoO$_3$, consistent with our observation of well-defined electronic states over the entire occupied band width. We further introduce spectral function calculations that combine dynamical mean-field theory with an unfolding procedure of density functional calculations and demonstrate good agreement of this approach with our experiments. △ Less

Submitted 11 March, 2022; originally announced March 2022.

The Oscura Experiment

Authors: Alexis Aguilar-Arevalo, Fabricio Alcalde Bessia, Nicolas Avalos, Daniel Baxter, Xavier Bertou, Carla Bonifazi, Ana Botti, Mariano Cababie, Gustavo Cancelo, Brenda Aurea Cervantes-Vergara, Nuria Castello-Mor, Alvaro Chavarria, Claudio R. Chavez, Fernando Chierchie, Juan Manuel De Egea, Juan Carlos D`Olivo, Cyrus E. Dreyer, Alex Drlica-Wagner, Rouven Essig, Juan Estrada, Ezequiel Estrada, Erez Etzion, Guillermo Fernandez-Moroni, Marivi Fernandez-Serra, Steve Holland , et al. (19 additional authors not shown)

Abstract: The Oscura experiment will lead the search for low-mass dark matter particles using a very large array of novel silicon Charge Coupled Devices (CCDs) with a threshold of two electrons and with a total exposure of 30 kg-yr. The R&D effort, which began in FY20, is currently entering the design phase with the goal of being ready to start construction in late 2024. Oscura will have unprecedented sensi… ▽ More The Oscura experiment will lead the search for low-mass dark matter particles using a very large array of novel silicon Charge Coupled Devices (CCDs) with a threshold of two electrons and with a total exposure of 30 kg-yr. The R&D effort, which began in FY20, is currently entering the design phase with the goal of being ready to start construction in late 2024. Oscura will have unprecedented sensitivity to sub-GeV dark matter particles that interact with electrons, probing dark matter-electron scattering for masses down to 500 keV and dark matter being absorbed by electrons for masses down to 1 eV. The Oscura R&D effort has made some significant progress on the main technical challenges of the experiment, of which the most significant are engaging new foundries for the fabrication of the CCD sensors, developing a cold readout solution, and understanding the experimental backgrounds. △ Less

Submitted 23 February, 2022; v1 submitted 21 February, 2022; originally announced February 2022.

Photocatalytic water oxidation on SrTiO$_3$ [001] surfaces

Authors: Vidushi Sharma, Benjamin Bein, Amanda Lai, Betül Pamuk, Cyrus E. Dreyer, Marivi Fernández-Serra, Matthew Dawber

Abstract: SrTiO$_3$ is a highly efficient photocatalyst for the overall water splitting reaction under UV irradiation. However, an atomic-level understanding of the active surface sites responsible for the oxidation and reduction reactions is still lacking. Here we present a unified experimental and computational account of the photocatalytic activity at the SrO- and TiO$_2$- terminations of aqueous-solvate… ▽ More SrTiO$_3$ is a highly efficient photocatalyst for the overall water splitting reaction under UV irradiation. However, an atomic-level understanding of the active surface sites responsible for the oxidation and reduction reactions is still lacking. Here we present a unified experimental and computational account of the photocatalytic activity at the SrO- and TiO$_2$- terminations of aqueous-solvated [001] SrTiO$_3$. Our experimental findings show that the overall water-splitting reaction proceeds on the SrTiO$_3$ surface only when the two terminations are simultaneously exposed to water. Our simulations explain this, showing that the photogenerated hole-driven oxidation primarily occurs at SrO surfaces in a sequence of four single hole transfer reactions, while the TiO$_2$ termination effects the crucial band alignment of the photocatalyst relative to the water oxidation potential. The present work elucidates the interdependence of the two chemical terminations of SrTiO$_3$ surfaces, and has consequent implications for maximizing sustainable solar-driven water splitting. △ Less

Submitted 31 January, 2022; originally announced January 2022.

