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Engineering the electronic and magnetic properties of monolayer TiS$_2$ through systematic transition-metal doping
Authors:
Sara Asadi Toularoud,
Hanif Hadipour,
Hamid Rahimpour Soleimani
Abstract:
Layered materials that exhibit magnetic ordering in their pristine form are very rare. Several standard approaches, such as adsorption of atoms, introduction of point defects, and edge engineering, have been developed to induce magnetism in two-dimensional materials. In this way, we investigate the electronic and magnetic properties of monolayer TiS$_2$ doped with 3$d$ transition metals (TMs) atom…
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Layered materials that exhibit magnetic ordering in their pristine form are very rare. Several standard approaches, such as adsorption of atoms, introduction of point defects, and edge engineering, have been developed to induce magnetism in two-dimensional materials. In this way, we investigate the electronic and magnetic properties of monolayer TiS$_2$ doped with 3$d$ transition metals (TMs) atoms in both octahedral 1T and trigonal prismatic 1H structures using first-principles calculations. In its pristine form, TiS$_2$ is a non-magnetic semiconductor. The bands near the Fermi energy primarily exhibit $d$ orbital characters, and due to the presence of ideal octahedral and trigonal arrangements, they are well separated from other bands with $p$ character. Upon substituting 3$d$-TM atoms in both structures, a variety of electronic and magnetic phases emerge, including magnetic semiconductor, magnetic half-metal, non-magnetic metal, and magnetic metal. Chromium exhibits the largest magnetic moment in both the 1T and 1H structures. The 1T structure shows a slightly higher magnetic moment of 3.419 $μ_B$ compared to the 1H structure 3.138 $μ_B$, attributed to the distorted octahedral structure of the 1T structure. Unlike pristine TiS$_2$, the deficiency in saturation of neighboring S atoms in the presence of impurities leads to the proximity of energy levels of $d$ and $p$ states, resulting in unexpectedly sizable magnetic moments. Another interesting case is Cobalt, which leads to a magnetic moment of approximately 0.805 $μ_B$ in the 1H structure, while the Co exhibits a non-magnetic state in the 1H structure. These materials demonstrate a high degree of tunability and can be optimized for various magnetic applications.
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Submitted 23 March, 2024;
originally announced March 2024.
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Nonconventional screening of Coulomb interaction in two-dimensional semiconductors and metals: A comprehensive cRPA study of MX2 (M=Mo, W, Nb, Ta; X=S, Se, Te)
Authors:
Hamid Reza Ramezani,
Ersoy Sasioglu,
Hanif Hadipour,
Hamid Rahimpour Soleimani,
Christoph Friedrich,
Stefan Blugel,
Ingrid Mertig
Abstract:
Experimental observations of large exciton binding energies and non-hydrogenic Rydberg series in 2D semiconducting TMDs, along with deviations in plasmon dispersion in 2D metallic TMDs, suggest the presence of a nonconventional screening of the Coulomb interaction. The experimentally observed Mott insulating state in the charge density wave (CDW) reconstructed lattice of TMDs containing 4d and 5d…
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Experimental observations of large exciton binding energies and non-hydrogenic Rydberg series in 2D semiconducting TMDs, along with deviations in plasmon dispersion in 2D metallic TMDs, suggest the presence of a nonconventional screening of the Coulomb interaction. The experimentally observed Mott insulating state in the charge density wave (CDW) reconstructed lattice of TMDs containing 4d and 5d elements further confirms the presence of strong Coulomb interactions in these systems. In this study, we use first-principles electronic structure calculations and constrained random-phase approximation to calculate the Coulomb interaction parameters (partially screened U and fully screened W) between localized $d$ electrons in 2D TMDs. We specifically explore materials represented by the formula MX2 (M=Nb, Ta, Mo, W, and X=S, Se, Te) and consider three different phases (1H, 1T, and 1T'). Our results show that the short-range interactions are strongly screened in all three phases, whereas the long-range interactions remain significant even in metallic systems. This nonconventional screening provides a compelling explanation for the deviations observed in the usual hydrogenic Rydberg series and conventional plasmon dispersion in 2D semiconducting and metallic TMDs, respectively. Our calculations yield on-site Coulomb interaction parameters U within the ranges of 0.8-2.5 eV, 0.8-1.9 eV, and 0.9-2.4 eV for the 1H, 1T, and 1T' structures, respectively. Furthermore, our findings indicate a substantially high ratio of on-site effective Coulomb interaction to bandwidth (U_eff/W_b >> 1) in CDW TMDs, providing robust evidence for the experimentally observed strongly correlated Mott phase.
