Showing 1–7 of 7 results for author: Kitadai, H

Observation of three-state nematicity and domain evolution in atomically-thin antiferromagnetic NiPS3

Authors: Qishuo Tan, Connor A. Occhialini, Hongze Gao, Jiaruo Li, Hikari Kitadai, Riccardo Comin, Xi Ling

Abstract: Nickel phosphorus trisulfide (NiPS3), a van der Waals (vdW) 2D antiferromagnet, has captivated enormous attention for its intriguing physics in recent years. However, despite its fundamental importance in physics of magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to atomically thin is still lacking. Here, we report the layer-dependent m… ▽ More Nickel phosphorus trisulfide (NiPS3), a van der Waals (vdW) 2D antiferromagnet, has captivated enormous attention for its intriguing physics in recent years. However, despite its fundamental importance in physics of magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to atomically thin is still lacking. Here, we report the layer-dependent magnetic characteristics and magnetic domains within antiferromagnetic NiPS3 by employing linear dichroism (LD) combined with polarized microscopy, spin-correlated photoluminescence (PL), and Raman spectroscopy. Our results reveal the existence of the paramagnetic-to-antiferromagnetic phase transition in bulk to bilayer NiPS3 with stronger spin fluctuation in thinner NiPS3. Furthermore, our study identifies three distinct antiferromagnetic domains within atomicallythin NiPS3 and captures the thermally-activated domain evolution. Our findings provide crucial insights for the development of antiferromagnetic spintronics and related technologies. △ Less

Submitted 27 February, 2024; v1 submitted 20 November, 2023; originally announced November 2023.

Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer

Authors: Peter F. Satterthwaite, Weikun Zhu, Patricia Jastrzebska-Perfect, Melbourne Tang, Hongze Gao, Hikari Kitadai, Ang-Yu Lu, Qishuo Tan, Shin-Yi Tang, Yu-Lun Chueh, Chia-Nung Kuo, Chin Shan Lue, Jing Kong, Xi Ling, Farnaz Niroui

Abstract: Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limita… ▽ More Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated. △ Less

Submitted 12 February, 2023; originally announced February 2023.

Spin-state Directed Synthesis of >20 micrometers 2D Layered Transition Metal Hydroxides via Edge-on Condensation

Authors: Lu Ping, Gillian E. Minarik, Hongze Gao, Jun Cao, Tianshu Li, Hikari Kitadai, Xi Ling

Abstract: Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two dimensional (2D) LTMHs remain largely unstudied in terms of their physical properties and the applications in electronic devices. Here,… ▽ More Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two dimensional (2D) LTMHs remain largely unstudied in terms of their physical properties and the applications in electronic devices. Here, directed by the relationship of the spin state of 3d transition metal (TM) ions such as Ni, Co, Cu, and the corresponding geometry of the crystal field, we discover that Ni2+ with perfect Oh symmetry is ideal for intraplanar growth, leading to the achievement of >20 μm α-Ni(OH)2 2D crystals with high yield, which are the largest 2D domains reported so far. We also report the successful synthesis of 2D Co(OH)2 crystals (>40 μm) with less yield due to the slight geometry distortion resulted from uneven number of electrons. Moreover, the detailed structural characterization of synthesized α-Ni(OH)2 are performed; the optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and is measured as 2.50 eV from reflected electrons energy loss spectroscopy (REELS), suggesting the potential as insulating 2D dielectric material for electronic devices. Furthermore, key parameters of the hydrothermal reaction including soaking temperature, starting pH and cooling rate, are systematically tuned to understand their effects on morphological and crystallographic perspectives, allowing the establishment of a 2D growth mechanism. This work demonstrates a scalable pathway to synthesize large 2D LTMHs from simple methods, paving the way for the study of fundamental physical properties and device applications of 2D LTMHs. △ Less

Submitted 25 November, 2022; originally announced November 2022.