Comments: 11 + 6 pages, 6 + 8 figures, including Supplementary Information

Report number: LA-UR-22-20654

Rotational $g$ factors and Lorentz forces of molecules and solids from density-functional perturbation theory

Authors: Asier Zabalo, Cyrus E. Dreyer, Massimiliano Stengel

Abstract: Applied magnetic fields can couple to atomic displacements via generalized Lorentz forces, which are commonly expressed as gyromagnetic $g$ factors. We develop an efficient first-principles methodology based on density-functional perturbation theory to calculate this effect in both molecules and solids to linear order in the applied field. Our methodology is based on two linear-response quantities… ▽ More Applied magnetic fields can couple to atomic displacements via generalized Lorentz forces, which are commonly expressed as gyromagnetic $g$ factors. We develop an efficient first-principles methodology based on density-functional perturbation theory to calculate this effect in both molecules and solids to linear order in the applied field. Our methodology is based on two linear-response quantities: the macroscopic polarization response to an atomic displacement (i.e., Born effective charge tensor), and the antisymmetric part of its first real-space moment (the symmetric part corresponding to the dynamical quadrupole tensor). The latter quantity is calculated via an analytical expansion of the current induced by a long-wavelength phonon perturbation, and compared to numerical derivatives of finite-wavevector calculations. We validate our methodology in finite systems by computing the gyromagnetic $g$ factor of several simple molecules, demonstrating excellent agreement with experiment and previous density-functional theory and quantum chemistry calculations. In addition, we demonstrate the utility of our method in extended systems by computing the energy splitting of the low-frequency transverse-optical phonon mode of cubic SrTiO$_3$ in the presence of a magnetic field. △ Less

Submitted 22 December, 2021; originally announced December 2021.

Quantum embedding methods for correlated excited states of point defects: Case studies and challenges

Authors: Lukas Muechler, Danis I. Badrtdinov, Alexander Hampel, Jennifer Cano, Malte Rösner, Cyrus E. Dreyer

Abstract: A quantitative description of the excited electronic states of point defects and impurities is crucial for understanding materials properties, and possible applications of defects in quantum technologies. This is a considerable challenge for computational methods, since Kohn-Sham density-functional theory (DFT) is inherently a ground state theory, while higher-level methods are often too computati… ▽ More A quantitative description of the excited electronic states of point defects and impurities is crucial for understanding materials properties, and possible applications of defects in quantum technologies. This is a considerable challenge for computational methods, since Kohn-Sham density-functional theory (DFT) is inherently a ground state theory, while higher-level methods are often too computationally expensive for defect systems. Recently, embedding approaches have been applied that treat defect states with many-body methods, while using DFT to describe the bulk host material. We implement such an embedding method, based on Wannierization of defect orbitals and the constrained random-phase approximation approach, and perform systematic characterization of the method for three distinct systems with current technological relevance: a carbon dimer replacing a B and N pair in bulk hexagonal BN (C$_{\text{B}}$C$_{\text{N}}$), the negatively charged nitrogen-vacancy center in diamond (NV$^-$), and an Fe impurity on the Al site in wurtzite AlN ($\text{Fe}_{\text{Al}}$). For C$_{\text{B}}$C$_{\text{N}}$ we show that the embedding approach gives many-body states in agreement with analytical results on the Hubbard dimer model, which allows us to elucidate the effects of the DFT functional and double-counting correction. For the NV$^-$ center, our method demonstrates good quantitative agreement with experiments for the zero-phonon line of the triplet-triplet transition. Finally, we illustrate challenges associated with this method for determining the energies and orderings of the complex spin multiplets in $\text{Fe}_{\text{Al}}$. △ Less

Submitted 8 March, 2022; v1 submitted 18 May, 2021; originally announced May 2021.

Comments: 19 pages, 14 figures. Supplemental material: 7 pages

Interplay between breathing-mode distortions and magnetic order in rare-earth nickelates from $ab$ $initio$ magnetic models

Authors: Danis I. Badrtdinov, Alexander Hampel, Cyrus E. Dreyer

Abstract: We use density-functional theory calculations to explore the magnetic properties of perovskite rare-earth nickelates, $\mathcal{R}$NiO$_3$, by constructing microscopic magnetic models containing all relevant exchange interactions via Wannierization and Green's function techniques. These models elucidate the mechanism behind the formation of antiferromagnetic order with the experimentally observed… ▽ More We use density-functional theory calculations to explore the magnetic properties of perovskite rare-earth nickelates, $\mathcal{R}$NiO$_3$, by constructing microscopic magnetic models containing all relevant exchange interactions via Wannierization and Green's function techniques. These models elucidate the mechanism behind the formation of antiferromagnetic order with the experimentally observed propagation vector, and explain the reason previous DFT plus Hubbard $U$ calculations favored ferromagnetic order. We perform calculations of magnetic moments and exchange-coupling parameters for different amplitudes of the $R_1^+$ breathing mode distortion, which results in expanded and compressed NiO$_6$ octahedra. We find that the magnetic moment vanishes for the "short bond" nickels, i.e., the ones in the compressed octahedra. The inclusion of spin-orbit coupling demonstrates that the magnetic anisotropy is very small, while the magnetic moment of the short bond nickel atoms tend to zero even for the noncollinear case. Our results provide a clear picture of the trends of the magnetic order across the nickelate series and give insights into the coupling between magnetic order and structural distortions. △ Less

Submitted 15 March, 2021; originally announced March 2021.

