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Novel 2D vanadium sulphides: synthesis, atomic structure engineering and charge density waves
Authors:
Camiel van Efferen,
Joshua Hall,
Nicolae Atodiresei,
Virgínia Boix,
Affan Safeer,
Tobias Wekking,
Nikolay Vinogradov,
Alexei Preobrajensk,
Jan Knudsen,
Jeison Fischer,
Wouter Jolie,
Thomas Michely
Abstract:
Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pr…
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Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pressure during annealing. Through annealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of density-functional theory calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. By depositing larger amounts of vanadium and sulphur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2x2 V-layers between sheets of VS2. We provide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V5S8-derived islands.
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Submitted 13 February, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
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Wafer scale growth and characterization of edge specific graphene nanoribbons
Authors:
Alexei A. Zakharov,
Nikolay A. Vinogradov,
Johannes Aprojanz,
Christoph Tegenkamp,
Claudia Struzzi,
Tikhomir Yakimov,
Rositsa Yakimova,
Valdas Jokubavicius
Abstract:
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality…
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One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality GNR with excellent transport properties [2-7]. Such epitaxial graphene nanoribbons are very important in fundamental science but if GNR are supposed to be used in advanced nanoelectronics, high quality thin (<50nm) nanoribbons should be produced on a large (wafer) scale. Here we present a technique for scalable template growth of high quality GNR on Si-face of SiC(0001) and provide detailed structural information along with transport properties. We succeeded to grow GNR along both [1-100] and [11-20] crystallographic directions. The quality of the grown nanoribbons was confirmed by comprehensive characterization with high resolution STM, dark field LEEM and transport measurements.
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Submitted 26 September, 2018;
originally announced September 2018.
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Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies
Authors:
N. N. Loshkareva,
E. A. Gan'shina,
B. I. Belevtsev,
Yu. P. Sukhorukov,
E. V. Mostovshchikova,
A. N. Vinogradov,
V. B. Krasovitsky,
I. N. Chukanova
Abstract:
Optical absorption and transverse Kerr effect spectra, resistivity and magnetoresistance of La$_{1-x}$Sr$_{x}$CoO$_3$ ($x=0.15, 0.25, 0.35$) films have been studied. The temperature dependencies of the optical and magneto-optical properties of the films exhibit features, which can be attributed to the transition of the Co$^{3+}$ ions from the low-spin state (S=0) to the intermediate-spin state (…
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Optical absorption and transverse Kerr effect spectra, resistivity and magnetoresistance of La$_{1-x}$Sr$_{x}$CoO$_3$ ($x=0.15, 0.25, 0.35$) films have been studied. The temperature dependencies of the optical and magneto-optical properties of the films exhibit features, which can be attributed to the transition of the Co$^{3+}$ ions from the low-spin state (S=0) to the intermediate-spin state (S=1) and to orbital ordering of the Co$^{3+}$ ions in the latter state. The evolution of the properties influenced by doping with Sr is interpreted on the basis of the phase separation model.
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Submitted 25 June, 2003;
originally announced June 2003.
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Giant change in IR light transmission in La_{0.67}Ca_{0.33}MnO_{3} film near the Curie temperature: promising application in optical devices
Authors:
Yu. P. Sukhorukov,
E. A. Gan'shina,
B. I. Belevtsev,
N. N. Loshkareva,
A. N. Vinogradov,
K. D. D. Rathnayaka,
A. Parasiris,
D. G. Naugle
Abstract:
Transport, magnetic, magneto-optical (Kerr effect) and optical (light absorption) properties have been studied in an oriented polycrystalline La_{0.67}Ca_{0.33}MnO_{3} film which shows colossal magneto-resistance. The correlations between these properties are presented. A giant change in IR light transmission (more than a 1000-fold decrease) is observed on crossing the Curie temperature (about 2…
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Transport, magnetic, magneto-optical (Kerr effect) and optical (light absorption) properties have been studied in an oriented polycrystalline La_{0.67}Ca_{0.33}MnO_{3} film which shows colossal magneto-resistance. The correlations between these properties are presented. A giant change in IR light transmission (more than a 1000-fold decrease) is observed on crossing the Curie temperature (about 270 K) from high to low temperature. Large changes in transmittance in a magnetic field were observed as well. The giant changes in transmittance and the large magneto-transmittance can be used for development of IR optoelectronic devices controlled by thermal and magnetic fields. Required material characteristics of doped manganites for these devices are discussed.
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Submitted 3 February, 2002;
originally announced February 2002.