Comments: 30 pages, 5 figures

A Cleanroom in a Glovebox

Authors: Mason J. Gray, Narendra Kumar, Ryan O'Connor, Marcel Hoek, Erin Sheridan, Meaghan C. Doyle, Marisa L. Romanelli, Gavin B. Osterhoudt, Yiping Wang, Vincent Plisson, Shiming Lei, Ruidan Zhong, Bryan Rachmilowitz, He Zhao, Hikari Kitadai, Steven Shepard, Leslie M. Schoop, G. D. Gu, Ilija Zeljkovic, Xi Ling, K. S. Burch

Abstract: The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use t… ▽ More The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use the equipment for creating and characterizing materials, calls for a dramatic reduction in the cost to create and operate such facilities. To this end, we present our cleanroom-in-a-glovebox, a system which allows for the fabrication and characterization of devices in an inert argon atmosphere. We demonstrate the ability to perform a wide range of characterization as well as fabrication steps, without the need for a dedicated room, all in an argon environment. Connection to a vacuum suitcase is also demonstrated to enable receiving from and transfer to various ultra-high vacuum (UHV) equipment including molecular-beam epitaxy (MBE) and scanning tunneling microscopy (STM). △ Less

Submitted 27 July, 2020; originally announced July 2020.

Journal ref: Review of Scientific Instruments 91, 073909 (2020)

Modulation Doping via a 2d Atomic Crystalline Acceptor

Authors: Yiping Wang, Jesse Balgley, Eli Gerber, Mason Gray, Narendra Kumar, Xiaobo Lu, Jia-Qiang Yan, Arash Fereidouni, Rabindra Basnet, Seok Joon Yun, Dhavala Suri, Hikari Kitadai, Takashi Taniguchi, Kenji Watanabe, Xi Ling, Jagadeesh Moodera, Young Hee Lee, Hugh O. H. Churchill, Jin Hu, Li Yang, Eun-Ah Kim, David G. Mandrus, Erik A. Henriksen, Kenneth S. Burch

Abstract: Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor de… ▽ More Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN). △ Less

Submitted 15 July, 2020; v1 submitted 13 July, 2020; originally announced July 2020.

Spin-Induced Linear Polarization of Excitonic Emission in Antiferromagnetic van der Waals Crystals

Authors: Xingzhi Wang, Jun Cao, Zhengguang Lu, Arielle Cohen, Hikari Kitadai, Tianshu Li, Matthew Wilson, Chun Hung Lui, Dmitry Smirnov, Sahar Sharifzadeh, Xi Ling

Abstract: Antiferromagnets display enormous potential in spintronics owing to its intrinsic nature, including terahertz resonance, multilevel states, and absence of stray fields. Combining with the layered nature, van der Waals (vdW) antiferromagnets hold the promise in providing new insights and new designs in two-dimensional (2D) spintronics. The zero net magnetic moments of vdW antiferromagnets strengthe… ▽ More Antiferromagnets display enormous potential in spintronics owing to its intrinsic nature, including terahertz resonance, multilevel states, and absence of stray fields. Combining with the layered nature, van der Waals (vdW) antiferromagnets hold the promise in providing new insights and new designs in two-dimensional (2D) spintronics. The zero net magnetic moments of vdW antiferromagnets strengthens the spin stability, however, impedes the correlation between spin and other excitation elements, like excitons. Such coupling is urgently anticipated for fundamental magneto-optical studies and potential opto-spintronic devices. Here, we report an ultra-sharp excitonic emission with excellent monochromaticity in antiferromagnetic nickel phosphorus trisulfides (NiPS3) from bulk to atomically thin flakes. We prove that the linear polarization of the excitonic luminescence is perpendicular to the ordered spin orientation in NiPS3. By applying an in-plane magnetic field to alter the spin orientation, we further manipulate the excitonic emission polarization. Such strong correlation between exciton and spins provides new insights for the study of magneto-optics in 2D materials, and hence opens a path for developing opto-spintronic devices and antiferromagnet-based quantum information technologies. △ Less

Submitted 14 June, 2020; originally announced June 2020.

Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials

Authors: Bingnan Han, Yuxuan Lin, Yafang Yang, Nannan Mao, Wenyue Li, Haozhe Wang, Kenji Yasuda, Xirui Wang, Valla Fatemi, Lin Zhou, Joel I-Jan Wang, Qiong Ma, Yuan Cao, Daniel Rodan-Legrain, Ya-Qing Bie, Efrén Navarro-Moratalla, Dahlia Klein, David MacNeill, Sanfeng Wu, Hikari Kitadai, Xi Ling, Pablo Jarillo-Herrero, Jing Kong, Jihao Yin, Tomás Palacios

Abstract: Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the d… ▽ More Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries. △ Less

Submitted 27 January, 2020; v1 submitted 26 June, 2019; originally announced June 2019.