Comments: 10 pages, 10 figures

Journal ref: Phys. Rev. B 104, 054403 (2021)

Nonadiabatic Born effective charges in metals and the Drude weight

Authors: Cyrus E. Dreyer, Sinisa Coh, Massimiliano Stengel

Abstract: In insulators, Born effective charges describe the electrical polarization induced by the displacement of individual atomic sublattices. Such a physical property is at first sight irrelevant for metals and doped semiconductors, where the macroscopic polarization is ill-defined. Here we show that, in clean conductors, going beyond the adiabatic approximation results in nonadiabatic Born effective c… ▽ More In insulators, Born effective charges describe the electrical polarization induced by the displacement of individual atomic sublattices. Such a physical property is at first sight irrelevant for metals and doped semiconductors, where the macroscopic polarization is ill-defined. Here we show that, in clean conductors, going beyond the adiabatic approximation results in nonadiabatic Born effective charges that are well defined in the low-frequency limit. In addition, we find that the sublattice sum of the nonadiabatic Born effective charges does not vanish as it does in the insulating case, but instead is proportional to the Drude weight. We demonstrate these formal results with density functional perturbation theory calculations of Al, and electron-doped SnS$_2$ and SrTiO$_3$. △ Less

Submitted 7 March, 2022; v1 submitted 7 March, 2021; originally announced March 2021.

Comments: 6 pages, 3 figures. Supplemental material: 10 pages, 11 figures

Journal ref: Phys. Rev. Lett. 128, 095901 (2022)

Correlation-Induced Octahedral Rotations in SrMoO$_3$

Authors: Alexander Hampel, Jeremy Lee-Hand, Antoine Georges, Cyrus E. Dreyer

Abstract: Distortions of the oxygen octahedra influence the fundamental electronic structure of perovskite oxides, such as their bandwidth and exchange interactions. Utilizing a fully ab-initio methodology based on density functional theory plus dynamical mean field theory (DFT+DMFT), we study the crystal and magnetic structure of SrMoO$_3$. Comparing our results with DFT+$U$ performed on the same footing,… ▽ More Distortions of the oxygen octahedra influence the fundamental electronic structure of perovskite oxides, such as their bandwidth and exchange interactions. Utilizing a fully ab-initio methodology based on density functional theory plus dynamical mean field theory (DFT+DMFT), we study the crystal and magnetic structure of SrMoO$_3$. Comparing our results with DFT+$U$ performed on the same footing, we find that DFT+$U$ overestimates the propensity for magnetic ordering, as well as the octahedral rotations, leading to a different ground state structure. This demonstrates that structural distortions can be highly sensitive to electronic correlation effects, and to the considered magnetic state, even in a moderately correlated metal such as SrMoO$_3$. Moreover, by comparing different downfolding schemes, we demonstrate the robustness of the DFT+DMFT method for obtaining structural properties, highlighting its versatility for applications to a broad range of materials. △ Less

Submitted 1 July, 2021; v1 submitted 14 December, 2020; originally announced December 2020.

Comments: 11 pages, 10 figures

Journal ref: Phys. Rev. B 104, 035102 (2021)

First-principles study of the electronic, magnetic, and crystal structure of perovskite molybdates