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Submitted 2 February, 2024;
originally announced February 2024.
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Large thermoelectric efficiency of doped polythiophene junction: a density functional study
Authors:
Zahra Golsanamlou,
Meysam Bagheri Tagani,
Hamid Rahimpour Soleimani
Abstract:
The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory combined with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the prese…
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The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory combined with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the presence of dopants can bring the structural changes in the oligomer and modify the arrangement of the molecular levels leading to the dramatic changes in the transmission spectra of the junction. Therefore, the large enhancement in thermopower and consequently figure of merit is obtained by dopants which makes the doped PT junction as a beneficial thermoelectric device.
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Submitted 10 January, 2018;
originally announced January 2018.
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High performance of mixed halide perovskite solar cells: role of halogen atom and plasmonic nanoparticles on the ideal current density of cell
Authors:
Mohammad Ali Mohebpour,
Mohaddeseh Saffari,
Hamid Rahimpour Soleimani,
Meysam Bagheri Tagani
Abstract:
To be able to increase the efficiency of perovskite solar cells which is one of the most substantial challenges ahead in photovoltaic industry, the structural and optical properties of perovskite CH3NH3PbI3-xBrx for values x=1-3 have been studied employing density functional theory (DFT). Using the optical constants extracted from DFT calculations, the amount of light reflectance and ideal current…
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To be able to increase the efficiency of perovskite solar cells which is one of the most substantial challenges ahead in photovoltaic industry, the structural and optical properties of perovskite CH3NH3PbI3-xBrx for values x=1-3 have been studied employing density functional theory (DFT). Using the optical constants extracted from DFT calculations, the amount of light reflectance and ideal current density of a simulated single-junction perovskite solar cell have been investigated. The results of DFT calculations indicate that adding halogen bromide to CH3NH3PbI3 compound causes the relocation of energy bands in band structure which its consequence is increasing the bandgap. In addition, the effect of increasing Br in this structure can be seen as a reduction in lattice constant, refractive index, extinction and absorption coefficient. As well, results of the simulation suggest a significant current density enhancement as much as 22% can be achieved by an optimized array of Platinum nanoparticles that is remarkable. This plan is able to be a prelude for accomplishment of solar cells with higher energy conversion efficiency.
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Submitted 11 September, 2017;
originally announced September 2017.
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DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique
Authors:
Mohaddeseh Saffari,
Mohammad Ali Mohebpour,
Hamid Rahimpour Soleimani,
Meysam Bagheri Tagani
Abstract:
Since perovskite solar cells have attracted a lot of attentions over the past years, the enhancement of their optical absorption and current density are among the basic coming challenges. For this reason, first, we have studied structural and optical properties of organic-inorganic hybrid halide perovskite CH3NH3PbI3 and the compounds doped by chlorine halogen CH3NH3PbI3-xClx in the cubic phase by…
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Since perovskite solar cells have attracted a lot of attentions over the past years, the enhancement of their optical absorption and current density are among the basic coming challenges. For this reason, first, we have studied structural and optical properties of organic-inorganic hybrid halide perovskite CH3NH3PbI3 and the compounds doped by chlorine halogen CH3NH3PbI3-xClx in the cubic phase by using density functional theory (DFT). Then, we investigate the light absorption efficiency and optical current density of the single-junction perovskite solar cell CH3NH3PbI3-xClx for the values (x=0,1,2,3) by utilizing optical constants (n,k) resulted from these calculations. The results suggest that increasing the amount of chlorine in the CH3NH3PbI3-xClx compound leads an increase in bandgap energy, as well as a decrease in lattice constants and optical properties like refractive index and extinction coefficient of the structure. Also, the results obtained by simulation express that by taking advantage of light trapping techniques of SiO2, a remarkable increase of light absorption will be achieved to the magnitude of 83.13%, which is noticeable.
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Submitted 21 April, 2017;
originally announced April 2017.
