Showing 1–50 of 71 results for author: Sasioglu, E

Spin-gapped metals: A novel class of materials -- the case of semi-Heusler compounds

Authors: E. Sasioglu, M. Tas, S. Ghosh, W. Beida, B. Sanyal S. Blugel, I. Mertig, I. Galanakis

Abstract: Gapped metals, a recently discovered new class of materials, possess a band gap slightly above or below the Fermi level. These materials are intrinsic p- or n-type semiconductors eliminating the need for extrinsic doping. Inspired by this concept, we propose the so-called "spin-gapped metals" exhibiting intrinsic p- or n-type behavior for each spin channel independently. Their properties would be… ▽ More Gapped metals, a recently discovered new class of materials, possess a band gap slightly above or below the Fermi level. These materials are intrinsic p- or n-type semiconductors eliminating the need for extrinsic doping. Inspired by this concept, we propose the so-called "spin-gapped metals" exhibiting intrinsic p- or n-type behavior for each spin channel independently. Their properties would be similar to the dilute magnetic semiconductors eliminating the requirement for transition metal doping. Here, we demonstrate this novel concept in semi-Heusler compounds using first principles electronic band structure calculations. We comprehensively analyze their electronic and magnetic properties, paving the way for novel technological applications of Heusler compounds. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Nonconventional screening of Coulomb interaction in two-dimensional semiconductors and metals: A comprehensive cRPA study of MX2 (M=Mo, W, Nb, Ta; X=S, Se, Te)

Authors: Hamid Reza Ramezani, Ersoy Sasioglu, Hanif Hadipour, Hamid Rahimpour Soleimani, Christoph Friedrich, Stefan Blugel, Ingrid Mertig

Abstract: Experimental observations of large exciton binding energies and non-hydrogenic Rydberg series in 2D semiconducting TMDs, along with deviations in plasmon dispersion in 2D metallic TMDs, suggest the presence of a nonconventional screening of the Coulomb interaction. The experimentally observed Mott insulating state in the charge density wave (CDW) reconstructed lattice of TMDs containing 4d and 5d… ▽ More Experimental observations of large exciton binding energies and non-hydrogenic Rydberg series in 2D semiconducting TMDs, along with deviations in plasmon dispersion in 2D metallic TMDs, suggest the presence of a nonconventional screening of the Coulomb interaction. The experimentally observed Mott insulating state in the charge density wave (CDW) reconstructed lattice of TMDs containing 4d and 5d elements further confirms the presence of strong Coulomb interactions in these systems. In this study, we use first-principles electronic structure calculations and constrained random-phase approximation to calculate the Coulomb interaction parameters (partially screened U and fully screened W) between localized $d$ electrons in 2D TMDs. We specifically explore materials represented by the formula MX2 (M=Nb, Ta, Mo, W, and X=S, Se, Te) and consider three different phases (1H, 1T, and 1T'). Our results show that the short-range interactions are strongly screened in all three phases, whereas the long-range interactions remain significant even in metallic systems. This nonconventional screening provides a compelling explanation for the deviations observed in the usual hydrogenic Rydberg series and conventional plasmon dispersion in 2D semiconducting and metallic TMDs, respectively. Our calculations yield on-site Coulomb interaction parameters U within the ranges of 0.8-2.5 eV, 0.8-1.9 eV, and 0.9-2.4 eV for the 1H, 1T, and 1T' structures, respectively. Furthermore, our findings indicate a substantially high ratio of on-site effective Coulomb interaction to bandwidth (U_eff/W_b >> 1) in CDW TMDs, providing robust evidence for the experimentally observed strongly correlated Mott phase. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Comments: 22 pages, 13 figures

Journal ref: Phys. Rev. B 109, 125108 (2024)

Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi$_2$N$_4$/HfSi$_2$N$_4$/NbSi$_2$N$_4$ lateral heterojunction diode

Authors: P. Bodewei, E. Şaşıoğlu, N. F. Hinsche, I. Mertig

Abstract: Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit. Recently discovered two-dimensional (2D) MA$_2$Z$_4$ (M = Ti, Zr, Hf, Nb, Ta; A = Si, Ge; Z = N, P) compounds exhibit both cold metallic and semiconducting behav… ▽ More Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit. Recently discovered two-dimensional (2D) MA$_2$Z$_4$ (M = Ti, Zr, Hf, Nb, Ta; A = Si, Ge; Z = N, P) compounds exhibit both cold metallic and semiconducting behavior. In this work, we present a computational study of lateral heterojunction tunnel diodes based on 2D NbSi$_2$N$_4$ and HfSi$_2$N$_4$ compounds. Employing density functional theory combined with a nonequilibrium Green function method, we investigate the current-voltage ($I$-$V$) characteristics of lateral tunnel diodes with varying barrier thicknesses in both zigzag and armchair orientations. We find that tunnel diodes in the zigzag orientation exhibit significantly higher peak current densities, while those in the armchair orientation display larger peak-to-valley current ratios (PVCRs) compared to the zigzag orientation. Our findings suggest that MA$_2$Z$_4$ materials are promising candidates for realizing NDR tunnel diodes with high PVCR values, which could have potential applications in memory, logic circuits, and other electronic devices. △ Less

Submitted 18 June, 2024; v1 submitted 13 December, 2023; originally announced December 2023.

Comments: ver3.0 with supplemental material

Journal ref: Phys. Rev. Applied 22, 014004, 2024

First-principles prediction of energy band gaps in 18-valence electron semiconducting half-Heusler compounds: Exploring the role of exchange and correlation

Authors: Emel Gurbuz, Murat Tas, Ersoy Sasioglu, Ingrid Mertig, Biplab Sanyal, Iosif Galanakis

Abstract: The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including the conventional generalized-gradient approximation (GGA) functionals, meta-GGA functionals, and hybrid functionals, show significant differences in the calculated energy bandgap for semiconducting half-Heusler compounds.… ▽ More The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including the conventional generalized-gradient approximation (GGA) functionals, meta-GGA functionals, and hybrid functionals, show significant differences in the calculated energy bandgap for semiconducting half-Heusler compounds. These compounds, which have 18 valence electrons per unit cell, are of great interest due to their thermoelectric properties, making them suitable for energy conversion applications. In addition, accounting for electronic correlations using the GW method also affects the calculated energy bandgaps compared to standard GGA calculations. The variations in calculated energy bandgaps are specific to each material when using different functionals. Hence, a detailed investigation of the electronic properties of each compound is necessary to determine the most appropriate functional for an accurate description of the electronic properties. Our results indicate that no general rules can be established and a comparison with experimental results is required to determine the most appropriate functional. △ Less

Submitted 7 December, 2023; v1 submitted 6 December, 2023; originally announced December 2023.

Journal ref: Journal of Applied Physics 134, 205703 (2023)

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

Authors: Emel Gurbuz, Sukanya Ghosh, Ersoy Sasioglu, Iosif Galanakis, Ingrid Mertig, Biplab Sanyal

Abstract: Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction inter… ▽ More Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction interfaces become not only metallic but also magnetic. The emergence of spin-polarization is accompanied by the formation of two-dimensional electron gas (2DEG) or hole gas (2DHG) at the interface. We qualitatively discuss the origin of the spin polarization at the interfaces on the basis of the Stoner model. For the cases of magnetic interfaces where half-metallicity is also present, we propose a modified Slater-Pauling rule similar to the one for bulk half-metallic half-Heusler compounds. Additionally, we calculate exchange parameters, Curie temperatures and magnetic anisotropy energies for magnetic interfaces. Our study, combined with the recent experimental evidence for the presence of 2DEG at CoTiSb/NiTiSn heterojunctions might motivate future efforts and studies toward the experimental realization of devices using the proposed heterojunctions. △ Less

Submitted 9 February, 2023; originally announced February 2023.

