Novel 2D vanadium sulphides: synthesis, atomic structure engineering and charge density waves
Authors:
Camiel van Efferen,
Joshua Hall,
Nicolae Atodiresei,
Virgínia Boix,
Affan Safeer,
Tobias Wekking,
Nikolay Vinogradov,
Alexei Preobrajensk,
Jan Knudsen,
Jeison Fischer,
Wouter Jolie,
Thomas Michely
Abstract:
Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pr…
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Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pressure during annealing. Through annealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of density-functional theory calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. By depositing larger amounts of vanadium and sulphur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2x2 V-layers between sheets of VS2. We provide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V5S8-derived islands.
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Submitted 13 February, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
A full gap above the Fermi level: the charge density wave of monolayer VS2
Authors:
Camiel van Efferen,
Jan Berges,
Joshua Hall,
Erik van Loon,
Stefan Kraus,
Arne Schobert,
Tobias Wekking,
Felix Huttmann,
Eline Plaar,
Nico Rothenbach,
Katharina Ollefs,
Lucas Machado Arruda,
Nick Brookes,
Gunnar Schoenhoff,
Kurt Kummer,
Heiko Wende,
Tim Wehling,
Thomas Michely
Abstract:
In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal--insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS$_2$ realizes a CDW which stands out of this standard model. There is a…
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In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal--insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS$_2$ realizes a CDW which stands out of this standard model. There is a full CDW gap residing in the unoccupied states of monolayer VS$_2$. At the Fermi level, the CDW induces a topological metal-metal (Lifshitz) transition. Non-linear coupling of transverse and longitudinal phonons is essential for the formation of the CDW and the full gap above the Fermi level. Additionally, x-ray magnetic circular dichroism reveals the absence of net magnetization in this phase, pointing to coexisting charge and spin density waves in the ground state.
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Submitted 8 September, 2021; v1 submitted 4 January, 2021;
originally announced January 2021.
