Growth of aligned and twisted hexagonal boron nitride on Ir(110)
Authors:
Thomas Michely,
Jason Bergelt,
Affan Safeer,
Alexander Bäder,
Tobias Hartl,
Jeison Fischer
Abstract:
The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned single hexagonal boron nitride on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twi…
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The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned single hexagonal boron nitride on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twisted h-BN The presence of the h-BN overlayer suppresses the formation of the nano-faceted ridge pattern known from clean Ir(110). Instead, we observe the formation of a (1 $\times$ n) reconstruction, with n such that the missing rows are in registry with the h-BN/Ir(110) moiré pattern. Our moiré analysis showcases a precise methodology for determining both the moiré periodicity and the h-BN lattice parameter on an fcc(110) surface.
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Submitted 11 August, 2023;
originally announced August 2023.
Novel 2D vanadium sulphides: synthesis, atomic structure engineering and charge density waves
Authors:
Camiel van Efferen,
Joshua Hall,
Nicolae Atodiresei,
Virgínia Boix,
Affan Safeer,
Tobias Wekking,
Nikolay Vinogradov,
Alexei Preobrajensk,
Jan Knudsen,
Jeison Fischer,
Wouter Jolie,
Thomas Michely
Abstract:
Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pr…
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Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pressure during annealing. Through annealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of density-functional theory calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. By depositing larger amounts of vanadium and sulphur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2x2 V-layers between sheets of VS2. We provide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V5S8-derived islands.
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Submitted 13 February, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