Comments: 13 pages, 9 figures

Ab-initio calculation of the Hubbard $U$ and Hund exchange $J$ in local moment magnets: The case of Mn-based full Heusler compounds

Authors: M. Tas, E. Sasioglu, S. Blugel, I. Mertig, I. Galanakis

Abstract: Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the ef… ▽ More Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the effective on-site Coulomb interaction parameters (Hubbard U and Hund exchange J) in the case of X2MnZ full Heusler compounds with X being one of Ni, Pd or Cu, and Z being one of In, Sn, Sb or Te. We show that the Z element (or sp element) in Heusler compounds significantly reduces the strength of the Hubbard U parameter for Mn 3d electrons compared to the elementary bulk Mn. On the contrary, the effect of the sp-atom on the strength of the U parameter of Ni, Cu or Pd valence d electrons is not so substantial with respect to the elementary bulk values. The U values for all transition metal atoms decrease with increasing sp electron number in the In-Sn-Sb-Te sequence. Our cRPA calculations reveal that despite their well-defined local magnetic moments, the Mn-based full Heusler alloys fall into the category of the weakly correlated materials. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Comments: Physical Review Materials, accepted for publication

Journal ref: Physical Review Materials 6. 114101 (2022)

Proposal for semiconductor-free negative differential resistance tunnel diode with ultra-high peak-to-valley current ratio

Authors: Ersoy Sasioglu, Ingrid Mertig

Abstract: The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated… ▽ More The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated by a thin insulating tunnel barrier. The NDR effect stems from the unique electronic band structure of the cold metal electrodes, i.e., the width of the isolated metallic bands around the Fermi level as well as the energy gaps separating higher- and lower-lying bands determine the current-voltage ($I$-$V$) characteristics and the PVCR value of the tunnel diode. By proper choice of the cold metal electrode materials, either a conventional N-type or $Λ$-type NDR effect can be obtained. Two-dimensional (2D) materials offer a unique platform for the realization of proposed NDR tunnel diodes. To demonstrate the proof of concept we employ the nonequilibrium Green function method combined with density functional theory to calculate the $I$-$V$ characteristic of the lateral (AlI$_2$/MgI$_2$/AlI$_2$) and vertical (NbS$_2$/h-BN/NbS$_2$) heterojunction tunnel diodes based on 2D cold metals. For the lateral tunnel diode, we obtain a $Λ$-type NDR effect with an ultra-high PVCR value of 10$^{16}$ at room temperature, while the vertical tunnel diode exhibits a conventional N-type NDR effect with a smaller PVCR value of about 10$^4$. The proposed concept provides a semiconductor-free solution for NDR devices to achieve desired $I$-$V$ characteristics with ultra-high PVCR values for memory and logic applications. △ Less

Submitted 25 October, 2022; v1 submitted 6 July, 2022; originally announced July 2022.

Comments: 9 pages, 6 figures

$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

Authors: T. Aull, E. Şaşıoğlu, N. F. Hinsche, I. Mertig

Abstract: Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based… ▽ More Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode effect, which was achieved in a magnetic tunnel junction concept based on HMMs and type-II spin-gapless semiconductors (SGSs). The proposed concept has recently been experimentally demonstrated using Heusler compounds. In the present work, we investigate from first-principles MTJs based on type-II SGS and HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb. Our $ab$ $initio$ quantum transport calculations based on a nonequilibrium Green's function method have demonstrated that the MTJs under consideration exhibit current rectification with relatively high on:off ratios. We show that, in contrast to conventional semiconductor diodes, the rectification bias voltage window (or breakdown voltage) of the MTJs is limited by the spin gap of the HMM and SGS Heusler compounds. A unique feature of the present MTJs is that the diode effect can be configured dynamically, i.e., depending on the relative orientation of the magnetization of the electrodes, the MTJ allows the electrical current to pass either in one or the other direction, which leads to an inverse TMR effect. The combination of nonvolatility, reconfigurable diode functionality, tunable rectification voltage window, and high Curie temperature of the electrode materials makes the proposed MTJs very promising for room-temperature spintronic applications and opens ways to magnetic memory and logic concepts as well as logic-in-memory computing. △ Less

Submitted 2 September, 2022; v1 submitted 14 February, 2022; originally announced February 2022.

Comments: 14+7 pages, 7+10 figures

Externally controlled and switchable 2D electron gas at the Rashba interface between ferroelectrics and heavy $d$ metals

Authors: Thorsten Aull, Igor V. Maznichenko, Sergey Ostanin, Ersoy Şaşıoğlu, Ingrid Mertig

Abstract: Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrath… ▽ More Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrathin platinum and palladium layers grown on ferroelectric PbTiO$_3$(001). The latter allows, in principle, to switch and control the spin-to-charge conversion by the polarization reversal. We show how the band structure and its Rashba splitting differ in the Pt and Pd overlayers and how these electronic features change with increasing the overlayer thickness and upon reversal of polarization. Besides, for both overlayers, we simulated their current-voltage ($I-V$) characteristics, the resistance of which upon the polarization reversal changes between 20% and several hundred percent. The reported findings can be used to model directly the Rashba-Edelstein effect. △ Less

Submitted 8 November, 2021; v1 submitted 5 November, 2021; originally announced November 2021.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. Research 3, 043110 (2021)

Atomic scale control of spin current transmission at interfaces

Authors: Mohamed Amine Wahada, Ersoy Sasioglu, Wolfgang Hoppe, Xilin Zhou, Hakan Deniz, Reza Rouzegar, Tobias Kampfrath, Ingrid Mertig, Stuart S. P. Parkin, Georg Woltersdorf

Abstract: Spin transmission at ferromagnet/heavy metal interfaces is of vital importance for many spintronic devices. Usually the spin current transmission is limited by the spin mixing conductance and loss mechanisms such as spin memory loss. In order to understand these effects, we study the interface transmission when an insulating interlayer is inserted between the ferromagnet and the heavy metal. For t… ▽ More Spin transmission at ferromagnet/heavy metal interfaces is of vital importance for many spintronic devices. Usually the spin current transmission is limited by the spin mixing conductance and loss mechanisms such as spin memory loss. In order to understand these effects, we study the interface transmission when an insulating interlayer is inserted between the ferromagnet and the heavy metal. For this we measure the inverse spin Hall voltage generated from optically injected spin current pulses as well as the magnitude of the spin pumping using ferromagnetic resonance. From our results we conclude that significant spin memory loss only occurs for 5d metals with less than half filled d-shell. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions

Authors: M. Raju, A. P. Petrović, A. Yagil, K. S. Denisov, N. K. Duong, B. Göbel, E. Şaşıoğlu, O. M. Auslaender, I. Mertig, I. V. Rozhansky, C. Panagopoulos

Abstract: The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary betw… ▽ More The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary between isolated skyrmions and a disordered skyrmion lattice result in a power-law enhancement of the topological Hall resistivity by up to three orders of magnitude. Our work reveals the dominant role of skyrmion stability and configuration in determining the magnitude of the topological Hall effect. △ Less

Submitted 17 May, 2021; originally announced May 2021.

Comments: 10 pages, 3 figures

Journal ref: Nat Commun 12, 2758 (2021)

Strength of effective Coulomb interaction in two-dimensional transition-metal Halides MX$_2$ and MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I)

Authors: Y. Yekta, H. Hadipour, E. Sasioglu, C. Friedrich, S. A. Jafari, S. Bluegel, I. Mertig

Abstract: We calculate the strength of the effective onsite Coulomb interaction (Hubbard $U$) in two-dimensional (2D) transition-metal (TM) dihalides MX$_2$ and trihalides MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constrained random-phase approximation. The correlated subspaces are formed from $t_{2g}$ or $e_g$ bands at the Fermi energy. Elimination of the efficient s… ▽ More We calculate the strength of the effective onsite Coulomb interaction (Hubbard $U$) in two-dimensional (2D) transition-metal (TM) dihalides MX$_2$ and trihalides MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constrained random-phase approximation. The correlated subspaces are formed from $t_{2g}$ or $e_g$ bands at the Fermi energy. Elimination of the efficient screening taking place in these narrow bands gives rise to sizable interaction parameters U between the localized $t_{2g}$ ($e_g$) electrons. Due to this large Coulomb interaction, we find $U/W >1$ (with the band width $W$) in most TM halides, making them strongly correlated materials. Among the metallic TM halides in paramagnetic state, the correlation strength $U/W$ reaches a maximum in NiX$_2$ and CrX$_3$ with values much larger than the corresponding values in elementary TMs and other TM compounds. Based on the Stoner model and the calculated $U$ and $J$ values, we discuss the tendency of the electron spins to order ferromagnetically. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Materials, 5 (2021) 034001

First principles design of Ohmic spin diodes based on quaternary Heusler compounds

Authors: T. Aull, E. Şaşıoğlu, I. Mertig

Abstract: The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family… ▽ More The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Green's function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage ($I-V$) characteristics with zero threshold voltage $V_T$. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between $30$ and $10^5$. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds. △ Less

Submitted 3 February, 2021; originally announced February 2021.

