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Direct Measurement of Microwave Loss in Nb Films for Superconducting Qubits
Authors:
B. Abdisatarov,
D. Bafia,
A. Murthy,
G. Eremeev,
H. E. Elsayed-Ali,
J. Lee,
A. Netepenko,
C. P. A. Carlos,
S. Leith,
G. J. Rosaz,
A. Romanenko,
A. Grassellino
Abstract:
Niobium films are a key component in modern two-dimensional superconducting qubits, yet their contribution to the total qubit decay rate is not fully understood. The presence of different layers of materials and interfaces makes it difficult to identify the dominant loss channels in present two-dimensional qubit designs. In this paper we present the first study which directly correlates measuremen…
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Niobium films are a key component in modern two-dimensional superconducting qubits, yet their contribution to the total qubit decay rate is not fully understood. The presence of different layers of materials and interfaces makes it difficult to identify the dominant loss channels in present two-dimensional qubit designs. In this paper we present the first study which directly correlates measurements of RF losses in such films to material parameters by investigating a high-power impulse magnetron sputtered (HiPIMS) film atop a three-dimensional niobium superconducting radiofrequency (SRF) resonator. By using a 3D SRF structure, we are able to isolate the niobium film loss from other contributions. Our findings indicate that microwave dissipation in the HiPIMS-prepared niobium films, within the quantum regime, resembles that of record-high intrinsic quality factor of bulk niobium SRF cavities, with lifetimes extending into seconds. Microstructure and impurity level of the niobium film do not significantly affect the losses. These results set the scale of microwave losses in niobium films and show that niobium losses do not dominate the observed coherence times in present two-dimensional superconducting qubit designs, instead highlighting the dominant role of the dielectric oxide in limiting the performance. We can also set a bound for when niobium film losses will become a limitation for qubit lifetimes.
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Submitted 11 July, 2024;
originally announced July 2024.
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First Results from Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System
Authors:
M. S. Shakel,
H. E. Elsayed-Ali,
G. Eremeev,
U. Pudasaini,
A. M. Valente-Feliciano
Abstract:
A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn ph…
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A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb3Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 $μ$m thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 x 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 x 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 - 18 K. Here we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.
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Submitted 17 July, 2023;
originally announced July 2023.
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Medium-Grain Niobium SRF Cavity Production Technology for Science Frontiers and Accelerator Applications
Authors:
G. Myneni,
Hani E. Elsayed-Ali,
Md Obidul Islam,
Md Nizam Sayeed,
G. Ciovati,
P. Dhakal,
R. A. Rimmer,
M. Carl,
A. Fajardo,
N. Lannoy,
B. Khanal,
T. Dohmae,
A. Kumar,
T. Saeki,
K. Umemori,
M. Yamanaka,
S. Michizono,
A. Yamamoto
Abstract:
We propose cost-effective production of medium grain (MG) niobium (Nb) discs directly sliced from forged and annealed billet. This production method provides clean surface conditions and reliable mechanical characteristics with sub-millimeter average grain size resulting in stable SRF cavity production. We propose to apply this material to particle accelerator applications in the science and indus…
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We propose cost-effective production of medium grain (MG) niobium (Nb) discs directly sliced from forged and annealed billet. This production method provides clean surface conditions and reliable mechanical characteristics with sub-millimeter average grain size resulting in stable SRF cavity production. We propose to apply this material to particle accelerator applications in the science and industrial frontiers. The science applications require high field gradients (>~40 MV/m) particularly in pulse mode. The industrial applications require high Q0 values with moderate gradients (~30 MV/m) in CW mode operation. This report describes the MG Nb disc production recently demonstrated and discusses future prospects for application in advanced particle accelerators in the science and industrial frontiers.
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Submitted 11 March, 2022;
originally announced March 2022.
