Showing 1–6 of 6 results for author: Satterthwaite, P F

Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer

Authors: Peter F. Satterthwaite, Weikun Zhu, Patricia Jastrzebska-Perfect, Melbourne Tang, Hongze Gao, Hikari Kitadai, Ang-Yu Lu, Qishuo Tan, Shin-Yi Tang, Yu-Lun Chueh, Chia-Nung Kuo, Chin Shan Lue, Jing Kong, Xi Ling, Farnaz Niroui

Abstract: Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limita… ▽ More Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated. △ Less

Submitted 12 February, 2023; originally announced February 2023.

Stable Operation of AlGaN/GaN HEMTs at 400$^\circ$C in air for 25 hours

Authors: Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite, Scott William Blankenberg, Caitlin Chapin, Debbie G. Senesky

Abstract: In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22$^\circ$C to 500$^\circ$C. The variation in the threshold voltage ($V_{th}$) is less than 1$\%$ over the entire temperature range. Moreover, a safe biasing region where the transconductance peak ($g_m$) occurs over the entire temperature range was observed, enabling high-temperature… ▽ More In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22$^\circ$C to 500$^\circ$C. The variation in the threshold voltage ($V_{th}$) is less than 1$\%$ over the entire temperature range. Moreover, a safe biasing region where the transconductance peak ($g_m$) occurs over the entire temperature range was observed, enabling high-temperature analog circuit design. Furthermore, the operation of the devices over 25 hours was experimentally studied, demonstrating the stability of the DC characteristics and $V_{th}$ at 400$^\circ$C. Finally, the degradation mechanisms of HEMTs at 500$^\circ$C over 25 hours of operation are discussed, and are shown to be associated with the 2DEG sheet density and mobility decrease. △ Less

Submitted 1 March, 2019; originally announced March 2019.

Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume

Authors: Hannah S. Alpert, Ananth Saran Yalamarthy, Peter F. Satterthwaite, Elizabeth Jens, Jason Rabinovitch, Noah Scandrette, A. K. M. Newaz, Ashley C. Karp, Debbie G. Senesky

Abstract: Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photodetectors fabricated using this material useful for in-situ flame detection and combustion monitoring. In this paper, we use a GaN photodetector to measure ultraviolet (UV) emi… ▽ More Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photodetectors fabricated using this material useful for in-situ flame detection and combustion monitoring. In this paper, we use a GaN photodetector to measure ultraviolet (UV) emissions from a hybrid rocket motor igniter plume. The normalized photocurrent-to-dark current ratio (NPDR) is a performance metric which simultaneously captures the two desired characteristics of high responsivity and low dark current. The NPDR of our device is record-high with a value of 6 x 10$^{14}$ W$^{-1}$ and the UV-to-visible rejection ratio is 4 x 10$^6$. The photodetector shows operation at high temperatures (up to 250°C), with the NPDR still remaining above 10$^9$ W$^{-1}$ and the peak wavelength shifting from 362 nm to 375 nm. The photodetector was placed at three radial distances (3", 5.5", and 7") from the base of the igniter plume and the oxidizer-to-fuel ratio (O2/CH4) was varied. The data demonstrates a clear trend of increasing current (and thus intensity of plume emission) with increasing fuel concentration and decreasing separation between the photodetector and the plume. By treating the plume as a black body, and calculating a radiative configuration factor corresponding to the geometry of the plume and the detector, we calculated average plume temperatures at each of the three oxidizer-to-fuel ratios. The estimated plume temperatures were between 850 and 950 K for all three combustion conditions. The temperature is roughly invariant for a fixed fuel concentration for the three tested distances. These data demonstrate the functionality of GaN as a material platform for use in harsh environment flame monitoring. △ Less

Submitted 6 February, 2019; originally announced February 2019.

