Showing 1–3 of 3 results for author: Niroui, F

Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer

Authors: Peter F. Satterthwaite, Weikun Zhu, Patricia Jastrzebska-Perfect, Melbourne Tang, Hongze Gao, Hikari Kitadai, Ang-Yu Lu, Qishuo Tan, Shin-Yi Tang, Yu-Lun Chueh, Chia-Nung Kuo, Chin Shan Lue, Jing Kong, Xi Ling, Farnaz Niroui

Abstract: Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limita… ▽ More Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated. △ Less

Submitted 12 February, 2023; originally announced February 2023.

Precise Fabrication of Uniform Molecular Gaps for Active Nanoscale Devices

Authors: Farnaz Niroui, Mayuran Saravanapavanantham, Jinchi Han, Jatin J. Patil, Timothy M. Swager, Jeffrey H. Lang, Vladimir Bulović

Abstract: Molecules with versatile functionalities and well-defined structures, can serve as building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of metal-molecule-metal architectures. Structural damage and nonuniformities caused by current fabrication techniques, however, limit their effective incorporation. Here,… ▽ More Molecules with versatile functionalities and well-defined structures, can serve as building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of metal-molecule-metal architectures. Structural damage and nonuniformities caused by current fabrication techniques, however, limit their effective incorporation. Here, we present a hybrid fabrication approach enabling uniform molecular gaps. Template-stripped lithographically-patterned gold electrodes with sub-nanometer roughness are used as the bottom contacts upon which the molecular layer is formed through self-assembly. The top contacts are assembled using dielectrophoretic trapping of colloidal gold nanorods, resulting in uniform sub-5 nm junctions. In these electrically-active designs, we further explore the possibility of mechanical tunability. The presence of molecules may help control sub-nanometer mechanical modulation which is conventionally difficult to achieve due to instabilities caused by surface adhesive forces. Our approach is versatile, providing a platform to develop and study active molecular gaps towards functional nanodevices. △ Less

Submitted 26 June, 2020; originally announced June 2020.

Local Strain Heterogeneity Influences the Optoelectronic Properties of Halide Perovskites

Authors: Timothy W. Jones, Anna Osherov, Mejd Alsari, Melany Sponseller, Benjamin C. Duck, Young-Kwang Jung, Charles Settens, Farnaz Niroui, Roberto Brenes, Camelia V. Stan, Yao Li, Mojtaba Abdi-Jalebi, Nobumichi Tamura, J. Emyr Macdonald, Manfred Burghammer, Richard H. Friend, Vladimir Bulović, Aron Walsh, Gregory J. Wilson, Samuele Lilliu, Samuel D. Stranks

Abstract: Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of… ▽ More Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. By combining scanning X-ray diffraction beamlines at two different synchrotrons with high-resolution transmission electron microscopy, we reveal levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). We find that local strain is associated with enhanced defect concentrations, and correlations between the local structure and time-resolved photoluminescence reveal that these strain-related defects are the cause of non-radiative recombination. We reveal a direct connection between defect concentrations and non-radiative losses, as well as complex heterogeneity across multiple length scales, shedding new light on the presence and influence of structural defects in halide perovskites. △ Less

Submitted 15 May, 2018; v1 submitted 3 March, 2018; originally announced March 2018.