Authors: Jeremy Lee-Hand, Alexander Hampel, Cyrus E. Dreyer

Abstract: The molybdate oxides SrMoO$_3$, PbMoO$_3$, and LaMoO$_3$ are a class of metallic perovskites that exhibit interesting properties including high mobility, and unusual resistivity behavior. We use first-principles methods based on density functional theory to explore the electronic, crystal, and magnetic structure of these materials. In order to account for the electron correlations in the partially… ▽ More The molybdate oxides SrMoO$_3$, PbMoO$_3$, and LaMoO$_3$ are a class of metallic perovskites that exhibit interesting properties including high mobility, and unusual resistivity behavior. We use first-principles methods based on density functional theory to explore the electronic, crystal, and magnetic structure of these materials. In order to account for the electron correlations in the partially-filled Mo $4d$ shell, a local Hubbard $U$ interaction is included. The value of $U$ is estimated via the constrained random-phase approximation approach, and the dependence of the results on the choice of $U$ are explored. For all materials, GGA+$U$ predicts a metal with an orthorhombic, antiferromagnetic structure. For LaMoO$_3$, the $Pnma$ space group is the most stable, while for SrMoO$_3$ and PbMoO$_3$, the $Imma$ and $Pnma$ structures are close in energy. The $R_4^+$ octahedral rotations for SrMoO$_3$ and PbMoO$_3$ are found to be overestimated compared to the experimental low-temperature structure. △ Less

Submitted 18 August, 2021; v1 submitted 16 November, 2020; originally announced November 2020.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. Materials 5, 085001 (2021)

Nonrad: Computing Nonradiative Capture Coefficients from First Principles

Authors: Mark E. Turiansky, Audrius Alkauskas, Manuel Engel, Georg Kresse, Darshana Wickramaratne, Jimmy-Xuan Shen, Cyrus E. Dreyer, Chris G. Van de Walle

Abstract: Point defects in semiconductor crystals provide a means for carriers to recombine nonradiatively. This recombination process impacts the performance of devices. We present the Nonrad code that implements the first-principles approach of Alkauskas et al. [Phys. Rev. B 90, 075202 (2014)] for the evaluation of nonradiative capture coefficients based on a quantum-mechanical description of the capture… ▽ More Point defects in semiconductor crystals provide a means for carriers to recombine nonradiatively. This recombination process impacts the performance of devices. We present the Nonrad code that implements the first-principles approach of Alkauskas et al. [Phys. Rev. B 90, 075202 (2014)] for the evaluation of nonradiative capture coefficients based on a quantum-mechanical description of the capture process. An approach for evaluating electron-phonon coupling within the projector augmented wave formalism is presented. We also show that the common procedure of replacing Dirac delta functions with Gaussians can introduce errors into the resulting capture rate, and implement an alternative scheme to properly account for vibrational broadening. Lastly, we assess the accuracy of using an analytic approximation to the Sommerfeld parameter by comparing with direct numerical evaluation. △ Less

Submitted 22 November, 2020; v1 submitted 14 November, 2020; originally announced November 2020.

Radiative capture rates at deep defects from electronic structure calculations

Authors: Cyrus E. Dreyer, Audrius Alkauskas, John L. Lyons, Chris G. Van de Walle

Abstract: We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect st… ▽ More We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect states. We also discuss the validity of the Condon approximation, showing that even in the event of large lattice relaxations the approximation is accurate. We test the method on GaAs:$V_\text{Ga}$-$\text{Te}_\text{As}$ and GaN:C$_\text{N}$, for which reliable experiments are available, and demonstrate very good agreement with measured capture coefficients. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Comments: 6 pages, 2 figures

Long-range quadrupole electron-phonon interaction from first principles

Authors: Jinsoo Park, Jin-Jian Zhou, Vatsal A. Jhalani, Cyrus E. Dreyer, Marco Bernardi

Abstract: Lattice vibrations in materials induce perturbations on the electron dynamics in the form of long-range (dipole and quadrupole) and short-range (octopole and higher) potentials. The dipole Fröhlich term can be included in current first-principles electron-phonon ($e$-ph) calculations and is present only in polar materials. The quadrupole $e$-ph interaction is present in both polar and nonpolar mat… ▽ More Lattice vibrations in materials induce perturbations on the electron dynamics in the form of long-range (dipole and quadrupole) and short-range (octopole and higher) potentials. The dipole Fröhlich term can be included in current first-principles electron-phonon ($e$-ph) calculations and is present only in polar materials. The quadrupole $e$-ph interaction is present in both polar and nonpolar materials, but currently it cannot be computed from first principles. Here we show an approach to compute the quadrupole $e$-ph interaction and include it in ab initio calculations of $e$-ph matrix elements. The accuracy of the approach is demonstrated by comparing with direct density functional perturbation theory calculations. We apply our method to silicon as a case of a nonpolar semiconductor and tetragonal PbTiO$_3$ as a case of a polar piezoelectric material. In both materials we find that the quadrupole term strongly impacts the $e$-ph matrix elements. Analysis of $e$-ph interactions for different phonon modes reveals that the quadrupole term mainly affects optical modes in silicon and acoustic modes in PbTiO$_3$, although the quadrupole term is needed for all modes to achieve quantitative accuracy. The effect of the quadrupole $e$-ph interaction on electron scattering processes and transport is shown to be important. Our approach enables accurate studies of $e$-ph interactions in broad classes of nonpolar, polar and piezoelectric materials. △ Less

Submitted 30 March, 2020; originally announced March 2020.