Comments: 7 pages, 5 figures

Journal ref: Appl. Phys. Lett. 118, 052405 (2021)

Half-Metal Spin-Gapless Semiconductor Junctions as a Route to the Ideal Diode

Authors: E. Şaşıoğlu, T. Aull, D. Kutschabsky, S. Blügel, I. Mertig

Abstract: The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to powe… ▽ More The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to power dissipation in the form of heat and hence is an undesirable feature. In this work, based on half-metallic magnets and spin-gapless semiconductors we propose a diode concept that does not have a junction barrier and the operation principle of which relies on the spin-dependent transport properties of the HMM and SGS materials. We show that the HMM and SGS materials form an Ohmic contact under any finite forward bias, while for a reverse bias the current is blocked due to spin-dependent filtering of the electrons. Thus, the HMM-SGS junctions act as a diode with zero threshold voltage $V_T$, and linear $I-V$ characteristics as well as an infinite on:off ratio at zero temperature. However, at finite temperatures, non-spin-flip thermally excited high-energy electrons as well as low-energy spin-flip excitations can give rise to a leakage current and thus reduce the on:off ratio under a reverse bias. Furthermore, a zero threshold voltage allows one to detect extremely weak signals and due to the Ohmic HMM-SGS contact, the proposed diode has a much higher current drive capability and low resistance, which is advantageous compared to conventional semiconductor diodes. We employ the NEGF method combined with DFT to demonstrate the linear $I-V$ characteristics of the proposed diode based on two-dimensional half-metallic Fe/MoS$_2$ and spin-gapless semiconducting VS$_2$ planar heterojunctions. △ Less

Submitted 22 September, 2020; originally announced September 2020.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. Applied 14, 014082 (2020)

First-principles study of the electronic and magnetic properties of cubic GdCu compound

Authors: Vikas Kashid, Ersoy Şaşıoğlu, Gustav Bihlmayer, Alexander B. Shick, Stefan Blügel

Abstract: The structural, electronic, and magnetic properties of bulk GdCu (CsCl-type) are investigated using spin density functional theory, where highly localized $4f$ orbitals are treated within LDA+$U$ and GGA+$U$ methods. The calculated magnetic ground state of GdCu using collinear as well as spin spiral calculations exhibits a C-type antiferromagnetic configuration representing a spin spiral propagati… ▽ More The structural, electronic, and magnetic properties of bulk GdCu (CsCl-type) are investigated using spin density functional theory, where highly localized $4f$ orbitals are treated within LDA+$U$ and GGA+$U$ methods. The calculated magnetic ground state of GdCu using collinear as well as spin spiral calculations exhibits a C-type antiferromagnetic configuration representing a spin spiral propagation vector $\mathbf{Q}=\frac{2π}{a}(\frac{1}{2},\frac{1}{2},0)$. The parameters of the effective Heisenberg Hamiltonian are evaluated from a self-consistent electronic structure and are used to determine the magnetic transition temperature. The estimated Néel temperature of the cubic GdCu using GGA+$U$ and LDA+$U$ density functionals within the mean field and random phase approximations are in good agreement with the experimentally measured values. In particular, the theoretical understanding of the experimentally observed core Gd $4f$ levels shifting in photoemission spectroscopy experiments is investigated in detail. By employing the self-consistent constrained random-phase approximation we determined the strength of the effective Coulomb interaction (Hubbard $U$) between localized $4f$ electrons. We find that, the shift of Gd-$4f$ states in GdCu with respect to bulk Gd within DFT+$U$ is sensitive to choice of lattice parameter. The calculations for $4f$-level shifts using DFT+$U$ methods as well as Hubbard-1 approximation are not consistent with the experimental findings. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Comments: 12 Pages, 8 figures

Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors

Authors: T. Aull, E. Şaşıoğlu, I. V. Maznichenko, S. Ostanin, A. Ernst, I. Mertig, I. Galanakis

Abstract: Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with simil… ▽ More Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and identify suitable candidates for these spintronic devices combining the desirable properties: (i) HMMs with sizable energy gap or SGSs with spin gaps both below and above the Fermi level, (ii) high Curie temperature, (iii) convex hull energy distance less than 0.20 eV, and (iv) negative formation energies. Our results pave the way for the experimental realization of the proposed magnetic tunnel diodes and transistors. △ Less

Submitted 20 January, 2020; originally announced January 2020.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. Materials 3, 124415 (2019)

Ab-initio study of the Coulomb interaction in NbxCo clusters: Strong on-site versus weak non-local screening

Authors: L. Peters, E. Sasioglu, I. Mertig, M. I. Katsnelson

Abstract: By means of ab-initio calculations in conjunction with the random-phase approximation (RPA) within the full-potential linearized augmented plane wave method we study the screening of the Coulomb interaction in NbxCo (1<=x<=9) clusters. In addition, these results are compared with pure bcc Nb bulk. We find that for all clusters the onsite Coulomb interaction in RPA is strongly screened whereas the… ▽ More By means of ab-initio calculations in conjunction with the random-phase approximation (RPA) within the full-potential linearized augmented plane wave method we study the screening of the Coulomb interaction in NbxCo (1<=x<=9) clusters. In addition, these results are compared with pure bcc Nb bulk. We find that for all clusters the onsite Coulomb interaction in RPA is strongly screened whereas the inter-site non-local Coulomb interaction is weakly screened and for some clusters it is unscreened or even anti-screened. This is in strong contrast with pure Nb bulk, where the inter-site Coulomb interaction is almost completely screened. Further, constrained RPA calculations reveal that the contribution of the Co 3d ! 3d channel to the total screening of the Co 3d electrons is small. Moreover, we find that both the onsite and inter-site Coulomb interaction parameters decrease in a reasonable approximation linearly with the cluster size and for clusters having more than 20 Nb atoms a transition from 0D to 3D screening is expected to take place. △ Less

Submitted 10 January, 2018; originally announced January 2018.

Local magnetic moments in iron and nickel at ambient and Earth's core conditions

Authors: A. Hausoel, M. Karolak, E. Sasioglu, A. Lichtenstein, K. Held, A. Katanin, A. Toschi, G. Sangiovanni

Abstract: Some Bravais lattices have a particular geometry that can slow down the motion of Bloch electrons by pre-localization due to the band-structure properties. Another known source of electronic localization in solids is the Coulomb repulsion in partially filled d- or f-orbitals, which leads to the formation of local magnetic moments. The combination of these two effects is usually considered of littl… ▽ More Some Bravais lattices have a particular geometry that can slow down the motion of Bloch electrons by pre-localization due to the band-structure properties. Another known source of electronic localization in solids is the Coulomb repulsion in partially filled d- or f-orbitals, which leads to the formation of local magnetic moments. The combination of these two effects is usually considered of little relevance to strongly correlated materials. Here we show that it represents, instead, the underlying physical mechanism in two of the most important ferromagnets: nickel and iron. In nickel, the van Hove singularity has an unexpected impact on the magnetism. As a result, the electron-electron scattering rate is linear in temperature, in violation of the conventional Landau theory of metals. This is true even at Earth's core pressures, at which iron is instead a good Fermi liquid. The importance of nickel in models of geomagnetism may have therefore to be reconsidered. △ Less

Submitted 12 July, 2017; originally announced July 2017.

Comments: Supplementary Information available at https://www.nature.com/articles/ncomms16062#supplementary-information

Journal ref: Nature Communications 8, 16062 (2017)

Nonconventional screening of the Coulomb interaction in FexOy clusters: An ab-initio study

Authors: L. Peters, E. Sasioglu, S. Rossen, C. Friedrich, S. Bluegel, M. I. Katsnelson

Abstract: From microscopic point-dipole model calculations of the screening of the Coulomb interaction in non-polar systems by polarizable atoms, it is known that screening strongly depends on dimensionality. For example, in one dimensional systems the short range interaction is screened, while the long range interaction is anti-screened. This anti-screening is also observed in some zero dimensional structu… ▽ More From microscopic point-dipole model calculations of the screening of the Coulomb interaction in non-polar systems by polarizable atoms, it is known that screening strongly depends on dimensionality. For example, in one dimensional systems the short range interaction is screened, while the long range interaction is anti-screened. This anti-screening is also observed in some zero dimensional structures, i.e. molecular systems. By means of ab-initio calculations in conjunction with the random-phase approximation (RPA) within the FLAPW method we study screening of the Coulomb interaction in FexOy clusters. For completeness these results are compared with their bulk counterpart magnetite. It appears that the onsite Coulomb interaction is very well screened both in the clusters and bulk. On the other hand for the intersite Coulomb interaction the important observation is made that it is almost contant throughout the clusters, while for the bulk it is almost completely screened. More precisely and interestingly, in the clusters anti-screening is observed by means of ab-initio calculations. △ Less

Submitted 18 April, 2017; originally announced April 2017.

Journal ref: http://link.aps.org/doi/10.1103/PhysRevB.95.155119 (2017)

A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds

Authors: M. Tas, E. Sasioglu, C. Friedrich, I. Galanakis

Abstract: Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment o… ▽ More Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment of the electronic correlations, to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of $GW$ self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors. △ Less

Submitted 9 June, 2017; v1 submitted 6 March, 2017; originally announced March 2017.