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Investigation of coupling geometry and dimerization effects on thermoelectric properties of a C60 molecular transistor
Authors:
M. Bagheri Tagani,
Z. Golsanamlou,
S. Izadi,
H. Rahimpour Soleimani
Abstract:
Thermoelectric properties of a C60 molecular transistor are studied using Green function formalism in linear response regime. A tight-binding model is used to investigate the effect of the dimerization and coupling geometry on the electrical conductance, thermopower, and figure of merit. Increase of the connection points between the molecule and electrodes results in decrease of the number of the…
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Thermoelectric properties of a C60 molecular transistor are studied using Green function formalism in linear response regime. A tight-binding model is used to investigate the effect of the dimerization and coupling geometry on the electrical conductance, thermopower, and figure of merit. Increase of the connection points between the molecule and electrodes results in decrease of the number of the peaks of the electrical conductance owing to the interference effects. In addition, oscillation of the thermopower is reduced by increase of the connection points. It is also observed that the kind of carriers participating in the energy transport is dependent on the coupling geometry. Results show that the increase of the connection points leads to the reduction of the figure of merit.
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Submitted 3 July, 2013;
originally announced July 2013.
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Photon-phonon-assisted thermoelectric effects in the molecular devices
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
We consider a single level quantum dot interacting with a phonon mode and weakly coupled to metallic leads which are subjected to a time dependent gate voltage. Electrical conductance, thermopower, and figure of merit are investigated in detail using a Tien-Gordon-type rate equation. In the presence of the microwave field, the electrical conductance exhibits extra peaks whose height is controlled…
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We consider a single level quantum dot interacting with a phonon mode and weakly coupled to metallic leads which are subjected to a time dependent gate voltage. Electrical conductance, thermopower, and figure of merit are investigated in detail using a Tien-Gordon-type rate equation. In the presence of the microwave field, the electrical conductance exhibits extra peaks whose height is controlled by the magnitude of the microwave field. Furthermore, the oscillation of the thermopower increases in the presence of the time-dependent gate voltage or the electron-phonon interaction. Influence of the electron-phonon interaction, microwave field, temperature, and Coulomb interaction on the figure of merit is also studied.
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Submitted 27 October, 2012;
originally announced October 2012.
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Phonon-assisted thermoelectric effects in a two-level molecule
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
Thermoelectric properties of a two-level molecule attached to the metallic electrodes are analyzed using the equation of motion technique within the Green function formalism. Results show that the electrical conductance is strongly dependent on the electron and phonon temperatures and the electron-phonon coupling strength. In addition, it is observed that the thermal conductance peaks in the elect…
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Thermoelectric properties of a two-level molecule attached to the metallic electrodes are analyzed using the equation of motion technique within the Green function formalism. Results show that the electrical conductance is strongly dependent on the electron and phonon temperatures and the electron-phonon coupling strength. In addition, it is observed that the thermal conductance peaks in the electron-hole symmetry points are vanished in the presence of the strong electron-phonon interaction. It is also found that the figure of merit is strongly suppressed in the strong electron-phonon interaction. The violation of the Wiedemann-Franz law is also observed coming from the Coulomb interactions.
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Submitted 11 September, 2012;
originally announced September 2012.
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Influence of spin-flip on the performance of the spin-diode
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
We study spin-dependent transport through a spin diode in the presence of spin-flip by means of reduced density matrix approach. The current polarization and the spin accumulation are computed and influence of spin-flip on the current polarization is also analyzed. Analytical relations for the current polarization and the spin accumulation are obtained as a function of polarization of ferromagneti…
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We study spin-dependent transport through a spin diode in the presence of spin-flip by means of reduced density matrix approach. The current polarization and the spin accumulation are computed and influence of spin-flip on the current polarization is also analyzed. Analytical relations for the current polarization and the spin accumulation are obtained as a function of polarization of ferromagnetic lead and the spin-flip rate. It is observed that the current polarization becomes zero under fast spin-flip and the spin accumulation decreases up to %85 when the time of spin-flip is equal to the tunneling time. It is also observed that the current polarization increases linearly when the dot is singly occupied, whereas its behavior is more complicated when the dot is doubly occupied.
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Submitted 12 June, 2012;
originally announced June 2012.