Comments: 9 pages, 5 figures, submitted

Journal ref: Phys. Rev. B 102, 125203 (2020)

Piezoelectric Electron-Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN

Authors: Vatsal A. Jhalani, Jin-Jian Zhou, Jinsoo Park, Cyrus E. Dreyer, Marco Bernardi

Abstract: First-principles calculations of $e$-ph interactions are becoming a pillar of electronic structure theory. However, the current approach is incomplete. The piezoelectric (PE) $e$-ph interaction, a long-range scattering mechanism due to acoustic phonons in non-centrosymmetric polar materials, is not accurately described at present. Current calculations include short-range $e$-ph interactions (obtai… ▽ More First-principles calculations of $e$-ph interactions are becoming a pillar of electronic structure theory. However, the current approach is incomplete. The piezoelectric (PE) $e$-ph interaction, a long-range scattering mechanism due to acoustic phonons in non-centrosymmetric polar materials, is not accurately described at present. Current calculations include short-range $e$-ph interactions (obtained by interpolation) and the dipole-like Fröhlich long-range coupling in polar materials, but lack important quadrupole effects for acoustic modes and PE materials. Here we derive and compute the long-range $e$-ph interaction due to dynamical quadrupoles, and apply this framework to investigate $e$-ph interactions and the carrier mobility in the PE material wurtzite GaN. We show that the quadrupole contribution is essential to obtain accurate $e$-ph matrix elements for acoustic modes and to compute PE scattering. Our work resolves the outstanding problem of correctly computing $e$-ph interactions for acoustic modes from first principles, and enables studies of $e$-ph coupling and charge transport in PE materials. △ Less

Submitted 19 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Lett. 125, 136602 (2020)

Controlled introduction of defects to delafossite metals by electron irradiation

Authors: V. Sunko, P. H. McGuinness, C. S. Chang, E. Zhakina, S. Khim, C. E. Dreyer, M. Konczykowski, M. König, D. A. Muller, A. P. Mackenzie

Abstract: The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence o… ▽ More The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence of highly unusual levels of crystalline perfection. We report the results of experiments in which high energy electron irradiation was used to introduce point disorder to the Pd and Pt layers in which the conduction occurs. We obtain the cross-section for formation of Frenkel pairs in absolute units, and cross-check our analysis with first principles calculations of the relevant atomic displacement energies. We observe an increase of resistivity that is linear in defect density with a slope consistent with scattering in the unitary limit. Our results enable us to deduce that the as-grown crystals contain extremely low levels of in-plane defects of approximately $0.001\%$. This confirms that crystalline perfection is the most important factor in realizing the long mean free paths, and highlights how unusual these delafossite metals are in comparison with the vast majority of other multi-component oxides and alloys. We discuss the implications of our findings for future materials research. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. X 10, 021018 (2020)

Seeing moiré superlattices

Authors: L. J. McGilly, A. Kerelsky, N. R. Finney, K. Shapovalov, E. -M. Shih, A. Ghiotto, Y. Zeng, S. L. Moore, W. Wu, Y. Bai, K. Watanabe, T. Taniguchi, M. Stengel, L. Zhou, J. Hone, X. -Y. Zhu, D. N. Basov, C. Dean, C. E. Dreyer, A. N. Pasupathy

Abstract: Moiré superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moiré superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moiré superlattices w… ▽ More Moiré superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moiré superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moiré superlattices with sub-5 nm spatial resolution in a variety of twisted vdW heterostructures including but not limited to conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method utilizes piezoresponse force microscopy, an atomic force microscope modality which locally measures electromechanical surface deformation. We find that all moiré superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moiré superlattices. Moiré superlattices of 2D materials thus represent an interlinked network of polarized domain walls in a non-polar background matrix. △ Less

Submitted 16 December, 2019; v1 submitted 13 December, 2019; originally announced December 2019.