Comments: Final version as published

Journal ref: Journal of Magnetism and Magnetic Materials 441, 333 (2017)

Interplay of nematic and magnetic orders in FeSe under pressure

Authors: Daniel D. Scherer, Anthony Jacko, Christoph Friedrich, Ersoy Sasioglu, Stefan Blugel, Roser Valenti, Brian M. Andersen

Abstract: We offer an explanation for the recently observed pressure-induced magnetic state in the iron-chalcogenide FeSe based on \textit{ab initio} estimates for the pressure evolution of the most important Coulomb interaction parameters. We find that an increase of pressure leads to an overall decrease mostly in the nearest-neighbor Coulomb repulsion, which in turn leads to a reduction of the nematic ord… ▽ More We offer an explanation for the recently observed pressure-induced magnetic state in the iron-chalcogenide FeSe based on \textit{ab initio} estimates for the pressure evolution of the most important Coulomb interaction parameters. We find that an increase of pressure leads to an overall decrease mostly in the nearest-neighbor Coulomb repulsion, which in turn leads to a reduction of the nematic order and the generation of magnetic stripe order. We treat the concomitant effects of band renormalization and the induced interplay of nematic and magnetic order in a self-consistent way and determine the generic topology of the temperature-pressure phase diagram, and find qualitative agreement with the experimentally determined phase diagram. △ Less

Submitted 19 December, 2016; originally announced December 2016.

Comments: 13 pages, 6 figs

Report number: NBI CMT 2016

Journal ref: Phys. Rev. B 95, 094504 (2017)

Design of L2_1-type antiferromagnetic semiconducting full-Heusler compounds: A first principles DFT+GW study

Authors: M. Tas, E. Sasioglu, C. Friedrich, S. Blugel, I. Galanakis

Abstract: Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these c… ▽ More Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these compounds G-type antiferromagnetism is the ground state and that they are all either emiconductors (Cr$_2$ScP, Cr$_2$TiZn, V$_2$ScP, V$_2$TiSi, and V$_3$Al) or semimetals (Mn$_2$MgZn and Mn$_2$NaAl). The many-body corrections have a minimal effect on the electronic band structure with respect to the standard electronic structure calculations. △ Less

Submitted 20 January, 2017; v1 submitted 24 November, 2016; originally announced November 2016.

Comments: Journal of Applied Physics, in press

Journal ref: Journal of Applied Physics 121, 053903 (2017)

Correlation effects and orbital magnetism of Co clusters

Authors: L. Peters. I. Di Marco, O. Grånäs, E. Şaşıoğlu, A. Altun, S. Rossen, C. Friedrich, S. Blügel, M. I. Katsnelson, A. Kirilyuk, O. Eriksson

Abstract: Recent experiments on isolated Co clusters have shown huge orbital magnetic moments in comparison with their bulk and surface counterparts. These clusters hence provide the unique possibility to study the evolution of the orbital magnetic moment with respect to the cluster size and how competing interactions contribute to the quenching of orbital magnetism. We investigate here different theoretica… ▽ More Recent experiments on isolated Co clusters have shown huge orbital magnetic moments in comparison with their bulk and surface counterparts. These clusters hence provide the unique possibility to study the evolution of the orbital magnetic moment with respect to the cluster size and how competing interactions contribute to the quenching of orbital magnetism. We investigate here different theoretical methods to calculate the spin and orbital moments of Co clusters, and assess the performances of the methods in comparison with experiments. It is shown that density functional theory in conventional local density or generalized gradient approximations, or even with a hybrid functional, severely underestimates the orbital moment. As natural extensions/corrections we considered the orbital polarization correction, the LDA+U approximation as well as the LDA+DMFT method. Our theory shows that of the considered methods, only the LDA+DMFT method provides orbital moments in agreement with experiment, thus emphasizing the importance of dynamic correlations effects for determining fundamental magnetic properties of magnets in the nano-size regime. △ Less

Submitted 31 May, 2016; originally announced May 2016.

Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles study

Authors: Iosif Galanakis, Saban Tirpanci, Kemal Ozdogan, Ersoy Sasioglu

Abstract: Heusler compounds are widely studied due to their variety of magnetic properties making them ideal candidates for spintronic and magnetoelectronic applications. V$_3$Al in its metastable D0$_3$-type Heusler structure is a prototype for a rare antiferromagnetic gapless behavior. We provide an extensive study on the electronic and magnetic properties of V$_3$Al, V$_3$Ga and V$_3$In compounds based o… ▽ More Heusler compounds are widely studied due to their variety of magnetic properties making them ideal candidates for spintronic and magnetoelectronic applications. V$_3$Al in its metastable D0$_3$-type Heusler structure is a prototype for a rare antiferromagnetic gapless behavior. We provide an extensive study on the electronic and magnetic properties of V$_3$Al, V$_3$Ga and V$_3$In compounds based on state-of-the-art electronic structure calculations. We show that the ground state for all three is a G-type itinerant antiferromagnetic gapless semiconductor. The large antiferromagnetic exchange interactions lead to very high Néel temperatures, which are predicted to be around 1000 K. The coexistence of the gapless and antiferromagnetic behaviors in these compounds can be explained considering the simultaneous presence of three V atoms at the unit cell using arguments which have been employed for usual inverse Heusler compounds. We expect that our study on these compounds to enhance further the interest on them towards the optimization of their growth conditions and their eventual incorporation in devices. △ Less

Submitted 18 April, 2016; originally announced April 2016.

Comments: Submitted to Physical Review B, 8 pages, 9 figures, 1 table

Journal ref: Phys. Rev. B 94, 064401 (2016)

Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

Authors: M. Tas, E. Sasioglu, I. Galanakis, C. Friedrich, S. Blugel

Abstract: Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semicondu… ▽ More Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semiconductors such as Si and GaAs, in these systems the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2~eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the \emph{sp}-chemical element. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. B 93, 195155 (2016)

First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

Authors: A. Jakobsson, P. Mavropoulos, E. Sasioglu, S. Blugel, M. Lezaic, B. Sanyal, I. Galanakis

Abstract: Employing first principles electronic structure calculations in conjunction with the frozen-magnon method we calculate exchange interactions, spin-wave dispersion, and spin-wave stiffness constants in inverse-Heusler-based spin gapless semiconductor (SGS) compounds Mn$_2$CoAl, Ti$_2$MnAl, Cr$_2$ZnSi, Ti$_2$CoSi and Ti$_2$VAs. We find that their magnetic behavior is similar to the half-metallic fer… ▽ More Employing first principles electronic structure calculations in conjunction with the frozen-magnon method we calculate exchange interactions, spin-wave dispersion, and spin-wave stiffness constants in inverse-Heusler-based spin gapless semiconductor (SGS) compounds Mn$_2$CoAl, Ti$_2$MnAl, Cr$_2$ZnSi, Ti$_2$CoSi and Ti$_2$VAs. We find that their magnetic behavior is similar to the half-metallic ferromagnetic full-Heusler alloys, i.e., the intersublattice exchange interactions play an essential role in the formation of the magnetic ground state and in determining the Curie temperature, $T_\mathrm{c}$. All compounds, except Ti$_2$CoSi possess a ferrimagnetic ground state. Due to the finite energy gap in one spin channel, the exchange interactions decay sharply with the distance, and hence magnetism of these SGSs can be described considering only nearest and next-nearest neighbor exchange interactions. The calculated spin-wave dispersion curves are typical for ferrimagnets and ferromagnets. The spin-wave stiffness constants turn out to be larger than those of the elementary 3$d$-ferromagnets. Calculated exchange parameters are used as input to determine the temperature dependence of the magnetization and $T_\mathrm{c}$ of the SGSs. We find that the $T_\mathrm{c}$ of all compounds is much above the room temperature. The calculated magnetization curve for Mn$_2$CoAl as well as the Curie temperature are in very good agreement with available experimental data. The present study is expected to pave the way for a deeper understanding of the magnetic properties of the inverse-Heusler-based SGSs and enhance the interest in these materials for application in spintronic and magnetoelectronic devices. △ Less

Submitted 14 May, 2015; originally announced May 2015.

Comments: Accepted for publ;ication in Physical Review B

Wannier Function Approach to Realistic Coulomb Interactions in Layered Materials and Heterostructures

Authors: M. Rösner, E. Şaşıoğlu, C. Friedrich, S. Blügel, T. O. Wehling

Abstract: We introduce an approach to derive realistic Coulomb interaction terms in free standing layered materials and vertical heterostructures from ab-initio modelling of the corresponding bulk materials. To this end, we establish a combination of calculations within the framework of the constrained random phase approximation, Wannier function representation of Coulomb matrix elements within some low ene… ▽ More We introduce an approach to derive realistic Coulomb interaction terms in free standing layered materials and vertical heterostructures from ab-initio modelling of the corresponding bulk materials. To this end, we establish a combination of calculations within the framework of the constrained random phase approximation, Wannier function representation of Coulomb matrix elements within some low energy Hilbert space and continuum medium electrostatics, which we call Wannier function continuum electrostatics (WFCE). For monolayer and bilayer graphene we reproduce full ab-initio calculations of the Coulomb matrix elements within an accuracy of $0.2$eV or better. We show that realistic Coulomb interactions in bilayer graphene can be manipulated on the eV scale by different dielectric and metallic environments. A comparison to electronic phase diagrams derived in [M. M. Scherer et al., Phys. Rev. B 85, 235408 (2012)] suggests that the electronic ground state of bilayer graphene is a layered antiferromagnet and remains surprisingly unaffected by these strong changes in the Coulomb interaction. △ Less