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Time-Dependent Thermopower Effect in an Interacting Quantum Dot
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
The time-dependent thermopower is analyzed through an interacting quantum dot coupled to a time-dependent gate voltage and under the influence of an external magnetic field using the Keldysh nonequilibrium Green's function formalism. Formal expressions of the electrical and thermal conductances, thermopower, and thermoelectrical figure of merit are obtained. The influence of the magnetic field on…
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The time-dependent thermopower is analyzed through an interacting quantum dot coupled to a time-dependent gate voltage and under the influence of an external magnetic field using the Keldysh nonequilibrium Green's function formalism. Formal expressions of the electrical and thermal conductances, thermopower, and thermoelectrical figure of merit are obtained. The influence of the magnetic field on the displacement current and the heat current is studied. Results show that although applying time-dependent gate voltage results in the enhancement of the Seebeck coefficient, the electron-electron interaction gives rise to a significant reduction in the thermopower. The reason for why applying time dependent gate voltage results in the enhancement of the thermopower is also analyzed.
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Submitted 10 June, 2012;
originally announced June 2012.
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Study of couplings effect on the performance of a spin-current diode: Nonequilibrium Green's function based model
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
In this paper, spin-dependent transport through a spin diode composed of a quantum dot coupled to a normal metal and a ferromagnetic lead is studied. The current polarization and the spin accumulation are analyzed using the equations of motion method within the nonequilibrium Green's function formalism. We present a suitable method for computing Green's function without carrying out any self-consi…
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In this paper, spin-dependent transport through a spin diode composed of a quantum dot coupled to a normal metal and a ferromagnetic lead is studied. The current polarization and the spin accumulation are analyzed using the equations of motion method within the nonequilibrium Green's function formalism. We present a suitable method for computing Green's function without carrying out any self-consistent calculation. The influence of coupling strength and magnetic field on the spin current is studied and observed that this device cannot work as a spin diode under certain conditions.
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Submitted 26 April, 2012;
originally announced April 2012.
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Thermoelectric effects in a double quantum dot system weakly coupled to ferromagnetic leads
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
Thermoelectric effects through a serial double quantum dot system weakly coupled to ferromagnetic leads are analyzed. Formal expressions of electrical conductance, thermal conductance, and thermal coefficient are obtained by means of Hubbard operators. The results show that although the thermopower is independent of the polarization of the leads, the figure of merit is reduced by an increase of po…
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Thermoelectric effects through a serial double quantum dot system weakly coupled to ferromagnetic leads are analyzed. Formal expressions of electrical conductance, thermal conductance, and thermal coefficient are obtained by means of Hubbard operators. The results show that although the thermopower is independent of the polarization of the leads, the figure of merit is reduced by an increase of polarization. The influences of temperature and interdot tunneling on the figure of merit are also investigated, and it is observed that increase of the interdot tunneling strength results in reduction of the figure of merit. The effect of temperature on the thermal conductance is also analyzed.
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Submitted 17 April, 2012;
originally announced April 2012.
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Phonon-assisted tunneling through a double quantum dot system
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
Electron transport through a double quantum dot system is studied with taking into account electron-phonon interaction. The Keldysh nonequilibrium Green function formalism is used to compute the current and transmission coefficient of the system. The influence of the electron-phonon interaction, interdot tunneling, and temperature on the density of states and current is analyzed. Results show that…
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Electron transport through a double quantum dot system is studied with taking into account electron-phonon interaction. The Keldysh nonequilibrium Green function formalism is used to compute the current and transmission coefficient of the system. The influence of the electron-phonon interaction, interdot tunneling, and temperature on the density of states and current is analyzed. Results show that although the electron-phonon interaction results in the appearance of side peaks in the conductance at low temperatures, they are disappeared in high temperatures.
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Submitted 10 April, 2012;
originally announced April 2012.
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Spin-current rectification through a quantum dot using temperature bias
Authors:
M. Bagheri Tagani,
H. Rahimpour Soleimani
Abstract:
We analyze spin-dependent transport through a spin-diode in the presence of spin-flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix. Results show that the spin accumulation is linearly increased when the metallic electrode is warmer whereas, its behavior is more complicated when the ferromag…
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We analyze spin-dependent transport through a spin-diode in the presence of spin-flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix. Results show that the spin accumulation is linearly increased when the metallic electrode is warmer whereas, its behavior is more complicated when the ferromagnetic lead is warmer. Furthermore, spin-flip causes that the current polarization becomes not only a function of spin-flip rate but also a function of temperature. The current polarization is reduced up to 90% if the time of spin-flip is equal to the tunneling time. The behavior of spin-dependent current is also studied as a function of temperature, spin-flip rate, and polarization.
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Submitted 8 April, 2012;
originally announced April 2012.