Comments: 21 pages, 4 figures; updated text

Giant polarization charge density at lattice-matched GaN/ScN interfaces

Authors: Nicholas L. Adamski, Cyrus E. Dreyer, Chris G. Van de Walle

Abstract: Rocksalt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exihibts a large polarization discontinuity of $-$1.358 $\rm Cm^{-2}$. Interfaces between ScN and wurtzite III-nitrides will exhib… ▽ More Rocksalt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exihibts a large polarization discontinuity of $-$1.358 $\rm Cm^{-2}$. Interfaces between ScN and wurtzite III-nitrides will exhibit a high-density electron gas on the (000$\bar{1}$) GaN interface or a hole gas on the (0001) GaN interface, with carrier concentrations up to $8.5 \times 10^{14}$ cm$^{-2}$. The large polarization difference and small strain makes ScN a desirable choice for polarization-enhanced tunnel junctions within the III-nitride materials system. The large sheet carrier densities may also be useful for contacts or current spreading layers. △ Less

Submitted 19 December, 2019; v1 submitted 30 September, 2019; originally announced October 2019.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters {\bf 115}, 232103 (2019) and may be found at https://aip.scitation.org/doi/10.1063/1.5126717

Journal ref: Appl. Phys. Lett. 115, 232103 (2019)

Metric-wave approach to flexoelectricity within density-functional perturbation theory

Authors: Andrea Schiaffino, Cyrus E. Dreyer, David Vanderbilt, Massimiliano Stengel

Abstract: Within the framework of density functional perturbation theory (DFPT), we implement and test a novel "metric wave" response-function approach. It consists in the reformulation of an acoustic phonon perturbation in the curvilinear frame that is comoving with the atoms. This means that all the perturbation effects are encoded in the first-order variation of the real-space metric, while the atomic po… ▽ More Within the framework of density functional perturbation theory (DFPT), we implement and test a novel "metric wave" response-function approach. It consists in the reformulation of an acoustic phonon perturbation in the curvilinear frame that is comoving with the atoms. This means that all the perturbation effects are encoded in the first-order variation of the real-space metric, while the atomic positions remain fixed. This approach can be regarded as the generalization of the uniform strain perturbation of Hamann et al. [D. R. Hamann, X. Wu, K. M. Rabe, and D. Vanderbilt, Phys. Rev. B 71, 035117 (2005)] to the case of inhomogeneous deformations, and greatly facilitates the calculation of advanced electromechanical couplings such as the flexoelectric tensor. We demonstrate the accuracy of our approach with extensive tests on model systems and on bulk crystals of Si and SrTiO$_3$. △ Less

Submitted 30 November, 2018; originally announced November 2018.

Comments: 15 pages, 5 figures, 4 tables, 1 appendix

Journal ref: Phys. Rev. B 99, 085107 (2019)

Defect identification based on first-principles calculations for deep level transient spectroscopy

Authors: Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris G. Van de Walle

Abstract: Deep level transient spectroscopy (DLTS) is used extensively to study defects in semiconductors. We demonstrate that great care should be exercised in interpreting activation energies extracted from DLTS as ionization energies. We show how first-principles calculations of thermodynamic transition levels, temperature effects of ionization energies, and nonradiative capture coefficients can be used… ▽ More Deep level transient spectroscopy (DLTS) is used extensively to study defects in semiconductors. We demonstrate that great care should be exercised in interpreting activation energies extracted from DLTS as ionization energies. We show how first-principles calculations of thermodynamic transition levels, temperature effects of ionization energies, and nonradiative capture coefficients can be used to accurately determine actual activation energies that can be directly compared with DLTS. Our analysis is illustrated with hybrid functional calculations for two important defects in GaN that have similar thermodynamic transition levels, and shows that the activation energy extracted from DLTS includes a capture barrier that is temperature dependent, unique to each defect, and in some cases large in comparison to the ionization energy. By calculating quantities that can be directly compared with experiment, first-principles calculations thus offer powerful leverage in identifying the microscopic origin of defects detected in DLTS. △ Less

Submitted 11 October, 2018; originally announced October 2018.