Submitted 20 April, 2015; originally announced April 2015.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 92, 085102 (2015)

NiS - An unusual self-doped, nearly compensated antiferromagnetic metal

Authors: S. K. Panda, I. Dasgupta, E. Sasioglu, S. Blugel, D. D. Sarma

Abstract: NiS, exhibiting a text-book example of a first-order transition with many unusual properties at low temperatures, has been variously described in terms of conflicting descriptions of its ground state during the past several decades. We calculate these physical properties within first-principle approaches based on the density functional theory and conclusively establish that all experimental data c… ▽ More NiS, exhibiting a text-book example of a first-order transition with many unusual properties at low temperatures, has been variously described in terms of conflicting descriptions of its ground state during the past several decades. We calculate these physical properties within first-principle approaches based on the density functional theory and conclusively establish that all experimental data can be understood in terms of a rather unusual ground state of NiS that is best described as a self-doped, nearly compensated, antiferromagnetic metal, resolving the age-old controversy. We trace the origin of this novel ground state to the specific details of the crystal structure, band dispersions and a sizable Coulomb interaction strength that is still sub-critical to drive the system in to an insulating state. We also show how the specific antiferromagnetic structure is a consequence of the less-discussed 90 degree and less than 90 degree superexchange interactions built in to such crystal structures. △ Less

Submitted 28 November, 2013; originally announced November 2013.

Journal ref: Scientific Reports 3, 2995 (2013)

Ab-initio calculation of the effective on-site Coulomb interaction parameters for half-metallic magnets

Authors: Ersoy Sasioglu, Iosif Galanakis, Christoph Friedrich, Stefan Blügel

Abstract: Correlation effects play an important role in the electronic structure of half-metallic (HM) magnets. In particular, they give rise to non-quasiparticle states above (or below) the Fermi energy at finite temperatures that reduce the spin polarization and, as a consequence, the efficiency of spintronics devices. Employing the constrained random-phase approximation (cRPA) within the full-potential l… ▽ More Correlation effects play an important role in the electronic structure of half-metallic (HM) magnets. In particular, they give rise to non-quasiparticle states above (or below) the Fermi energy at finite temperatures that reduce the spin polarization and, as a consequence, the efficiency of spintronics devices. Employing the constrained random-phase approximation (cRPA) within the full-potential linearized augmented-plane-wave (FLAPW) method using maximally localized Wannier functions, we calculate the strength of the effective on-site Coulomb interaction (Hubbard $U$ and Hund exchange $J$) between localized electrons in different classes of HM magnets considering: (i) \emph{sp}-electron ferromagnets in rock-salt structure, (ii) zincblende 3\emph{d} binary ferromagnets, as well as (iii) ferromagnetic and ferrimagnetic semi- and full-Heusler compounds. △ Less

Submitted 25 September, 2013; originally announced September 2013.

Comments: 11 pages, 3 figures, 4 tables; accepted for publication in Phys Rev B

Journal ref: Phys. Rev. B 88, 134402 (2013)

Tuning the Curie temperature of FeCo compounds by tetragonal distortion

Authors: A. Jakobsson, E. Sasioglu, Ph. Mavropoulos, M. Lezaic, B. Sanyal, G. Bihlmayer, S. Blügel

Abstract: Combining density-functional theory calculations with a classical Monte Carlo method, we show that for B2-type FeCo compounds tetragonal distortion gives rise to a strong reduction of the Curie temperature $T_{\mathrm{C}}$. The $T_{\mathrm{C}}$ monotonically decreases from 1575 K (for $c/a=1$) to 940 K (for $c/a=\sqrtwo$). We find that the nearest neighbor Fe-Co exchange interaction is sufficient… ▽ More Combining density-functional theory calculations with a classical Monte Carlo method, we show that for B2-type FeCo compounds tetragonal distortion gives rise to a strong reduction of the Curie temperature $T_{\mathrm{C}}$. The $T_{\mathrm{C}}$ monotonically decreases from 1575 K (for $c/a=1$) to 940 K (for $c/a=\sqrtwo$). We find that the nearest neighbor Fe-Co exchange interaction is sufficient to explain the $c/a$ behavior of the $T_{\mathrm{C}}$. Combination of high magnetocrystalline anisotropy energy with a moderate $T_{\mathrm{C}}$ value suggests tetragonal FeCo grown on the Rh substrate with $c/a=1.24$ to be a promising material for heat-assisted magnetic recording applications. △ Less

Submitted 17 September, 2013; originally announced September 2013.

Comments: 4 pages, 2 figures

Journal ref: Appl. Phys. Lett. 103, 102404 (2013)

Effect of Local Electron-Electron Correlation in Hydrogen-like Impurities in Ge

Authors: H. Sims, E. R. Ylvisaker, E. Şaşıoğlu, C. Friedrich, S. Blügel, W. E. Pickett

Abstract: We have studied the electronic and local magnetic structure of the hydrogen interstitial impurity at the tetrahedral site in diamond-structure Ge, using an empirical tight binding + dynamical mean field theory approach because within the local density approximation (LDA) Ge has no gap. We first establish that within LDA the 1s spectral density bifurcates due to entanglement with the four neighbori… ▽ More We have studied the electronic and local magnetic structure of the hydrogen interstitial impurity at the tetrahedral site in diamond-structure Ge, using an empirical tight binding + dynamical mean field theory approach because within the local density approximation (LDA) Ge has no gap. We first establish that within LDA the 1s spectral density bifurcates due to entanglement with the four neighboring sp3 antibonding orbitals, providing an unanticipated richness of behavior in determining under what conditions a local moment hyperdeep donor or Anderson impurity will result, or on the other hand a gap state might appear. Using a supercell approach, we show that the spectrum, the occupation, and the local moment of the impurity state displays a strong dependence on the strength of the local on-site Coulomb interaction U, the H-Ge hopping amplitude, the depth of the bare 1s energy level epsilon_H, and we address to some extent the impurity concentration dependence. In the isolated impurity, strong interaction regime a local moment emerges over most of the parameter ranges indicating magnetic activity, and spectral density structure very near (or in) the gap suggests possible electrical activity in this regime. △ Less

Submitted 24 May, 2013; originally announced May 2013.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 87, 195120 (2013)

Strong magnon softening in tetragonal FeCo compounds

Authors: Ersoy Sasioglu, Christoph Friedrich, Stefan Blügel

Abstract: Magnons play an important role in fast precessional magnetization reversal processes serving as a heat bath for dissipation of the Zeeman energy and thus being responsible for the relaxation of magnetization. Employing \emph{ab initio} many-body perturbation theory we studied the magnon spectra of the tetragonal FeCo compounds considering three different experimental $c/a$ ratios, $c/a=$1.13, 1.18… ▽ More Magnons play an important role in fast precessional magnetization reversal processes serving as a heat bath for dissipation of the Zeeman energy and thus being responsible for the relaxation of magnetization. Employing \emph{ab initio} many-body perturbation theory we studied the magnon spectra of the tetragonal FeCo compounds considering three different experimental $c/a$ ratios, $c/a=$1.13, 1.18, and 1.24 corresponding to FeCo grown on Pd, Ir, and Rh, respectively. We find that for all three cases the short-wave-length magnons are strongly damped and tetragonal distortion gives rise to a significant magnon softening. The magnon stiffness constant $D$ decreases almost by a factor of two from FeCo/Pd to FeCo/Rh. The combination of soft magnons together with the giant magnetic anisotropy energy suggests FeCo/Rh to be a promising material for perpendicular magnetic recording applications. △ Less

Submitted 26 April, 2013; originally announced April 2013.

Comments: 5 pages, 2 figures, 1 table

Journal ref: Phys. Rev. B 87, 020410(R) (2013)

Theoretical investigation into the possibility of very large moments in Fe16N2

Authors: H. Sims, W. H. Butler, M. Richter, K. Koepernik, E. Sasioglu, C. Friedrich, S. Blügel

Abstract: We examine the mystery of the disputed high-magnetization α"-Fe16N2 phase, employing the Heyd-Scuseria-Ernzerhof screened hybrid functional method, perturbative many-body corrections through the GW approximation, and onsite Coulomb correlations through the GGA+U method. We present a first-principles computation of the effective on-site Coulomb interaction (Hubbard U) between localized 3d electrons… ▽ More We examine the mystery of the disputed high-magnetization α"-Fe16N2 phase, employing the Heyd-Scuseria-Ernzerhof screened hybrid functional method, perturbative many-body corrections through the GW approximation, and onsite Coulomb correlations through the GGA+U method. We present a first-principles computation of the effective on-site Coulomb interaction (Hubbard U) between localized 3d electrons employing the constrained random-phase approximation (cRPA), finding only somewhat stronger on-site correlations than in bcc Fe. We find that the hybrid functional method, the GW approximation, and the GGA+U method (using parameters computed from cRPA) yield an average spin moment of 2.9, 2.6 - 2.7, and 2.7 μ_B per Fe, respectively. △ Less

Submitted 5 November, 2012; originally announced November 2012.