Comments: Accepted to IEEE Aerospace Conference 2019

Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall-effect Plates using Current Spinning

Authors: Karen M. Dowling, Hannah S. Alpert, Ananth Saran Yalamarthy, Peter F. Satterthwaite, Sai Kumar, Helmut Koeck, Udo Ausserlechner, Debbie G. Senesky

Abstract: This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce sensor offset voltage to values in the range of 20 nV, which corresponds to a low residual offset of 2.6 micro-Tesla when supplied with low voltages (0.04 to 0.5V). These offsets are 50x smaller than the values previousl… ▽ More This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce sensor offset voltage to values in the range of 20 nV, which corresponds to a low residual offset of 2.6 micro-Tesla when supplied with low voltages (0.04 to 0.5V). These offsets are 50x smaller than the values previously reported for GaN Hall-effect plates, and it is on par with state-of-the-art silicon Hall-effect plates. In addition, the offset does not exceed 10 micro-Tesla even at higher supply voltage of 2.34V. The sensor also shows stable current-scaled sensitivity over a wide temperature range of -100C to 200C, with temperature drift of -125 ppm/C. This value is 3x better than state-of-the-art Silicon Hall-effect plates. Additionally, the sensor's voltage sensitivity (57 mV/V/T) is also similar. Because of their low offset values, AlGaN/GaN Hall-effect plates are viable candidates for low-field and high temperature magnetic sensing in monolithic GaN systems used in extreme temperature environments such as power inverter, down-well, combustion, and space applications. △ Less

Submitted 28 December, 2018; v1 submitted 2 December, 2018; originally announced December 2018.

Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas

Authors: Ananth Saran Yalamarthy, Miguel Muñoz Rojo, Alexandra Bruefach, Derrick Boone, Karen M. Dowling, Peter F. Satterthwaite, David Goldhaber-Gordon, Eric Pop, Debbie G. Senesky

Abstract: In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimension… ▽ More In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimensional electron gas (2DEG). We find that phonon drag does not contribute significantly to the thermoelectric behavior of devices with ~100 nm GaN thickness, which suppress the phonon mean free path. However, when the thickness is increased to ~1.2 $μ$m, up to 32% (88%) of the Seebeck coefficient at 300 K (50 K) can be attributed to the drag component. In turn, the phonon drag enables state-of-the-art thermoelectric power factor in the thicker GaN film, up to ~40 mW m$^{-1}$ K$^{-2}$ at 50 K. By measuring the thermal conductivity of these AlGaN/GaN films, we show that the magnitude of the phonon drag can increase even when the thermal conductivity decreases. Decoupling of thermal conductivity and Seebeck coefficient could enable important advancements in thermoelectric power conversion with devices based on 2DEGs. △ Less

Submitted 15 May, 2019; v1 submitted 21 September, 2018; originally announced September 2018.

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

Authors: Peter F. Satterthwaite, Ananth Saran Yalamarthy, Noah A. Scandrette, A. K. M. Newaz, Debbie G. Senesky

Abstract: An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record high normalized photocurrent-to-dark current ratio (NPDR, $6\times10^{14}$). In addition, we observe a high responsivity ($7,800$ A/W) and ultraviolet-visible… ▽ More An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record high normalized photocurrent-to-dark current ratio (NPDR, $6\times10^{14}$). In addition, we observe a high responsivity ($7,800$ A/W) and ultraviolet-visible rejection-ratio ($10^{6}$), among the highest reported values for any GaN photodetector architecture. We propose a gain mechanism to explain the high responsivity of this device architecture, which corresponds to an internal gain of $26,000$. We argue that the valence band offset in the AlGaN/GaN heterostructure is essential in achieving this high responsivity, allowing for large gains without necessitating the presence of trap states, in contrast to common metal-semiconductor-metal (MSM) photodetector architectures. Our proposed gain mechanism is consistent with measurements of the scaling of gain with device channel width and incident power. In addition to high performance, this photodetector architecture has a simple two-step fabrication flow that is monolithically compatible with AlGaN/GaN high electron mobility transistor (HEMT) processing. This unique combination of low dark current, high responsivity and compatibility with HEMT processing is attractive for a variety of UV sensing applications. △ Less

Submitted 16 August, 2018; originally announced August 2018.