Comments: Main text and Supplementary Material

Current-density implementation for calculating flexoelectric coefficients

Authors: Cyrus E. Dreyer, Massimiliano Stengel, David Vanderbilt

Abstract: The flexoelectric effect refers to polarization induced in an insulator when a strain gradient is applied. We have developed a first-principles methodology based on density-functional perturbation theory to calculate the elements of the bulk, clamped-ion flexoelectric tensor. In order to determine the transverse and shear components directly from a unit cell calculation, we calculate the current d… ▽ More The flexoelectric effect refers to polarization induced in an insulator when a strain gradient is applied. We have developed a first-principles methodology based on density-functional perturbation theory to calculate the elements of the bulk, clamped-ion flexoelectric tensor. In order to determine the transverse and shear components directly from a unit cell calculation, we calculate the current density induced by the adiabatic atomic displacements of a long-wavelength acoustic phonon. Previous implementations based on the charge-density response required supercells to capture these components. Our density-functional-theory implementation requires the development of an expression for the current density that is valid for the case of nonlocal pseudopotentials, and long-wavelength phonon perturbations. We benchmark our methodology on simple systems of isolated noble gas atoms, and apply it to calculate the clamped-ion flexoelectric constants for a variety of technologically important cubic oxides. We also discuss some technical issues that are associated with the definition of current density in a nonlocal pseudopotential context, and their relevance to the calculation of macroscopic response properties of crystals. △ Less

Submitted 6 September, 2018; v1 submitted 18 February, 2018; originally announced February 2018.

Comments: 23 pages, 3 figures

Journal ref: Phys. Rev. B 98, 075153 (2018)

Phonon-assisted optical absorption in BaSnO$_3$ from first principles

Authors: Bartomeu Monserrat, Cyrus E. Dreyer, Karin M. Rabe

Abstract: The perovskite BaSnO$_3$ provides a promising platform for the realization of an earth abundant $n$-type transparent conductor. Its optical properties are dominated by a dispersive conduction band of Sn $5s$ states, and by a flatter valence band of O $2p$ states, with an overall indirect gap of about $2.9$ eV. Using first-principles methods, we study the optical properties of BaSnO$_3$ and show th… ▽ More The perovskite BaSnO$_3$ provides a promising platform for the realization of an earth abundant $n$-type transparent conductor. Its optical properties are dominated by a dispersive conduction band of Sn $5s$ states, and by a flatter valence band of O $2p$ states, with an overall indirect gap of about $2.9$ eV. Using first-principles methods, we study the optical properties of BaSnO$_3$ and show that both electron-phonon interactions and exact exchange, included using a hybrid functional, are necessary to obtain a qualitatively correct description of optical absorption in this material. In particular, the electron-phonon interaction drives phonon-assisted optical absorption across the minimum indirect gap and therefore determines the absorption onset, and it also leads to the temperature dependence of the absorption spectrum. Electronic correlations beyond semilocal density functional theory are key to detemine the dynamical stability of the cubic perovskite structure, as well as the correct energies of the conduction bands that dominate absorption. Our work demonstrates that phonon-mediated absorption processes should be included in the design of novel transparent conductor materials. △ Less

Submitted 26 September, 2017; originally announced September 2017.

Comments: 9 pages, 5 figures; includes supplemental material

Journal ref: Phys. Rev. B 97, 104310 (2018)

Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides

Authors: Cyrus E. Dreyer, Anderson Janotti, Chris G. Van de Walle, David Vanderbilt

Abstract: Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal p… ▽ More Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal polarization, this method results in a spurious contribution to the spontaneous polarization differences between materials. In addition, we address the correct choice of "improper" versus "proper" piezoelectric constants. For the technologically important III-nitride materials GaN, AlN, and InN, we determine polarization discontinuities using a consistent reference based on the layered hexagonal structure and the correct choice of piezoelectric constants, and discuss the results in light of available experimental data. △ Less

Submitted 24 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. X 6, 021038 (2016)

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Authors: Audrius Alkauskas, Cyrus E. Dreyer, John L. Lyons, Chris G. Van de Walle

Abstract: Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of the transition, the mechanisms by which such recombination can take place in wide-band-gap materials are unclear. Using electronic structure calculations we uncover the crucial role of electronic excited states in nonradia… ▽ More Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of the transition, the mechanisms by which such recombination can take place in wide-band-gap materials are unclear. Using electronic structure calculations we uncover the crucial role of electronic excited states in nonradiative recombination processes. The impact is elucidated with examples for the group-III nitrides, for which accumulating experimental evidence indicates that defect-assisted recombination limits efficiency. Our work provides new insights into the physics of nonradiative recombination, and the mechanisms are suggested to be ubiquitous in wide-band-gap semiconductors. △ Less

Submitted 18 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 93, 201304 (2016)