Comments: 8 pages, 3 figures

Strength of the Effective Coulomb Interaction at Metal and Insulator Surfaces

Authors: Ersoy Sasioglu, Christoph Friedrich, Stefan Blügel

Abstract: The effective on-site Coulomb interaction (Hubbard $U$) between localized electrons at crystal surfaces is expected to be enhanced due to the reduced coordination number and reduced subsequent screening. By means of first principles calculations employing the constrained random-phase approximation (cRPA) we show that this is indeed the case for simple metals and insulators but not necessarily for… ▽ More The effective on-site Coulomb interaction (Hubbard $U$) between localized electrons at crystal surfaces is expected to be enhanced due to the reduced coordination number and reduced subsequent screening. By means of first principles calculations employing the constrained random-phase approximation (cRPA) we show that this is indeed the case for simple metals and insulators but not necessarily for transition metals and insulators that exhibit pronounced surface states. In the latter case, the screening contribution from surface states as well as the influence of the band narrowing increases the electron polarization to such an extent as to overcompensate the decrease resulting from the reduced effective screening volume. The Hubbard $U$ parameter is thus substantially reduced in some cases, e.g., by around 30% for the (100) surface of bcc Cr. △ Less

Submitted 22 October, 2012; originally announced October 2012.

Comments: 4.4 pages, 3 figures, 1 table

Journal ref: Phys. Rev. Lett. 109, 146401 (2012)

Generalized Slater-Pauling rule for the inverse Heusler compounds

Authors: S. Skaftouros, K. Ozdogan, E. Sasioglu, I. Galanakis

Abstract: We present extensive first-principles calculations on the inverse full-Heusler compounds having the chemical formula X$_2$YZ where (X = Sc, Ti, V, Cr or Mn), (Z = Al, Si or As) and the Y ranges from Ti to Zn. Several of these alloys are identified to be half-metallic magnets. We show that the appearance of half-metallicity is associated in all cases to a Slater-Pauling behavior of the total spin-m… ▽ More We present extensive first-principles calculations on the inverse full-Heusler compounds having the chemical formula X$_2$YZ where (X = Sc, Ti, V, Cr or Mn), (Z = Al, Si or As) and the Y ranges from Ti to Zn. Several of these alloys are identified to be half-metallic magnets. We show that the appearance of half-metallicity is associated in all cases to a Slater-Pauling behavior of the total spin-magnetic moment. There are three different variants of this rule for the inverse Heusler alloys depending on the chemical type of the constituent transition-metal atoms. Simple arguments regarding the hybridization of the d-orbitals of neighboring atoms can explain these rules. We expect our results to trigger further experimental interest on this type of half-metallic Heusler compounds. △ Less

Submitted 22 October, 2012; originally announced October 2012.

Comments: 5 pages, 3 figures, 1 table

Journal ref: Physical Review B 87, 024420 (2013)

Search for spin gapless semiconductors: The case of inverse Heusler compounds

Authors: S. Skaftouros, K. Ozdogan, E. Sasioglu, I. Galanakis

Abstract: We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-u… ▽ More We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications. △ Less

Submitted 19 October, 2012; originally announced October 2012.

Comments: Submitted to Applied Physics Letters

Journal ref: Applied Physics Letters 102 , 022402 (2013)

Robustness and stability of half-metallic ferromagnetism in alkaline-earth metal mononitrides against doping and deformation

Authors: K. Ozdogan, E. Sasioglu, I. Galanakis

Abstract: We employ ab-initio electronic structure calculations and study the magnetic properties of CaN and SrN compounds crystallizing in the rocksalt structure. These alkaline-earth metal mononitrides are found to be half-metallic with a total spin magnetic moment per formula unit of 1.0 $μ_B$. The Curie temperature is estimated to be 480 K for CaN and 415 K for SrN well-above the room temperature. Upon… ▽ More We employ ab-initio electronic structure calculations and study the magnetic properties of CaN and SrN compounds crystallizing in the rocksalt structure. These alkaline-earth metal mononitrides are found to be half-metallic with a total spin magnetic moment per formula unit of 1.0 $μ_B$. The Curie temperature is estimated to be 480 K for CaN and 415 K for SrN well-above the room temperature. Upon small degrees of doping with holes or electrons, the rigid-band model suggests that the magnetic properties are little affected. Finally we studied for these alloys the effect of deformation taking into account tetragonalization keeping constant the unit cell volume which models the growth on various substrates. Even large degrees of deformation only marginally affect the electronic and magnetic properties of CaN and SrN in the rocksalt structure. Finally, we show that this stands also for the zincblende structure. Our results suggest that alkaline-earth metal mononitrides are promising materials for magnetoelectronic applications. △ Less

Submitted 20 April, 2012; v1 submitted 6 March, 2012; originally announced March 2012.

Comments: REVISED VERSION, 7 pages, 3 figures, 2 tables

Journal ref: Journal of Applied Physics 111, 113918 (2012)

Ab-initio calculation of effective exchange interactions, spin waves, and Curie temperature in L2_1- and L1_2-type local moment ferromagnets

Authors: I. Galanakis, E. Sasioglu

Abstract: Employing first-principles electronic structure calculations in conjunction with the frozen-magnon method we study the effective exchange interactions and spin waves in local moment ferromagnets. As prototypes we have chosen three L2$_1$-type full Heusler alloys Cu$_2$MnAl, Ni$_2$MnSn and Pd$_2$MnSn, and the L1$_2$-type XPt$_3$ compounds with X= V, Cr and Mn. We have also included CoPt$_3$ which i… ▽ More Employing first-principles electronic structure calculations in conjunction with the frozen-magnon method we study the effective exchange interactions and spin waves in local moment ferromagnets. As prototypes we have chosen three L2$_1$-type full Heusler alloys Cu$_2$MnAl, Ni$_2$MnSn and Pd$_2$MnSn, and the L1$_2$-type XPt$_3$ compounds with X= V, Cr and Mn. We have also included CoPt$_3$ which is a usual ferromagnet. In all compounds due to the large spatial separation ($\sim 4$ Å) of the magnetic transition metal atoms, the 3\textit{d} states belonging to different atoms overlap weakly and as a consequence the exchange coupling is indirect, mediated by the \textit{sp} electrons. Calculated effective exchange parameters are long range and show RKKY-type oscillations. The spin-wave dispersion curves are in reasonable agreement with available experimental data. Using the calculated exchange parameters we have estimated the Curie temperatures within both the mean-field and the random-phase approximations. In local moment ferromagents deviations of the estimated Curie temperature with respect to the available experimental data occur when the ground-state electronic structure calculations overestimate the values of the spin magnetic moments as in VPt$_3$. △ Less

Submitted 10 October, 2011; originally announced October 2011.

Comments: Submitted for a Special Issue of Journal of Materials Science entitled "Recent Advances in First Principles Computations in Materials Research "

Journal ref: Journal of Materials Science 47, 7678 (2012)

First-principles calculation of electronic excitations in solids with SPEX

Authors: Arno Schindlmayr, Christoph Friedrich, Ersoy Sasioglu, Stefan Blügel

Abstract: We describe the software package SPEX, which allows first-principles calculations of quasiparticle and collective electronic excitations in solids using techniques from many-body perturbation theory. The implementation is based on the full-potential linearized augmented-plane-wave (FLAPW) method, which treats core and valence electrons on an equal footing and can be applied to a wide range of mate… ▽ More We describe the software package SPEX, which allows first-principles calculations of quasiparticle and collective electronic excitations in solids using techniques from many-body perturbation theory. The implementation is based on the full-potential linearized augmented-plane-wave (FLAPW) method, which treats core and valence electrons on an equal footing and can be applied to a wide range of materials, including transition metals and rare earths. After a discussion of essential features that contribute to the high numerical efficiency of the code, we present illustrative results for quasiparticle band structures calculated within the GW approximation for the electronic self-energy, electron-energy-loss spectra with inter- and intraband transitions as well as local-field effects, and spin-wave spectra of itinerant ferromagnets. In all cases the inclusion of many-body correlation terms leads to very good quantitative agreement with experimental spectroscopies. △ Less

Submitted 7 October, 2011; originally announced October 2011.