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Effect of substrate temperature on the growth of Nb3Sn film on Nb by multilayer sputtering
Authors:
Md Nizam Sayeed,
Uttar Pudasaini,
Charles E. Reece,
Grigory V. Eremeev,
Hani E. Elsayed-Ali
Abstract:
Nb3Sn films were fabricated by multilayer sequential sputtering on Nb at substrate temperatures ranging from room temperature to 250 °C. The multilayers were then annealed inside a separate vacuum furnace at 950 °C for 3h. The films material properties were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and transmiss…
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Nb3Sn films were fabricated by multilayer sequential sputtering on Nb at substrate temperatures ranging from room temperature to 250 °C. The multilayers were then annealed inside a separate vacuum furnace at 950 °C for 3h. The films material properties were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and transmission electron microscopy. The films superconducting properties were studied by four-point probe resistivity measurements from room temperature to below the superconducting critical temperature Tc. The highest film Tc was 17.76 K, obtained when the multilayers were deposited at room temperature. A superconducting Nb3Sn thin film with a smoother surface morphology but a lower Tc of 17.58 K was obtained on the film deposited at a substrate temperature of 250 °C.
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Submitted 19 April, 2022; v1 submitted 15 September, 2021;
originally announced September 2021.
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Boron and Barium Incorporation at the 4H-SiC/SiO2 Interface using a Laser Multi-Charged Ion Source
Authors:
Md Haider Shaim,
Hani E. Elsayed-Ali
Abstract:
A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength λ = 1064 nm, pulse width τ = 7 ns, and fluence F = 135 J/cm2) was used to ablate B and Ba targets to generate multicharged ions. The ions were deflected by an electrostatic field to separate them from the neutrals. The multicharged ions…
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A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength λ = 1064 nm, pulse width τ = 7 ns, and fluence F = 135 J/cm2) was used to ablate B and Ba targets to generate multicharged ions. The ions were deflected by an electrostatic field to separate them from the neutrals. The multicharged ions were used for nanometer layer growth and shallow ion implantation in 4H-SiC. Several metal-oxide-semiconductor capacitors (MOSCAP) were fabricated with a combination of B and Ba at the SiC/SiO2 interface. High-low C-V measurements were used to characterize the MOSCAPs. The B interfacial layer reduced the MOSCAP flatband voltage from 4.5 to 0.04 V, while the Ba layer had a negligible effect.
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Submitted 23 January, 2021;
originally announced January 2021.
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Properties of Nb3Sn films fabricated by magnetron sputtering from a single target
Authors:
Md. Nizam Sayeed,
Uttar Pudasaini,
Charles E. Reece,
Grigory V. Eremeev,
Hani E. Elsayed-Ali
Abstract:
Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nb substrates by magnetron sputtering from a single stoichiometric Nb3Sn target. The structural, morphological and superconducting properties of the films annealed for 24 h at temperatures of 800-1000 °C were investigated. The effect of the annealing time at 1000 °C was examined for 1, 12, and 24 h. The film properties were cha…
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Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nb substrates by magnetron sputtering from a single stoichiometric Nb3Sn target. The structural, morphological and superconducting properties of the films annealed for 24 h at temperatures of 800-1000 °C were investigated. The effect of the annealing time at 1000 °C was examined for 1, 12, and 24 h. The film properties were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The DC superconducting properties of the films were characterized by a four-point probe measurement down to cryogenic temperatures. The RF surface resistance of films was measured over a temperature range of 6-23 K using a 7.4 GHz sapphire-loaded Nb cavity. As-deposited Nb3Sn films on sapphire had a superconducting critical temperature of 17.21 K, which improved to 17.83 K when the film was annealed at 800 °C for 24 h. For the films annealed at 1000 °C, the surface Sn content was reduced to ~11.3 % for an annealing time of 12 h and to ~4.1 % for an annealing time of 24 h. The Raman spectra of the films confirmed the microstructural evolution after annealing. The RF superconducting critical temperature of the as-deposited Nb3Sn films on Nb was 16.02 K, which increased to 17.44 K when the film was annealed at 800 °C for 24 h.
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Submitted 14 July, 2020;
originally announced July 2020.