Comments: 12 pages including 6 figures

Journal ref: Z. Phys. Chem. 224, 357 (2010)

Effective Coulomb interaction in transition metals from constrained random-phase approximation

Authors: Ersoy Sasioglu, Christoph Friedrich, Stefan Blügel

Abstract: The effective on-site Coulomb interaction (Hubbard $U$) between localized \textit{d} electrons in 3\textit{d}, 4\textit{d}, and 5\textit{d} transition metals is calculated employing a new parameter-free realization of the constrained random-phase approximation using Wannier functions within the full-potential linearized augmented-plane-wave method. The $U$ values lie between 1.5 and 5.7 eV and dep… ▽ More The effective on-site Coulomb interaction (Hubbard $U$) between localized \textit{d} electrons in 3\textit{d}, 4\textit{d}, and 5\textit{d} transition metals is calculated employing a new parameter-free realization of the constrained random-phase approximation using Wannier functions within the full-potential linearized augmented-plane-wave method. The $U$ values lie between 1.5 and 5.7 eV and depend on the crystal structure, spin polarization, \textit{d} electron number, and \textit{d} orbital filling. On the basis of the calculated $U$ parameters, we discuss the strength of the electronic correlations and the instability of the paramagnetic state towards the ferromagnetic one for 3\textit{d} metals. △ Less

Submitted 29 March, 2011; originally announced March 2011.

Comments: 4 pages

Journal ref: Phys. Rev. B 83, 121101(R) (2011)

Strength of effective Coulomb interactions in graphene and graphite

Authors: T. O. Wehling, E. Sasioglu, C. Friedrich, A. I. Lichtenstein, M. I. Katsnelson, S. Blügel

Abstract: To obtain an effective many-body model of graphene and related materials from first principles we calculate the partially screened frequency dependent Coulomb interaction. In graphene, the effective on-site (Hubbard) interaction is U_00 = 9.3 eV in close vicinity to the critical value separating conducting graphene from an insulating phase emphasizing the importance of non-local Coulomb terms. The… ▽ More To obtain an effective many-body model of graphene and related materials from first principles we calculate the partially screened frequency dependent Coulomb interaction. In graphene, the effective on-site (Hubbard) interaction is U_00 = 9.3 eV in close vicinity to the critical value separating conducting graphene from an insulating phase emphasizing the importance of non-local Coulomb terms. The nearest-neighbor Coulomb interaction strength is computed to U_01 = 5.5 eV. In the long wavelength limit, we find the effective background dielectric constant of graphite to be ε= 2.5 in very good agreement with experiment. △ Less

Submitted 9 June, 2011; v1 submitted 20 January, 2011; originally announced January 2011.

Comments: 4 pages, 3 figures (revised version)

Journal ref: Phys. Rev. Lett. 106, 236805 (2011)

Wannier-function approach to spin excitations in solids

Authors: Ersoy Sasioglu, Arno Schindlmayr, Christoph Friedrich, Frank Freimuth, Stefan Blügel

Abstract: We present a computational scheme to study spin excitations in magnetic materials from first principles. The central quantity is the transverse spin susceptibility, from which the complete excitation spectrum, including single-particle spin-flip Stoner excitations and collective spin-wave modes, can be obtained. The susceptibility is derived from many-body perturbation theory and includes dynami… ▽ More We present a computational scheme to study spin excitations in magnetic materials from first principles. The central quantity is the transverse spin susceptibility, from which the complete excitation spectrum, including single-particle spin-flip Stoner excitations and collective spin-wave modes, can be obtained. The susceptibility is derived from many-body perturbation theory and includes dynamic correlation through a summation over ladder diagrams that describe the coupling of electrons and holes with opposite spins. In contrast to earlier studies, we do not use a model potential with adjustable parameters for the electron-hole interaction but employ the random-phase approximation. To reduce the numerical cost for the calculation of the four-point scattering matrix we perform a projection onto maximally localized Wannier functions, which allows us to truncate the matrix efficiently by exploiting the short spatial range of electronic correlation in the partially filled d or f orbitals. Our implementation is based on the FLAPW method. Starting from a ground-state calculation within the LSDA, we first analyze the matrix elements of the screened Coulomb potential in the Wannier basis for the 3d transition-metal series. In particular, we discuss the differences between a constrained nonmagnetic and a proper spin-polarized treatment for the ferromagnets Fe, Co, and Ni. The spectrum of single-particle and collective spin excitations in fcc Ni is then studied in detail. The calculated spin-wave dispersion is in good overall agreement with experimental data and contains both an acoustic and an optical branch for intermediate wave vectors along the [100] direction. In addition, we find evidence for a similar double-peak structure in the spectral function along the [111] direction. △ Less

Submitted 25 February, 2010; originally announced February 2010.

Comments: 16 pages, 11 figures, 5 tables

Journal ref: Phys. Rev. B 81, 054434 (2010)

Nonzero macroscopic magnetization in half-metallic antiferromagnets at finite temperatures

Authors: Ersoy Sasioglu

Abstract: Combining density-functional theory calculations with many-body Green's-function technique, we reveal that the macroscopic magnetization in half-metallic antiferromagnets does not vanish at finite temperature as for the T=0 limit. This anomalous behavior stems from the inequivalent magnetic sublattices which lead to different intrasublattice exchange interactions. As a consequence, the spin fluc… ▽ More Combining density-functional theory calculations with many-body Green's-function technique, we reveal that the macroscopic magnetization in half-metallic antiferromagnets does not vanish at finite temperature as for the T=0 limit. This anomalous behavior stems from the inequivalent magnetic sublattices which lead to different intrasublattice exchange interactions. As a consequence, the spin fluctuations suppress the magnetic order of the sublattices in a different way leading to a ferrimagnetic state at finite temperatures. Computational results are presented for the half-metallic antiferromagnetic CrMnZ (Z=P,As,Sb) semi-Heusler compounds. △ Less

Submitted 20 August, 2009; originally announced August 2009.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. B 79, 100406(R) (2009)

Critical behavior of density of states near Fermi energy in low-dimensional disordered metals

Authors: E. Sasioglu, S. Caliskan, M. Kumru

Abstract: We study the effect of electron-electron interaction on the one-particle density of states (\emph{DOS}) $ρ^{(d)}(ε,T)$ of low-dimensional disordered metals near Fermi energy within the framework of the finite temperature conventional impurity diagram technique. We consider only diffusive limit and by a geometric re-summation of the most singular first order self-energy corrections via the Dyson… ▽ More We study the effect of electron-electron interaction on the one-particle density of states (\emph{DOS}) $ρ^{(d)}(ε,T)$ of low-dimensional disordered metals near Fermi energy within the framework of the finite temperature conventional impurity diagram technique. We consider only diffusive limit and by a geometric re-summation of the most singular first order self-energy corrections via the Dyson equation we obtain a non-divergent solution for the \emph{DOS} at low energies, while for higher energies the well-known Altshuler-Aronov corrections are recovered. At the Fermi level $ρ^{(d)}(ε,T=0)\to 0$, this indicates that interacting disordered two- and quasi-one-dimensional systems are in insulating state at zero temperature. The obtained results are in good agreement with recent tunneling experiments on two-dimensional GaAs/AlGaAs heterostructures and quasi-one-dimensional doped multiwall carbon nanotubes. △ Less

Submitted 20 August, 2009; originally announced August 2009.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. B 79, 035123 (2009)

Half-metallic ferrimagnetism in the [Sc$_{1-x}$V$_x$]C and [Sc$_{1-x} $V$_x$]Si alloys adopting the zinc-blende and wurtzite structures from first-principles

Authors: K. Ozdogan, E. Sasioglu, I. Galanakis

Abstract: Employing first-principles calculations we study the structural, electronic and magnetic properties of the [Sc$_{1-x}$V$_x$]C and [Sc$_{1-x}$V$_x$]Si alloys. In their equilibrium rocksalt structure all alloys are non-magnetic. The zincblende and wurtzite structures are degenerated with respect to the total energy. For all concentrations the alloys in these lattice structures are half-metallic wi… ▽ More Employing first-principles calculations we study the structural, electronic and magnetic properties of the [Sc$_{1-x}$V$_x$]C and [Sc$_{1-x}$V$_x$]Si alloys. In their equilibrium rocksalt structure all alloys are non-magnetic. The zincblende and wurtzite structures are degenerated with respect to the total energy. For all concentrations the alloys in these lattice structures are half-metallic with the gap located in the spin-down band. The total spin moment follows the Slater-Pauling behavior varying linearly between the -1 $μ_B$ of the perfect ScC and ScSi alloys and the +1 $μ_B$ of the perfect VC and VSi alloys. For the intermediate concentrations V and Sc atoms have antiparallel spin magnetic moments and the compounds are half-metallic ferrimagnets. At the critical concentration, both [Sc$_{0.5}$V$_{0.5}$]C and [Sc$_{0.5}$V$_{0.5}$]Si alloys present zero total spin-magnetic moment but the C-based alloy shows a semiconducting behavior contrary to the Si-based alloys which is a half-metallic antiferromagnet. △ Less

Submitted 13 March, 2009; originally announced March 2009.

Journal ref: Journal of Magnetism and Magnetic Materials 322, 46 (2010)

Tuning the magnetic properties of half-metallic semi-Heusler alloys by sp-electron substitution: The case of AuMnSn$_{1-x}$Sb$_x$ quaternary alloys

Authors: K. Ozdogan, I. Galanakis, E. Sasioglu

Abstract: We study the electronic and magnetic properties of the quaternary AuMnSn$_{1-x}$Sb$_{x}$ Heusler alloys using first principles calculations. We determine their magnetic phase diagram and we show that they present a phase transition from a ferromagnetic to an antiferromagnetic state with increasing Sb concentration. For large Sb concentrations the antiferromagnetic superexchange coupling dominate… ▽ More We study the electronic and magnetic properties of the quaternary AuMnSn$_{1-x}$Sb$_{x}$ Heusler alloys using first principles calculations. We determine their magnetic phase diagram and we show that they present a phase transition from a ferromagnetic to an antiferromagnetic state with increasing Sb concentration. For large Sb concentrations the antiferromagnetic superexchange coupling dominates over the ferromagnetic RKKY-like exchange mechanism. This behavior is similar to the one demonstrated by the isovalent Ni$_{1-x}$Cu$_x$MnSb alloy studied recently by the authors [I. Galanakis et al, Phys. Rev. B. \textbf{77}, 214417 (2008)]. Thus the variation of the concentration of the \textit{sp}-electrons (Sn and Sb atoms) and the variation of the concentration of the non-magnetic \textit{3d} atoms (Cu) lead to a similar tuning of the the magnetic properties of the Heusler alloys. We show that the inclusion of correlation effects does not alter the phase diagram. Calculated results are in good agreement with the available experimental data. △ Less

Submitted 10 November, 2008; originally announced November 2008.

Journal ref: Journal of Physics D: Applied Physics 42, 085003 (2009)

Ab-initio determined electronic and magnetic properties of half-metallic NiCrSi and NiMnSi Heusler alloys; the role of interfaces and defects

Authors: I. Galanakis, K. Ozdogan, E. Sasioglu

Abstract: Using state-of-the-art first-principles calculations we study the properties of the ferromagnetic Heusler compounds NiYSi where Y stands for V, Cr or Mn. NiCrSi and NiMnSi contrary to NiVSi are half-metallic at their equilibrium lattice constant exhibiting integer values of the total spin magnetic moment and thus we concentrate on these two alloys. The minority-spin gap has the same characterist… ▽ More Using state-of-the-art first-principles calculations we study the properties of the ferromagnetic Heusler compounds NiYSi where Y stands for V, Cr or Mn. NiCrSi and NiMnSi contrary to NiVSi are half-metallic at their equilibrium lattice constant exhibiting integer values of the total spin magnetic moment and thus we concentrate on these two alloys. The minority-spin gap has the same characteristics as for the well-known NiMnSb alloy being around $\sim$1 eV. Upon tetragonalization the gap is present in the density of states even for expansion or contraction of the out-of-plane lattice parameter by 5%. The Cr-Cr and Mn-Mn interactions make ferromagnetism extremely stable and the Curie temperature exceeds 1000 K for NiMnSi. Surface and interfaces with GaP, ZnS and Si semiconductors are not half-metallic but in the case of NiCrSi the Ni-based contacts present spin-polarization at the Fermi level over 90%. Finally, we show that there are two cases of defects and atomic-swaps. The first-ones which involve the Cr(Mn) and Si atoms induce states at the edges of the gap which persists for a moderate-concentration of defects. Defects involving Ni atoms induce states localized within the gap completely destroying the half-metallicity. Based on single-impurity calculations we associate these states to the symmetry of the crystal. △ Less

Submitted 18 February, 2008; originally announced February 2008.

Journal ref: Journal of Applied Physics 104, 083916 (2008)

Fundamentals of half-metallic Full-Heusler alloys

Authors: K. Ozdogan, E. Sasioglu, I. Galanakis

Abstract: Intermetallic Heusler alloys are amongst the most attractive half-metallic systems due to the high Curie temperatures and the structural similarity to the binary semiconductors. In this review we present an overview of the basic electronic and magnetic properties of the half-metallic full-Heusler alloys like Co$_2$MnGe. Ab-initio results suggest that the electronic and magnetic properties in the… ▽ More Intermetallic Heusler alloys are amongst the most attractive half-metallic systems due to the high Curie temperatures and the structural similarity to the binary semiconductors. In this review we present an overview of the basic electronic and magnetic properties of the half-metallic full-Heusler alloys like Co$_2$MnGe. Ab-initio results suggest that the electronic and magnetic properties in these compounds are intrinsically related to the appearance of the minority-spin gap. The total spin magnetic moment in the unit cell, $M_t$, scales linearly with the number of the valence electrons, $Z_t$, such that $M_t=Z_t-24$ for the full-Heusler alloys opening the way to engineer new half-metallic alloys with the desired magnetic properties. Moreover we present analytical results on the disorder in Co$_2$Cr(Mn)Al(Si) alloys, which is susceptible to destroy the perfect half-metallicity of the bulk compounds and thus degrade the performance of devices. Finally we discuss the appearance of the half-metallic ferrimagnetism due to the creation of Cr(Mn) antisites in these compounds and the Co-doping in Mn$_2$VAl(Si) alloys which leads to the fully-compensated half-metallic ferrimagnetism. △ Less

Submitted 15 January, 2008; originally announced January 2008.

Comments: Submitted for a book entitled "Spintronics: Materials, Applications and Devices" to be published by Nova Publishers

3d-electron induced magnetic phase transition in half-metallic semi-Heusler alloys

Authors: I. Galanakis, E. Sasioglu, K. Ozdogan

Abstract: We study the effect of the non-magnetic 3\textit{d} atoms on the magnetic properties of the half-metallic (HM) semi-Heusler alloys Co$_{1-x}$Cu$_{x}$MnSb and Ni$_{1-x}$Cu$_{x}$MnSb ($0 \leq x \leq 1$) using first-principles calculations. We determine the magnetic phase diagram of both systems at zero temperature and obtain a phase transition from a ferromagnetic to an antiferromagnetic state. Fo… ▽ More We study the effect of the non-magnetic 3\textit{d} atoms on the magnetic properties of the half-metallic (HM) semi-Heusler alloys Co$_{1-x}$Cu$_{x}$MnSb and Ni$_{1-x}$Cu$_{x}$MnSb ($0 \leq x \leq 1$) using first-principles calculations. We determine the magnetic phase diagram of both systems at zero temperature and obtain a phase transition from a ferromagnetic to an antiferromagnetic state. For low Cu concentrations the ferromagnetic RKKY-like exchange mechanism is dominating, while the antiferromagnetic superexchange coupling becomes important for larger Cu content leading to the observed magnetic phase transition. A strong dependence of the magnetism in both systems on the position of the Fermi level within the HM gap is obtained. Obtained results are in good agreement with the available experimental data. △ Less

Submitted 13 January, 2008; originally announced January 2008.

Journal ref: Physical Review B 77, 214417 (2008)

Role of the conduction electrons in mediating exchange interactions in Heusler alloys

Authors: E. Sasioglu, L. M. Sandratskii, P. Bruno

Abstract: Because of large spatial separation of the Mn atoms in Heusler alloys the Mn 3d states belonging to different atoms do not overlap considerably. Therefore an indirect exchange interaction between Mn atoms should play a crucial role in the ferromagnetism of the systems. To study the nature of the ferromagnetism of various Mn-based semi- and full-Heusler alloys we perform a systematic first-princi… ▽ More Because of large spatial separation of the Mn atoms in Heusler alloys the Mn 3d states belonging to different atoms do not overlap considerably. Therefore an indirect exchange interaction between Mn atoms should play a crucial role in the ferromagnetism of the systems. To study the nature of the ferromagnetism of various Mn-based semi- and full-Heusler alloys we perform a systematic first-principles calculation of the exchange interactions in these materials. The calculation of the exchange parameters is based on the frozen-magnon approach. The calculations show that the magnetism of the Mn-based Heusler alloys depends strongly on the number of conduction electrons, their spin polarization and the position of the unoccupied Mn 3d states with respect to the Fermi level. Various magnetic phases are obtained depending on the combination of these characteristics. The Anderson's s-d model is used to perform a qualitative analysis of the obtained results. The conditions leading to diverse magnetic behavior are identified. If the spin polarization of the conduction electrons at the Fermi energy is large and the unoccupied Mn 3d states lie well above the Fermi level, an RKKY-type ferromagnetic interaction is dominating. On the other hand, the contribution of the antiferromagnetic superexchange becomes important if unoccupied Mn 3d states lie close to the Fermi energy. The resulting magnetic behavior depends on the competition of these two exchange mechanisms. The calculational results are in good correlation with the conclusions made on the basis of the Anderson s-d model which provides useful framework for the analysis of the results of first-principles calculations and helps to formulate the conditions for high Curie temperature. △ Less

Submitted 2 December, 2007; originally announced December 2007.

Comments: 16 pages, 9 figures, 2 tables

Journal ref: Phys. Rev. B 77, 064417 (2008)