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Effect of layer thickness on structural, morphological and superconducting properties of Nb$_3$Sn films fabricated by multilayer sequential sputtering
Authors:
Md Nizam Sayeed,
Uttar Pudasaini,
Charles E Reece,
Grigory V Eremeev,
Hani E Elsayed-Ali
Abstract:
Superconducting Nb3Sn films can be synthesized by controlling the atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films, where the Sn composition of the deposited films can be controlled by the thickness of alternating Nb and Sn layers. We report on the structural, morphological…
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Superconducting Nb3Sn films can be synthesized by controlling the atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films, where the Sn composition of the deposited films can be controlled by the thickness of alternating Nb and Sn layers. We report on the structural, morphological and superconducting properties of Nb3Sn films fabricated by multilayer sequential sputtering of Nb and Sn films on sapphire substrates followed by annealing at 950 °C for 3 h. We have investigated the effect of Nb and Sn layer thickness and Nb:Sn ratio on the properties of the Nb3Sn films. The crystal structure, surface morphology, surface topography, and film composition were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectroscopy (EDS). The results showed Sn loss from the surface due to evaporation during annealing. Superconducting Nb3Sn films of critical temperature up to 17.93 K were fabricated.
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Submitted 22 April, 2020;
originally announced April 2020.
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Ultrafast lattice deformations studied by means of time-resolved electron and x-ray diffraction
Authors:
Runze Li,
Kyle Sundqvist,
Jie Chen,
H. E. Elsayed-Ali,
Peter M. Rentzepis
Abstract:
Ultrafast lattice deformation of tens to hundreds of nanometer thick metallic crystals, after femtosecond laser excitation, was measured directly using 8.04 keV subpicosecond x-ray and 59 keV femtosecond electron pulses. Coherent phonons were generated in both single crystal and polycrystalline films. Lattice compression was observed within the first few picoseconds after laser irradiation in sing…
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Ultrafast lattice deformation of tens to hundreds of nanometer thick metallic crystals, after femtosecond laser excitation, was measured directly using 8.04 keV subpicosecond x-ray and 59 keV femtosecond electron pulses. Coherent phonons were generated in both single crystal and polycrystalline films. Lattice compression was observed within the first few picoseconds after laser irradiation in single crystal aluminum, which was attributed to the generation of a blast force and the propagation of elastic waves. The different time scale of lattice heating for tens and hundreds nanometer thick films are clearly distinguished by electron and x-ray pulse diffraction. The electron and lattice heating due to ultrafast deposition of photon energy was numerically simulated using the two-temperature model (TTM) and the results agreed with experimental observations. The ultrafast heating described by TTM was also discussed from an electrical circuit perspective, which may provide new insights on the possible connection between thermal and electrical processes. This study demonstrates that the combination of two complimentary ultrafast time-resolved methods, ultrafast x-ray and electron diffraction will provide a panoramic picture of the transient atomic motions and structure in crystals.
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Submitted 7 March, 2018;
originally announced March 2018.
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Femtosecond laser induced structural dynamics and melting of Cu (111) single crystal. An ultrafast time-resolved x-ray diffraction study
Authors:
Runze Li,
Omar A. Ashour,
Jie Chen,
H. E. Elsayed-Ali,
Peter M. Rentzepis
Abstract:
Femtosecond, 8.04 KeV x-ray pulses are used to probe the lattice dynamics of 150 nm Cu (111) single crystal on mica substrate irradiated with 400 nm, 100 fs laser pulses. For pump fluencies below the damage and melting threshold, we observed lattice contraction due to the formation of a blast force, and coherent acoustic phonons with a period of ~69 ps. At larger pump fluence, solid to liquid phas…
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Femtosecond, 8.04 KeV x-ray pulses are used to probe the lattice dynamics of 150 nm Cu (111) single crystal on mica substrate irradiated with 400 nm, 100 fs laser pulses. For pump fluencies below the damage and melting threshold, we observed lattice contraction due to the formation of a blast force, and coherent acoustic phonons with a period of ~69 ps. At larger pump fluence, solid to liquid phase transition, annealing, and recrystallization were measured in real time by monitoring the intensity evolution of the probing fs x-ray rocking curves and agreed with theoretical simulation results. The experimental data suggest the melting process is a purely thermal phase transition. This study provides, in real time, an ultrafast time-resolved detailed description of the significant processes that occurs as a result of a femtosecond light-pulse interacts with the Cu (111) crystal surface.
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Submitted 3 December, 2016;
originally announced December 2016.
